This document provides specifications for the KTA1046 epitaxial planar PNP transistor. It is intended for general purpose industrial applications and is complementary to the KTC2026 transistor. Key specifications include a maximum collector saturation voltage of -1.0V, DC current gains of 100-300 at -0.5A collector current and 20 or more at -3A, and transition frequency of 30MHz or more. Maximum ratings include collector-emitter voltage of -60V and collector current of -3A.
This document provides specifications for the KTA1046 epitaxial planar PNP transistor. It is intended for general purpose industrial applications and is complementary to the KTC2026 transistor. Key specifications include a maximum collector saturation voltage of -1.0V, DC current gains of 100-300 at -0.5A collector current and 20 or more at -3A, and transition frequency of 30MHz or more. Maximum ratings include collector-emitter voltage of -60V and collector current of -3A.
This document provides specifications for the KTA1046 epitaxial planar PNP transistor. It is intended for general purpose industrial applications and is complementary to the KTC2026 transistor. Key specifications include a maximum collector saturation voltage of -1.0V, DC current gains of 100-300 at -0.5A collector current and 20 or more at -3A, and transition frequency of 30MHz or more. Maximum ratings include collector-emitter voltage of -60V and collector current of -3A.
This document provides specifications for the KTA1046 epitaxial planar PNP transistor. It is intended for general purpose industrial applications and is complementary to the KTC2026 transistor. Key specifications include a maximum collector saturation voltage of -1.0V, DC current gains of 100-300 at -0.5A collector current and 20 or more at -3A, and transition frequency of 30MHz or more. Maximum ratings include collector-emitter voltage of -60V and collector current of -3A.
FEATURES ・Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. ・Complementary to KTC2026.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -7 V Collector Current IC -3 A Base Current IB -0.5 A
Collector Power Ta=25℃ 2
PC W Dissipation Tc=25℃ 20 Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-60V, IE=0 - - -1 μA Emitter Cut-off Current IEBO VEB=-7V, IC=0 - - -1 μA Collector-Emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 -60 - - V hFE(1) (Note) VCE=-5V, IC=-0.5A 100 - 300 DC Current Gain hFE(2) VCE=-5V, IC=-3A 20 - - Collector Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-0.2A - -0.25 -1.0 V Base-Emitter Voltage VBE VCE=-5V, IC=-0.5A - -0.7 -1.0 V Transition Frequency fT VCE=-5V, IC=-0.5A - 30 - MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 45 - pF
Summary of IEEE Standard 1459 - Definitions For The Measurement of Electric Power Quantities Under Sinusoidal, Nonsinusoidal, Balanced or Unbalanced Conditions
