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8550S

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HaiBui
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8550S

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HaiBui

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8550S

8550S TRANSISTOR (PNP) TO-92

FEATURE 1. EMITTER

Excellent hFE linearity


2. COLLECTOR

3. BASE

1 2 3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol Parameter Value Units


VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Dissipation 625 mW
TJ Junction Temperature 150 ℃
Tstg Junction and Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= -100uA, IE=0 -40 V

Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V

Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 uA

Collector cut-off current ICEO VCE= -20V,IB=0 -0.1 uA

Emitter cut-off current IEBO VEB= - 3V, IC=0 -0.1 uA

hFE(1) VCE= -1V, IC= -50mA 85 400


DC current gain
hFE(2) VCE= -1V, IC= -500mA 50

Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.6 V

Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -1.2 V


VCE=- 6V, IC=-20mA
Transition frequency fT 150 MHz
f =30MHz

CLASSIFICATION OF hFE(1)
Rank B C D D3

Range 85-160 120-200 160-300 300-400


Typical Characteristics 8550S

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