This document provides information on the 2N5551 NPN silicon transistor. It is a high voltage switching transistor with a collector-emitter voltage up to 160V and high current gain. It is suitable for use in telephone switching circuits and amplifiers. The document lists the transistor's key electrical characteristics and ratings, packaging and ordering information, and provides some typical performance curves.
This document provides information on the 2N5551 NPN silicon transistor. It is a high voltage switching transistor with a collector-emitter voltage up to 160V and high current gain. It is suitable for use in telephone switching circuits and amplifiers. The document lists the transistor's key electrical characteristics and ratings, packaging and ordering information, and provides some typical performance curves.
This document provides information on the 2N5551 NPN silicon transistor. It is a high voltage switching transistor with a collector-emitter voltage up to 160V and high current gain. It is suitable for use in telephone switching circuits and amplifiers. The document lists the transistor's key electrical characteristics and ratings, packaging and ordering information, and provides some typical performance curves.
This document provides information on the 2N5551 NPN silicon transistor. It is a high voltage switching transistor with a collector-emitter voltage up to 160V and high current gain. It is suitable for use in telephone switching circuits and amplifiers. The document lists the transistor's key electrical characteristics and ratings, packaging and ordering information, and provides some typical performance curves.
ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3 2N5551-x-AB3-R 2N5551L-x-AB3-R 2N5551G-x-AB3-R SOT-89 B C E Tape Reel 2N5551-x-T92-B 2N5551L-x-T92-B 2N5551G-x-T92-B TO-92 E B C Tape Box 2N5551-x-251-K 2N5551L-x-251-K 2N5551G-x-251 TO-251 E B C Tube ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Dissipation TO-92 625 mW PC Collector Dissipation SOT-89 500 mW Collector Current IC 600 mA Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=100μA, IE=0 180 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 160 V Emitter-Base Breakdown Voltage BVEBO IE=10μA, IC=0 6 V Collector Cut-off Current ICBO VCB=120V, IE=0 50 nA Emitter Cut-off Current IEBO VBE=4V,IC=0 50 nA hFE1 VCE=5V, IC=1mA 80 DC Current Gain(Note) hFE2 VCE=5V, IC=10mA 80 160 400 hFE3 VCE=5V, IC=50mA 80 IC=10mA, IB=1mA 0.15 Collector-Emitter Saturation Voltage VCE(SAT) V IC=50mA, IB=5mA 0.2 IC=10mA, IB=1mA 1 Base-Emitter Saturation Voltage VBE(SAT) V IC=50mA, IB=5mA 1 Current Gain Bandwidth Product fT VCE=10V, IC=10mA, f=100MHz 100 300 MHz Output Capacitance Cob VCB=10V, IE=0 f=1MHz 6.0 pF IC=0.25mA, VCE=5V Noise Figure NF 8 dB RS=1kΩ, f=10Hz ~ 15.7kHz Note: Pulse test: PW<300μs, Duty cycle<2% CLASSIFICATION OF hFE RANK A B C RANGE 80-170 150-240 200-400 2N5551 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS
Collector Output Capacitance DC Current Gain
10 103
VCE=5V 8 f=1MHz IE=0 102 6
4 101 2
0 100 10 0 101 102 10-1 100 101 102 103 Collector-Base Voltage (V) Collector Current, IC (mA) Collector Current, IC (mA)
