The 2N4410 is an NPN silicon transistor manufactured by Central Semiconductor for general purpose amplifier applications. It is made using an epitaxial planar process and housed in a TO-92 plastic package. The transistor has a continuous collector current rating of 250mA, power dissipation of 625mW, and frequency performance up to 300MHz. Central Semiconductor provides various product and design support services for customers.
The 2N4410 is an NPN silicon transistor manufactured by Central Semiconductor for general purpose amplifier applications. It is made using an epitaxial planar process and housed in a TO-92 plastic package. The transistor has a continuous collector current rating of 250mA, power dissipation of 625mW, and frequency performance up to 300MHz. Central Semiconductor provides various product and design support services for customers.
The 2N4410 is an NPN silicon transistor manufactured by Central Semiconductor for general purpose amplifier applications. It is made using an epitaxial planar process and housed in a TO-92 plastic package. The transistor has a continuous collector current rating of 250mA, power dissipation of 625mW, and frequency performance up to 300MHz. Central Semiconductor provides various product and design support services for customers.
The 2N4410 is an NPN silicon transistor manufactured by Central Semiconductor for general purpose amplifier applications. It is made using an epitaxial planar process and housed in a TO-92 plastic package. The transistor has a continuous collector current rating of 250mA, power dissipation of 625mW, and frequency performance up to 300MHz. Central Semiconductor provides various product and design support services for customers.
w w w. c e n t r a l s e m i . c o m NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4410 is a small signal NPN silicon transistor, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 250 mA Power Dissipation PD 625 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 200 °C/W Thermal Resistance ΘJC 83.3 °C/W
SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=100V 10 nA ICBO VCB=100V, TA=100°C 1.0 μA IEBO VEB=4.0V 100 nA BVCBO IC=10μA 120 V BVCEX VBE=5.0V, IC=500μA, RBE=8.2kΩ 120 V BVCEO IC=1.0mA 80 V BVEBO IE=10μA 5.0 V VCE(SAT) IC=1.0mA, IB=100μA 200 mV VBE(SAT) IC=1.0mA, IB=100μA 800 mV VBE(ON) VCE=5.0V, IC=1.0mA 800 mV hFE VCE=1.0V, IC=1.0mA 60 hFE VCE=1.0V, IC=10mA 60 400 fT VCE=10V, IC=10mA, f=20MHz 60 300 MHz Cob VCB=10V, IE=0, f=1.0MHz 12 pF Cib VEB=0.5V, IC=0, f=1.0MHz 50 pF
R0 (18-October 2010) 2N4410
NPN SILICON TRANSISTOR
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Emitter 2) Base 3) Collector
MARKING: FULL PART NUMBER
R0 (18-October 2010) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES
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REQUESTING PRODUCT PLATING
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