AIM OF THE EXPERIMENT:
Study of VI characteristics of PN junction diode and calculation of DC and AC resistances.
APPARATUS REQUIRED:
Sl.
Name of the
N Specification Quantity
Apparatus
o.
1 Diode IN4007 1
2 Potentiometer 1KΩ 1
3 Resistor 1KΩ 1
DC
4 Power supply 1
-12v to +12v
5 Multimeter Digital 1
6 Wire -- As per required
7 Breadboard - 1
THEORY:
Donor impurities (pentavalent) are introduced into one-side and acceptor impurities into the
other side of a single crystal of an intrinsic semiconductor to form a p-n diode with a
junction called depletion region (this region is depleted off the charge carriers). This
region gives rise to a potential barrier Vγ called Cut- in Voltage. This is the voltage
across the diode at which it starts conducting. The P-N junction can conduct beyond this
Potential.
The P-N junction supports unidirectional current flow. If +ve terminal of the input supply is
connected to anode (P-side) and –ve terminal of the input supply is connected to
cathode (N- side), then diode is said to be forward biased. In this condition the height of
the potential barrier at the junction is lowered by an amount equal to given forward
biasing voltage. Both the holes from p-side and electrons from n-side cross the junction
simultaneously and constitute a forward current ( injected minority current – due to holes
crossing the junction and entering N-side of the diode, due to electrons crossing the
junction and entering P-side of the diode). Assuming current flowing through the diode to
be very large, the diode can be approximated as short-circuited switch. If –ve terminal of
the input supply is connected to anode (p-side) and +ve terminal of the input supply is
connected to cathode (n-side) then the diode is said to be reverse biased. In this
condition an amount equal to reverse biasing voltage increases the height of the
potential barrier at the junction. Both the holes on p-side and electrons on n-side tend to
move away from the junction thereby increasing the depleted region. However the
process cannot continue indefinitely, thus a small current called reverse saturation
current continues to flow in the diode. This small current is due to thermally generated
carriers. Assuming current flowing through the diode to be negligible, the diode can be
approximated as an open circuited switch.
The volt-ampere characteristics of a diode explained by following equation:
I = Io(Exp(Vd/ ηVi) - 1)
Where I = current flowing in the diode
Io=reverse saturation current
V=voltage applied to the diode
VT=volt-equivalent of temperature=KT/q=T/11,600=26mV(@ room temp).
η=1 (for Ge) and 2 (for Si)
It is observed that Ge diode has smaller cut-in-voltage when compared to Si diode. The
reverse saturation current in Ge diode is larger in magnitude when compared to silicon
diode.
VI Characteristics Of
Volt-ampere
Diode (V-I) characteristics of a
pn junction or semiconductor diode
is the curve between voltage across
the junction ad the current through
the
Thecircuit.
characteristics
an be explained
Normally
under threethe voltage
cases . is taken along
the x-axis and the current along y-
axis. Zero Bias
Forward Bias
Reverse Bias
CASE-1 (Zero Bias)
In Zero Bias
condition, No
external voltage
is applied to the
pn junction.
Hence the
potential barrier
at the junction
does not permit
current flow.
Therefore , the
circuit current is
Zero at V=0 v.
CASE-2 (Forward Bias)
In Forward Bias condition,p-type of
the pn junction is connected to the
+ve terminal and n-type is
connected to –ve terminal.
This results to a reduced barrier
potential.
Once theOpen circuit PNvoltage
P external -junctionN
exceeds
-
the potential barrier- + +
- - ++ voltage,
+ the pn
junction behaves- - as + an oridinary
- - + +
conductor. Space charge region
P N
- +
- +
- +
- +
Forward bias
VF
CASE- 3(Reverse Bias)
In Reverse Bias condition , p-type of
the pn junction is connected to the -
ve terminal and n-type is connected
to +ve terminal.
This results in a increased barrier
potential at the junction.
Hence the junction resistance
becomes very high and as a result
practically no current flows through
the circuits
However, a very small current of the
order of μA, flows through the circuit
in practice.
This is knows as reverse saturation
current (IS) and it is due to the
minority carriers in the junction.
POpen circuit PN -junction N
- - + +
- - + +
- - + +
- - + +
Space charge region
P N
- - - + + +
- - - + + +
- - - + + +
- - - + + +
Reverse bias
VR
VI Characteristics Of Diode
Forward Resistance
The resistance offered by the diode
in the forward bias condition is
known as forward resistance. This
resistance is of two types, they are,
D.C forward resistance
A.C forward resistance
D.C. Forward Resistance:
It is measured by
the ratio of dc
voltage across the
diode to the
resulting dc current
through it. Thus
referring to the
forward
characteristics in fig.
It is clear that
whenA.C. Forward forward
Resistance:
It is
voltage measured
is OA, the by the ratio of
change current
forward in voltage is across diode
toForward
OB.
AC the resulting
Resistance = change
Change in voltage across diode in
Corresponding change in current through diode
current
So, DC Forward through.
So,
Resistance,
Rf = OA/OB.
A.C. Forward
TheResistance:
ac forward
resistance can be
determined from the
forward
characteristics as
shown in fig. If P is
CIRCUIT DIAGRAM:
the operating point
at any instant, then
forward voltage is
OA and forward
current is OB. To
find the ac forward
resistance, vary the
forward voltage on
Forward Bias
both sides of the
OP.
Hence,
AC forward
resistance = OC-
OE
Reverse Bias
PROCEDURE:
Forward Biased Condition:
1. Connect the PN Junction diode in forward bias i.e Anode is connected to positive of the
power supply and cathode is connected to negative of the power supply.
2. Use a Regulated power supply of range (0-12)V through a potentiometer of 1KΩ and a
series resistance of 1KΏ.
3. For various values of forward voltage (VD) note down the corresponding values of
forward current (ID).
Reverse Biased Condition:
1. Connect the PN Junction diode in Reverse bias i.e; anode is connected to negative
of the power supply and cathode is connected to positive of the power supply.
2. For various values of reverse voltage (VD) note down the corresponding values of
reverse current (ID).
PRECAUTIONS:
1. While doing the experiment do not exceed the ratings of the diode. This may lead to
damage of the diode.
2. Connect multimeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections
as per the circuit diagram.
OBSERVATION:
RL=?
Reading for Forward Bias Condition:
Sl. VD (V) VRL (V)
No
. (mA
)
1
2
3
4
5
6
7
8
9
10
11
12
13
Reading for Reverse Bias Condition:
Sl.
No VD(V) VRL(mV)
(µA
.
)
1
2
3
4
5
6
7
8
9
10
RESULT:
Thus the VI characteristics of PN junction diode is verified
DC forward resistance = ………. Ω
AC forward resistance = ………. Ω
CONCLUSION:
*****Write in your own language what you learn from this experiment. *****
