2SC5855

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE

2SC5855
HORIZONTAL DEFLECTION OUTPUT FOR
SUPER HIGH RESOLUTION Unit: mm

DISPLAY, COLOR TV, DIGITAL TV

HIGH SPEED SWITCHING APPLICATIONS

High Voltage : VCBO = 1500 V

Low Saturation Voltage : VCE (sat) = 3 V (max)
High Speed : tf(2) = 0.1 µs (typ.)

MAXIMUM RATINGS (Tc = 25°C)

CHARACTERISTIC SYMBOL RATING UNIT

Collector−Base Voltage VCBO 1500 V

Collector−Emitter Voltage VCEO 700 V
Emitter−Base Voltage VEBO 5 V
DC IC 10
Collector Current A
Pulse ICP 20 JEDEC ―
Base Current IB 5 A JEITA ―
Collector Power Dissipation PC 50 W TOSHIBA 2-16E3A
Junction Temperature Tj 150 °C
Weight: 5.5 g (typ.)
Storage Temperature Range Tstg −55~150 °C

ELECTRICAL CHARACTERISTICS (Tc = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT

Collector Cut−off Current ICBO VCB = 1500 V, IE = 0 ― ― 1 mA

Emitter Cut−off Current IEBO VEB = 5 V, IC = 0 ― ― 100 µA
Collector − Emitter Breakdown Voltage V (BR) CEO IC = 10 mA, IB = 0 700 ― ― V
hFE (1) VCE = 5 V, IC = 1 A 28 ― 60
DC Current Gain hFE (2) VCE = 5 V, IC = 6 A 6.2 ― 10 ―

hFE (3) VCE = 5 V, IC = 8 A 4.3 ― 6.7

Collector−Emitter Saturation Voltage VCE (sat) IC = 8 A, IB = 2 A ― ― 3 V
Base−Emitter Saturation Voltage VBE (sat) IC = 8 A, IB = 2 A ― 1.0 1.4 V
Transition Frequency fT VCE = 10 V, IC = 0.1 A ― 2 ― MHz
Collector Output Capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 120 ― pF
Storage Time tstg(1) ― 2.8 ―
ICP = 6 , IB1 (end) = 0.8 A
µs
Fall Time tf(1) fH = 32 kHz ― 0.2 ―
Switching Time
Storage Time tstg(2) ICP = 5.5 A, IB1 (end) = 0.8 A ― 2.3 ―
µs
Fall Time tf(2) fH = 80 kHz ― 0.1 ―

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IC – VCE
10
2.5 1.8 2.0
1.4 1.6
1.2
1.0
8
IC (A)

0.8
0.6
6
Collector current

0.4

IB = 0.2 A
4

Common emitter
Tc = 25℃
0
0 2 4 6 8 10

Collector-emitter voltage VCE (V)

hFE – IC
100

Tc = 100°C

25
hFE

−25
DC current gain

10

Common emitter
VCE = 5 V
1
0.01 0.1 1 10

Collector current IC (A)

IC – VBE
10
Common emitter
VCE = 5 V

8
IC (A)

Tc = 100°C
Collector current

−25

2
25

0
0 0.2 0.4 0.6 0.8 1.0 1.2

Base-emitter voltage VBE (V)

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VCE – IB VCE(sat) – IC
10
Common emitter 10 6 Common emitter
Tc = −25℃ 10 Tc = −25℃
(V)

IC/IB = 4

Collector-emitter saturation voltage

8
VCE

Ic = 8 A 1

VCE(sat) (V)
6 6 7
Collector-emitter voltage

0.1

0 0.01
0 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100
Base current IB (A) Collector current IC (A)

VCE – IB VCE (sat) – IC

10 10
Common emitter Common emitter
10 6
Tc = 25℃ Tc = 25℃
(V)

Collector-emitter saturation voltage

8
VCE

IC/IB = 4
1
VCE (sat) (V)

6
Collector-emitter voltage

5 6 7 Ic = 8 A

8
4
0.1

0 0.01
0 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100
Base current IB (A) Collector current IC (A)

VCE – IB VCE (sat) – IC

10 10
Common emitter Common emitter
10 6
Tc = 100℃ Tc = 100℃
(V)

8
Collector-emitter saturation voltage
VCE

1 IC/IB = 4

6
VCE (sat) (V)
Collector-emitter voltage

5 6 7 Ic = 8 A

4
0.1

0 0.01
0 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100

Base current IC (A) Collector current IC (A)

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rth(j-c) – tw
10

(junction-case) rth(j-c) (°C/W)

Transient thermal impedance 1

0.1

0.01
Tc = 25℃ (Infinite heat sink)
Curves should be applied in thermal
limited area. (single nonrepetitive pulse)
0.001
10μ 100μ 1m 10m 100m 1 10 100 1000

Pulse width tw (s)

Safe Operating Area Reverse Bias – Safe Operating Area

100 100

IC max (Pulse) 290V,20A

IC max (Pulse)* 1 ms* 100 µs* 10 µs*

10
IC max (Continuous)
10
Collector current IC (A)

Collector current IC (A)

1
DC operation
10 ms*
1 Tc = 25°C

100 ms*
0.1

0.1
*:Single nonrepetitive pulse
0.01
Tc = 25°C
Curves must be derated Ta = 25℃
Non repeated pulse
linearly with increase in
VCEO max IB2 = −2A
temperature. 1500V,2mA VCBO max
0.01 L = 500 μH
1 10 100 1000 0.001
10 100 1000 10000
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)

PC – Tc
100
Infinite heat sink
PC (W)

80
Collector power dissipation

60

40

20

0
0 25 50 75 100 125 150

Case temperature Tc (°C)

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RESTRICTIONS ON PRODUCT USE 030619EAA

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

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