TWI671431B - Showerhead for thin-film deposition and thin-film deposition apparatus comprising the same - Google Patents

Abstract

A spraying head for thin film deposition includes an upper surface and a lower surface opposite to the upper surface; a plurality of first exhaust holes are located on the lower surface; an air inlet for a first process gas to pass through the air inlet Port to the first exhaust holes; and a gas supply pipe connected between the air inlet and the first exhaust holes, so that the first process gas can enter the gas through the gas supply pipe The first exhaust hole is sprayed out, and an exhaust direction of one of the first exhaust holes is inclined at an acute angle β with respect to a normal line of the lower surface. A thin film deposition apparatus including the above-mentioned spray head for thin film deposition is also provided.

Description

Spray head for thin film deposition and thin film deposition device containing the same

The invention relates to a spray head for thin film deposition and a thin film deposition device containing the spray head.

When traditionally manufacturing thin-film light-emitting diodes, molecular beam epitaxy (MBE), chemical vapor deposition (CVD), and plasma-assisted chemical vapor deposition (Plasma Enhanced Chemical) can be used. Vapor Deposition (PECVD), Atomic Layer Epitaxy (ALE), or Atomic Layer Deposition (ALD) to grow various thin films required to form light emitting diodes. Among them, the use of atomic layer deposition processes and plasma-assisted chemical vapor deposition processes to grow various thin films required to form light-emitting diodes has gradually become a trend.

For today's process technology, the atomic layer deposition process and the plasma-assisted chemical vapor deposition process belong to two different process chambers. This is a high cost. In the process of element transfer, the light-emitting diode element that has not been completely packaged is exposed to the environment, resulting in a reduction in film quality. Thin film deposition device.

The invention provides a spray head for thin film deposition, and a thin film deposition device including the spray head. The spray head for film deposition includes an upper surface and a lower surface opposite to the upper surface; a plurality of first exhaust holes are located on the lower surface; and an air inlet is provided for a first process gas to pass through the air inlet. Port to the first exhaust holes; and a gas supply pipe connected between the air inlet and the first exhaust holes, so that the first process gas can enter the gas through the gas supply pipe The first exhaust hole is sprayed out, and an exhaust direction of one of the first exhaust holes is inclined at an acute angle β with respect to a normal line of the lower surface.

10‧‧‧ semiconductor substrate

20‧‧‧Nuclear layer

30‧‧‧ buffer layer

40‧‧‧n-type GaN layer (n-GaN)

50‧‧‧Active Level

100‧‧‧ thin film deposition device

110‧‧‧ Upper cavity

110A‧‧‧ Upper cavity upper part

110B‧‧‧ Upper cavity lower part

115‧‧‧ second process gas conduit

120‧‧‧ lower cavity

125‧‧‧First process gas conduit

130‧‧‧Fixed device

135‧‧‧ bias electrode

140‧‧‧bearing seat

145‧‧‧Air blocking ring

148‧‧‧Drawing channel

150‧‧‧Spray head for vapor deposition

150A‧‧‧first stage air plate

150B‧‧‧Second-stage air disc

150A1‧‧‧First upper surface

150A2‧‧‧First lower surface

150B1‧‧‧Second upper surface

150B2‧‧‧Second lower surface

151‧‧‧The first recess

152‧‧‧Second Recess

153‧‧‧First exhaust hole

154‧‧‧Second exhaust hole

160‧‧‧Main gas supply pipe

161‧‧‧The first inclined pipe wall

162‧‧‧ Branch gas supply pipe

163‧‧‧Stoma

164‧‧‧ Manifold

164’‧‧‧ curved manifold

164A‧‧‧Bend

164B‧‧‧Vertical

165‧‧‧First process gas inlet

166‧‧‧First opening

167‧‧‧block

170‧‧‧ Plasma gas dispersion plate

170A‧‧‧The first plasma gas dispersion plate

170B‧‧‧Second Plasma Gas Dispersion Plate

170C‧‧‧The third plasma gas dispersion plate

172‧‧‧Third exhaust hole

174‧‧‧ Fourth exhaust hole

176‧‧‧Fifth exhaust hole

177‧‧‧ bias electrode

177A‧‧‧Dielectric layer

177B‧‧‧metal electrode

177C‧‧‧Dielectric layer

178‧‧‧Quartz fixing ring

180‧‧‧air inlet

190‧‧‧second process gas

200‧‧‧ substrate

300‧‧‧first gas supply system

310‧‧‧First precursor gas supply source

315‧‧‧The first high pressure pipe

320‧‧‧Second precursor gas supply source

325‧‧‧Second high pressure pipe

330‧‧‧Clean gas supply source

335‧‧‧The third high pressure pipe

350‧‧‧High pressure control valve

400‧‧‧second gas supply system

410‧‧‧Second process gas supply source

415‧‧‧The fourth high-pressure pipe

450‧‧‧High pressure control valve

500‧‧‧Air pump

550‧‧‧Exhaust pipe

600‧‧‧Second semiconductor layer

61‧‧‧first electrode

62‧‧‧Second electrode

620‧‧‧metal layer

640‧‧‧graphene layer

650‧‧‧graphene layer

N1‧‧‧First Normal

N2‧‧‧second normal

900‧‧‧ Cavity

FIG. 1 is a schematic cross-sectional view of a thin film deposition apparatus according to the present invention.

FIG. 2A is a plan view of the first-stage gas plate 150A and the second-stage gas plate 150B of the sprinkler head 150 for the thin-film deposition apparatus shown in FIG. 1.

FIG. 2B shows the exhaust directions of the first-stage air disc 150A and the first exhaust holes 153 and the second exhaust holes 154 on the B-B 'section line shown in FIG. 2A.

FIG. 2C shows a schematic cross-sectional view of the first-stage air disc 150A and the second-stage air disc 150B shown in FIG. 2A, which are combined into a vapor-sinking sprinkler head 150 along a section line B-B '.

FIG. 2D is an enlarged sectional view of the plasma gas dispersion plate 170 shown in FIG. 1.

Figures 2E and 2E 'show detailed sectional views of the bias electrode 177 and the plasma generating portion of Figure 2D.

Fig. 2F is a schematic cross-sectional view taken along the A-A 'section line of the second-stage air disc 150B shown in Fig. 2A.

FIG. 3 shows a top view of the carrier 140 shown in FIG. 1.

FIG. 4 is a schematic diagram of a process gas flow in a thin film deposition apparatus when a first thin film deposition mode is performed according to the present invention.

FIG. 5 is a schematic diagram of a process gas flow in a thin film deposition apparatus when a second thin film deposition mode is performed according to the present invention.

6A to 6B are cross-sectional processes of forming a composite layer electrode containing graphene and a metal pattern layer on p-GaN using a thin film deposition apparatus according to the present invention.

7A to 7C are cross-sectional processes of forming a graphene electrode on p-GaN using a thin film deposition apparatus according to the present invention.

The following will explain in detail the manufacturing and using methods of the embodiments of the present invention. It should be noted, however, that the present invention provides many applicable inventive concepts that can be embodied in many specific forms. The specific embodiments discussed by way of example are merely specific ways of making and using the invention, and are not intended to limit the scope of the invention.

Example:

First, please refer to FIG. 1, which shows a schematic cross-sectional view of a thin film deposition apparatus according to the present invention. As shown in FIG. 1, the thin film deposition apparatus according to the present invention includes a cavity 100, which is composed of an upper cavity 110, a lower cavity 120, and a fixing device 130. The upper cavity 110 includes an upper cavity The upper part 110A and an upper cavity lower part 110B are composed. The cavity 100 includes a bearing seat 140 surrounded by a gas blocking ring 145 on the surface, and is disposed in the lower cavity 120 to carry a substrate 200 and a component 110A disposed above the bearing seat 140 and positioned on the upper cavity 110A. The plasma generating system includes an air inlet chamber 180 and a plasma gas dispersion plate 170. In addition, the thin film deposition apparatus according to the present invention further includes a first air inlet system 300 adapted to provide a first process gas required in a first thin film deposition mode, and a second air inlet system 400 connected to the plasma generation system. It is suitable for providing a second process gas required in a second thin film deposition mode. The cavity 100 further includes a spraying head 150 for vapor deposition, which includes a first-stage gas plate 150A and a second-stage gas plate 150B, which are disposed on the upper cavity above the carrier 140 and between the plasma generation system. Inside the lower part 110B.

Next, please refer to FIG. 2A, which shows a top view of the first-stage air tray 150A and the second air-tray tray 150B of the spray head 150 shown in FIG. Illustration. As shown in FIG. 2A, the first-stage air disc 150A has a first upper surface 150A1 and a first lower surface 150A2 opposite to each other, and includes a plurality of first air holes with a first aperture r1 (between 3mm and 9mm). A cavity 151 is formed on the first upper surface 150A1 at a distance from each other at a first distance d1, and each first cavity 151 includes a first exhaust hole 153 penetrating the first-stage air plate 150A to the first lower surface. 150A2 with a second aperture r2 (between 0.5mm and 2.5mm); and a plurality of second recesses 152 with a third aperture r3 (between 5mm and 15mm), each other with a second distance d2 The space is formed on the first upper surface 150A1 at intervals, and each of the second recesses 152 includes a second exhaust hole 154 passing through the first lower surface 150A2 and having a fourth aperture r4 (between 0.5mm and 2.5mm). . The first cavities 151 and the second cavities 152 are staggered with each other.

Similarly, as shown in FIG. 2A, the second-stage air plate 150B has a second upper surface 150B1 and a second lower surface 150B2 opposite to each other, and the second-stage air plate 150B includes a first process gas inlet 165 Is connected to a first air inlet system 300 (as shown in FIG. 1) to introduce the first process gas when the first thin film deposition mode is started. The second-stage gas plate 150B further includes a main gas supply pipe 160 connected to the first process gas inlet 165 and provided in the second-stage gas plate 150B. A plurality of branch gas supply pipes 162 spaced from each other are respectively provided with the main gas supply. The tubes 160 are connected and arranged in the second-stage gas disc 150B. A plurality of manifolds 164 are formed on the main gas supply pipe 160 and the branch gas supply pipes 162. The manifolds 164 are spaced from each other at a first distance d1. And penetrates the second lower surface 150B2 of the second-stage air disc 150B, and each manifold 164 corresponds to each of the first-stage air disc 150A First depression 151. When the first thin film deposition mode is started, in this embodiment, the atomic layer deposition mode, the first process gas enters the main gas supply pipe 160 and the branch gas supply pipe 162 through the first process gas inlet 165, and then connects through The manifold 164 in the main gas supply pipe 160 and the branch gas supply pipe 162 is introduced into the first recesses 151, and then sprayed uniformly on the surface of the substrate 200 through the first exhaust holes 153 in each of the first recesses 151.

In addition, the second-stage gas plate 150B further includes a plurality of first openings 166 formed in a region other than the main gas supply pipe 160 and the branch gas supply pipes 162. The first openings 166 pass through at a second distance d2 spaced from each other. The second upper surface 150B1 and the second lower surface 150B2, and each of the first openings 166 respectively corresponds to each of the second recesses 152 in the first-stage gas plate 150A, so that the electricity generated when the second thin film deposition mode is activated The plasma can enter the second cavity 152 through the first opening 166 to form a plurality of plasma sources arranged in a matrix, and spray the plasma evenly on the substrate 200 through the second exhaust holes 154 in each second cavity 152. surface.

Next, please refer to FIG. 2B, which shows the exhaust of the first-stage air disc 150A and the first exhaust hole 153 and the second exhaust hole 154 located on the BB ′ section line shown in FIG. 2A. Direction illustration. Among them, the exhaust direction of the first exhaust hole 153 and the second exhaust hole 154 located on the BB ′ section line is inclined at an acute angle β with respect to the second normal line N2 perpendicular to the first-order air disc 150A. And its horizontal component is perpendicular to the line formed by the first exhaust hole 153 and the second exhaust hole 154 and the central axis normal line Nc of the first-stage air disc 150A, and the first exhaust hole 153 located at another position And the second exhaust hole 154 are also provided in the first stage gas in the same manner On the tray 150A. In one embodiment, 30 ° ≦ β ≦ 60 °. In this embodiment, since each of the first exhaust holes 153 and each of the second exhaust holes 154 is exhausted in an oblique angle β manner with respect to the normal line N2 of the vertical first-order air disc 150A, in addition to spraying vertically Outside the surface of the substrate 200, the horizontal exhaust direction component forms a clockwise vortex, so that the reaction gas can be more uniformly distributed in the cavity 100. Although the scroll of this embodiment rotates clockwise, those skilled in the art are familiar with this art. When the exhaust direction of the first exhaust hole 153 and the second exhaust hole 154 can be adjusted as needed, the first exhaust holes The horizontal exhaust direction components of 153 and each second exhaust hole 154 form a vortex rotating counterclockwise.

Next, please refer to FIG. 2C, which shows that the first-stage air disc 150A and the second-stage air disc 150B shown in FIG. 2A are combined into a spray head 150 for vapor deposition, and along the section line B-B 'A schematic representation of the cross section presented. As shown in FIG. 2C, each of the manifolds 164 connected to the main gas supply pipe 160 or the branch gas supply pipe 162 on the second-stage gas plate 150B is aligned with the first-stage gas plate 150A. In each of the first recesses 151, when the first thin film deposition mode is started, the first process gas is uniformly sprayed on the surface of the substrate through the first exhaust hole 153; the first opening 166 on the second-stage gas plate 150B The second process is aimed at the second cavity 152 located on the first-stage air plate 150A, and the second process is to be accommodated in the intake chamber 180 (as shown in FIG. 1) when the second thin film deposition mode is started. The gas 190 (as shown in FIG. 5) passes through the plasma gas dispersion plate 170 as shown in FIG. 1 to generate the plasma required for the second film deposition mode, and then passes through the first layer on the second-stage gas plate 150B. An opening 166 enters the second cavity 152, forming a plurality of matrix rows The plasma source, and then spray the plasma uniformly on the surface of the substrate 200 through the second exhaust holes 154 in each second cavity 152.

As described above, the exhaust directions of the first exhaust hole 153 and the second exhaust hole 154 are inclined at an acute angle β with respect to the normal line N1 perpendicular to the first-stage air disc 150A. In addition, in order to make the first exhaust hole 153 more efficient when spraying the first process gas, the first exhaust hole 153 may be designed as shown in FIG. 2C so that its cross-sectional area approaches the first lower surface 150A2. The distance gradually increases, so that the first exhaust holes 153 have a larger spray coverage area, and the first process gases ejected from adjacent first exhaust holes overlap each other. Similarly, the second exhaust hole 153 can also be designed by the same principle.

Next, please refer to FIG. 2D, which shows an enlarged sectional view of the plasma gas dispersion plate 170 shown in FIG. 1, which includes a first plasma gas dispersion plate 170A and a second plasma gas dispersion plate. The plate 170B and a third plasma gas dispersion plate 170C are clamped and fixed by a quartz fixing ring 178. The first plasma gas dispersion plate 170A and the third plasma gas dispersion plate 170C are both made of an insulating material (such as quartz). Made up. The first plasma gas dispersion plate 170A includes a plurality of third rows arranged at a distance from each other with a second distance d2 and having a fifth aperture r5 (between 0.5mm and 2.5mm) and penetrating the first plasma gas dispersion plate 170A. Air holes 172; the second plasma gas dispersion plate 170B is disposed below the first plasma gas dispersion plate 170A, and the second plasma gas dispersion plate 170B includes a plurality of mutually spaced arrays at a second distance d2 and having a sixth aperture r6 (Between 0.5mm and 5mm) and pass through the fourth exhaust hole 174 of the second plasma gas dispersion plate 170B, each The fourth exhaust hole 174 corresponds to each third exhaust hole 172; the third plasma gas dispersion plate 170C is provided in the second plasma gas dispersion plate 170B and the second-stage gas of the spray head 150 for vapor deposition Between the plates 150B, and the third plasma gas dispersion plate 170C includes a plurality of bias electrodes 177 arranged at a second distance d2 from each other and penetrating the third plasma gas dispersion plate 170C, and a seventh aperture r7 Of the fifth exhaust hole 176. In addition, the diameter of the third exhaust hole 172 is smaller than that of the fourth exhaust hole 174.

Next, please refer to FIG. 2E and FIG. 2E '. FIG. 2E shows a detailed cross-sectional view of the bias electrode 177 and the plasma generating portion. The bias electrode 177 includes a metal electrode 177B and dielectric layers 177A and 177C sandwiching the metal electrode 177B. As shown in FIG. 2E, when the plasma gas passes the bias electrode 177 through the fifth exhaust hole 176, a bias voltage is applied by the metal electrode 177B, and then the second-stage gas plate of the spray head 150 for vapor deposition The first opening 166 in 150B enters the second recesses 152 in the first-stage air plate 150A to form a plurality of plasma sources arranged in a matrix, and then passes through the second exhaust holes 154 in each second recess 152 Spray the plasma evenly. Figure 2E shows a cylindrical plasma generating part, whose electrode 177B is a planar electrode. In other embodiments according to the present invention, the cylindrical plasma generating portion of the planar electrode may be modified into concentric spherical upper and lower electrodes. As shown in FIG. 2E ′, the bowl-shaped plasma generating portion is at the same potential. The distance D from each point on the surface to the electrode 177B is equal. Compared to the cylindrical plasma generating part, the potential distribution is more uniform, the plasma density is more uniform, and the heat generated by the plasma reaction can be evenly dispersed. It is not easy to focus on a specific point, and it can eliminate the dead angle around the cylindrical bottom, reducing the generation of particles when the process is applied.

Next, please refer to FIG. 2F, which shows a schematic cross-sectional view of the main gas supply pipe 160 and the manifold 164 shown along the A-A 'section line of the second-stage gas disc 150B shown in FIG. 2A. As shown in FIG. 2F, in order to solve the disadvantage of uneven flow velocity of the first process gas in the main gas supply pipe 160, the main gas supply pipe 160 disclosed in the present invention The lower surface 150B2 has a first inclined pipe wall 161, so that the cross section of the main gas supply pipe 160 gradually decreases as the distance from the air inlet 165 increases. The first inclined pipe wall 161 has a plurality of air holes 163 arranged at a distance from each other at a first distance d1. The manifold 164, which is originally perpendicular to the second upper surface 150B1 and connected to the air holes 163, can be designed to include a bent portion. 164A and a curved manifold 164 'of a vertical portion 164B, wherein the curved portion 164A and the first normal N1 passing through the second upper surface 150B1 form an acute angle α, and the vertical portion 164B is perpendicular to the second upper surface 150B1. This makes it easier for the first process gas entering the main gas supply pipe 160 to flow into the bent portion 164A. In addition, a baffle block 167 may be formed on the downwind of the edge of the air hole to which the manifold 164 and / or the curved manifold 164 'are connected, so as to increase the number of inlets into the manifold 164 and / or the curved manifold 164'. One process gas flow. Similarly, the branch gas supply pipe 162 can also be designed in the above manner, and will not be described again here.

Next, please refer to FIG. 3, which shows a top view of the carrier 140 shown in FIG. 1. As shown in FIG. 3, the surface of the bearing seat 140 The substrate 200 having a thin film deposited on its surface, and the carrier 140 includes a ring-shaped gas blocking ring 145 surrounding it. In another embodiment, the gas blocking ring 145 is spaced apart from the carrier 140 by a distance. The choke ring includes a plurality of mutually spaced suction draft channels 148. The suction draft channels 148 may be disposed on the upper or lower surface of the choke ring 145 and recessed in the ring body, and each of the suction draft channels The directions of 148 all correspond to the tangential direction of the vortex airflow. In other words, the direction of each extraction channel 148 and the center of the ring of the gas blocking ring 145 have an angle to the radial direction of the circumference, so that the plasma formed by the first process gas or the second process gas is pumped. When the system is in operation, it is pulled out of the cavity 100 through the suction channel 148, thereby increasing the effect of clockwise or counterclockwise vortex caused by the first exhaust hole 153 and / or the second exhaust hole, such as As shown by two circular arrows inside the annular body in the figure, this vortex airflow flows approximately around the center of the annular body, so that the reaction gas can be more uniformly distributed in the cavity 100.

As shown in FIG. 1, the first air intake system 300 disclosed in this embodiment includes a first precursor gas supply source 310, a second precursor gas supply source 320, and a clean gas supply required for an atomic layer deposition mode. The source 330 and the first process gas conduit 125 have one end connected to the first process gas inlet 165 of the second-stage gas disc 150B, and the other end connected to a high-pressure control valve 350 and a first high-pressure pipe 315 to A first precursor gas supply source 310 and the high pressure control valve 350, a second high pressure pipe 325 is connected between the second precursor gas supply source 320 and the high pressure control valve 350, and a third high pressure pipe 335 is connected to the clean Between the gas supply source 330 and the high-pressure control valve 350. Among them, the first air intake system 300 The first precursor gas, the second precursor gas, or the clean gas is switched into the first process gas inlet 165 by controlling the high-pressure control valve 350. The clean gas may be selected from an inert gas, such as nitrogen or inert gas, which does not chemically react with the first precursor gas and the second front region gas.

Please refer to FIG. 4, which shows a schematic diagram of a process gas flow in a thin film deposition apparatus when a first thin film deposition mode is performed according to the present invention. As described above, the first thin film deposition mode disclosed in the present invention is an atomic layer deposition process. When the first thin film deposition mode is activated, the first precursor gas supply source 310 in the first intake system 300 is turned on, so that the first A precursor gas enters the first process gas conduit 125 from the first high-pressure pipe 315 through the high-pressure control valve 350, and then enters the air inlet 165 of the second-stage gas disc 150B in the spray head 150 for vapor deposition, and then passes through The main gas supply pipe 160 and the branch gas supply pipe 162, and the first precursor gas is introduced into the first cavity 151 through the manifold 164 connected to the main gas supply pipe 160 and the branch gas supply pipe 162, and then passes through each of the A first exhaust hole 153 in a first cavity 151 allows the first precursor gas to be uniformly sprayed on the surface of the substrate 200. After that, the first precursor gas supply source 310 is turned off, and then the clean gas supply source 330 is turned on, and the clean gas is introduced into the spray head 150 for vapor deposition along the third high pressure pipe 335 in the manner as described above, and by The suction pump 500 allows the residual first precursor gas and the clean gas to be drawn out of the cavity 100 through the suction pipe 550. Next, the clean gas supply source 330 is closed first, and then the second precursor gas supply source 320 is turned on, so that the second precursor gas supply source 320 guides the second precursor gas along the second high-pressure pipe 325 in the manner described above. It is sprayed into the spray head 150 for vapor deposition and sprayed on the surface of the substrate 200 to which the first precursor is attached, so that the second precursor reacts with the first precursor on the surface of the substrate 200 to form a desired thin film. Finally, the second precursor gas supply source 320 is closed first, and then the clean gas supply source 330 is turned on. The clean gas is introduced into the spray head 150 for vapor deposition along the third high-pressure pipe 335 in the manner as described above, and the extraction is turned on. The air pump 500 enables the remaining second precursor gas and the clean gas to be drawn out of the cavity 100 through the exhaust pipe 550, and the above can complete an atomic layer deposition process cycle. The number of cycles of the atomic layer deposition process described above can be repeated several times depending on the required film thickness.

As shown in FIG. 1, the second intake system 400 disclosed in this embodiment includes a second process gas supply source 410, a fourth high pressure pipe 415, and a high pressure control valve 450. By controlling the high pressure control valve 450, When the second thin film deposition mode is started, the second process gas is delivered to the second process gas conduit 115 of the intake chamber 180 through the fourth high-pressure pipe 415, and then enters the intake chamber 180.

Please refer to FIG. 5, which shows a schematic diagram of a process gas flow in a thin film deposition apparatus when the second thin film deposition mode is performed according to the present invention. As mentioned above, the second thin film deposition mode disclosed in the present invention is a plasma-assisted chemical vapor deposition process. When the second thin film deposition mode is activated, the second process gas supply source of the second intake system 400 is turned on. And the second process gas is controlled by the high-pressure control valve 450, enters the second process gas conduit 115 through the fourth high-pressure pipe 415, and is input into the intake chamber 180. The second process gas 190 entering the intake chamber 180 first passes through the first plasma gas dispersion plate 170A through the third exhaust hole 172, and then passes through The fourth exhaust hole 174 passes through the second plasma gas dispersion plate 170B, then enters the fifth exhaust hole 176 of the third plasma gas dispersion plate 170C, and is biased by the bias electrode 177. Next, through the first opening 166 in the second-stage air plate 150B of the spray head 150 for vapor deposition, it enters the second cavity 152 in the first-stage air plate 150A to form a plurality of plasma sources arranged in a matrix. Then, the plasma is uniformly sprayed on the surface of the substrate 200 through the second exhaust holes 154 in each second cavity 152 to form a desired plasma-assisted chemical vapor deposition film. The second process gas in this embodiment includes, for example, one of silane, argon, hydrogen, and oxygen, or a combination thereof.

6A and 6B are schematic structural diagrams of steps in forming a semiconductor device using the thin film deposition apparatus of the present invention according to an embodiment.

Please refer to FIG. 6A first. A method for forming a semiconductor device includes providing a semiconductor substrate 10, forming an epitaxial stack 1000 on the semiconductor substrate 10, and sequentially including a semiconductor substrate 10, a buffer layer 20, and a first semiconductor layer. 30. An active layer 40 and a second semiconductor layer 600. In this embodiment, the first semiconductor layer 30 includes an n-type gallium nitride layer (n-GaN), the second semiconductor layer 600 includes a p-type gallium nitride layer (p-GaN), and the active layer 40 includes a gallium nitride series. Multiple Quantum Well (MQW) structures formed by the materials used to emit light. Then, the thin film deposition apparatus 100 of the present invention is used to deposit a metal layer 620 with a thickness of 1 to 10 nm in a first thin film deposition mode on the surface of the second semiconductor layer 600, such as the aforementioned atomic layer deposition (ALD) method. The layer 620 is in ohmic contact with the second semiconductor layer 600. The material of this metal layer 620 is optional From copper, foil or nickel. Then, the thin film deposition apparatus of the present invention is used in a second thin film deposition mode, such as the aforementioned plasma-assisted chemical vapor deposition (PECVD) method, at a temperature lower than 350 ° C on the surface of the metal layer 620. A graphene layer 640 having a thickness of 1 to 5 nm is deposited to form a composite current diffusion layer including a metal layer 620 and a graphene layer 640, wherein the metal layer 620 and the graphene layer 640 are in ohmic contact to improve lateral current spread Ability.

Next, referring to FIG. 6B, the thin film deposition uses a conventional lithography and etching process to remove a portion of the metal layer 620, the graphene layer 640, the second semiconductor layer 600, and the active layer 40 to expose the first semiconductor layer 30, and then A first electrode 61 and a second electrode 62 are respectively formed on the graphene layer 640 and the exposed first semiconductor layer 30 to introduce external current.

7A to 7C are structural schematic diagrams of each step of forming a semiconductor element by using the thin film deposition apparatus of the present invention in another embodiment.

Please refer to FIG. 7A first. A method for forming a semiconductor device includes providing a semiconductor substrate 10, forming an epitaxial stack 1000 on the semiconductor substrate 10, and sequentially including a buffer layer 20, a first semiconductor layer 30, and an active layer. 40 and a second semiconductor layer 600. In this embodiment, the first semiconductor layer 30 includes an n-GaN layer, and the active layer 40 includes a multiple quantum well (MQW) structure formed of a gallium nitride series material. Light is emitted, and the second semiconductor layer 600 includes a p-type gallium nitride layer (p-GaN). Then, the thin film deposition apparatus 100 of the present invention is used to A thin film deposition mode is, for example, the aforementioned atomic layer deposition (ALD) method to deposit a metal layer 620 with a thickness of 1-10 nm. The material of the metal layer 620 may be selected from copper, foil or nickel.

Secondly, please refer to FIG. 7B, and then use the thin film deposition apparatus of the present invention in a second thin film deposition mode, such as the aforementioned plasma-assisted chemical vapor deposition (PECVD) method, at a temperature of about 700 to 1000 degrees C. Under conditions, carbon atoms penetrate the metal layer 620 to reach the surface of the second semiconductor layer 600, and a graphene layer 650 having a thickness of 1 to 5 nm is formed between the second semiconductor layer 600 and the metal layer 620. Among them, graphite The olefin layer 650 makes an ohmic contact with the second semiconductor layer 600.

Finally, referring to FIG. 7C, the metal layer 620 is removed by an etching process, and the graphene layer 650 is exposed to form a transparent current diffusion layer to improve the ability of lateral current spreading. Next, using a conventional lithography and etching process, a part of the graphene layer 650, the second semiconductor layer 600, and the active layer 40 are removed to expose the first semiconductor layer 30, and then the graphene layer 650 and the exposed first A first electrode 61 and a second electrode 62 are formed on the semiconductor layer 30 to introduce external current.

In summary, the embodiments of the present invention have provided a spray head suitable for atomic layer deposition and plasma-assisted chemical vapor deposition, and a thin film deposition device containing the spray head, which can switch different deposition modes in the same cavity as needed. The thin film deposition process solves the disadvantage that the existing thin film deposition processes of different modes cannot be in the same cavity.

Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can change and combine the above various implementations without departing from the spirit and scope of the present invention. example.

Claims (10)

A spraying head for thin film deposition includes: an upper surface and a lower surface opposite to the upper surface; a plurality of first exhaust holes are located on the lower surface; an air inlet for a first process gas to pass through the inlet A gas port is delivered to the first exhaust holes; a main gas supply pipe is connected between the air inlet and the first exhaust holes; and a plurality of branch gas supply pipes, the branch gas supply pipes They are spaced from each other and connected to the main gas supply pipes respectively, so that the first process gas can be sprayed out of the first exhaust holes through the main gas supply pipe and the branch gas supply pipes, wherein the first row An exhaust direction of one of the air holes is inclined at an acute angle β with respect to a normal line of the lower surface. The spray head for film deposition according to item 1 of the scope of patent application, further comprising: a first-stage air plate having a first upper surface and a first lower surface opposite to each other, and the first-stage air plate includes : A plurality of first cavities with a first aperture are arranged at a first distance from each other and are formed on the first upper surface, and each of the first cavities includes a first cavity that penetrates the first lower surface and has a The first exhaust hole with two holes. The spray head for film deposition according to item 2 of the scope of the patent application, further comprising: a second-stage air plate, which is disposed above the first-stage air plate and has a second upper surface and a second opposite surface. The lower surface, and the second-stage air plate includes the air inlet and the gas supply pipe. The spray head for thin film deposition as described in item 1 of the scope of patent application, wherein 30 ° ≦ β ≦ 60 °. The spray head for thin film deposition as described in item 1 of the scope of the patent application, wherein an exhaust direction of the first process gas sprayed through a first exhaust hole has a horizontal component parallel to the lower surface. According to the sprinkler head for thin film deposition described in item 1 of the scope of patent application, wherein the first exhaust hole spraying the first process gas forms a connection with the center of the lower surface, and the horizontal component is perpendicular to the Connected. A thin film deposition device includes: a cavity; a support seat disposed in the cavity to carry a substrate; and a spray head selected from the group of sprinkler heads for thin film deposition described in claims 1 to 6 First, it is arranged above the bearing seat in the cavity. The thin film deposition device according to item 7 of the scope of the patent application, further includes a gas blocking ring formed on the bearing seat, and a plurality of extraction channels are formed on the gas blocking ring. The thin film deposition apparatus according to item 8 of the application, wherein the first process gas sprayed forms a vortex airflow. According to the thin film deposition device described in item 9 of the scope of the patent application, the direction of each of the extraction flow channels corresponds to all the line directions of the vortex airflow.