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Li et al., 2001 - Google Patents

Ferroelectric Pb5Ge3O11 MFMOS capacitor for one transistor memory applications

Li et al., 2001

Document ID
1623217430801398660
Author
Li T
Hsu S
Publication year
Publication venue
Integrated ferroelectrics

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Snippet

The basic mechanism for an one transistor memory device has been studied. Many ferroelectric materials such PbZrxTi1− xO3 (PZT), SrBi2Ta2O9 (SBT), Pb5Ge3O11 (PGO) etc. were analyzed for this application. Because of its low remanent polarization and low …
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