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Shantou Huashan Electronic Devices Co.,Ltd.: Audio Frequency Amplifier High Frequency Osc

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Enrique Luzardo

This document provides specifications for an NPN silicon transistor. It lists maximum ratings including storage temperature, junction temperature and collector dissipation. It also provides electrical characteristics such as collector cutoff current, emitter cutoff current, DC current gain, collector-emitter saturation voltage, and breakdown voltages.

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Shantou Huashan Electronic Devices Co.,Ltd.: Audio Frequency Amplifier High Frequency Osc

Uploaded by

Enrique Luzardo
18 views1 page
This document provides specifications for an NPN silicon transistor. It lists maximum ratings including storage temperature, junction temperature and collector dissipation. It also provides electrical characteristics such as collector cutoff current, emitter cutoff current, DC current gain, collector-emitter saturation voltage, and breakdown voltages.

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h1815

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This document provides specifications for an NPN silicon transistor. It lists maximum ratings including storage temperature, junction temperature and collector dissipation. It also provides electrical characteristics such as collector cutoff current, emitter cutoff current, DC current gain, collector-emitter saturation voltage, and breakdown voltages.

Copyright:

© All Rights Reserved
Download as PDF, TXT or read online from Scribd
Download as pdf or txt
18 views1 page

Shantou Huashan Electronic Devices Co.,Ltd.: Audio Frequency Amplifier High Frequency Osc

Uploaded by

Enrique Luzardo
This document provides specifications for an NPN silicon transistor. It lists maximum ratings including storage temperature, junction temperature and collector dissipation. It also provides electrical characteristics such as collector cutoff current, emitter cutoff current, DC current gain, collector-emitter saturation voltage, and breakdown voltages.

Copyright:

© All Rights Reserved
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N P N S I L I C O N T RAN S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.


H1815
█ AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92

T stg ——Storage Temperature………………………… -55~150℃

T j ——Junction Temperature…………………………………150℃

PC——Collector Dissipation…………………………………400mW
1―Emitter，E
VCBO——Collector-Base Voltage………………………………60V 2―Collector，C
3―Base，B
VCEO——Collector-Emitter Voltage……………………………50V

V EB O ——Emitter-Base Voltage………………………………5V

I C ——Collector Current……………………………………150mA

█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol Characteristics Min Typ Max Unit Test Conditions
ICBO Collector Cut-off Current 100 nA VCB=60V, IE=0
IEBO Emitter Cut-off Current 100 nA VEB=5V, IC=0
HFE(1) DC Current Gain 70 700 VCE=6V, IC=2mA
HFE(2) 25 VCE=6V, IC=150mA
VCE(sat) Collector- Emitter Saturation Voltage 250 mV IC=100mA, IB=10mA
VBE(sat) Base-Emitter Saturation Voltage 1.0 V IC=100mA, IB=10mA
BVCBO Collector-Base Breakdown Voltage 60 V IC=100μA, IE=0
BVCEO Collector-Emitter Breakdown Voltage 50 V IC=1mA, IB=0
BVEBO Emitter-Base Breakdown Voltage 5 V IE=100μA，IC=0
fT Current Gain-Bandwidth Product 80 MHz VCE=10V, IC=1mA

█ hFE Classification

O Y GR BL

70—140 120—240 200—400 350—700

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