US3793984A - Apparatus for the production of closed end tubes of semiconductor material - Google Patents
Apparatus for the production of closed end tubes of semiconductor material Download PDFInfo
- Publication number
- US3793984A US3793984A US00306011A US3793984DA US3793984A US 3793984 A US3793984 A US 3793984A US 00306011 A US00306011 A US 00306011A US 3793984D A US3793984D A US 3793984DA US 3793984 A US3793984 A US 3793984A
- Authority
- US
- United States
- Prior art keywords
- cap member
- tube
- semiconductor material
- receiver body
- electrically conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/073—Hollow body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
Definitions
- ABSTRACT An apparatus for producing semiconductor tubes by means of dep ositing semiconductor maie'fi'affiafifa gaseous atmosphere onto a heated receiver body, the receiver body consists of a concentric assembly of inner and outer conductive members connected at one end by means of cooperating screw threads on the two members, and a conical end cap member covering the end of the assembly and forming a smooth continuous surface with the exterior of the outer member.
- the Dietze application describes several varieties of cap member, however, all of the cap members of the Dietze application form, with the tube member, a right circular cylinder, having an end surface normal to the axis of the receiver body. It has been found that heating of the receiver body is not uniform over its entire surface with such an arrangement, with the result that the deposited semiconductor material hasa non-uniform thickness. Accordingly, it is desirable to provide a receiver body in which the heating of the receiver body is uniform.
- Another object of the present invention is to provide such a cap structure in which grinding of the receiver body after assembly to obtain a smooth, continuous surface between the cap member and the exterior of the tube can be reduced to a minimum.
- a further object of the present invention is to provide a receiver body which has great mechanical stability.
- an end cap for closing the end surface of an axially symmetric receiver body, having a convex, conical end surface coaxial with the axis of the receiver body, the edges of said convex end surface being rounded to form a smooth, continuous surface between the cap member and the exterior of the receiver body.
- the body includes a central rod 10 and an outer tube 11 which surrounds the rod 10.
- the tube 11 has an inwardly extending flange at its end, and the rod 10 and the tube 11 are interconnected by means of cooperating threads 12 disposed on the end of the rod 11, and on the inner surface of the inwardly extending flange.
- the area of contact between the rod 10 and the tube 11 may be varied by relative rotation between the rod 10 and the tube 11.
- a central bore 14 is provided in the end of the rod 10, and the stem of a cap member 13 is disposed in the bore and threadably connected therewith.
- One set of the threads is provided on the external surface of the stem of the cap member 13, and a set of cooperating threads is provided within the bore 14.
- the inner surface of the cap member 13 lies closely adjacent the upper end of the tube 11, and the outer surface is convexly conical in shape, being thickest near the center 15 and thinest near the peripheral edge 16.
- the conical outer surface facilitates uniform temperature distribution throughout the receiver body, and enhances the deposition of a uniform thickness of semiconducting material thereon.
- it provides a cap structure of greater mechanical stability, as compared with a thin flat cap structure. Because the outer edge 16 is thin, very little material is removed during grinding the outer edge to produce the desired smooth, continuous surface of the completed receiver body.
- the cap 13 is made of the same material as the rod 10 and the tube 11, in order to enhance uniform heating over the entire surface of the receiver body.
- the material is vitreous carbon, spectral carbon, or pyrolytic graphite.
- a vacuum deposition chamber including a gaseous supply of such semiconductor material and electrical means to heat and mount a heated receiver body upon which said semiconductor material is deposited
- said receiver body comprises a central rod formed of electrically conductive material a surrounding tube formed of electrically conductive material, and having an end in electrical contact with an end of said tube; and an electrically conductive cap member for covering said end of said tube, said cap member having a convex outer surface including a curved edge na] dimension of said tube, and said cap member has an annular inner surface adapted to lie closely adjacent the end surface of said tube.
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
An apparatus for producing semiconductor tubes by means of depositing semiconductor material from a gaseous atmosphere onto a heated receiver body, the receiver body consists of a concentric assembly of inner and outer conductive members connected at one end by means of cooperating screw threads on the two members, and a conical end cap member covering the end of the assembly and forming a smooth continuous surface with the exterior of the outer member.
Description
United States Patent [191 Kasper et a1.
[ 1 Feb. 26, 1974 APPARATUS FOR THE PRODUCTION OF CLOSED END TUBES OF SEMICONDUCTOR MATERIAL Inventors: Andreas Kasper,
Garching-I-Iochbrueck; Wolfgang Dietze, Munich, both of Germany Siemens Aktiengesellschaft, Berlin and Munich, Germany Filed: Nov. 13, 1972 Appl. No.2 306,011
Assignee:
Foreign Application Priority Data Nov. 24, 1971 Germany 2158257 US. Cl 118/48, 219/275, 264/81, 338/217 Int. Cl. C23c 13/08 Field of Search 1 18/48-49.5; 117/106l07.2; 264/81; 425/447; 219/271, 275; 338/217, 218
References Cited UNITED STATES PATENTS 2/1942 I-lanawalt et al. 219/275 UX 2,355,343 8/1944 Von Zeerleder et al..... 219/275 UX 2,858,403 10/1958 Butler, Jr. 219/275 UX 2,955,566 10/1960 Campbell et al.... 118/48 3,139,363 6/1964 Baldrey 264/81 3,451,772 6/1969 McCabe et a1. 264/81 3,717,439 2/1973 Sakai 338/217 X FOREIGN PATENTS OR APPLICATIONS 450,959 7/1936 Great Britain 219/355 364,700 11/1938 Italy 338/217 Primary ExaminerMorris Kaplan Attorney, Agent, or FirmI-Ii1l, Sherman, Meroni, Gross & Simpson [5 7] ABSTRACT An apparatus for producing semiconductor tubes by means of dep ositing semiconductor maie'fi'affiafifa gaseous atmosphere onto a heated receiver body, the receiver body consists of a concentric assembly of inner and outer conductive members connected at one end by means of cooperating screw threads on the two members, and a conical end cap member covering the end of the assembly and forming a smooth continuous surface with the exterior of the outer member.
5 Claims, 1 Drawing Figure APPARATUS FOR THE PRODUCTION OF CLOSED END TUBES OF SEMICONDUCTOR MATERIAL BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to apparatus used in the production of closed end tubes made of semiconductor material by depositing semiconductor material from a gaseous atmosphere onto a receiver body, and more particularly to an improved structure for such a re ceiver body.
2. The Prior Art Apparatus used in the production of closed end tubes by depositing the material from a gaseous atmosphere has been described in co-pending application Ser. No. 253,629 filed on May 15, 1972, now U.S. Pat. No. 3,747,559 by Wolfgang Dietze for Apparatus for Production of a Closed Tube of Semiconductor Material. As described in the Dietze application, a receiver body is provided to receive a coating of the semiconductor material. The receiver body is made up of a rod and a concentric surrounding tube, the tube and rod being interconnected at one end by means of cooperating screw threads or the like. Electrical current is passed through the rod and tube to heat them to the proper temperature, and the resistance of the circuit is adjusted by modifying the distance which the rod is screwed into the tube, which determines the contact area. The end of the tube is covered by a cap member. The Dietze application describes several varieties of cap member, however, all of the cap members of the Dietze application form, with the tube member, a right circular cylinder, having an end surface normal to the axis of the receiver body. It has been found that heating of the receiver body is not uniform over its entire surface with such an arrangement, with the result that the deposited semiconductor material hasa non-uniform thickness. Accordingly, it is desirable to provide a receiver body in which the heating of the receiver body is uniform.
SUMMARY OF THE INVENTION It is a principal object of the present invention to provide a cap structure for a heated receiver body adapted for receiving a deposited layer of semiconducting material, which provides for uniformity in heating over the entire surface of the body.
Another object of the present invention is to provide such a cap structure in which grinding of the receiver body after assembly to obtain a smooth, continuous surface between the cap member and the exterior of the tube can be reduced to a minimum.
A further object of the present invention is to provide a receiver body which has great mechanical stability.
These and other objects and advantages of the present invention will become manifest upon an inspection of the following description and the accompanying drawings.
In one embodiment of the present invention there is provided an end cap, for closing the end surface of an axially symmetric receiver body, having a convex, conical end surface coaxial with the axis of the receiver body, the edges of said convex end surface being rounded to form a smooth, continuous surface between the cap member and the exterior of the receiver body.
BRIEF DESCRIPTION OF THE DRAWINGS Reference will be made to the accompanying drawing which is a vertical cross-section through a receiver body incorporating an illustrative embodiment of the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENT Referring now to the drawing, an axially symmetric receiver body is illustrated, the plane of the crosssection of the drawing passing through the axis of the body. The body includes a central rod 10 and an outer tube 11 which surrounds the rod 10. The tube 11 has an inwardly extending flange at its end, and the rod 10 and the tube 11 are interconnected by means of cooperating threads 12 disposed on the end of the rod 11, and on the inner surface of the inwardly extending flange. The area of contact between the rod 10 and the tube 11 may be varied by relative rotation between the rod 10 and the tube 11.
A central bore 14 is provided in the end of the rod 10, and the stem of a cap member 13 is disposed in the bore and threadably connected therewith. One set of the threads is provided on the external surface of the stem of the cap member 13, and a set of cooperating threads is provided within the bore 14.
The inner surface of the cap member 13 lies closely adjacent the upper end of the tube 11, and the outer surface is convexly conical in shape, being thickest near the center 15 and thinest near the peripheral edge 16. After the cap is assembled in cooperation with the rod 10 and the tube 1 l, the sharp corner formed at the outer edge 16 of the cap 13 is removed by grinding, forming the shape indicated by the dashed lines 17, and producing thereby a smooth continuous surface betweenthe conical surface of the cap 13 and the circular cylindrical outer surface of the tube 11.
It has been found that the provision of the conical outer surface facilitates uniform temperature distribution throughout the receiver body, and enhances the deposition of a uniform thickness of semiconducting material thereon. In addition it provides a cap structure of greater mechanical stability, as compared with a thin flat cap structure. Because the outer edge 16 is thin, very little material is removed during grinding the outer edge to produce the desired smooth, continuous surface of the completed receiver body.
The cap 13 is made of the same material as the rod 10 and the tube 11, in order to enhance uniform heating over the entire surface of the receiver body. Preferably, the material is vitreous carbon, spectral carbon, or pyrolytic graphite.
We claim as our invention:
1. In an apparatus for producing closed end tubes of semiconductor material wherein is provided a vacuum deposition chamber including a gaseous supply of such semiconductor material and electrical means to heat and mount a heated receiver body upon which said semiconductor material is deposited, the improvement wherein said receiver body comprises a central rod formed of electrically conductive material a surrounding tube formed of electrically conductive material, and having an end in electrical contact with an end of said tube; and an electrically conductive cap member for covering said end of said tube, said cap member having a convex outer surface including a curved edge na] dimension of said tube, and said cap member has an annular inner surface adapted to lie closely adjacent the end surface of said tube.
5. The cap member of claim 1, wherein said central rod is provided with a central threaded bore, and said cap member has a stem threadably received in said bore.
Claims (5)
1. In an apparatus for producing closed end tubes of semiconductor material wherein is provided a vacuum deposition chamber including a gaseous supply of such semiconductor material and electrical means to heat and mount a heated receiver body upon which said semiconductor material is deposited, the improvement wherein said receiver body comprises a central rod formed of electrically conductive material a surrounding tube formed of electrically conductive material, and having an end in electrical contact with an end of said tube; and an electrically conductive cap member for covering said end of said tube, said cap member having a convex outer surface including a curved edge surface which, at the outer extremity of said surface, forms a smooth, continuous surface with the exterior of said tube.
2. The cap member of claim 1, wherein the outer surface of said cap member is axially symmetric.
3. The cap member of claim 1, wherein the outer surface of said cap member is conical.
4. ThE cap member of claim 1, wherein said tube has an end surface defining a plane normal to the longitudinal dimension of said tube, and said cap member has an annular inner surface adapted to lie closely adjacent the end surface of said tube.
5. The cap member of claim 1, wherein said central rod is provided with a central threaded bore, and said cap member has a stem threadably received in said bore.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2158257A DE2158257A1 (en) | 1971-11-24 | 1971-11-24 | ARRANGEMENT FOR THE MANUFACTURING OF SINGLE-SIDED TUBES FROM SEMICONDUCTOR MATERIAL |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3793984A true US3793984A (en) | 1974-02-26 |
Family
ID=5826011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US00306011A Expired - Lifetime US3793984A (en) | 1971-11-24 | 1972-11-13 | Apparatus for the production of closed end tubes of semiconductor material |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US3793984A (en) |
| JP (1) | JPS5743526B2 (en) |
| AT (1) | AT324434B (en) |
| BE (1) | BE787577R (en) |
| CH (1) | CH550609A (en) |
| DD (1) | DD105727A6 (en) |
| DE (1) | DE2158257A1 (en) |
| DK (1) | DK141557C (en) |
| FR (1) | FR2160903B2 (en) |
| GB (1) | GB1370988A (en) |
| IT (1) | IT1046828B (en) |
| NL (1) | NL7212471A (en) |
| SE (1) | SE375555B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5453233A (en) * | 1993-04-05 | 1995-09-26 | Cvd, Inc. | Method of producing domes of ZNS and ZNSE via a chemical vapor deposition technique |
| US5516957A (en) * | 1991-12-26 | 1996-05-14 | Uop | Discrete molecular sieve and use |
| US6711191B1 (en) | 1999-03-04 | 2004-03-23 | Nichia Corporation | Nitride semiconductor laser device |
| US6835956B1 (en) | 1999-02-09 | 2004-12-28 | Nichia Corporation | Nitride semiconductor device and manufacturing method thereof |
| US7365369B2 (en) | 1997-07-25 | 2008-04-29 | Nichia Corporation | Nitride semiconductor device |
| US20090278165A1 (en) * | 2008-05-09 | 2009-11-12 | National Chiao Tung University | Light emitting device and fabrication method therefor |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB450959A (en) * | 1934-10-22 | 1936-07-22 | Robert Calvert Knight Young | Electric resistance heaters |
| US2271838A (en) * | 1939-11-06 | 1942-02-03 | Dow Chemical Co | Electric furnace resistor element |
| US2355343A (en) * | 1941-07-23 | 1944-08-08 | Ind De L Aluminum Sa | Furnace for the electrothermal production of magnesium |
| US2858403A (en) * | 1956-04-23 | 1958-10-28 | Carborundum Co | Silicon carbide immersion heating device |
| US2955566A (en) * | 1957-04-16 | 1960-10-11 | Chilean Nitrate Sales Corp | Dissociation-deposition unit for the production of chromium |
| US3139363A (en) * | 1960-01-04 | 1964-06-30 | Texas Instruments Inc | Method of making a silicon article by use of a removable core of tantalum |
| US3451772A (en) * | 1967-06-14 | 1969-06-24 | Air Reduction | Production of ultrapure titanium nitride refractory articles |
| US3717439A (en) * | 1970-11-18 | 1973-02-20 | Tokyo Shibaura Electric Co | Vapour phase reaction apparatus |
-
1971
- 1971-11-24 DE DE2158257A patent/DE2158257A1/en active Pending
-
1972
- 1972-08-14 BE BE787577A patent/BE787577R/en active
- 1972-09-14 NL NL7212471A patent/NL7212471A/xx unknown
- 1972-10-02 AT AT843372A patent/AT324434B/en not_active IP Right Cessation
- 1972-10-03 CH CH1440472A patent/CH550609A/en unknown
- 1972-10-31 GB GB5003472A patent/GB1370988A/en not_active Expired
- 1972-11-10 JP JP47112844A patent/JPS5743526B2/ja not_active Expired
- 1972-11-13 US US00306011A patent/US3793984A/en not_active Expired - Lifetime
- 1972-11-14 DK DK564772A patent/DK141557C/en active
- 1972-11-17 SE SE7215010A patent/SE375555B/xx unknown
- 1972-11-21 IT IT31886/72A patent/IT1046828B/en active
- 1972-11-21 FR FR7241300A patent/FR2160903B2/fr not_active Expired
- 1972-11-22 DD DD167018A patent/DD105727A6/xx unknown
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB450959A (en) * | 1934-10-22 | 1936-07-22 | Robert Calvert Knight Young | Electric resistance heaters |
| US2271838A (en) * | 1939-11-06 | 1942-02-03 | Dow Chemical Co | Electric furnace resistor element |
| US2355343A (en) * | 1941-07-23 | 1944-08-08 | Ind De L Aluminum Sa | Furnace for the electrothermal production of magnesium |
| US2858403A (en) * | 1956-04-23 | 1958-10-28 | Carborundum Co | Silicon carbide immersion heating device |
| US2955566A (en) * | 1957-04-16 | 1960-10-11 | Chilean Nitrate Sales Corp | Dissociation-deposition unit for the production of chromium |
| US3139363A (en) * | 1960-01-04 | 1964-06-30 | Texas Instruments Inc | Method of making a silicon article by use of a removable core of tantalum |
| US3451772A (en) * | 1967-06-14 | 1969-06-24 | Air Reduction | Production of ultrapure titanium nitride refractory articles |
| US3717439A (en) * | 1970-11-18 | 1973-02-20 | Tokyo Shibaura Electric Co | Vapour phase reaction apparatus |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5516957A (en) * | 1991-12-26 | 1996-05-14 | Uop | Discrete molecular sieve and use |
| US5453233A (en) * | 1993-04-05 | 1995-09-26 | Cvd, Inc. | Method of producing domes of ZNS and ZNSE via a chemical vapor deposition technique |
| US8592841B2 (en) | 1997-07-25 | 2013-11-26 | Nichia Corporation | Nitride semiconductor device |
| US7365369B2 (en) | 1997-07-25 | 2008-04-29 | Nichia Corporation | Nitride semiconductor device |
| US6835956B1 (en) | 1999-02-09 | 2004-12-28 | Nichia Corporation | Nitride semiconductor device and manufacturing method thereof |
| US7083996B2 (en) | 1999-02-09 | 2006-08-01 | Nichia Corporation | Nitride semiconductor device and manufacturing method thereof |
| US20060078022A1 (en) * | 1999-03-04 | 2006-04-13 | Tokuya Kozaki | Nitride semiconductor laser device |
| US7015053B2 (en) | 1999-03-04 | 2006-03-21 | Nichia Corporation | Nitride semiconductor laser device |
| US20040101986A1 (en) * | 1999-03-04 | 2004-05-27 | Nichia Corporation | Nitride semiconductor laser device |
| US7496124B2 (en) | 1999-03-04 | 2009-02-24 | Nichia Corporation | Nitride semiconductor laser device |
| US6711191B1 (en) | 1999-03-04 | 2004-03-23 | Nichia Corporation | Nitride semiconductor laser device |
| US20090278165A1 (en) * | 2008-05-09 | 2009-11-12 | National Chiao Tung University | Light emitting device and fabrication method therefor |
| US7977687B2 (en) | 2008-05-09 | 2011-07-12 | National Chiao Tung University | Light emitter device |
Also Published As
| Publication number | Publication date |
|---|---|
| DK141557B (en) | 1980-04-21 |
| DD105727A6 (en) | 1974-05-12 |
| AT324434B (en) | 1975-08-25 |
| FR2160903B2 (en) | 1976-08-20 |
| IT1046828B (en) | 1980-07-31 |
| GB1370988A (en) | 1974-10-23 |
| FR2160903A2 (en) | 1973-07-06 |
| CH550609A (en) | 1974-06-28 |
| JPS5743526B2 (en) | 1982-09-16 |
| JPS4863976A (en) | 1973-09-05 |
| DE2158257A1 (en) | 1973-05-30 |
| SE375555B (en) | 1975-04-21 |
| NL7212471A (en) | 1973-05-28 |
| BE787577R (en) | 1972-12-01 |
| DK141557C (en) | 1980-09-08 |
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