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Experiment No.
P-N Junction Diode
Objective: To draw the (V-I) characteristics of p-n junction diode and to estimate the dynamic and
static resistance.
Apparatus Required: Diode trainer kit, Power supply, voltmeter, ammeter and connecting wires etc.
Theory and Formula Used: An equation describes the exact current through a diode, given the
voltage dropped across the junction, the temperature of the junction, and several physical constants. It
is commonly known as the diode equation:
ID = Is {exp. (eVD/kBT) -1},
where ID is diode current in amps and Isis total saturation current in amps.
VD = Voltage applied across diode in Volts, It is positive for forward bias and negative for reverse
bias.
kB = Boltzmann's constant (1.38 х10-33)
T = Junction temperature in Kelvin
Suppose a forward bias is applied such that
exp. (eVD/kBT) 1, then
ID = Is exp(eVD/kBT)
This shows that in forward bias, current increases exponentially as shown (V-I) graph in figure 3.
When a reverse bias is applied such that
exp. (-eVD/kBT) 1, then
ID = -Is
Which shows that in reverse bias current remains constant at Is as shown (V-I) graph in figure-3.
Figure 1. A P-N junction diode
When the polarity of the battery is such that electrons are allowed to flow through the diode, the diode
is said to be forward-biased. Conversely, when the battery is “backward” and the diode blocks the
current, the diode is said to be reverse-biased. A diode may be thought of as like a switch: “closed”
when forward-biased and “open” when reverse-biased.
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Circuit Diagram: The circuit diagram is as shown below in Figure 3a and b.
(A) For forward bias:
Figure 3a
(B) Reverse Bias
Figure 3b
Procedure:
(A) Forward Bias:
1. Before switching on the supply rotate the potentiometer P1 fully in CCW (counter clockwise
direction).
2. Connect the ammeter between TP4 and TP10 to measure the diode current ID (mA) and set the
ammeter to 200 mA range.
3. Connect the voltmeter across TP3 and TP11 to measure the diode voltage V D and set the voltmeter
to 2 V range.
4. Switch on the power supply.
5. Vary the potentiometer P1 so as to increase the value of diode voltage V D from 0 to 1V (0.83V) in
steps and measure the corresponding values of diode current ID in mA and note down in the
Observation Table- 1. From 0.5 V to 0.7 V, take readings in steps of 0.02 V.
6. Plot a curve between diode voltage VD and diode current ID as shown in Figure 4 (First quadrant)
using suitable scale, with the help of Observation Table- 1. This curve is the required forward
characteristics of Si diode.
7. Switch off the supply.
(B) Reverse Bias:
1. Before switching on the supply rotate potentiometer P1 fully in CCW (counter clockwise
direction).
2. Connect the ammeter between TP5 and TP10 to measure the diode current ID (µA) & and set the
ammeter to 20µA range.
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3. Connect the voltmeter across TP3 and TP11 to measure the diode voltage V D and set the voltmeter
to 20V range.
4. Switch on the power supply.
5. Vary the potentiometer P1 so as to increase the value of the diode voltage V D from 0 to 7 V in steps
of 0.5 V . Measure the corresponding values of diode current ID in µA and note down in the
Observation Table- 2.
6. Plot a curve between diode voltage VD and diode current ID as shown in Figure 4 (third quadrant)
using suitable scale with the help of Observation Table -2. This curve is the required reverse
characteristics of the Ge diode.
7. Switch off the supply.
Observation Tables:
(A) Forwad Bias (Table-1) (B) Reverse Bias(Table-2)
S. no. Diode Voltage Diode current ID S. no. Diode Voltage Diode current ID
(VD) (mA) (VD) (µA)
1 1
2 2
3 3
4 4
5 5
6 6
7 7
8 8
9 9
10 10
11 11
12 12
Calculations:
1. Plot a graph between V and I.
2. Find the static and dynamic resistance :
Static Resistance: RD=VD/ID ohms
Dynamic Resistance: rD= ΔVD/ΔID ohms
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Figure 4. (V-I) Characteristics of p-n junction diode
Result: The IV characteristics of the diode are shown in the forward and reverse bias. The static and
dynamic resistance are Ohms and Ohms.
Precautions and Sources of Error:
1. Make sure that all the connections are tight.
2. The voltage should not exceed the specified breakdown voltage in the reverse bias.
3. The voltage should be increased gradually in small steps.
