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TWI737868B - 成膜裝置及成膜方法 - Google Patents

成膜裝置及成膜方法 Download PDF

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TWI737868B
TWI737868B TW106144307A TW106144307A TWI737868B TW I737868 B TWI737868 B TW I737868B TW 106144307 A TW106144307 A TW 106144307A TW 106144307 A TW106144307 A TW 106144307A TW I737868 B TWI737868 B TW I737868B
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gas
film
processed
substrate
processing
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TW106144307A
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TW201840894A (zh
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竹澤由裕
坂下訓康
中島滋
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日商東京威力科創股份有限公司
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Abstract

本發明於對沿垂直方向呈多層配置之狀態下之複數之基板進行成膜處理之際，使膜厚的面內均勻性及覆蓋（coverage）性能優良。成膜裝置100包括：基板固持構件5，將複數之被處理基板以既定間隔而沿垂直方向呈多層固持；處理容器1，收納將被處理基板W加以固持之基板固持構件5；處理氣體導入構件19、22，具有對於處理容器1內的被處理基板W平行噴吐處理氣體之複數之氣體噴吐孔19a、22a，將處理氣體導入至處理容器1內；排氣機構41，將處理容器1內加以排氣；以及複數之氣體流調整構件65，與被處理基板W各自相向設置；且氣體流調整構件65將自噴吐孔19a、22a對於被處理基板W平行噴吐之處理氣體的氣體流，調整成自位在其下方之被處理基板W的上方朝向其表面之氣體流。

Description

成膜裝置及成膜方法
本發明關於對沿垂直方向呈多層配置之狀態之複數之被處理基板而進行成膜處理之成膜裝置及成膜方法。
例如，於半導體元件的製造之中，在對於半導體晶圓等基板進行擴散處理、成膜處理、氧化處理等熱處理之情形下，廣泛使用一種批次式立式熱處理裝置，將沿垂直方向呈多層配置有複數之基板之石英製的晶舟搬入至立式的石英製處理容器內，藉由氣體注入器而將氣體供給至基板，且一併藉由設在處理容器的周圍之加熱器將基板加熱，其中，上述氣體注入器具有沿基板的配置方向延伸、並設在與各晶圓對應的位置之複數之氣體噴吐孔。
近來，伴隨半導體元件之微細化、構造之複雑化，將如此立式熱處理裝置使用於化學蒸鍍法(CVD法)或原子層沉積法(ALD法)所成之成膜處理之情形下，要求膜厚的面內均勻性。
針對如此要求，專利文獻1記載有與沿垂直方向呈多層配置之複數之基板的處理面分別相向而配置圓環狀(環狀)構件。
〔先前技術文獻〕
〔專利文獻〕
專利文獻1：日本特開2010-132958號公報
然而，近來，半導體元件之微細化及構造之複雑化日益進展，吾人要求進一步之膜厚的面內均勻性，尤其，對於HfO2膜等高介電常數(High-k)膜要求進一步之面內均勻性及覆蓋(coverage)性能，上述專利文獻1的技術逐漸變得不足。
從而，本發明之目的係提供一種成膜裝置及成膜方法，可於針對沿垂直方向呈多層配置之狀態下之複數之基板進行成膜處理之際，使膜厚的面內均勻性及覆蓋性能優良。
為了解決上述問題，本發明的第一態樣係一種成膜裝置，在一被處理基板的表面進行既定之膜的成膜，其特徵為具備：基板固持構件，將複數之被處理基板以既定間隔沿垂直方向呈多層固持；處理容器，收納將複數之被處理基板加以固持之前述基板固持構件；處理氣體導入構件，具有對於前述處理容器內的前述被處理基板平行噴吐成膜用的處理氣體之複數之氣體噴吐孔，將處理氣體導入至前述處理容器內；排氣機構，將前述處理容器內加以排氣；以及複數之氣體流調整構件，與前述複數之被處理基板各自相向設置；且前述氣體流調整構件將自前述處理氣體導入構件的前述氣體噴吐孔對於被處理基板平行噴吐之前述處理氣體的氣體流，調整成自位在其下方之被處理基板的上方朝向其表面之氣體流。
第一態樣之中，前述氣體流調整構件宜具有複數之貫穿孔，且經由該複數之貫穿孔而對下方的被處理基板供給自上方朝向其表面氣體流。此情形下，前述處理氣體導入構件宜具有沿著晶圓的排列方向而垂直延伸之垂直部，前述複數之氣體噴吐孔宜配置在前述垂直部中之前述複數之氣體流調整構件各自的垂直方向位置的正上方，且自前述氣體噴吐孔呈水平噴吐之前述處理氣體，宜經由前述氣體流調整構件的前述貫穿孔，而對位在其下方之被處理基板供給自上方朝向其表面之氣體流。
前述氣體流調整構件亦可具有環狀構件、將前述環狀構件的上表面加以遮擋之板狀構件、及形成於前述環狀構件之狹縫，且自前述狹縫而對位在其下方之被處理基板的表面供給前述氣體流。
就成膜裝置而言，亦可更具有：加熱手段，設在前述處理容器的周圍，將前述處理容器的內部加熱置既定溫度。
前述處理氣體亦可包含：原料氣體，含有待成膜之膜的構成元素；以及反應氣體，其與原料氣體反應；且前述處理氣體導入構件亦可具有將前述原料氣體加以導入之第一氣體導入構件、將前述反應氣體加以導入之第二氣體導入構件。
本發明的第二態樣係一種成膜方法，使用成膜裝置而在一被處理基板的表面進行既定之膜的成膜，該成膜裝置具備：基板固持構件，將複數之被處理基板以既定間隔沿垂直方向呈多層固持；處理容器，收納將複數之被處理基板加以固持之前述基板固持構件；處理氣體導入構件，具有對於前述處理容器內的前述被處理基板平行噴吐成膜用的處理氣體之複數之氣體噴吐孔，將處理氣體導入至前述處理容器內；以及排氣機構，將前述處理容器內加以排氣；該成膜方法的特徵為，將自前述處理氣體導入構件的前述氣體噴吐孔對於被處理基板平行噴吐之前述處理氣體的氣體流，調整成自位在其下方之被處理基板的上方朝向其表面之氣體流而進行成膜處理。
上述第二態樣之中，前述處理氣體亦可包含：原料氣體，含有待成膜之膜的構成元素；以及反應氣體，與原料氣體反應；且藉由此等的反應而將既定之膜加以成膜在前述被處理基板的表面。
上述第一態樣及第二態樣之中，前述成膜亦可藉由將前述原料氣體與前述反應氣體加以依序供給之ALD(原子層沉積；Atomic Layer Deposition)法而進行成膜。前述既定之膜可係高介電常數膜，且就高-k膜而言舉例有HfO2膜。
依據本發明，可將自處理氣體導入構件的氣體噴吐孔對於被處理基板平行噴吐之處理氣體的氣體流，調整成自位在其下方之被處理基板的上方朝向其表面之氣體流，因此可使成膜在被處理基板之膜的膜厚的面內均勻性優良。又，如上所述，形成自被處理基板的上方朝向其表面之氣體流，因此亦充份將處理氣體供給至如同溝渠之凹部內，可使覆蓋性能優良。
1:處理容器
1a:突出部
2:頂壁板
3:岐管
4:密封構件
5:晶舟
7:保溫筒
8:檯
9:蓋部
10:旋轉軸
11:磁性流體密封
12:密封構件
14:原料氣體供給機構
15:反應氣體供給機構
16:吹滌氣體供給機構
17:原料氣體供給源
18:原料氣體配管
18a:開閉閥
18b:流量控制器
19、22:氣體注入器
19a、22a:氣體噴吐口
20:反應氣體供給源
21:反應氣體配管
21a:開閉閥
21b:流量控制器
23:吹滌氣體供給源
24:吹滌氣體配管
24a:開閉閥
24b:流量控制器
25:吹滌氣體噴嘴
37:排氣口
38:排氣口罩蓋構件
39:排氣管
40:壓力控制閥
41:排氣裝置
42:加熱裝置
50:控制部
51:頂板
52:底板
53:支柱
54:溝槽
60:環狀構件
61:支持構件
62:圓板構件
63:狹縫
65:氣體流調整構件(噴淋板)
66:貫穿孔
67:支持構件
100:成膜裝置
W:半導體晶圓
圖1係將作為本發明使用之立式熱處理裝置而構成之成膜裝置的概略構成加以顯示之剖視圖。
圖2係藉由圖1的成膜裝置而利用ALD法成膜之際的氣體供給序列。
圖3係用以說明晶舟的構造之立體圖。
圖4顯示晶舟的支柱所形成之溝插入有晶圓之狀態。
圖5係將以往成膜裝置之供給至晶圓之氣體流加以顯示之示意圖。
圖6係將藉由以往成膜裝置之氣體流而成膜之情形下的膜厚面內分佈的一例加以顯示之示意圖。
圖7顯示藉由以往成膜裝置之氣體流而實際將HfO2膜加以成膜之際的膜厚測量結果。
圖8顯示在氣體流實驗的實驗1及實驗2使用之環構件與晶圓的配置。
圖9顯示在氣體流實驗的實驗3使用之環狀構件與圓板構件與晶圓的配置。
圖10顯示在圖9的圓板構件形成狹縫狀的開口而進行成膜之際的膜厚分佈。
圖11顯示在氣體流實驗的實驗4使用之形成有狹縫之環狀構件與圓板構件與晶圓之配置。
圖12顯示實驗1~4中之晶圓的膜厚面內均勻性。
圖13顯示實驗1~4中之晶圓的膜厚分佈。
圖14係含有將本發明一實施形態之成膜裝置的氣體流調整構件加以包含之重要部分的剖視圖。
圖15係將本發明一實施形態之成膜裝置的氣體流調整構件加以顯示之俯視圖。
圖16顯示氣體流調整構件的其他例。
〔實施發明之較佳形態〕
以下，參照附加圖式說明本發明的實施形態。
<裝置的概略>
首先，說明作為本發明使用之立式熱處理裝置而構成之成膜裝置的概略構成。圖1係將本發明使用之立式熱處理裝置的概略構成加以顯示之剖視圖。
本例的成膜裝置100具有下端開口之有頂壁的圓筒體狀的處理容器1。此處理容器1整體例如由石英形成，且此處理容器1內的頂壁設有石英製的頂壁板2而被封堵。如同後述，處理容器1係由加熱裝置加熱，構成為熱壁式成膜裝置。又，此處理容器1的下端開口部經由O環等密封構件4而連結有例如由不鏽鋼成形為圓筒體狀之歧管3。
上述歧管3支持處理容器1的下端，且可從此歧管3的下方插入將多數枚例如25~75枚左右的半導體晶圓(以下僅記為晶圓)W作為被處理體加以載置之石英製的晶舟5至處理容器1內。此晶舟5的構造將於後詳細說明。
此晶舟5係隔著石英製的保溫筒7而載置在檯8上，此檯8係被支持在將開閉歧管3的下端開口部之例如不鏽鋼製的蓋部9加以貫穿之旋轉軸10上。
而且，此旋轉軸10的貫穿部例如設有磁性流體密封11，將旋轉軸10氣密密封且亦支持成可旋轉。又，蓋部9的周邊部與歧管3的下端部之間插設有例如由O環構成之密封構件12，藉此保持處理容器1內的密封性。
旋轉軸10例如安裝在舟昇降機等昇降機構(未圖示)所支持之臂13的前端，且將晶舟5及蓋部9等一起昇降而插入至處理容器1內。此外，亦可將上述檯8固定設置至上述蓋部9側，不使晶舟5旋轉，而進行晶圓W的處理。
成膜裝置100具有：複數之氣體供給機構，分別供給複數種氣體作為待藉由ALD法或CVD法而成膜之膜所須之處理氣體。例如具有：原料氣體供給機構14，往處理容器1內供給含有待成膜之膜的構成元素的原料氣體(前驅物)作為處理氣體；反應氣體供給機構15，往處理容器1內供給與原料氣體反應之反應氣體作為處理氣體；以及吹滌氣體供給機構16，往處理容器1內供給吹滌氣體。
原料氣體供給機構14具有：原料氣體供給源17；原料氣體配管18，自原料氣體供給源17引導原料氣體；以及開閉閥18a與如同質流控制器之流量控制器18b，設在原料氣體配管18。
反應氣體供給機構15具有：反應氣體供給源20；反應氣體配管21，自反應氣體供給源20引導反應氣體；以及開閉閥21a與如同質流控制器之流量控制器21b，設在反應氣體配管21。
吹滌氣體供給機構16具有：吹滌氣體供給源23；吹滌氣體供給配管24，自吹滌氣體供給源23引導吹滌氣體；以及開閉閥24a與如同質流控制器之流量控制器24b，設在吹滌氣體供給配管24。
原料氣體配管18連接有氣體注入器19作為將原料氣體導入至處理容器1內之氣體導入構件。氣體注入器19係由石英構成，且具有：水平部，將歧管3的側壁往內側貫穿；以及垂直部，自水平部起90°折曲而沿伸至處理容器1內的晶舟5的上端；且垂直部具有：複數之氣體噴吐孔19a，用以呈水平噴吐原料氣體，將原料氣體噴吐向各晶圓W。
反應氣體配管21亦連接有氣體注入器22作為將反應氣體導入至處理容器1內之氣體導入構件。氣體注入器22亦與氣體注入器19同樣，由石英構成，且具有：水平部，將歧管3的側壁往內側貫穿；以及垂直部，延伸至晶舟5的上端為止；且垂直部具有：複數之氣體噴吐孔22a，用以呈水平噴吐反應氣體，將反應氣體噴吐向各晶圓W。
吹滌氣體配管24連接有將吹滌氣體導入至處理容器內之吹滌氣體噴嘴25。
就成膜之膜而言，不特別限制，舉例表示ZrO2、HfO2、TiO2、Al2O3、SiO2等氧化膜、HfN、TiN、AlN、SiN等氮化膜、ZrAlO、HfAlO、HfSiON等將上述化合物加以組合之複合膜。將原料氣體(前驅物)及反應氣體(氧化氣體或氮化氣體)因應於成膜之膜而合宜設定。
就膜厚的面內均勻性而言，尤其HfO2膜等高介電常數膜容易成為問題，因此宜係高介電常數膜。例如將HfO2膜加以成膜之情形下，就原料氣體而言，使用如同四二甲胺基鉿(Hf(NCH3)2)4：TDMAH)之有機鉿化合物、或氯化鉿 (HfCl4)等，就反應氣體而言，使用O3氣體、H2O氣體、O2氣體、NO2氣體、NO氣體、N2O氣體等氧化劑。
成膜之膜於須複數種原料氣體或反應氣體之情形下，亦可合宜增加原料氣體供給機構、反應氣體供給機構、氣體注入器的數量。又，亦可針對一種氣體而設有二台以上氣體注入器。
就吹滌氣體而言，例如可使用N2氣體或Ar氣體等惰性氣體。
處理容器1的一側面沿著高度方向而形成有突出部1a，且突出部1a的內部空間配置有反應氣體用的氣體注入器22。另一方面，將原料氣體用的氣體注入器19設在與突出部1a鄰接之位置。
此外，亦可在突出部1a設置電漿生成機構，而將反應氣體加以電漿化。
處理容器1之與突出部1a相反側的部分，沿處理容器1的側壁的上下方向而細長地形成有用以將處理容器1內加以真空排氣之排氣口37。處理容器1之對應於排氣口37的部分，以包覆排氣口37之方式安裝有成形為截面呈U字狀之排氣口罩蓋構件38。此排氣口罩蓋構件38的下部經由排氣口37而連接有將處理容器1內加以排氣之排氣管39。排氣管39連接有將處理容器1內的壓力加以控制之壓力控制閥40、及包含真空泵等之排氣裝置41，且藉由排氣裝置41而經由排氣管39將處理容器1內加以排氣，一併將處理容器1內控制成既定壓力。
在處理容器1的外側，圍繞處理容器1而設有用以將處理容器1及其內部的晶圓W加熱之筒體狀的加熱裝置42。加熱裝置42內建有電阻加熱加熱器。
成膜裝置100具有控制部50。控制部50控制成膜裝置100的各構成部，例如閥類、流量控制器即質流控制器、昇降機構等驅動機構、加熱器電源等。控制部50具有CPU(電腦)，且具有進行上述控制之主控制部、輸入裝置、輸出裝置、顯示裝置、及記憶裝置。記憶裝置設有：記憶媒體，收納有用以將在成膜裝置100執行之處理加以控制之程式，亦即處理配方；且主控制部控制成呼叫記憶媒體所記憶之既定處理配方，並基於該處理配方而藉由成膜裝置100進行既定處理。
如此成膜裝置100之中，藉由存在於處理容器1的配置位置的下方之轉移機構(未圖示)，而將被處理基板即未處理的晶圓W轉移至晶舟5，並藉由昇降機構使晶舟5上昇，且藉由密封構件12而使歧管3與蓋部9密接，將處理容器1內定為密閉空間。
而且，將處理容器1內調整為例如0.1~100Torr(13.3~13330Pa)之既定壓力後，將開閉閥24a開啟並以既定流量使吹滌氣體流通而將處理容器1內加以吹滌，並於該狀態下，藉由加熱裝置42而以使晶舟5的中心部(上下方向的中央部)的溫度例如成為300~700℃之範圍的既定溫度之方式，事先加熱處理容器1內。
於此狀態下一邊使晶舟5旋轉，一邊同時供給原料氣體及反應氣體而藉由CVD法、或ALD法，將既定之膜加以成膜，其中，上述ALD法如圖2所示，將原料氣體與反應氣體夾著吹滌而交叉供給，依序進行原料氣體之吸附、及所吸附之原料氣體與反應氣體之反應。原料氣體之吹滌及反應氣體之吹滌，係藉由一邊將處理容器1加以排氣，但亦一邊將吹滌氣體供給至處理容器1內而進行。藉由ALD法可進行比CVD法更均勻且覆蓋優良之膜形成。
<習知朝向晶圓之氣體流>
晶舟5如圖3所示，具有頂板51、底板52、將頂板51及底板52加以連繫之複數座例如三座支柱53。而且，如圖4所示，支柱53形成有多數條溝槽54。以往，將晶圓W嵌入至溝槽54藉以將晶圓W支持於晶舟5。而且，對於晶舟5之晶圓W之搬入搬出，係由未存有支柱53之圖3的箭號方向進行。
在對於藉由習知手法固持至晶舟5之晶圓W供給氣體之際，如圖5所示，自氣體注入器19、22所形成之氣體噴吐孔19a、22a，對晶圓W的處理面供給氣體流作為水平的側流。
然而，於如此側流之情形下，產生無法在晶圓面內得到充分膜厚均勻性之問題。尤其，於HfO2膜等高介電常數膜之情形下，將會如圖6所示，在面內方向發生晶圓的邊緣部與中央部膜厚變厚、在此等之間膜厚變薄之類的膜厚起伏。將實際之HfO2膜的CTR衍射所導致之膜厚測量結果顯示於圖7。如上所述，習知氣體供給方法無法得到所要求之膜的面內均勻性。
<氣體流實驗>
為了解決習知氣體流導致之膜厚的面內不均勻性，吾人進行各種實驗。
(實驗1)
首先，研究如同專利文獻1所記載之與晶圓W相向之環狀構件。圖8顯示當時環狀構件與晶圓之配置。此例之中，在晶舟的支柱53所形成之溝槽54嵌入環狀構件60(開口直徑299mm)，且將複數之環狀構件60沿垂直方向呈多層配置，並藉由環狀構件60上所設之支持構件61支持晶圓W，而交叉配置環狀構件60與晶圓W。將環狀構件60的下表面與晶圓上表面之間距定為3.2mm。使用如此環狀構件60而進行HfO2膜之成膜之結果，因環狀構件60的效果而使晶圓邊緣部的膜厚變薄，但晶圓中央的膜厚仍厚。因此，膜厚面內均勻性依然不足。
(實驗2)
其次，使用將開口直徑自299mm改變成200mm之環狀構件60而同樣將HfO2膜加以成膜。因將環狀構件60的開口直徑定為200mm而使晶圓中央的膜厚係厚的區域減少，或多或少地改善膜厚面內均勻性，但仍然不足。
(實驗3)
其次，如圖9所示，藉由虛置晶圓等圓板構件62而遮擋環狀構件60的開口部，其結果，晶圓周緣部以外的膜厚變薄，反而會使膜厚的面內均勻性惡化。
(實驗4)
其次，如圖10所示，吾人得知當在圖9的圓板構件62形成狹縫狀的開口而進行成膜時，則與開口對應之部分的膜厚變厚。由此而言，吾人認為自晶圓W的上方朝向晶圓W之氣體流係重要，並如圖11所示，在圖9的環狀構件60與圓板構件62之間形成狹縫63，且形成自晶圓上方往晶圓W表面的適當氣體流。將環狀構件60的下表面與晶圓上表面之間距a定為2~4mm，並將圓板構件62的下表面與晶圓上表面之間距定為約略2a，亦即4~8mm。藉由如此氣體流進行HfO2膜之成膜，其結果明顯改善膜厚的面內均勻性。
將以上實驗1~實驗4的膜厚面內均勻性之結果及膜厚分佈之結果分別示於圖12及圖13。由此等結果而言，未將氣體流妥恰調整之實驗1~3，其膜厚面內均勻性完全不足，尤其，在環狀構件60上再以圓板構件62作為蓋之實驗3，其膜厚的面內均勻性顯著惡化，但自晶圓W的上方往晶圓W表面形成有適當氣體流之實驗4之中，膜厚面內均勻性大幅改善。
<氣體流調整構件>
於是，本實施形態之中，將可有效使自晶舟5所固持之晶圓W的上方朝向晶圓W表面之處理氣體的氣體流形成之氣體流調整構件與晶圓W交叉設置。藉此，可使膜厚面內均勻性優良。又，如上所述，形成自晶圓W的上方朝向其表面之氣體流，因此亦可充份將處理氣體供給至如同溝渠之凹部內，使覆蓋性能優良。
圖14係含有將本發明一實施形態之成膜裝置的氣體流調整構件加以包含之重要部分之剖視圖。本實施形態之中，晶舟5具有圖3所示之構造。晶舟5之形成於支柱3的複數之溝槽54分別嵌入有環狀構件60，且複數之環狀構件60係沿垂直方向呈多層配置。此複數之環狀構件60上載置有氣體流調整構件65。氣體流調整構件65如圖15所示，成為圓板狀，且約略均等形成有多數個貫穿孔66，而構成噴淋板。
氣體流調整構件65的上表面安裝有以向上方突出之方式設置之複數之支持構件67，支持構件67上支持有晶圓W。從而，將氣體流調整構件65與晶圓W交叉配置成相向。
晶舟5之中，將氣體注入器19、22各自所形成之氣體噴吐孔19a、22a加以位置調整成氣體流調整構件65的垂直方向位置的正上方，使經由氣體噴吐孔19a、22a而作為側流呈水平噴吐之氣體流通過氣體流調整構件65的貫穿孔66向下方流動。將通過貫穿孔66之氣體流供給作為朝向配置在其下之晶圓W的表面之氣體流。此時，自上方朝向晶圓W的表面之氣體流宜約略垂直。
亦即，就晶圓W的表面而言，通過氣體流調整構件65所均等配置之複數之貫穿孔66之氣體流，係自上方均等供給至晶圓整面。
如上所述，將已驗證為了膜厚面內均勻性係重要之自晶圓上方朝向晶圓表面之氣體流均等供給至晶圓整面，因此可使膜厚面內均勻性更優良。又，如上 所述，來自作為噴淋板而構成之氣體流調整構件65所約略均等形成之多數個貫穿孔66之氣體流，可朝向其下的晶圓W的表面而以接近垂直之狀態供給，因此可更確實將處理氣體供給至如同溝渠之凹部內，使覆蓋性能更優良。
此時，可調整晶圓W的上表面與將氣體流供給至該晶圓之上方的氣體流調整構件65之間的距離b、及晶圓W與位在該晶圓的下方之氣體流調整構件65之間的距離c，藉以調整膜厚面內均勻性。
以上的例係將氣體流調整構件65載置在環狀構件60上之例，但如圖16所示，亦可不使用環狀構件60，而直接將氣體流調整構件65嵌入至晶舟5的支柱53的溝槽54。
<其他使用>
以上已說明本發明之實施形態，但本發明不限定於上述實施形態，可於不超脫其思想之範圍進行各種變形。
例如，上述實施形態之中係將設有作為氣體流調整構件噴淋板之例加以顯示，但不限於此，只要可自被處理基板的上方供給朝向被處理基板表面之氣體流即可，例如亦可如上述實驗4，在環狀構件形成狹縫，自狹縫而將氣體流供給至位在下方之被處理基板。
又，上述實施形態之中，就被處理基板而言以半導體晶圓為例表示，但不限於此，當然亦可使用玻璃基板或陶瓷基板等其他基板。
5‧‧‧晶舟
19、22‧‧‧氣體注入器
19a、22a‧‧‧氣體噴吐口
53‧‧‧支柱
54‧‧‧溝槽
60‧‧‧環狀構件
65‧‧‧氣體流調整構件(噴淋板)
66‧‧‧貫穿孔
W‧‧‧半導體晶圓

Claims (11)

  1. 一種成膜裝置，在一被處理基板的表面進行既定之膜的成膜，其特徵為具備：基板固持構件，將複數之被處理基板以既定間隔沿垂直方向呈多層固持；處理容器，用以收納將複數之被處理基板加以固持之該基板固持構件；處理氣體導入構件，具有對於該處理容器內的該被處理基板平行噴吐成膜用的處理氣體之複數之氣體噴吐孔，將處理氣體導入至該處理容器內；排氣口，形成於該處理容器之與該處理氣體導入構件相反側的部分，用於將該處理容器內加以排氣；排氣機構，將該處理容器內加以排氣；以及複數之氣體流調整構件，與該複數之被處理基板各自相向交叉設置；且該氣體流調整構件，將自該處理氣體導入構件的該氣體噴吐孔對於被處理基板平行噴吐之該處理氣體的氣體流，調整成自位在其下方之被處理基板的上方朝向被處理基板的表面之氣體流，該氣體流調整構件具有環狀構件、將該環狀構件的上表面加以遮擋之板狀構件、及形成於該環狀構件並位於該環狀構件與該板狀構件之間之狹縫，且自該狹縫對位在其下方之被處理基板的表面供給該氣體流。
  2. 如申請專利範圍第1項之成膜裝置，其中，更具有：加熱手段，設在該處理容器的周圍，將該處理容器的內部加熱成既定溫度。
  3. 如申請專利範圍第1項中之成膜裝置，其中，該處理氣體包含：原料氣體，含有待成膜之膜的構成元素；以及與原料氣體發生反應之反應氣體；且該處理氣體導入構件具有：將該原料氣體加以導入之第一氣體導入構件、及將該反應氣體加以導入之第二氣體導入構件。
  4. 如申請專利範圍第3項之成膜裝置，其中，藉由將該原料氣體與該反應氣體加以依序供給之ALD(原子層沉積)法而進行成膜。
  5. 如申請專利範圍第4項之成膜裝置，其中，該既定之膜係高介電常數(High-k)膜。
  6. 如申請專利範圍第5項之成膜裝置，其中，該既定之膜係HfO2膜。
  7. 一種成膜方法，使用成膜裝置在一被處理基板的表面進行既定之膜的成膜，該成膜裝置具備：基板固持構件，將複數之被處理基板以既定間隔沿垂直方向呈多層固持；處理容器，收納將複數之被處理基板加以固持之該基板固持構件；處理氣體導入構件，具有對於該處理容器內的該被處理基板平行噴吐成膜用的處理氣體之複數之氣體噴吐孔，將處理氣體導入至該處理容器內；排氣口，形成於該處理容器之與該處理氣體導入構件相反側的部分，用於將該處理容器內 加以排氣；排氣機構，將該處理容器內加以排氣；以及複數之氣體流調整構件，與該複數之被處理基板各自相向交叉設置；且該氣體流調整構件具有環狀構件、將該環狀構件的上表面加以遮擋之板狀構件、及形成於該環狀構件並位於該環狀構件與該板狀構件之間之狹縫，且自該狹縫對位在其下方之被處理基板的表面供給該氣體流；該成膜方法係藉由該氣體流調整構件將自該處理氣體導入構件的該氣體噴吐孔對於被處理基板平行噴吐之該處理氣體的氣體流，調整成自位在其下方之被處理基板的上方朝向被處理基板的表面之氣體流而進行成膜處理。
  8. 如申請專利範圍第7項之成膜方法，其中，該處理氣體包含：原料氣體，含有待成膜之膜的構成元素；以及與原料氣體反應之反應氣體；且藉由此等反應，在該被處理基板的表面進行既定之膜的成膜。
  9. 如申請專利範圍第8項之成膜方法，其中，藉由將該原料氣體與該反應氣體加以依序供給之ALD法而進行成膜。
  10. 如申請專利範圍第9項之成膜方法，其中，該既定之膜係高介電常數膜。
  11. 如申請專利範圍第10項之成膜方法，其中，該既定之膜係HfO2膜。
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