The 2N3903 and 2N3904 are NPN silicon transistors designed for general purpose amplifier and switching applications. They have maximum ratings including collector-emitter voltage up to 40V, continuous collector current up to 200mA, and power dissipation up to 625mW. The document provides detailed electrical characteristics for the transistors such as gain, saturation voltage, frequency response, and switching times.
The 2N3903 and 2N3904 are NPN silicon transistors designed for general purpose amplifier and switching applications. They have maximum ratings including collector-emitter voltage up to 40V, continuous collector current up to 200mA, and power dissipation up to 625mW. The document provides detailed electrical characteristics for the transistors such as gain, saturation voltage, frequency response, and switching times.
The 2N3903 and 2N3904 are NPN silicon transistors designed for general purpose amplifier and switching applications. They have maximum ratings including collector-emitter voltage up to 40V, continuous collector current up to 200mA, and power dissipation up to 625mW. The document provides detailed electrical characteristics for the transistors such as gain, saturation voltage, frequency response, and switching times.
The 2N3903 and 2N3904 are NPN silicon transistors designed for general purpose amplifier and switching applications. They have maximum ratings including collector-emitter voltage up to 40V, continuous collector current up to 200mA, and power dissipation up to 625mW. The document provides detailed electrical characteristics for the transistors such as gain, saturation voltage, frequency response, and switching times.
The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 types are NPN silicon transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N3905 and 2N3906.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 200 mA Power Dissipation PD 625 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 200 °C/W
