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Unisonic Technologies Co., LTD: Audio Frequency Amplifier High Frequency Osc NPN Transistor

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Rizal Gembul

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Unisonic Technologies Co., LTD: Audio Frequency Amplifier High Frequency Osc NPN Transistor

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Rizal Gembul
41 views4 pages
Data set

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sc945

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41 views4 pages

Unisonic Technologies Co., LTD: Audio Frequency Amplifier High Frequency Osc NPN Transistor

Uploaded by

Rizal Gembul
Data set

Copyright:

© All Rights Reserved
Download as PDF, TXT or read online from Scribd
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UNISONIC TECHNOLOGIES CO.

, LTD
2SC945 NPN SILICON TRANSISTOR

AUDIO FREQUENCY
AMPLIFIER HIGH FREQUENCY
OSC NPN TRANSISTOR

„ DESCRIPTION
The UTC 2SC945 is an audio frequency amplifier high
frequency OSC NPN transistor.
„ FEATURES
* Collector-Emitter voltage:
BVCBO=50V
* Collector current up to 150mA
* High hFE linearity Lead-free: 2SC945L
* Complimentary to UTC 2SA733 Halogen-free: 2SC945G

„ ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Normal Lead Free Plating Halogen Free 1 2 3
2SC945-x-T92-B 2SC945L-x-T92-B 2SC945G-x-T92-B TO-92 E C B Tape Box
2SC945-x-T92-K 2SC945L-x-T92-K 2SC945G-x-T92-K TO-92 E C B Bulk

www.unisonic.com.tw 1of 4
Copyright © 2009 Unisonic Technologies Co., Ltd QW-R201-005.C
2SC945 NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified )


PARAMETER SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Dissipation(Ta=25°C) PC 250 mW
Collector Current IC 150 mA
Base Current IB 50 mA
Junction Temperature TJ 125 °С
Storage Temperature TSTG -55 ~ +150 °С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=100μA, IE=0 60 V
Collector-Emitter Breakdown Voltage BVCEO IC=10mA, IB=0 50 V
Collector Cut-Off Current ICBO VCB=40V, IE=0 100 nA
Emitter Cut-Off Current IEBO VEB=3V, IC=0 100 nA
DC Current Gain hFE VCE=6V, IC=1mA 90 600
Collector-Emitter Saturation Voltage VCE(SAT) Ic=100mA, IB=10mA 0.1 0.3 V
Current Gain Bandwidth Product fT VCE=10V, IC=50mA 100 190 MHz
Output Capacitance Cob VCB=10V, IE=0, f=1MHz 2.0 3.0 pF
IC=-0.1mA, VCE=6V
Noise Figure NF 4.0 6.0 dB
RG=10kΩ, f=100Hz

„ CLASSIFICATION OF hFE
RANK R Q P K
RANGE 90-180 135-270 200-400 300-600

UNISONIC TECHNOLOGIES CO., LTD 2 of 4


www.unisonic.com.tw QW-R201-005,C
2SC945 NPN SILICON TRANSISTOR

„ TYPICAL CHARACTERISTICS
Collector Current, IC (mA)

DC Current Gain, hFE


Collector Current, IC (mA)

Saturation Voltage (mV)

Current Gain-Bandwidth Product Collector Output Capacitance

103 102

VCE=6V
f=1MHz
102 101 IE=0

101 100

100 10-1
10-1 10 0 1
10 2
10 100 101 102 103
Collector Current, IC (mA) Collector-Base Voltage (V)

UNISONIC TECHNOLOGIES CO., LTD 3 of 4


www.unisonic.com.tw QW-R201-005,C
2SC945 NPN SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD 4 of 4


www.unisonic.com.tw QW-R201-005,C

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