The 2N3019 and 2N3020 are NPN silicon transistors designed for general purpose amplifier applications. They have maximum ratings including collector-base voltage up to 140V, collector-emitter voltage up to 80V, and continuous collector current up to 1A. The transistors have typical characteristics such as current gain from 50-300 and frequency response up to 100MHz. They are packaged in a standard TO-39 case.
The 2N3019 and 2N3020 are NPN silicon transistors designed for general purpose amplifier applications. They have maximum ratings including collector-base voltage up to 140V, collector-emitter voltage up to 80V, and continuous collector current up to 1A. The transistors have typical characteristics such as current gain from 50-300 and frequency response up to 100MHz. They are packaged in a standard TO-39 case.
The 2N3019 and 2N3020 are NPN silicon transistors designed for general purpose amplifier applications. They have maximum ratings including collector-base voltage up to 140V, collector-emitter voltage up to 80V, and continuous collector current up to 1A. The transistors have typical characteristics such as current gain from 50-300 and frequency response up to 100MHz. They are packaged in a standard TO-39 case.
The 2N3019 and 2N3020 are NPN silicon transistors designed for general purpose amplifier applications. They have maximum ratings including collector-base voltage up to 140V, collector-emitter voltage up to 80V, and continuous collector current up to 1A. The transistors have typical characteristics such as current gain from 50-300 and frequency response up to 100MHz. They are packaged in a standard TO-39 case.
The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Continuous Collector Current IC 1.0 A Power Dissipation PD 0.8 W Power Dissipation (TC=25°C) PD 5.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
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