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Vlsi Assignment

The document compares NMOS and PMOS transistors, highlighting differences in their conduction types, power consumption, and layout requirements. It discusses the operational characteristics of NMOS and PMOS, including their strengths and area requirements. Additionally, it provides equations related to transistor operation and mentions the structure of a 2-input NAND gate using NMOS technology.

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bhaskarzyotee1234
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40 views7 pages

Vlsi Assignment

The document compares NMOS and PMOS transistors, highlighting differences in their conduction types, power consumption, and layout requirements. It discusses the operational characteristics of NMOS and PMOS, including their strengths and area requirements. Additionally, it provides equations related to transistor operation and mentions the structure of a 2-input NAND gate using NMOS technology.

Uploaded by

bhaskarzyotee1234
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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A,Write Ra dfeno nces baween NHOS amd Pmos:

arametoas NMOS PMOS


|> Canelen ygle Eloctnon (Guten moshj) Holes (sloucere Mobiy
Suddhang
Spoct
Pasten due o higlen Sowe Rarg NMOS,
Conneier mobilhy
W>ON Stae Tueny oN wRen gate
Condhon Tns oN wten gaevolage

Used For
Tghicay wed npul
down nehionky metwonky
y Area Raquitom Roquinos loy con Koquire mone alcon
area o achiene a e
dnne
Cosumees Powen Aloo Consunmes powen
Conunphon
hen oN wRen oN, butlo wen
Suikhdng mpacts
dynane powen
v)Dre
Stnengt Strongen (adten- unnon Waoalkan (needs lenger
drine pen wnt anea), anea to mateh NMOS die)
vi> Layout
Coidonabon Mona Comprch, Roquineyone aneakonhe
louen tRm
volage PMOS. NMOC

Poen CMOS. Ach as a Re fastutebig ompletnt wMOS ho orny


Complee CMOS logec,
4. Wrdte tRe eupronlon for Non to- ahunaled oyon and
Sahunazd reoqiom ?
Anauon
iesty. Tke whole comcepto tRo Mos tramsstor eves ron
Ro uwe oa volaq on the gabeto mduee achange uatho chaml
botween ounce amdram, which may tRen be cawsed to me
Jounce to dran wndon tR muenee o} an elechnicalel
Cheated t-mone treom by volta Vas appled botuwen dnabn

fo Sounce volage Vgg Rom Ids és dapondont on botA Vs amdVhc


Coms: don a structung, as un tRe yiven igre belo ncutdch
elecons ul Doweeeo drage dram.
Change wduced chamel (o)
Elocon tnans ime (t)
Pngt,tna,Athme
Longtk o chamel
Valocihy )

Gale
Saune
Drein

Hguna NMos teamsstor ShLuctne


but volhy
V= uEds
Lhene,
K= eluctnon on holk mobildy (aun facka
Eds= elecc fold (dnaa tosoune)
Nou,
Ed, =

V=
L

The Nom Saturated Region


Change nduced mchameh due to ga volage és dueto tRe

Bulostaate Conns ched to kounca), Now note Rat fRe volage along f
chamnel Nanies Uneanly wilk distame x nom tRe ource due

sohnated tRon Re ahenage value ib Vds/e


Váslz .FunfRornona ,the
ta
and etaait Ra
chamnel
Nohe

whone, gate to chamal


Eg2 auenage clachie eld
Cin =rolaine pon mitinihy o ation behwaen gah ond chamnel

Now

tshone D= Ode fickay.

WLEns o

Nouw
we ge

wvEms E(Vgs- V).e2

Or

lm fhe nn sanaed on logne (lagion


kone
Vas< Vgs- anmd ke D
tb Comnon pnachse to wnite,

2
which an alteanae on cquohon iy,
Noimg tRat got folannel capoetlauc,
(paralat plae)> Ca =k wL

Comvenient to use qabe capacinee pon nt anea Co (uhich

expnesons, Nafeng Rot

Cam wnihe

The Sahaled Rogomt

IR dnop mthe chamal equals Re aloch ve gale b chamne


voge a Re dram Gmd we may assume tRat IRacuen
ainly confant os Vas mereaves Gthon.Thus
Tds = kW (V)

On ce Con e,

2 (Vg-v)

We abo may uee


2L

enhamemat
This eupna)lon, doied fon ld, hold on bah
moda olenices,bt thod bemold at ta
on he no NMoS doploho modo douce
tRread valtoge
(denorad asVsnegahve.
2.Drcouo R hck diagnca or NAND gat.
Aronarnt

Vop

DevancakHon
A
2

GND Vss
Ag NMOs kcMos 2-input NAND gales
Pi

t:2

1:2 142

GND
A A
A
fig- She Digrams (parby aena naore

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