This document provides specifications for the H945 NPN silicon transistor. It is designed for use in audio frequency amplifiers and low-speed switching. Key electrical characteristics include a current gain between 90-600, collector-emitter saturation voltage of 0.3V or less, and breakdown voltages of 60V collector-base and 50V collector-emitter. Noise figure is rated at 4dB maximum. The transistor comes in hFE gain classifications of R, Q, P, and K types with corresponding current gain ranges.
This document provides specifications for the H945 NPN silicon transistor. It is designed for use in audio frequency amplifiers and low-speed switching. Key electrical characteristics include a current gain between 90-600, collector-emitter saturation voltage of 0.3V or less, and breakdown voltages of 60V collector-base and 50V collector-emitter. Noise figure is rated at 4dB maximum. The transistor comes in hFE gain classifications of R, Q, P, and K types with corresponding current gain ranges.
This document provides specifications for the H945 NPN silicon transistor. It is designed for use in audio frequency amplifiers and low-speed switching. Key electrical characteristics include a current gain between 90-600, collector-emitter saturation voltage of 0.3V or less, and breakdown voltages of 60V collector-base and 50V collector-emitter. Noise figure is rated at 4dB maximum. The transistor comes in hFE gain classifications of R, Q, P, and K types with corresponding current gain ranges.
This document provides specifications for the H945 NPN silicon transistor. It is designed for use in audio frequency amplifiers and low-speed switching. Key electrical characteristics include a current gain between 90-600, collector-emitter saturation voltage of 0.3V or less, and breakdown voltages of 60V collector-base and 50V collector-emitter. Noise figure is rated at 4dB maximum. The transistor comes in hFE gain classifications of R, Q, P, and K types with corresponding current gain ranges.
█ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions
BVCBO Collector-Base Breakdown Voltage 60 V IC=100μA, IE=0
BVCEO Collector-Emitter Breakdown Voltage 50 V IC=100μA, IB=0 BVEBO Emitter-Base Breakdown Voltage 5 V IE=100μA，IC=0 HFE DC Current Gain 90 600 VCE=6V, IC=1mA VCE(sat) Collector- Emitter Saturation Voltage 0.3 V IC=100mA, IB=10mA VBE(sat) Base-Emitter Saturation Voltage 1.0 V IC=100mA, IB=10mA ICBO Collector Cut-off Current 100 nA VCB=60V, IE=0 IEBO Emitter Cut-off Current 100 nA VEB=5V, IC=0 fT Current Gain-Bandwidth Product 250 MHz VCE=6V, IC=10mA Cob Output Capacitance 3.0 pF VCB=6V, IE=0，f=1MHz VCE=6V,IC=0.5mA，f=1KHz， NF Noise Figure 4.0 dB Rs=500Ω
█ hFE Classification
R Q P K
90—180 135—270 200—400 300—600
NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H945
