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Isc 2SB553: Silicon PNP Power Transistor

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This document provides product specifications for the INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB553. It has a low collector saturation voltage of -0.4V max at 4A collector current. It is intended for high current switching and power amplifier applications. The document lists maximum ratings, electrical characteristics, and switching times parameters.

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Isc 2SB553: Silicon PNP Power Transistor

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25 views2 pages
This document provides product specifications for the INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB553. It has a low collector saturation voltage of -0.4V max at 4A collector current. It is intended for high current switching and power amplifier applications. The document lists maximum ratings, electrical characteristics, and switching times parameters.

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2SB553

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This document provides product specifications for the INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB553. It has a low collector saturation voltage of -0.4V max at 4A collector current. It is intended for high current switching and power amplifier applications. The document lists maximum ratings, electrical characteristics, and switching times parameters.

Copyright:

© All Rights Reserved
Download as PDF, TXT or read online from Scribd
Download as pdf or txt
25 views2 pages

Isc 2SB553: Silicon PNP Power Transistor

Uploaded by

Newsr Print
This document provides product specifications for the INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB553. It has a low collector saturation voltage of -0.4V max at 4A collector current. It is intended for high current switching and power amplifier applications. The document lists maximum ratings, electrical characteristics, and switching times parameters.

Copyright:

© All Rights Reserved
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INCHANGE Semiconductor Product Specification

isc Silicon PNP Power Transistor 2SB553

DESCRIPTION
·Low Collector Saturation Voltage
:VCE(sat)= -0.4(V)(Max)@IC= -4A
·Complement to Type 2SD553

APPLICATIONS
·High current switching applications.
·Power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage -70 V

VCEO Collector-Emitter Voltage -50 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current-Continuous -7 A

Total Power Dissipation


1.5
@ Ta=25℃
PC W
Total Power Dissipation
40
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website：www.iscsemi.cn 1
INCHANGE Semiconductor Product Specification

isc Silicon PNP Power Transistor 2SB553

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -50 V

VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -0.4 V

VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.2 V

ICBO Collector Cutoff Current VCB= -70V ; IE= 0 -30 μA

IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -50 μA

hFE-1 DC Current Gain IC= -1A ; VCE= -1V 70 240

hFE-2 DC Current Gain IC= -4A ; VCE= -1V 30

fT Current-Gain—Bandwidth Product IC= -1A ; VCE= -4V 10 MHz

COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 250 pF

Switching Times

ton Turn-on Time 0.2 μs

RL= 10Ω, IB1= -IB2= -0.15A,


tstg Storage Time 2.5 μs
VCC≈ -30V

tf Fall Time 0.5 μs

 hFE-1 Classifications

O Y

70-140 120-240

isc website：www.iscsemi.cn 2

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