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APPLICATION: Low Frequency Power Amplifier Applications.: - PNP Silicon

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Jesus Alfonzo

This document provides specifications for the B631K PNP silicon transistor. It can be used in low frequency power amplifier applications. The maximum ratings include a collector-base voltage of -120V, collector-emitter voltage of -120V, and collector current of -1A. The electrical characteristics include a common emitter current gain of 60-320, collector cut-off current below -1uA, and gain bandwidth product of 50-110MHz.

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APPLICATION: Low Frequency Power Amplifier Applications.: - PNP Silicon

Uploaded by

Jesus Alfonzo
94 views1 page
This document provides specifications for the B631K PNP silicon transistor. It can be used in low frequency power amplifier applications. The maximum ratings include a collector-base voltage of -120V, collector-emitter voltage of -120V, and collector current of -1A. The electrical characteristics include a common emitter current gain of 60-320, collector cut-off current below -1uA, and gain bandwidth product of 50-110MHz.

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b631k

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This document provides specifications for the B631K PNP silicon transistor. It can be used in low frequency power amplifier applications. The maximum ratings include a collector-base voltage of -120V, collector-emitter voltage of -120V, and collector current of -1A. The electrical characteristics include a common emitter current gain of 60-320, collector cut-off current below -1uA, and gain bandwidth product of 50-110MHz.

Copyright:

© All Rights Reserved
Download as PDF, TXT or read online from Scribd
Download as pdf or txt
94 views1 page

APPLICATION: Low Frequency Power Amplifier Applications.: - PNP Silicon

Uploaded by

Jesus Alfonzo
This document provides specifications for the B631K PNP silicon transistor. It can be used in low frequency power amplifier applications. The maximum ratings include a collector-base voltage of -120V, collector-emitter voltage of -120V, and collector current of -1A. The electrical characteristics include a common emitter current gain of 60-320, collector cut-off current below -1uA, and gain bandwidth product of 50-110MHz.

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风光欣技术资料 B631K

—PNP silicon —
■■APPLICATION: Low Frequency Power Amplifier Applications.

■■MAXIMUM RATINGS（Ta＝25℃）
PARAMETER SYMBOL RATING UNIT

Collector-base voltage VCBO -120 V


Collector-emitter voltage VCEO -120 V
Emitter-base voltage VEBO -5 V 1 TO-126
1. Emitter 2.Collector 3.Base
Collector current IC -1 A
Power Dissipation(Ta=25℃) PC 1 W
Power Dissipation(Tc=25℃) PC 8 W
Junction Temperature TJ 150 ℃
Storage Temperature Range Tstg -55~150 ℃

■■ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION

hFE1 60 320 VCE= -5V，IC= -50mA


Common Emitter DC Current Gain
hFE2 20 VCE= -5V，IC= -500mA
Collector Cut-off Current ICBO -1 μA VCB= -50V，IE=0
Emitter Cut-off Current IEBO -1 μA VEB= -4V，IC=0
Collector-Base Breakdown Voltage BVCBO -120 V IC= -0.01mA，IE=0
Collector-Emitter Breakdown Voltage BVCEO -120 V IC= -1mA，IB=0
Emitter-Base Breakdown Voltage BVEBO -5 V IE= -0.01mA，IC=0
Collector-Emitter Saturation Voltage VCE(sat) -0.15 -0.4 V IC= -500mA，IB= -50mA
Base-Emitter Saturation Voltage VBE(sat) -0.85 -1.2 V IC= -500mA，IB= -50mA
Gain bandwidth product fT 50 110 MHz IC= -50mA，VCE= -10V
Output Capacitance Cob 30 pF VCB= -10V, IE=0, f = 1MHz
Turn-on Time tf 80 ns
VCE= -12V,PW=20μs
Turn-off Time toff 100 ns
IC=10IB1=-10IB2=-500 mA
Storage Time tstg 600 ns

■■hFE Classification And Marking


Classification D E F
hFE1 60~120 100~200 160~320

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