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Tokumitsu et al., 1999 - Google Patents

Nonvolatile ferroelectric-gate field-effect transistors using SrBi 2 Ta 2 O 9/Pt/SrTa 2 O 6/SiON/Si structures

Tokumitsu et al., 1999

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Document ID
2990328991990497252
Author
Tokumitsu E
Fujii G
Ishiwara H
Publication year
Publication venue
Applied physics letters

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We report fabrication and characterization of p-channel metal–ferroelectric-metal–insulator– semiconductor (MFMIS) field-effect transistors (FETs) using the Pt/SrBi 2 Ta 2 O 9/Pt/SrTa 2 O 6/SiON/Si structures. It is shown that SrTa 2 O 6/SiON stacked layer is suitable as an “I” …
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