p-n Junction Characteristics
Name of Experiment: TO STUDY THE CHARACTERISTICS OF A P-N JUNCTION DIODE AND
TO CALCULATE ITS DYNAMIC RESISTANCE
Theory: When a slice of p-type semiconductor material is intimately joined with another slice of n-
type; it forms a p-n junction diode. Around the junction there is a region, called depletion region,
where there are neither holes nor conduction electrons. If an external battery is connected across the
junction the diode is biased. The type of biasing is called forward biasing (see Fig. 1) if the positive
terminal of the battery is connected to p-end and the negative to n-end. In forward biased condition,
both electrons and holes are pumped toward the junction due to the forces of repulsion on them. As
a result, the depletion layer becomes shorten and current flows easily through the junction after a
certain voltage (known as the knee voltage). On the other hand, the type of biasing is called reverse
biasing (see Fig. 2) if the negative terminal of the battery is connected to the p-end and positive to the
n-end. In this case, both electrons and holes are attracted toward the ends. The depletion layer widens
and virtually no current will flow in the circuit due to majority charge carriers (holes in p-region and
electrons in n-region). However, the flow of minority charge carriers (electrons in p-region and holes
in n-region) across the junction will constitute a small current, known as reverse saturation current or
surface leakage current.
The variation of current with biasing voltage gives a curve known as characteristic of the p-n junction
diode [Fig.3]. As the current through the device varies above and below some average value of the
current, the dynamic or incremental resistance rp is used instead of static resistance. The dynamic
resistance of a diode is defined as the reciprocal of the slope of the characteristic curve, i.e.
1 V .
rP
(I V ) I
Apparatus: A PN junction diode, a battery, potentiometer, voltmeter, milli-ammeter, micro-ammeter,
connecting wires, etc.
Experimental Set-up
mA µA
V V
E RL E
RL
Fig.1 Forward bias connection
Fig.2 Reverse bias connection of a
of a p-n junction diode.
p-n junction diode.
Fig.3 Characteristic curve of a p-n junction diode.
1
p-n Junction Characteristics
Procedure:
1. Prepare the circuit as shown in Fig.1.
2. Using the regulated power supply apply the voltage as 0 volt. Record the current, if any.
3. Increase the supply voltage in step of 0.1 volt and note the corresponding current each time.
4. Now prepare the circuit as shown in Fig. 2.
5. Vary the supplied voltage in step of 2 volt and note the corresponding current each time.
6. Draw a graph between the supplied voltage and the measured current both for forward and
reverse biased conditions.
Experimental Data
Table: Data for the I-V curve.
No. Forward bias Reverse bias
of Supplied Voltage Current Supplied Voltage Current
Obs. (volt) (mA) (volt) (μA)
1. 0.0 … 0.0 …
2. 0.1 … 2.0 …
3. 0.2 … 4.0 …
4. 0.3 … 6.0 …
5. 0.4 … 8.0 …
6. 0.5 … 10.0 …
7. 0.6 … 12.0 …
8. 0.7 … 14.0 …
9. 0.8 … 16.0 …
Results: (1) The characteristic curve of the given p-n junction diode was shown in I~V graph.
(2) Dynamic resistance, 𝑟𝑝 = …………. Ω at ……… volt.
Calculation:
From the characteristic curve, ΔI = ......... mA and ΔV = ......... volts.
Therefore, the dynamic resistance, rP V ......... .
I
Precaution:
(1) In case of forward bias, the maximum supplied voltage must not exceed 1.0 volt.
Discussion:
1) During forward bias connection, p-n junction diode behaves as insulator first (up to 0.2V for
Ge and 0.6V for Si), after that it conducts current.
(2) At constant temperature, the current is found to be increased slightly with the increase of input
voltage. This small current is due to impurities on the surface of the semiconductor that
behaves as a resistor and obeys Ohm’s law. This current is called the surface leakage current.
