ZA200810662B - Cold-pressed sputter targets - Google Patents
Cold-pressed sputter targetsInfo
- Publication number
- ZA200810662B ZA200810662B ZA200810662A ZA200810662A ZA200810662B ZA 200810662 B ZA200810662 B ZA 200810662B ZA 200810662 A ZA200810662 A ZA 200810662A ZA 200810662 A ZA200810662 A ZA 200810662A ZA 200810662 B ZA200810662 B ZA 200810662B
- Authority
- ZA
- South Africa
- Prior art keywords
- cold
- pressed
- sputter targets
- sputter
- targets
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/02—Compacting only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Coating By Spraying Or Casting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006026005A DE102006026005A1 (de) | 2006-06-01 | 2006-06-01 | Kaltgepresste Sputtertargets |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA200810662B true ZA200810662B (en) | 2009-12-30 |
Family
ID=38421730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA200810662A ZA200810662B (en) | 2006-06-01 | 2008-12-18 | Cold-pressed sputter targets |
Country Status (9)
Country | Link |
---|---|
US (1) | US20090277777A1 (xx) |
EP (1) | EP2024529A1 (xx) |
JP (1) | JP2009538984A (xx) |
KR (1) | KR20090031499A (xx) |
CN (1) | CN101460650A (xx) |
DE (1) | DE102006026005A1 (xx) |
RU (1) | RU2008150855A (xx) |
WO (1) | WO2007137824A1 (xx) |
ZA (1) | ZA200810662B (xx) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007060306B4 (de) * | 2007-11-29 | 2011-12-15 | W.C. Heraeus Gmbh | Magnetische Shunts in Rohrtargets |
KR101249566B1 (ko) * | 2009-07-27 | 2013-04-01 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Cu-Ga 소결체 스퍼터링 타깃 및 동 타깃의 제조 방법 |
CN102234765B (zh) * | 2010-04-23 | 2013-04-17 | 昆明物理研究所 | 一种生长碲镉汞薄膜的靶材制备方法 |
JP4948634B2 (ja) | 2010-09-01 | 2012-06-06 | Jx日鉱日石金属株式会社 | インジウムターゲット及びその製造方法 |
WO2012074609A1 (en) | 2010-11-30 | 2012-06-07 | Dow Global Technologies Llc | Refurbishing copper and indium containing alloy sputter targets |
US9150958B1 (en) | 2011-01-26 | 2015-10-06 | Apollo Precision Fujian Limited | Apparatus and method of forming a sputtering target |
JP5140169B2 (ja) | 2011-03-01 | 2013-02-06 | Jx日鉱日石金属株式会社 | インジウムターゲット及びその製造方法 |
JP5026611B1 (ja) * | 2011-09-21 | 2012-09-12 | Jx日鉱日石金属株式会社 | 積層構造体及びその製造方法 |
JP5074628B1 (ja) * | 2012-01-05 | 2012-11-14 | Jx日鉱日石金属株式会社 | インジウム製スパッタリングターゲット及びその製造方法 |
KR20140054169A (ko) | 2012-08-22 | 2014-05-08 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 인듐제 원통형 스퍼터링 타깃 및 그 제조 방법 |
WO2015002253A1 (ja) * | 2013-07-05 | 2015-01-08 | Agcセラミックス株式会社 | スパッタリングターゲット及びその製造方法 |
WO2015004958A1 (ja) | 2013-07-08 | 2015-01-15 | Jx日鉱日石金属株式会社 | スパッタリングターゲット及び、それの製造方法 |
JP2015017297A (ja) * | 2013-07-10 | 2015-01-29 | 三菱マテリアル株式会社 | In系円筒形スパッタリングターゲットおよびその製造方法 |
EP2947175A1 (en) * | 2014-05-21 | 2015-11-25 | Heraeus Deutschland GmbH & Co. KG | CuSn, CuZn and Cu2ZnSn sputter targets |
US11450516B2 (en) * | 2019-08-14 | 2022-09-20 | Honeywell International Inc. | Large-grain tin sputtering target |
AT18282U1 (de) * | 2023-05-16 | 2024-08-15 | Plansee Composite Mat Gmbh | Segmentiertes Ringtarget |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT388752B (de) * | 1986-04-30 | 1989-08-25 | Plansee Metallwerk | Verfahren zur herstellung eines targets fuer die kathodenzerstaeubung |
DE4115663A1 (de) * | 1991-05-14 | 1992-11-19 | Leybold Ag | Verfahren zur herstellung eines targets, insbesondere eines rohrtargets einer sputtervorrichtung |
FR2680799B1 (fr) * | 1991-09-03 | 1993-10-29 | Elf Aquitaine Ste Nale | Element de cible pour pulverisation cathodique, procede de preparation dudit element et cibles, notamment de grande surface, realisees a partir de cet element. |
US5342571A (en) * | 1992-02-19 | 1994-08-30 | Tosoh Smd, Inc. | Method for producing sputtering target for deposition of titanium, aluminum and nitrogen coatings, sputtering target made thereby, and method of sputtering with said targets |
WO1996036746A1 (fr) * | 1995-05-18 | 1996-11-21 | Asahi Glass Company Ltd. | Procede de production d'une cible de pulverisation |
KR100567472B1 (ko) * | 1995-08-31 | 2006-07-03 | 이노베이티브 스퍼터링 테크놀로지 | 무기공의 분말야금 합금 물품, 이의 제조 방법, 연속 플라즈마 스퍼터링 장치, 연속 플라즈마 스퍼터링 방법 및 ito 관상 타겟 제조 방법 |
JPH10270733A (ja) * | 1997-01-24 | 1998-10-09 | Asahi Chem Ind Co Ltd | p型半導体、p型半導体の製造方法、光起電力素子、発光素子 |
US6010583A (en) * | 1997-09-09 | 2000-01-04 | Sony Corporation | Method of making unreacted metal/aluminum sputter target |
US6749103B1 (en) * | 1998-09-11 | 2004-06-15 | Tosoh Smd, Inc. | Low temperature sputter target bonding method and target assemblies produced thereby |
JP4826066B2 (ja) * | 2004-04-27 | 2011-11-30 | 住友金属鉱山株式会社 | 非晶質の透明導電性薄膜およびその製造方法、並びに、該非晶質の透明導電性薄膜を得るためのスパッタリングターゲットおよびその製造方法 |
US7833821B2 (en) * | 2005-10-24 | 2010-11-16 | Solopower, Inc. | Method and apparatus for thin film solar cell manufacturing |
-
2006
- 2006-06-01 DE DE102006026005A patent/DE102006026005A1/de not_active Withdrawn
-
2007
- 2007-05-30 WO PCT/EP2007/004754 patent/WO2007137824A1/de active Application Filing
- 2007-05-30 CN CNA2007800201155A patent/CN101460650A/zh active Pending
- 2007-05-30 KR KR1020087025817A patent/KR20090031499A/ko not_active Withdrawn
- 2007-05-30 RU RU2008150855/02A patent/RU2008150855A/ru not_active Application Discontinuation
- 2007-05-30 US US12/296,462 patent/US20090277777A1/en not_active Abandoned
- 2007-05-30 EP EP07725645A patent/EP2024529A1/de not_active Withdrawn
- 2007-05-30 JP JP2009512483A patent/JP2009538984A/ja not_active Withdrawn
-
2008
- 2008-12-18 ZA ZA200810662A patent/ZA200810662B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE102006026005A1 (de) | 2007-12-06 |
US20090277777A1 (en) | 2009-11-12 |
JP2009538984A (ja) | 2009-11-12 |
EP2024529A1 (de) | 2009-02-18 |
CN101460650A (zh) | 2009-06-17 |
WO2007137824A1 (de) | 2007-12-06 |
RU2008150855A (ru) | 2010-07-20 |
KR20090031499A (ko) | 2009-03-26 |
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