The document provides specifications for the 2N3700 and 2N3701 silicon NPN transistors from Central Semiconductor. The transistors are designed for high current general purpose applications in a TO-18 case. Key specifications include maximum ratings of 140V collector-base voltage, 80V collector-emitter voltage, and 1A continuous collector current. Electrical characteristics include gain ranges of 50-300 and 30-120, saturation voltages below 0.5V, and current gains down to 15 at 1A collector current.
The document provides specifications for the 2N3700 and 2N3701 silicon NPN transistors from Central Semiconductor. The transistors are designed for high current general purpose applications in a TO-18 case. Key specifications include maximum ratings of 140V collector-base voltage, 80V collector-emitter voltage, and 1A continuous collector current. Electrical characteristics include gain ranges of 50-300 and 30-120, saturation voltages below 0.5V, and current gains down to 15 at 1A collector current.
The document provides specifications for the 2N3700 and 2N3701 silicon NPN transistors from Central Semiconductor. The transistors are designed for high current general purpose applications in a TO-18 case. Key specifications include maximum ratings of 140V collector-base voltage, 80V collector-emitter voltage, and 1A continuous collector current. Electrical characteristics include gain ranges of 50-300 and 30-120, saturation voltages below 0.5V, and current gains down to 15 at 1A collector current.
The document provides specifications for the 2N3700 and 2N3701 silicon NPN transistors from Central Semiconductor. The transistors are designed for high current general purpose applications in a TO-18 case. Key specifications include maximum ratings of 140V collector-base voltage, 80V collector-emitter voltage, and 1A continuous collector current. Electrical characteristics include gain ranges of 50-300 and 30-120, saturation voltages below 0.5V, and current gains down to 15 at 1A collector current.
2N3701 w w w. c e n t r a l s e m i . c o m SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 are silicon NPN transistors designed for high current general purpose applications.
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TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Continuous Collector Current IC 1.0 A Power Dissipation (TC=25°C) PD 1.8 W Power Dissipation PD 500 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance ΘJA 350 °C/W Thermal Resistance ΘJC 97.2 °C/W
2N3700 2N3701 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS fT VCE=10V, IC=50mA, f=20MHz 100 400 80 400 MHz Cob VCB=10V, IE=0, f=1.0MHz - 12 - 12 pF Cib VEB=0.5V, IC=0, f=1.0MHz - 60 - 60 pF hfe VCE=5.0V, IC=1.0mA, f=1.0kHz 80 400 30 200 rb’Cc VCB=10V, IE=10mA, f=4.0MHz 25 400 25 400 pS NF VCE=10V, IC=100μA, f=1.0kHz, RS=1.0kΩ - 4.0 - 4.0 dB
TO-18 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Emitter 2) Base 3) Collector
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