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GB1370988A - Production of tubes of semiconductor material closed at one end - Google Patents

Production of tubes of semiconductor material closed at one end

Info

Publication number
GB1370988A
GB1370988A GB5003472A GB5003472A GB1370988A GB 1370988 A GB1370988 A GB 1370988A GB 5003472 A GB5003472 A GB 5003472A GB 5003472 A GB5003472 A GB 5003472A GB 1370988 A GB1370988 A GB 1370988A
Authority
GB
United Kingdom
Prior art keywords
tubes
production
semiconductor material
material closed
cap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5003472A
Inventor
A Kasper
W Dietze
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1370988A publication Critical patent/GB1370988A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/073—Hollow body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

1370988 Silicon SIEMENS AG 31 Oct 1972 [24 Nov 1971] 50034/72 Addition to 1340464 Heading C1A That form of the apparatus described in Specification 1,340,464 in which the rod-shaped electrode member is formed with a recess into which a mushroom-shaped cover member is screwed or pressed is modified by forming the cap of the cover member of conical shape, tapering from a peak in the centre. The outer edge of the cap and the abutting edge of the carrier body may be rounded off at the line of contact. The deposited material may be silicon.
GB5003472A 1971-11-24 1972-10-31 Production of tubes of semiconductor material closed at one end Expired GB1370988A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2158257A DE2158257A1 (en) 1971-11-24 1971-11-24 ARRANGEMENT FOR THE MANUFACTURING OF SINGLE-SIDED TUBES FROM SEMICONDUCTOR MATERIAL

Publications (1)

Publication Number Publication Date
GB1370988A true GB1370988A (en) 1974-10-23

Family

ID=5826011

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5003472A Expired GB1370988A (en) 1971-11-24 1972-10-31 Production of tubes of semiconductor material closed at one end

Country Status (13)

Country Link
US (1) US3793984A (en)
JP (1) JPS5743526B2 (en)
AT (1) AT324434B (en)
BE (1) BE787577R (en)
CH (1) CH550609A (en)
DD (1) DD105727A6 (en)
DE (1) DE2158257A1 (en)
DK (1) DK141557C (en)
FR (1) FR2160903B2 (en)
GB (1) GB1370988A (en)
IT (1) IT1046828B (en)
NL (1) NL7212471A (en)
SE (1) SE375555B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5478787A (en) * 1991-12-26 1995-12-26 Uop Discrete molecular sieve and use
US5453233A (en) * 1993-04-05 1995-09-26 Cvd, Inc. Method of producing domes of ZNS and ZNSE via a chemical vapor deposition technique
AU747260B2 (en) 1997-07-25 2002-05-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3770014B2 (en) 1999-02-09 2006-04-26 日亜化学工業株式会社 Nitride semiconductor device
US6711191B1 (en) 1999-03-04 2004-03-23 Nichia Corporation Nitride semiconductor laser device
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB450959A (en) * 1934-10-22 1936-07-22 Robert Calvert Knight Young Electric resistance heaters
US2271838A (en) * 1939-11-06 1942-02-03 Dow Chemical Co Electric furnace resistor element
US2355343A (en) * 1941-07-23 1944-08-08 Ind De L Aluminum Sa Furnace for the electrothermal production of magnesium
US2858403A (en) * 1956-04-23 1958-10-28 Carborundum Co Silicon carbide immersion heating device
US2955566A (en) * 1957-04-16 1960-10-11 Chilean Nitrate Sales Corp Dissociation-deposition unit for the production of chromium
GB944009A (en) * 1960-01-04 1963-12-11 Texas Instruments Ltd Improvements in or relating to the deposition of silicon on a tantalum article
US3451772A (en) * 1967-06-14 1969-06-24 Air Reduction Production of ultrapure titanium nitride refractory articles
US3717439A (en) * 1970-11-18 1973-02-20 Tokyo Shibaura Electric Co Vapour phase reaction apparatus

Also Published As

Publication number Publication date
DK141557B (en) 1980-04-21
US3793984A (en) 1974-02-26
DD105727A6 (en) 1974-05-12
AT324434B (en) 1975-08-25
FR2160903B2 (en) 1976-08-20
IT1046828B (en) 1980-07-31
FR2160903A2 (en) 1973-07-06
CH550609A (en) 1974-06-28
JPS5743526B2 (en) 1982-09-16
JPS4863976A (en) 1973-09-05
DE2158257A1 (en) 1973-05-30
SE375555B (en) 1975-04-21
NL7212471A (en) 1973-05-28
BE787577R (en) 1972-12-01
DK141557C (en) 1980-09-08

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee