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Experiment 8

The document outlines an experiment to draw the I-V characteristic curve for a p-n junction diode under forward and reverse bias conditions. It includes the necessary apparatus, theoretical background on how forward and reverse biasing affects the diode, observations, results, precautions, and potential sources of error. The experiment aims to demonstrate the behavior of the diode and obtain its characteristic curves.

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Vedika Dalmia
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10 views4 pages

Experiment 8

The document outlines an experiment to draw the I-V characteristic curve for a p-n junction diode under forward and reverse bias conditions. It includes the necessary apparatus, theoretical background on how forward and reverse biasing affects the diode, observations, results, precautions, and potential sources of error. The experiment aims to demonstrate the behavior of the diode and obtain its characteristic curves.

Uploaded by

Vedika Dalmia
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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EXPERIMENT NO.

AIM: To draw the I-V characteristic curve for a p-n junction diode in forward and reverse
bias.

APPARATUS AND MATERIAL REQUIRED:


 A p-n junction diode (OA-79  Voltmeter
Or 1N4007)  A microammeter
 A resistor  Connecting wires
 Battery eliminator  Sand paper
 A millimetre  A one-way key

THEORY:

When one side of an intrinsic semiconductor is doped with acceptor i.e, one side is made p-
type by doping with n-type material, a p-n junction diode is formed. This is a two terminal
device.

Forward Biased P-N Junction :


When we connect p-type region of a junction with the positive terminal of a voltage source
and n-type region with the negative terminal of the voltage source, then the junction is said
to be forward biased.
In forward biasing ,the applied voltage V opposes the barrier voltage VB .
 The effective barrier potential decreases.
 The majority charge carriers i.e holes from p-side and electrons from n-side begin to
flow towards the junction.
 The diffusion of holes and electrons into the depletion layer decreases its width.
 The effective resistance across the p-n junction decreases.

Reverse Biased P-N Junction


When positive terminal of a voltage source is connected to the n-type region and the
negative terminal of the source is connected to the p-type region then the p n junction is
said to be in reverse biased condition.
In reverse biasing ,the applied voltage V and the barrier voltage VB are in same direction.
 The effective barrier potential increases.
 The majority charge carriers i.e holes from p-side and electrons from n-side begin to
flow away from the junction.
 It increases the width of the depletion layer .
 The effective resistance across the p-n junction increases.
OBSERVATIONS:
1. p-n junction diode used (diode no.) = 1N4007
2. For forward biasing
(i) Range of the voltmeter = 0 V to 3 V
(ii) Least count of the voltmeter scale = 0.02 V
(iii) Range of the milliammeter = 0 mA to 200 mA
(iv) Least count of the milliammeter scale = 0.2 mA
3. For reverse biasing
(i) Range of the voltmeter = 0 V to 3 V
(ii) Least count of the voltmeter scale = 0.02 V
(iii) Range of the microammeter = 0 μA to 200 μA
(iv) Least count the microammeter = 2 μA
RESULTS:
The obtained curves are the characteristics curves of the semi-conductor diode.

PRECAUTIONS:
1. The connections should be neat, clean & tight .
2. Insert the key only while taking observations.
3. Voltmeter milliammeter and microammeter should be of proper range.
4. Do not exceed the maximum current and maximum voltage specified for the given
diode.
5. Find out manufacturer’s specification for maximum permissible voltage and current.

SOURCES OF ERROR:

1. The connections may be loose.


2. The junction diode supplied maybe faulty.
3. Application of forward voltage beyond tolerance limit of the diode.

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