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US4301324A - Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper - Google Patents

Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper Download PDF

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Publication number
US4301324A
US4301324A US05/875,703 US87570378A US4301324A US 4301324 A US4301324 A US 4301324A US 87570378 A US87570378 A US 87570378A US 4301324 A US4301324 A US 4301324A
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US
United States
Prior art keywords
glass
article
gold
silver
ceramic
Prior art date
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Expired - Lifetime
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US05/875,703
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English (en)
Inventor
Ananda H. Kumar
Peter W. McMillan
Rao R. Tummala
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International Business Machines Corp
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International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to US05/875,703 priority Critical patent/US4301324A/en
Priority to CA314,417A priority patent/CA1109664A/en
Priority to FR7837093A priority patent/FR2416203A1/fr
Priority to BE192779A priority patent/BE873329A/xx
Priority to DE2901172A priority patent/DE2901172C3/de
Priority to AT0028979A priority patent/AT377966B/de
Priority to CH38779A priority patent/CH645602A5/de
Priority to GB7901661A priority patent/GB2013650B/en
Priority to JP404879A priority patent/JPS54111517A/ja
Priority to SE7900880A priority patent/SE444308B/sv
Priority to IT19842/79A priority patent/IT1110275B/it
Priority to ES477459A priority patent/ES477459A1/es
Priority to NL7900926A priority patent/NL7900926A/xx
Priority to JP56058703A priority patent/JPS5946900B2/ja
Priority to CA377,129A priority patent/CA1122789A/en
Priority to US06/276,236 priority patent/US4413061A/en
Application granted granted Critical
Publication of US4301324A publication Critical patent/US4301324A/en
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/16—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay
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    • C04B35/19—Alkali metal aluminosilicates, e.g. spodumene
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    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0009—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing silica as main constituent
    • C—CHEMISTRY; METALLURGY
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    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0018—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents
    • C03C10/0027—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents containing SiO2, Al2O3, Li2O as main constituents
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    • C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
    • C03C10/0045—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents containing SiO2, Al2O3 and MgO as main constituents
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    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6567—Treatment time
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets

Definitions

  • This invention relates to glass-ceramic structures and, more particularly, to thick or thin film or hybrid, inter-connected multilayer substrates made of sintered glass-ceramic insulator and conducting patterns made of thick film gold, silver or copper (for electronic devices). Also, this invention relates to the process and materials for producing such substrates starting with certain glass powders and conductor "inks” or “pastes” containing finely divided powders of gold, silver or copper by the so-called “laminated green sheet” technique at firing temperatures not exceeding the melting points of the conductor metal employed.
  • the substrates may be designed with termination pads for attaching semiconductor chips, connector leads, capacitors, resistors, covers, etc. Interconnections between buried conductor layers can be achieved through the so-called “vias” formed by metal-paste-filled holes in the individual layers formed prior to lamination which upon sintering will become densely sintered metal interconnections.
  • Alumina Al 2 O 3
  • thermal conductivity thermal conductivity
  • stability and strength is generally the material of choice for substrate fabrication.
  • K the relatively high dielectric constant, hereinafter designated by the letter "K"
  • K Al 2 O 3 ⁇ 10 entails significant signal propogation delays and noise.
  • aluminas ⁇ 1600° C.
  • co-sinterable conducting metallurgies to refractory metals such as tungsten, molybdenum, platinum, palladium or combinations of these with each other or with certain other metals and precludes the sole use of good electrical conductors such as gold, silver, or copper because these latter will be molten much before the sintering temperature of alumina is reached.
  • a further disadvantage of alumina is its relatively high thermal expansion coefficient ( ⁇ 65-70 ⁇ 10 -7 /°C.) compared to that of silicon semiconductor chips ( ⁇ 35 ⁇ 10 -7 /°C.) which may, in certain cases, result in some design and reliability concerns.
  • glass-ceramics are obtained through the controlled, in-situ, crystallization of a glass body of proper composition brought about by a two-step heat treatment procedure.
  • the glass composition generally includes substances called nucleating agents examples of which are TiO 2 , ZrO 2 , P 2 O 5 , SnO 2 and certain colloidal metal particles.
  • the resultant body is composed of a multitude of fine grained crystals of substantially uniform size homogeneously dispersed in a glassy matrix, the crystal phase constituting the major portion of the body.
  • the high degree of crystallinity, their very small dimensions and the absence of porosity make these glass-ceramics generally superior in strength to the precursor glasses and other properties such as thermal expansivity, chemical durability etc. closely resemble those of the crystalline phase formed.
  • glass-ceramic bodies made in accordance with the above or similar methods wherein a glass article shaped by conventional glass making techniques such as drawing, pressing, blowing etc. of hot, plastic glass mass followed by conversion to the glass-ceramic state by suitable heat treatments will be, hereinafter, referred to as "bulk-crystallized” or simply as “bulk” glass-ceramics to distinguish them from the sintered glass-ceramics of this invention.
  • U.S. Pat. No. 3,825,468 refers to sintered glass-ceramic bodies which are porous in the interior and non-porous in the exterior surfaces. Such bodies would have low rupture strengths due mainly to the internal porosity, with typical flexural strengths of less than 10,000 psi. Furthermore, the final sintering temperatures for these glass-ceramics would be well in excess of 1000° C. and hence above the melting points of gold, silver and copper. Another example is U.S. Pat. No.
  • Numerous glass compositions allow sintering to dense bodies at temperatures below 1000° C. but are unsuitable for the purposes of this invention owing to the fact the relatively high fluidity (viscosity of 10 5 to 10 8 poises) at the sintering temperature would result in excessive movement of the buried conductor patterns and otherwise prevent the attainment of the rigid tolerances for dimensions and distortion that have to be met.
  • the rupture strengths of glasses, typically above 10,000 psi, are also much lower than desired for this application.
  • the glasses of the compositions described herein undergo crystallization during the sintering heat treatment forming pervasive rigid networks of micron-sized crystallites which drastically reduces the overall fluidity of the body thereby enabling greater dimensional and distortional control.
  • the primary object of this invention is to provide glass-ceramic bodies, having low dielectric constants and other useful properties for substrate applications, which can be easily obtained by the sintering of certain glass powders and concurrent conversion into glass-ceramics at lower temperatures than similar materials known from prior art.
  • Another object is to provide materials of lower dielectric constant than prior inorganic materials used in multilayer substrate applications.
  • a further object is to provide new glass-ceramic compositions suitable for the production of such bodies which are characterized as essentially non-porous and which possess microstructures consisting of networks of fine crystallites with the residual glass and secondary crystallites occupying the interstitial spaces of such networks.
  • This unique microstructure imparts to these glass-ceramics rupture strengths substantially higher than in sintered glass-ceramics known from prior art.
  • Another object is to provide multilayer glass-ceramic substrates which are compatible with thick film circuitry of gold, silver or copper and co-fireable therewith.
  • Another object is to provide multilayer substrates having thermal expansion coefficients closely matched to that of silicon semiconductor chips.
  • Yet another objective is to provide a method for fabricating multilayer substrates of glass-ceramics with conductor patterns of gold, silver or copper.
  • the invention embodies among its features a method of making the body by the said method, new compositions for making the body by the said method, an article comprising the body and a method of making the article, hereinafter referred to as a "multilayer glass-ceramic substrate.
  • FIG. 1 shows typical dilatometric shrinkage curves of ⁇ -spodumene glass ceramics of this invention.
  • FIG. 2 is a photomicrograph of a sintered ⁇ -spodumene glass ceramic of this invention, by scanning electron microscope (SEM) 1000X.
  • FIG. 3 shows typical dilatometric shrinkage curves for cordierite glass-ceramics of this invention.
  • FIG. 4 is a typical photomicrograph of a sintered ⁇ -cordierite glass-ceramic of this invention (SEM 2000X).
  • glass-ceramics of this invention Of the two types of glass-ceramics of this invention, one has ⁇ -spodumene, Li 2 O.Al 2 O 3 .4SiO 2 as the principal crystalline phase while the other has cordierite, 2MgO.2Al 2 O 3 .5SiO 2 , as the main crystalline phase.
  • the common feature of these sintered glass-ceramics apart from their excellent sinterability below 1000° C., is a microstructure that can be described as composed of networks that are highly crystalline, the interstices of which are occupied by small amounts of the residual glass and some discrete secondary crystallites.
  • microstructures differ from those observed in "bulk” glass-ceramics in that in the latter the glassy phase forms the matrix or the network with discrete crystallites dispersed in it.
  • SiO 2 and Al 2 O 3 contents greater than the upper limits given in Table I would not allow satisfactory sintering to be achieved.
  • the Li 2 O content should not fall below seven percent except when either B 2 O 3 and F act as fluxes and therefore facilitate sintering; they have the added advantage of assisting melting and refining of the glasses.
  • the sodium and potassium oxides are essential constituents since they promote the formation of binary lithium silicates, particularly the metasilicate as a minor crystalline phase which, as discussed below, plays a major role in the sintering process.
  • the SiO 2 and Al 2 O 3 contents must also fall within the specified ranges to ensure the development of the desired volume fraction of ⁇ -spodumene to enable the correct thermal expansion coefficient to be attained as well as to ensure high strength.
  • the P 2 O 5 and TiO 2 are desirably included to promote internal nucleation of the glass grains; inclusion of ZrO 2 also assists internal nucleation.
  • the modulus of rupture of the sintered glass-ceramics was measured in a 3-point bending mode on bar specimens and in general the mean of ten (10) determinations was calculated. Thermal expansion coefficients were measured in the range from room temperature to 300° C. using two-point method. Dielectric constants were determined at a frequency of 1 MHZ at 25° C.
  • Typical values of these properties are quoted in Table II.
  • the sintering temperatures given are those yielding optimum results but it should be understood that for each material, a sintering range exists usually extending 20° C. above and below the optimum temperature.
  • the optimum holding time at the sintering temperature was two hours, though times ranging from one to five hours also give satisfactory results.
  • glasses #1, #4, #5, and #7 yielded glass-ceramics having properties suitable for the present multilayer substrate application.
  • Compositions #3 and #6 failed to sinter satisfactorily below 1000° C. and composition #2, while it yielded a high strength material, resulted in a glass-ceramic of thermal expansion coefficient outside the desired range.
  • glass ceramics #1, #4 and #5 contained ⁇ -spodumene as the major phase and a lithium meta and disilicates as minor phases.
  • Composition #2 contained only a very small amount of ⁇ -spodumene plus a major amount of an unidentified crystal phase.
  • Composition #3 contained ⁇ -spodumene as the major phase along with minor amounts of lithium metasilicate and disilicate.
  • ⁇ -spodumene should be present as a major phase to enable the desired thermal expansion coefficient to be obtained but that binary lithium silicates must also be present as minor phases to promote sintering and densification of the glass-ceramics at temperatures below 1000° C.
  • Dilatometric shrinkage measurements of green laminates as a function temperature illustrate very well the differences between those materials containing lithium metasilicate as a minor phase and those that do not contain this phase.
  • Curve A FIG. 1 is typical of the former type (e.g. composition 190 1) and Curve B, FIG. 1 of the latter type of material (e.g. glasses #2 and #6).
  • the satisfactory material (Curve A) densification commences at a temperature of about 580° C. At this stage, the material is still uncrystallized glass. At a temperature of about 610° C., however, further densification is arrested owing to the onset of crystallization.
  • a second densification stage commences at about 910° C. and this proceeds until the glass-ceramic becomes non-porous.
  • the second densification stage is absent at temperatures below 1000° C.
  • the microstructure of the glass-ceramics obtained from such a sintering mechanism consists of cosintered ⁇ -spodumene crystals forming rigid skeletal structures with the residual glass occupying the interstitial regions in such a structure.
  • FIG. 2 is an example of such a microstructure which more resembles those of conventional ceramics obtained by sintering ceramic powders, such as alumina with minor glass additions than those of "bulk" glass-ceramics.
  • the absence of a continuous glassy matrix or network is believed to be the principal factor governing the high flexural strengths of the present materials.
  • ⁇ -spodumene glass is defined as and restricted to (1) a precursor for ⁇ -spodumene glass ceramic and (2) formed from a batch consisting of, by weight:
  • ⁇ -spodumene glass ceramic is defined as and restricted to a glass ceramic structure coalesced and crystallized from “ ⁇ -spodumene glasses” into an article having a microstructure of a pervasive continuous network of 2 to 5 ⁇ m crystallites of ⁇ -spodumene with the interstices of said network occupied by residual glass having dispersed therein discrete secondary 1 to 2 ⁇ m crystallites of lithium metasilicate.
  • composition limits are set on the one hand by the need to ensure that cordierite appears as the major crystalline phase in order to achieve desired thermal expansion coefficients and on the other to facilitate sintering below 1000° C. Reduction of MgO and Al 2 O 3 contents below the specified limits is not permissible for this reason. Excessively high Al 2 O 3 and SiO 2 contents would result in materials not capable of sintering below 1000° C. MgO contents higher than the specified maximum could result in the formation of magnesium silicates in significant amounts causing the thermal expansion coefficients to be higher than desired.
  • the minor constituents are included to perform important functions.
  • the P 2 O 5 , ZrO 2 , TiO 2 and SnO 2 are added to promote nucleation and to regulate the microstructural development.
  • the Li 2 O and B 2 O 3 are included as sintering aids; they also serve to regulate the nature of the crystalline phase formed. Cordierite can appear in either the ⁇ or ⁇ form. Sometimes, mixtures of the two appear in the same glass-ceramic. As will become clear in what follows, it has been discovered that in order to produce glass-ceramics having stable thermal expansion coefficients in the desired range as well as lower dielectric constants, it is necessary to develop the cordierite phase predominantly in the ⁇ form.
  • the method of glass preparation, grinding and green body preparation are similar to that given for the ⁇ -spodumene compositions.
  • the average particle size for the glass powder should be in the range of 2 to 7 ⁇ m for good sintering and strength.
  • Table III gives the optimum sintering temperatures for the cordierite ceramics. It has also been discovered, however, that satisfactory materials can be produced at sintering temperatures spanning 80°-100° C. covered by the exothermic peak in the thermograms of the corresponding glasses. For example, composition #10 can be satisfactorily sintered at temperatures within the range of 870° C. to 950° C. and the variation of the thermal expansion coefficient for materials sintered within this range is only ⁇ 1 ⁇ 10 7 /°C.
  • composition #8 forms ⁇ -cordierite as a major phase, together with minor amounts of ⁇ -cordierite.
  • Composition #9 contains ⁇ -cordierite as the only crystalline phase. The formation of ⁇ -cordierite confers to the glass-ceramic a somewhat higher thermal expansion coefficient as well as an apparent higher dielectric constants. It is evident that the minor constituent Li 2 O catalyses the formation of ⁇ -form of cordierite.
  • Composition #10 contains only ⁇ -cordierite due, it is believed, to the presence of boric oxide in the glass composition.
  • Composition #11 contains ⁇ -cordierite as the major phase along with some ⁇ -cordierite. Although the thermal expansion coefficient of this material for the sintering temperature of 925° C. falls within the desired range of 20 to 50 ⁇ 10 7 /°C., we have noted that the thermal expansion coefficient is dependent on the sintering temperature employed. Material sintered at 970° C. has an expansion coefficient of 36.4 ⁇ 10 7 /°C. and that sintered at 990° C. has the value of 40 ⁇ 10 7 /°C. The enhanced strength for composition #11 is thought to result from improved crystal nucleation promoted by the inclusion of ZrO 2 . This nucleant, however, also promotes the formation of the ⁇ -cordierite phase if its concentration is above a critical limit.
  • composition #12 containing lower concentrations of B 2 O 3 and ZrO 2 compared to composition #11, develops ⁇ -cordierite as the major crystal phase together with clinoenstatite as a minor phase.
  • the thermal expansion coefficient of this material is stable over a wide sintering temperature range. For sintering temperatures between 915° C. and 970° C., the expansion coefficient only varied for 23 ⁇ 10 7 /°C. to 24 ⁇ 10 7 /°C.
  • the high strength of composition #12 is attributed on the basis of microscopic and x-ray diffraction studies to a high volume fraction of the crystalline phase which occurs as a crystalline network having a very small domain size. The formation of clinoenstatite minor phase in the residual glass during sintering is also likely to have contributed to the high flexural strength of this material.
  • FIG. 3 shows typical shrinkage curves for a material that sinters to zero porosity below 1000° C. (Curve A, e.g. composition #10, Table III) and for a material that does not undergo complete densification below 1000° C. (Curve B, e.g. composition #8).
  • Curve A e.g. composition #10, Table III
  • Curve B e.g. composition #8
  • the cordierite materials undergo sintering in a single stage.
  • the densification involves predominantly glass-to-glass coalescence.
  • composition #10 can be sintered to negligible porosity at a temperature of 850° C. but examination of the material fired to this temperature shows very little crystallinity in it.
  • the critical factors that enable the distortion-free sintering to near theoretical densities of these glass-ceramics are the following: (i) the absence of a well-defined nucleation hold on the way to the sintering temperature which prevents internal nucleation and of crystallization prior to the completion of glass-to-glass sintering, (ii) the relative ease of surface nucleation compared to bulk nucleation in these glasses, such nucleation occurring despite the factor (i) above prior to glass-to-glass sintering, (ii) a clear separation between the surface nucleation and crystallization temperatures allowing the glass densification to take place to completion at temperatures in between, (iv) the onset of surface crystallization following soon after the completion of densification providing a crystallized network that prevents further viscous deformation.
  • the sintered glass-ceramics can be said to have a two-level microstructure, a cellular network of crystals on the scale of the prior glass particle dimensions (2-5 ⁇ m), forming the first level within which are formed discrete crystals of sub-micron to 1-2 ⁇ m size dispersed in the residual glassy phase
  • a typical microstructure is shown in FIG. 4. This unique dual microstructure is believed responsible for the high flexural strength of these sintered glass-ceramics.
  • Li 2 O or B 2 O 3 it is possible to control the form of cordierite that is formed and thus to control the thermal expansion coefficient and dielectric constant within certain limits.
  • the glass-ceramic of the ⁇ -spodumene type as well as of the cordierite type described above can be used for other applications besides the multilayer substrates. Such applications could be based on one or more of their properties such as their easy sinterability, low thermal expansion coefficients, low dielectric constant and high flexural strength. While some of these compositions cannot be bulk crystallized, other such as composition #1 of Table II can be used in this condition.
  • alpha-cordierite glass is defined as and limited to (1) a precursor for "alpha-cordierite glass ceramics”, and (2) formed from a batch consisting of, by weight
  • alpha-cordierite glass ceramic is defined as and limited to a glass ceramic structure coalesced and crystallized from “alpha-cordierite glasses” to an article having a microstructure of a pervasive network of 2 to 5 ⁇ m crystallites of alpha-cordierite and clinoenstatite within the interstices of the network occupied by residual glass having dispersed therein discrete secondary 1 to 2 ⁇ m crystallites of clinoenstatite and additional cordierite phase.
  • the glasses of the ⁇ -spodumene type and the cordierite type described previously can be used to fabricate multilayer glass-ceramic substrates containing co-sintered conductor patterns of gold, silver or copper.
  • the substrate fabrication involves the following steps:
  • the cullet of the chosen glass is ground to average particle sizes in the range of 2 to 7 ⁇ m.
  • the grinding can be done in two stages--a preliminary dry or wet grinding to--400 mesh particle size followed by further grinding with suitable organic binders and solvents until the average particle size is reduced to lie between 2 to 7 ⁇ m and a castable slurry or slip is obtained.
  • a single stage prolonged grinding of cullet in the medium of the binder and solvent until the desired particle size is obtained can also be used. In the latter case, a filtering step may be needed to remove oversized particles.
  • a suitable binder is poly-vinyl butaryl resin with a plasticizer such as dioctophthalate or dibutyl phthalate.
  • polymers are polyvinyl formal, polyvinyl chloride, polyvinyl acetate or certain acrylic resins.
  • an easily evaporable solvent such as methanol is (i) to initially dissolve the binder so as to enable it to coat the individual glass particles, and (ii) to adjust the rheology of the slip or slurry for good castability.
  • the slip or slurry prepared as in Step 1 is cast, in accordance with conventional techniques, into thin green sheets preferably by a doctor-blading technique.
  • the cast sheets are blanked to the required dimensions in a blanking tool and via holes are punched in them in the required configuration.
  • Metallizing paste of gold, silver or copper is extruded into the via holes in the individual sheets by screen printing method.
  • the required conductor patterns are screen printed onto the individual green sheets of Step 4.
  • a plurality of sheets prepared as in Step 5 are laminated together in registry in a laminating press.
  • the temperature and pressure employed for lamination should be such as to cause (i) the individual green sheets to bond to each other to yield a monolithic green substrate, (ii) to cause the green ceramic to sufficiently flow and enclose the conductor patterns.
  • the particular glass-ceramic composition chosen should be one that has an optimum sintering temperature between 50°-150° C. below the melting point of the conductor metal employed.
  • the organic binders begin to come off at 300° C. and the binder removal is essentially complete before appreciable glass-to-glass sintering has occurred.
  • the sintering proceeds according to the mechanism previously outlined and results in the conversion of glass to glass ceramic state in which the crystalline phases formed occupy greater than 80% of the body by volume.
  • the holding time at the sintering temperature can vary from 1 to 5 hours.
  • the body is then cooled at a conrolled rate not to exceed 4° C./minute to at least about 400° C. after which faster cooling rates may be used.
  • organic binders employed for green sheet fabrication should be capable of being evaporated off in such atmospheres at reasonable temperatures.

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US05/875,703 1978-02-06 1978-02-06 Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper Expired - Lifetime US4301324A (en)

Priority Applications (16)

Application Number Priority Date Filing Date Title
US05/875,703 US4301324A (en) 1978-02-06 1978-02-06 Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper
CA314,417A CA1109664A (en) 1978-02-06 1978-10-26 Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper
FR7837093A FR2416203A1 (fr) 1978-02-06 1978-12-28 Substrats verre-ceramique et leur procede de fabrication
BE192779A BE873329A (fr) 1978-02-06 1979-01-05 Substrats verre-ceramique et leur procede de fabrication
DE2901172A DE2901172C3 (de) 1978-02-06 1979-01-13 Verfahren zum Herstellen einer porenfreien Sinterglaskeramik auf der Basis SiO↓2↓-Al↓2↓O↓3↓- (MgO-CaO-BaO-B↓2↓O↓3↓) und daraus hergestelltes Substrat bzw. Laminat
AT0028979A AT377966B (de) 1978-02-06 1979-01-15 Mehrschichtiges, gesintertes glaskeramiksubstrat mit aus gold, silber oder kupfer bestehenden leitungsmustern und verfahren zu dessen herstellung
CH38779A CH645602A5 (de) 1978-02-06 1979-01-16 Verfahren zum herstellen von gegenstaenden aus glaskeramik und nach diesem verfahren hergestellte gegenstaende.
GB7901661A GB2013650B (en) 1978-02-06 1979-01-17 Glass ceramic structures
JP404879A JPS54111517A (en) 1978-02-06 1979-01-19 Nonporous glasssceramic body
SE7900880A SE444308B (sv) 1978-02-06 1979-02-01 Metod for framstellning av en porfri sinterglaskeramik samt enligt metoden framstellt alster
IT19842/79A IT1110275B (it) 1978-02-06 1979-02-02 Struttura vetro-ceramica per substrati circuitali e relativo processo di fabbricazione
ES477459A ES477459A1 (es) 1978-02-06 1979-02-05 Un metodo de producir un articulo vitroceramico.
NL7900926A NL7900926A (nl) 1978-02-06 1979-02-06 Glaskeramische constructies en gesinterde laminaten daarvan met ketenpatronen van goud, zilver of koper.
JP56058703A JPS5946900B2 (ja) 1978-02-06 1981-04-20 非多孔質ガラス−セラミツク体
CA377,129A CA1122789A (en) 1978-02-06 1981-05-07 Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper
US06/276,236 US4413061A (en) 1978-02-06 1981-06-22 Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper

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Cited By (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4385202A (en) * 1980-09-25 1983-05-24 Texas Instruments Incorporated Electronic circuit interconnection system
US4472762A (en) * 1980-09-25 1984-09-18 Texas Instruments Incorporated Electronic circuit interconnection system
US4490429A (en) * 1981-07-24 1984-12-25 Hitachi, Ltd. Process for manufacturing a multilayer circuit board
US4504340A (en) * 1983-07-26 1985-03-12 International Business Machines Corporation Material and process set for fabrication of molecular matrix print head
US4506435A (en) * 1981-07-27 1985-03-26 International Business Machines Corporation Method for forming recessed isolated regions
US4546406A (en) * 1980-09-25 1985-10-08 Texas Instruments Incorporated Electronic circuit interconnection system
US4547625A (en) * 1982-07-08 1985-10-15 Hitachi, Ltd. Glass multilayer wiring board and method for its manufacture
US4598167A (en) * 1983-07-27 1986-07-01 Hitachi, Ltd. Multilayered ceramic circuit board
US4649125A (en) * 1984-04-13 1987-03-10 Ngk Insulators, Ltd. Ceramic composition for dielectrics
US4654095A (en) * 1985-03-25 1987-03-31 E. I. Du Pont De Nemours And Company Dielectric composition
US4655864A (en) * 1985-03-25 1987-04-07 E. I. Du Pont De Nemours And Company Dielectric compositions and method of forming a multilayer interconnection using same
US4665468A (en) * 1984-07-10 1987-05-12 Nec Corporation Module having a ceramic multi-layer substrate and a multi-layer circuit thereupon, and process for manufacturing the same
US4672152A (en) * 1985-08-05 1987-06-09 Hitachi, Ltd. Multilayer ceramic circuit board
US4672739A (en) * 1985-04-11 1987-06-16 International Business Machines Corporation Method for use in brazing an interconnect pin to a metallization pattern situated on a brittle dielectric substrate
DE3701973A1 (de) * 1986-01-23 1987-07-30 Matsushita Electric Works Ltd Produkt aus gesintertem glaspulver
US4687540A (en) * 1985-12-20 1987-08-18 Olin Corporation Method of manufacturing glass capacitors and resulting product
US4696851A (en) * 1985-03-25 1987-09-29 Olin Corporation Hybrid and multi-layer circuitry
US4712161A (en) * 1985-03-25 1987-12-08 Olin Corporation Hybrid and multi-layer circuitry
US4725333A (en) * 1985-12-20 1988-02-16 Olin Corporation Metal-glass laminate and process for producing same
US4726921A (en) * 1984-06-01 1988-02-23 Narumi China Corporation Method for manufacturing low temperature fired ceramics
US4749665A (en) * 1985-10-25 1988-06-07 Narumi China Corporation Low temperature fired ceramics
US4755631A (en) * 1985-04-11 1988-07-05 International Business Machines Corporation Apparatus for providing an electrical connection to a metallic pad situated on a brittle dielectric substrate
US4764233A (en) * 1982-07-12 1988-08-16 Hitachi, Ltd. Process for producing a ceramic multi-layer circuit board
US4775503A (en) * 1985-07-16 1988-10-04 Interconnexions Ceramiques Process for the manufacture of an interconnecting substrate for electronic components
US4785827A (en) * 1987-01-28 1988-11-22 Minnesota Mining And Manufacturing Company Subcutaneous housing assembly
EP0299300A2 (en) * 1987-07-15 1989-01-18 International Business Machines Corporation Article strengthened by a compressive layer and method
US4805683A (en) * 1988-03-04 1989-02-21 International Business Machines Corporation Method for producing a plurality of layers of metallurgy
US4821151A (en) * 1985-12-20 1989-04-11 Olin Corporation Hermetically sealed package
US4840654A (en) * 1985-03-04 1989-06-20 Olin Corporation Method for making multi-layer and pin grid arrays
US4879156A (en) * 1986-05-02 1989-11-07 International Business Machines Corporation Multilayered ceramic substrate having solid non-porous metal conductors
US4906405A (en) * 1987-05-19 1990-03-06 Matsushita Electric Industrial Co., Ltd. Conductor composition and method of manufacturing a multilayered ceramic body using the composition
US4963187A (en) * 1987-03-04 1990-10-16 Ngk Spark Plug Co., Ltd. Metallizing paste for circuit board having low thermal expansion coefficient
US4971738A (en) * 1988-07-18 1990-11-20 International Business Machines Corporation Enhanced removal of carbon from ceramic substrate laminates
US5029242A (en) * 1989-05-12 1991-07-02 International Business Machines Corporation Glass-ceramic structure and method for making same
US5053361A (en) * 1988-07-18 1991-10-01 International Business Machines Corporation Setter tile for use in sintering of ceramic substrate laminates
US5070050A (en) * 1988-10-14 1991-12-03 Raychem Corporation Metal oxide dielectric dense bodies, precursor powders therefor, and methods for preparing same
US5071794A (en) * 1989-08-04 1991-12-10 Ferro Corporation Porous dielectric compositions
US5102720A (en) * 1989-09-22 1992-04-07 Cornell Research Foundation, Inc. Co-fired multilayer ceramic tapes that exhibit constrained sintering
US5122930A (en) * 1987-01-22 1992-06-16 Ngk Spark Plug Co., Ltd. High heat-conductive, thick film multi-layered circuit board
US5130280A (en) * 1988-10-14 1992-07-14 Raychem Corporation Metal oxide dielectric dense bodies, precursor powders therefor, and methods for preparing same
US5147484A (en) * 1987-10-19 1992-09-15 International Business Machines Corporation Method for producing multi-layer ceramic substrates with oxidation resistant metalization
US5164342A (en) * 1988-10-14 1992-11-17 Ferro Corporation Low dielectric, low temperature fired glass ceramics
US5167913A (en) * 1991-12-23 1992-12-01 International Business Machines Corporation Method of forming an adherent layer of metallurgy on a ceramic substrate
EP0518005A2 (en) * 1991-03-20 1992-12-16 International Business Machines Corporation Via paste compositions and use thereof to form conductive vias in circuitized ceramic substrates
US5188886A (en) * 1988-10-14 1993-02-23 Raychem Corporation Metal oxide dielectric dense bodies, precursor powders therefor, and methods for preparing same
US5194196A (en) * 1989-10-06 1993-03-16 International Business Machines Corporation Hermetic package for an electronic device and method of manufacturing same
US5215610A (en) * 1991-04-04 1993-06-01 International Business Machines Corporation Method for fabricating superconductor packages
US5232765A (en) * 1990-07-25 1993-08-03 Ngk Insulators, Ltd. Distributed constant circuit board using ceramic substrate material
US5258335A (en) * 1988-10-14 1993-11-02 Ferro Corporation Low dielectric, low temperature fired glass ceramics
US5260519A (en) * 1992-09-23 1993-11-09 International Business Machines Corporation Multilayer ceramic substrate with graded vias
US5262595A (en) * 1990-07-25 1993-11-16 Ngk Insulators, Ltd. Dielectric ceramic body including TiO2 dispersion in crystallized cordierite matrix phase, method of producing the same, and circuit board using the same
US5277937A (en) * 1992-06-03 1994-01-11 Corning Incorporated Method for controlling the conductance of a heated cellular substrate
US5293504A (en) * 1992-09-23 1994-03-08 International Business Machines Corporation Multilayer ceramic substrate with capped vias
US5302562A (en) * 1992-10-28 1994-04-12 International Business Machines Corporation Method of controlling the densification behavior of a metallic feature in a ceramic material
US5369067A (en) * 1992-02-19 1994-11-29 Chichibu Cement Co., Ltd. Composite substrates and their production
US5413842A (en) * 1992-12-29 1995-05-09 International Business Machines Corporation Green sheets of controlled microporosity and method of producing same
USRE34982E (en) * 1989-01-19 1995-06-27 David Sarnoff Research Center, Inc. Thick film copper via fill inks
US5496619A (en) * 1992-05-14 1996-03-05 Matsushita Electric Industrial Co., Ltd. Assembly formed from conductive paste and insulating paste
US5512711A (en) * 1992-12-28 1996-04-30 International Business Machines Corporation Copper-based paste containing refractory metal additions for densification control
US5514451A (en) * 1995-01-27 1996-05-07 David Sarnoff Research Center, Inc. Conductive via fill inks for ceramic multilayer circuit boards on support substrates
US5519191A (en) * 1992-10-30 1996-05-21 Corning Incorporated Fluid heater utilizing laminar heating element having conductive layer bonded to flexible ceramic foil substrate
US5530371A (en) * 1994-04-15 1996-06-25 International Business Machines Corporation Probe card assembly
US5532031A (en) * 1992-01-29 1996-07-02 International Business Machines Corporation I/O pad adhesion layer for a ceramic substrate
US5672083A (en) * 1993-06-22 1997-09-30 Candescent Technologies Corporation Fabrication of flat panel device having backplate that includes ceramic layer
US5682018A (en) * 1991-10-18 1997-10-28 International Business Machines Corporation Interface regions between metal and ceramic in a metal/ceramic substrate
US5786288A (en) * 1996-12-04 1998-07-28 National Science Council Low dielectric ceramic compositions for multilayer ceramic package
US5925443A (en) * 1991-09-10 1999-07-20 International Business Machines Corporation Copper-based paste containing copper aluminate for microstructural and shrinkage control of copper-filled vias
US6136419A (en) * 1999-05-26 2000-10-24 International Business Machines Corporation Ceramic substrate having a sealed layer
US6163957A (en) * 1998-11-13 2000-12-26 Fujitsu Limited Multilayer laminated substrates with high density interconnects and methods of making the same
US6258191B1 (en) * 1998-09-16 2001-07-10 International Business Machines Corporation Method and materials for increasing the strength of crystalline ceramic
US6270880B1 (en) * 1998-10-16 2001-08-07 Murata Manufacturing Co., Ltd. Crystalline glass composition for use in circuit board, sintered crystalline glass, insulator composition insulating paste and thick film circuit board
US6384347B2 (en) * 1999-02-19 2002-05-07 Hitachi, Ltd. Glass-ceramic wiring board
US20050266252A1 (en) * 2004-05-27 2005-12-01 Delaware Capital Formation, Inc. Low loss glass-ceramic materials, method of making same and electronic packages including same
US20050266251A1 (en) * 2004-05-27 2005-12-01 Delaware Capital Formation, Inc. Glass-ceramic materials and electronic packages including same
EP1699277A1 (en) * 2003-12-26 2006-09-06 Murata Manufacturing Co., Ltd. Ceramic multilayer substrate
EP2084117A2 (en) * 2006-09-29 2009-08-05 Ceramext, LLC Process and apparatus for hot-forging synthetic ceramic
US20090227063A1 (en) * 2008-03-08 2009-09-10 Crystal Solar, Inc. Integrated method and system for manufacturing monolithic panels of crystalline solar cells
US20100117113A1 (en) * 2008-11-10 2010-05-13 Foxsemicon Integrated Technology, Inc. Light emitting diode and light source module having same
US20100119917A1 (en) * 2008-11-12 2010-05-13 Bloom Energy Corporation Seal compositions, methods, and structures for planar solid oxide fuel cells
US20110186117A1 (en) * 2008-03-08 2011-08-04 Kumar Ananda H Thin film solar cell with ceramic handling layer
US8968509B2 (en) 2013-05-09 2015-03-03 Bloom Energy Corporation Methods and devices for printing seals for fuel cell stacks
US9440877B2 (en) 2010-11-30 2016-09-13 Corning Incorporated Fusion formed and ion exchanged glass-ceramics
US10087103B2 (en) 2008-11-12 2018-10-02 Bloom Energy Corporation Seal compositions, methods, and structures for planar solid oxide fuel cells
CN111615502A (zh) * 2017-11-30 2020-09-01 康宁股份有限公司 具有优化的颜色包装的黑色β-锂辉石玻璃陶瓷

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4221047A (en) * 1979-03-23 1980-09-09 International Business Machines Corporation Multilayered glass-ceramic substrate for mounting of semiconductor device
US4340436A (en) * 1980-07-14 1982-07-20 International Business Machines Corporation Process for flattening glass-ceramic substrates
EP0074605B1 (en) * 1981-09-11 1990-08-29 Kabushiki Kaisha Toshiba Method for manufacturing multilayer circuit substrate
JPS5983957A (ja) * 1982-10-30 1984-05-15 Ngk Spark Plug Co Ltd 結晶化ガラス体
JPS5992943A (ja) * 1982-11-15 1984-05-29 Ngk Spark Plug Co Ltd 結晶化ガラス体
US4540621A (en) * 1983-07-29 1985-09-10 Eggerding Carl L Dielectric substrates comprising cordierite and method of forming the same
JPS60254697A (ja) * 1984-05-31 1985-12-16 富士通株式会社 多層セラミック回路基板および製法
GB2172282B (en) * 1985-03-11 1988-10-05 English Electric Co Ltd Toughened glass-ceramics
JPS6247196A (ja) * 1985-08-26 1987-02-28 松下電器産業株式会社 セラミツク多層基板
US4731699A (en) * 1985-10-08 1988-03-15 Nec Corporation Mounting structure for a chip
JPH0617249B2 (ja) * 1986-08-15 1994-03-09 松下電工株式会社 ガラスセラミツク焼結体
JPH0617250B2 (ja) * 1986-09-19 1994-03-09 松下電工株式会社 ガラスセラミツク焼結体
US4687749A (en) * 1986-10-24 1987-08-18 Corning Glass Works Refractory glass-ceramics containing enstatite
US4965229A (en) * 1988-02-05 1990-10-23 Matsushita Electric Industrial Co., Ltd. Glass ceramic for coating metal substrate
JPH01273337A (ja) * 1988-04-25 1989-11-01 Kyocera Corp 半導体素子収納用パッケージ
JP2610487B2 (ja) * 1988-06-10 1997-05-14 株式会社日立製作所 セラミック積層回路基板
JP2736454B2 (ja) * 1989-11-27 1998-04-02 京セラ株式会社 半導体素子収納用パッケージ
JP2747613B2 (ja) * 1989-11-27 1998-05-06 京セラ株式会社 半導体素子収納用パッケージ
JP2736462B2 (ja) * 1989-11-30 1998-04-02 京セラ株式会社 半導体素子収納用パッケージ
JP2736453B2 (ja) * 1989-11-27 1998-04-02 京セラ株式会社 半導体素子収納用パッケージ
JP2736463B2 (ja) * 1989-11-30 1998-04-02 京セラ株式会社 半導体素子収納用パッケージ
KR101121798B1 (ko) * 2004-08-18 2012-03-20 코닝 인코포레이티드 고 변형 유리/유리-세라믹 함유 반도체-온-절연체 구조물
US11236012B2 (en) 2018-03-28 2022-02-01 Corning Incorporated Boron phosphate glass-ceramics with low dielectric loss
WO2020023205A1 (en) 2018-07-23 2020-01-30 Corning Incorporated Magnesium aluminosilicate glass ceramics

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2920971A (en) * 1956-06-04 1960-01-12 Corning Glass Works Method of making ceramics and product thereof
US2971853A (en) * 1953-03-05 1961-02-14 Corning Glass Works Ceramic body and method of making it
CA651228A (en) * 1962-10-30 Corning Glass Works Low-expansion glass-ceramic and method of making it
US3161528A (en) * 1962-10-03 1964-12-15 Corning Glass Works Semicrystalline ceramic body and method of making it
US3170805A (en) * 1960-02-29 1965-02-23 English Electric Co Ltd Ceramics and their production
US3423517A (en) * 1966-07-27 1969-01-21 Dielectric Systems Inc Monolithic ceramic electrical interconnecting structure
US3450546A (en) * 1966-05-26 1969-06-17 Corning Glass Works Transparent glass-ceramic articles and method for producing
US3486872A (en) * 1966-11-15 1969-12-30 Owens Illinois Inc Method for producing a crystallized sintered glass article with a nonporous surface
US3629668A (en) * 1969-12-19 1971-12-21 Texas Instruments Inc Semiconductor device package having improved compatibility properties
GB1262194A (en) 1968-05-31 1972-02-02 Corning Glass Works Low expansion devitrifying glass frit
US3723176A (en) * 1969-06-19 1973-03-27 American Lava Corp Alumina palladium composite
US3732116A (en) * 1970-10-21 1973-05-08 Corning Glass Works Glass-ceramic articles containing strontia-,yttria-,lanthana-,and/or tantala-bearing crystal species
US3825468A (en) * 1969-07-25 1974-07-23 Owens Illinois Inc Sintered ceramic
US4126477A (en) * 1977-05-06 1978-11-21 Corning Glass Works Beta-spodumene glass-ceramics exhibiting excellent dimensional stability

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1010513A (en) * 1962-02-02 1965-11-17 Fuji Photo Film Co Ltd Improvements in or relating to crystalline glass and to methods of making the same
DE1496611B1 (de) * 1964-07-31 1972-02-03 Owens Illinois Inc Durchsichtige glaskeramik mit niedrigem waermeausdehnungs koeffizienten verfahren zur herstellung eines aus ihr be stehenden gegenstanes ihre verwendung in teleskopspiegeln sowie thermisch kristallisierbares gla
GB1114556A (en) * 1965-11-26 1968-05-22 Corning Glass Works Ceramic article and method of making it
US3490984A (en) * 1965-12-30 1970-01-20 Owens Illinois Inc Art of producing high-strength surface-crystallized,glass bodies
BE756235A (fr) * 1969-09-16 1971-03-16 Corning Glass Works Ciments en ceramique de verre
DE2263234C3 (de) * 1972-12-23 1975-07-10 Jenaer Glaswerk Schott & Gen., 6500 Mainz Verfahren zur Herstellung von hochfesten und temperaturwechselbeständigen Glasgegenständen durch Oberflächenkristallisation unter Ausnutzung eines lonenaustausches innerhalb des Glases
US4015048A (en) * 1975-03-03 1977-03-29 Corning Glass Works Ceramic articles having cordierite coatings

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA651228A (en) * 1962-10-30 Corning Glass Works Low-expansion glass-ceramic and method of making it
US2971853A (en) * 1953-03-05 1961-02-14 Corning Glass Works Ceramic body and method of making it
US2920971A (en) * 1956-06-04 1960-01-12 Corning Glass Works Method of making ceramics and product thereof
US3170805A (en) * 1960-02-29 1965-02-23 English Electric Co Ltd Ceramics and their production
US3161528A (en) * 1962-10-03 1964-12-15 Corning Glass Works Semicrystalline ceramic body and method of making it
US3450546A (en) * 1966-05-26 1969-06-17 Corning Glass Works Transparent glass-ceramic articles and method for producing
US3423517A (en) * 1966-07-27 1969-01-21 Dielectric Systems Inc Monolithic ceramic electrical interconnecting structure
US3486872A (en) * 1966-11-15 1969-12-30 Owens Illinois Inc Method for producing a crystallized sintered glass article with a nonporous surface
GB1262194A (en) 1968-05-31 1972-02-02 Corning Glass Works Low expansion devitrifying glass frit
US3723176A (en) * 1969-06-19 1973-03-27 American Lava Corp Alumina palladium composite
US3825468A (en) * 1969-07-25 1974-07-23 Owens Illinois Inc Sintered ceramic
US3629668A (en) * 1969-12-19 1971-12-21 Texas Instruments Inc Semiconductor device package having improved compatibility properties
US3732116A (en) * 1970-10-21 1973-05-08 Corning Glass Works Glass-ceramic articles containing strontia-,yttria-,lanthana-,and/or tantala-bearing crystal species
US4126477A (en) * 1977-05-06 1978-11-21 Corning Glass Works Beta-spodumene glass-ceramics exhibiting excellent dimensional stability

Cited By (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4472762A (en) * 1980-09-25 1984-09-18 Texas Instruments Incorporated Electronic circuit interconnection system
US4385202A (en) * 1980-09-25 1983-05-24 Texas Instruments Incorporated Electronic circuit interconnection system
US4546406A (en) * 1980-09-25 1985-10-08 Texas Instruments Incorporated Electronic circuit interconnection system
US4490429A (en) * 1981-07-24 1984-12-25 Hitachi, Ltd. Process for manufacturing a multilayer circuit board
US4506435A (en) * 1981-07-27 1985-03-26 International Business Machines Corporation Method for forming recessed isolated regions
US4547625A (en) * 1982-07-08 1985-10-15 Hitachi, Ltd. Glass multilayer wiring board and method for its manufacture
US4764233A (en) * 1982-07-12 1988-08-16 Hitachi, Ltd. Process for producing a ceramic multi-layer circuit board
US4504340A (en) * 1983-07-26 1985-03-12 International Business Machines Corporation Material and process set for fabrication of molecular matrix print head
US4598167A (en) * 1983-07-27 1986-07-01 Hitachi, Ltd. Multilayered ceramic circuit board
US4649125A (en) * 1984-04-13 1987-03-10 Ngk Insulators, Ltd. Ceramic composition for dielectrics
US4726921A (en) * 1984-06-01 1988-02-23 Narumi China Corporation Method for manufacturing low temperature fired ceramics
US4736521A (en) * 1984-07-10 1988-04-12 Nec Corporation Process for manufacturing a ceramic multi-layer substrate
US4665468A (en) * 1984-07-10 1987-05-12 Nec Corporation Module having a ceramic multi-layer substrate and a multi-layer circuit thereupon, and process for manufacturing the same
US4840654A (en) * 1985-03-04 1989-06-20 Olin Corporation Method for making multi-layer and pin grid arrays
US4696851A (en) * 1985-03-25 1987-09-29 Olin Corporation Hybrid and multi-layer circuitry
US4712161A (en) * 1985-03-25 1987-12-08 Olin Corporation Hybrid and multi-layer circuitry
US4655864A (en) * 1985-03-25 1987-04-07 E. I. Du Pont De Nemours And Company Dielectric compositions and method of forming a multilayer interconnection using same
US4654095A (en) * 1985-03-25 1987-03-31 E. I. Du Pont De Nemours And Company Dielectric composition
US4672739A (en) * 1985-04-11 1987-06-16 International Business Machines Corporation Method for use in brazing an interconnect pin to a metallization pattern situated on a brittle dielectric substrate
US4755631A (en) * 1985-04-11 1988-07-05 International Business Machines Corporation Apparatus for providing an electrical connection to a metallic pad situated on a brittle dielectric substrate
US4775503A (en) * 1985-07-16 1988-10-04 Interconnexions Ceramiques Process for the manufacture of an interconnecting substrate for electronic components
US4672152A (en) * 1985-08-05 1987-06-09 Hitachi, Ltd. Multilayer ceramic circuit board
US4749665A (en) * 1985-10-25 1988-06-07 Narumi China Corporation Low temperature fired ceramics
US4821151A (en) * 1985-12-20 1989-04-11 Olin Corporation Hermetically sealed package
US4725333A (en) * 1985-12-20 1988-02-16 Olin Corporation Metal-glass laminate and process for producing same
US4687540A (en) * 1985-12-20 1987-08-18 Olin Corporation Method of manufacturing glass capacitors and resulting product
US4764486A (en) * 1986-01-23 1988-08-16 Matsushita Electric Works, Ltd. Sintered glass-powder product
DE3701973A1 (de) * 1986-01-23 1987-07-30 Matsushita Electric Works Ltd Produkt aus gesintertem glaspulver
US4879156A (en) * 1986-05-02 1989-11-07 International Business Machines Corporation Multilayered ceramic substrate having solid non-porous metal conductors
US5122930A (en) * 1987-01-22 1992-06-16 Ngk Spark Plug Co., Ltd. High heat-conductive, thick film multi-layered circuit board
US4785827A (en) * 1987-01-28 1988-11-22 Minnesota Mining And Manufacturing Company Subcutaneous housing assembly
US4963187A (en) * 1987-03-04 1990-10-16 Ngk Spark Plug Co., Ltd. Metallizing paste for circuit board having low thermal expansion coefficient
US4906405A (en) * 1987-05-19 1990-03-06 Matsushita Electric Industrial Co., Ltd. Conductor composition and method of manufacturing a multilayered ceramic body using the composition
EP0299300A3 (en) * 1987-07-15 1989-10-18 International Business Machines Corporation Article strengthened by a compressive layer and method
EP0299300A2 (en) * 1987-07-15 1989-01-18 International Business Machines Corporation Article strengthened by a compressive layer and method
US5147484A (en) * 1987-10-19 1992-09-15 International Business Machines Corporation Method for producing multi-layer ceramic substrates with oxidation resistant metalization
US4805683A (en) * 1988-03-04 1989-02-21 International Business Machines Corporation Method for producing a plurality of layers of metallurgy
US4971738A (en) * 1988-07-18 1990-11-20 International Business Machines Corporation Enhanced removal of carbon from ceramic substrate laminates
US5053361A (en) * 1988-07-18 1991-10-01 International Business Machines Corporation Setter tile for use in sintering of ceramic substrate laminates
US5130280A (en) * 1988-10-14 1992-07-14 Raychem Corporation Metal oxide dielectric dense bodies, precursor powders therefor, and methods for preparing same
US5188886A (en) * 1988-10-14 1993-02-23 Raychem Corporation Metal oxide dielectric dense bodies, precursor powders therefor, and methods for preparing same
US5258335A (en) * 1988-10-14 1993-11-02 Ferro Corporation Low dielectric, low temperature fired glass ceramics
US5070050A (en) * 1988-10-14 1991-12-03 Raychem Corporation Metal oxide dielectric dense bodies, precursor powders therefor, and methods for preparing same
US5164342A (en) * 1988-10-14 1992-11-17 Ferro Corporation Low dielectric, low temperature fired glass ceramics
USRE34982E (en) * 1989-01-19 1995-06-27 David Sarnoff Research Center, Inc. Thick film copper via fill inks
US5029242A (en) * 1989-05-12 1991-07-02 International Business Machines Corporation Glass-ceramic structure and method for making same
US5071794A (en) * 1989-08-04 1991-12-10 Ferro Corporation Porous dielectric compositions
US5102720A (en) * 1989-09-22 1992-04-07 Cornell Research Foundation, Inc. Co-fired multilayer ceramic tapes that exhibit constrained sintering
US5194196A (en) * 1989-10-06 1993-03-16 International Business Machines Corporation Hermetic package for an electronic device and method of manufacturing same
US5262595A (en) * 1990-07-25 1993-11-16 Ngk Insulators, Ltd. Dielectric ceramic body including TiO2 dispersion in crystallized cordierite matrix phase, method of producing the same, and circuit board using the same
US5232765A (en) * 1990-07-25 1993-08-03 Ngk Insulators, Ltd. Distributed constant circuit board using ceramic substrate material
EP0518005A2 (en) * 1991-03-20 1992-12-16 International Business Machines Corporation Via paste compositions and use thereof to form conductive vias in circuitized ceramic substrates
EP0518005A3 (en) * 1991-03-20 1993-02-03 International Business Machines Corporation Via paste compositions and use thereof to form conductive vias in circuitized ceramic substrates
US5283104A (en) * 1991-03-20 1994-02-01 International Business Machines Corporation Via paste compositions and use thereof to form conductive vias in circuitized ceramic substrates
US5215610A (en) * 1991-04-04 1993-06-01 International Business Machines Corporation Method for fabricating superconductor packages
US6358439B1 (en) 1991-09-10 2002-03-19 International Business Machines Corporation Copper-based paste containing copper aluminate for microstructural and shrinkage control of copper-filled vias
US6124041A (en) * 1991-09-10 2000-09-26 International Business Machines Corporation Copper-based paste containing copper aluminate for microstructural and shrinkage control of copper-filled vias
US5925443A (en) * 1991-09-10 1999-07-20 International Business Machines Corporation Copper-based paste containing copper aluminate for microstructural and shrinkage control of copper-filled vias
US5682018A (en) * 1991-10-18 1997-10-28 International Business Machines Corporation Interface regions between metal and ceramic in a metal/ceramic substrate
US5167913A (en) * 1991-12-23 1992-12-01 International Business Machines Corporation Method of forming an adherent layer of metallurgy on a ceramic substrate
US5532031A (en) * 1992-01-29 1996-07-02 International Business Machines Corporation I/O pad adhesion layer for a ceramic substrate
US5369067A (en) * 1992-02-19 1994-11-29 Chichibu Cement Co., Ltd. Composite substrates and their production
US5496619A (en) * 1992-05-14 1996-03-05 Matsushita Electric Industrial Co., Ltd. Assembly formed from conductive paste and insulating paste
US5277937A (en) * 1992-06-03 1994-01-11 Corning Incorporated Method for controlling the conductance of a heated cellular substrate
US5260519A (en) * 1992-09-23 1993-11-09 International Business Machines Corporation Multilayer ceramic substrate with graded vias
US5293504A (en) * 1992-09-23 1994-03-08 International Business Machines Corporation Multilayer ceramic substrate with capped vias
US5302562A (en) * 1992-10-28 1994-04-12 International Business Machines Corporation Method of controlling the densification behavior of a metallic feature in a ceramic material
US5519191A (en) * 1992-10-30 1996-05-21 Corning Incorporated Fluid heater utilizing laminar heating element having conductive layer bonded to flexible ceramic foil substrate
US5525761A (en) * 1992-12-28 1996-06-11 International Business Machines Corporation Copper-based paste containing refractory metal additions for densification control
US5512711A (en) * 1992-12-28 1996-04-30 International Business Machines Corporation Copper-based paste containing refractory metal additions for densification control
US5413842A (en) * 1992-12-29 1995-05-09 International Business Machines Corporation Green sheets of controlled microporosity and method of producing same
US5686790A (en) * 1993-06-22 1997-11-11 Candescent Technologies Corporation Flat panel device with ceramic backplate
US5672083A (en) * 1993-06-22 1997-09-30 Candescent Technologies Corporation Fabrication of flat panel device having backplate that includes ceramic layer
US5530371A (en) * 1994-04-15 1996-06-25 International Business Machines Corporation Probe card assembly
US5629631A (en) * 1994-04-15 1997-05-13 International Business Machines Corporation Interface card for a probe card assembly
US5546012A (en) * 1994-04-15 1996-08-13 International Business Machines Corporation Probe card assembly having a ceramic probe card
US5514451A (en) * 1995-01-27 1996-05-07 David Sarnoff Research Center, Inc. Conductive via fill inks for ceramic multilayer circuit boards on support substrates
US5786288A (en) * 1996-12-04 1998-07-28 National Science Council Low dielectric ceramic compositions for multilayer ceramic package
US6258191B1 (en) * 1998-09-16 2001-07-10 International Business Machines Corporation Method and materials for increasing the strength of crystalline ceramic
US6270880B1 (en) * 1998-10-16 2001-08-07 Murata Manufacturing Co., Ltd. Crystalline glass composition for use in circuit board, sintered crystalline glass, insulator composition insulating paste and thick film circuit board
US6163957A (en) * 1998-11-13 2000-12-26 Fujitsu Limited Multilayer laminated substrates with high density interconnects and methods of making the same
US6384347B2 (en) * 1999-02-19 2002-05-07 Hitachi, Ltd. Glass-ceramic wiring board
US6658733B2 (en) 1999-02-19 2003-12-09 Hitachi, Ltd. Method of manufacturing via interconnection of glass-ceramic wiring board
US6136419A (en) * 1999-05-26 2000-10-24 International Business Machines Corporation Ceramic substrate having a sealed layer
EP1699277A1 (en) * 2003-12-26 2006-09-06 Murata Manufacturing Co., Ltd. Ceramic multilayer substrate
EP1699277A4 (en) * 2003-12-26 2007-08-15 Murata Manufacturing Co CERAMIC MULTILAYER SUBSTRATE
US20050266252A1 (en) * 2004-05-27 2005-12-01 Delaware Capital Formation, Inc. Low loss glass-ceramic materials, method of making same and electronic packages including same
US7186461B2 (en) 2004-05-27 2007-03-06 Delaware Capital Formation, Inc. Glass-ceramic materials and electronic packages including same
US7387838B2 (en) 2004-05-27 2008-06-17 Delaware Capital Formation, Inc. Low loss glass-ceramic materials, method of making same and electronic packages including same
US20050266251A1 (en) * 2004-05-27 2005-12-01 Delaware Capital Formation, Inc. Glass-ceramic materials and electronic packages including same
US20080245467A1 (en) * 2004-07-06 2008-10-09 Delaware Capital Formation, Inc. Low loss glass-ceramic materials, method of making same and electronic packages including same
EP2084117A4 (en) * 2006-09-29 2011-08-03 Ceramext Llc METHOD AND DEVICE FOR HOT FORGING SYNTHETIC CERAMIC
EP2084117A2 (en) * 2006-09-29 2009-08-05 Ceramext, LLC Process and apparatus for hot-forging synthetic ceramic
US9102569B2 (en) 2006-09-29 2015-08-11 Ceramext, Llc Process for hot-forging synthetic ceramic
US8030119B2 (en) 2008-03-08 2011-10-04 Crystal Solar, Inc. Integrated method and system for manufacturing monolithic panels of crystalline solar cells
US20110186117A1 (en) * 2008-03-08 2011-08-04 Kumar Ananda H Thin film solar cell with ceramic handling layer
US8481357B2 (en) 2008-03-08 2013-07-09 Crystal Solar Incorporated Thin film solar cell with ceramic handling layer
US8900399B2 (en) 2008-03-08 2014-12-02 Crystal Solar, Inc. Integrated method and system for manufacturing monolithic panels of crystalline solar cells
US20090227063A1 (en) * 2008-03-08 2009-09-10 Crystal Solar, Inc. Integrated method and system for manufacturing monolithic panels of crystalline solar cells
US20100117113A1 (en) * 2008-11-10 2010-05-13 Foxsemicon Integrated Technology, Inc. Light emitting diode and light source module having same
US10087103B2 (en) 2008-11-12 2018-10-02 Bloom Energy Corporation Seal compositions, methods, and structures for planar solid oxide fuel cells
US8691470B2 (en) 2008-11-12 2014-04-08 Bloom Energy Corporation Seal compositions, methods, and structures for planar solid oxide fuel cells
US10669188B2 (en) 2008-11-12 2020-06-02 Bloom Energy Corporation Seal compositions, methods, and structures for planar solid oxide fuel cells
US9252434B2 (en) 2008-11-12 2016-02-02 Bloom Energy Corporation Seal compositions, methods, and structures for planar solid oxide fuel cells
US20100119917A1 (en) * 2008-11-12 2010-05-13 Bloom Energy Corporation Seal compositions, methods, and structures for planar solid oxide fuel cells
US9440877B2 (en) 2010-11-30 2016-09-13 Corning Incorporated Fusion formed and ion exchanged glass-ceramics
US9850163B2 (en) 2010-11-30 2017-12-26 Corning Incorporated Fusion formed and ion exchanged glass-ceramics
US8968509B2 (en) 2013-05-09 2015-03-03 Bloom Energy Corporation Methods and devices for printing seals for fuel cell stacks
CN111615502A (zh) * 2017-11-30 2020-09-01 康宁股份有限公司 具有优化的颜色包装的黑色β-锂辉石玻璃陶瓷
CN111615502B (zh) * 2017-11-30 2022-10-14 康宁股份有限公司 具有优化的颜色包装的黑色β-锂辉石玻璃陶瓷

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DE2901172B2 (de) 1981-05-07
JPS54111517A (en) 1979-08-31
IT1110275B (it) 1985-12-23
IT7919842A0 (it) 1979-02-02
CH645602A5 (de) 1984-10-15
JPS5742577B2 (xx) 1982-09-09
AT377966B (de) 1985-05-28
FR2416203A1 (fr) 1979-08-31
CA1109664A (en) 1981-09-29
JPS5946900B2 (ja) 1984-11-15
ATA28979A (de) 1984-10-15
SE7900880L (sv) 1979-08-07
FR2416203B1 (xx) 1983-04-15
ES477459A1 (es) 1979-10-16
DE2901172C3 (de) 1982-03-25
NL7900926A (nl) 1979-08-08
DE2901172A1 (de) 1979-08-16
JPS5711847A (en) 1982-01-21
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BE873329A (fr) 1979-05-02
GB2013650A (en) 1979-08-15

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