CN217438298U - Epitaxial growth equipment - Google Patents

Abstract

An epitaxial growth equipment includes a cavity, a gas shower head and a carrier plate. The gas nozzle is arranged on a top of the cavity, and the gas nozzle includes an annular air injection part, a central air injection part located in the annular air injection part, and an annular air extraction part located between the annular air injection part and the central air injection part . The carrier plate is disposed in the cavity and under the gas shower head, and the carrier plate is configured to carry a substrate to be grown epitaxially.

Description

A kind of epitaxial growth equipment

technical field

The utility model relates to a semiconductor manufacturing equipment, in particular to an epitaxial growth equipment.

Background technique

Epitaxy is one of the common technologies used in the manufacture of semiconductor devices, which is to grow or deposit new crystals on the original wafer to obtain a new semiconductor layer. Epitaxy technology can be used to manufacture various semiconductor components, especially wafers for compound semiconductors. Common epitaxy techniques include Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD), wherein chemical vapor deposition is to deposit thin films on substrates through chemical reactions of process gases.

For chemical vapor deposition, a variety of by-products (or waste gas) will be produced during the chemical reaction and affect the epitaxial growth. The conventional treatment method is to use an air extraction device to extract these by-products from the reaction chamber. For example, in China Taiwan Invention Patent Publication No. TW I746222B, TWI480417B and China Taiwan Patent Publication No. TW202104650A. However, it is still difficult for the conventional epitaxial growth equipment to effectively remove these by-products, resulting in these by-products remaining or diffusing into the reaction zone and affecting the quality of the epitaxial growth. Therefore, how to effectively remove the by-products generated by the chemical reaction of the process gas in the epitaxial growth equipment is a problem to be solved by those skilled in the art.

Utility model content

The main purpose of the present invention is to solve the problem that the conventional semiconductor epitaxy equipment has poor efficiency in removing waste gas and by-products.

In order to achieve the above purpose, the present invention provides an epitaxial growth equipment, which includes a cavity, a gas shower head and a carrier plate. The gas nozzle is arranged on a top of the cavity, and the gas nozzle includes an annular air injection part, a central air injection part located in the annular air injection part, and an annular air extraction part located between the annular air injection part and the central air injection part . The carrier plate is arranged in the cavity and under the gas shower head, and the carrier plate is configured to carry a substrate to be grown epitaxially. Wherein, the annular air jet portion provides a downward annular gas curtain, the central jet portion provides a downward process gas, and the cavity defines an epitaxial growth region and an epitaxial growth region corresponding to the annular gas curtain and the process gas a growth region, and the annular evacuation part evacuates the epitaxial growth region between the annular ejection part and the central ejection part, so as to evacuate the exhaust gas during epitaxial growth of the substrate from the epitaxial growth region.

In one embodiment, the epitaxial growth apparatus further includes a heater disposed in the cavity and under the carrier plate.

In one embodiment, the epitaxial growth apparatus further includes a vacuum evacuation device, and the vacuum evacuation device is connected to the cavity.

In one embodiment, the central air injection part and the annular air injection part respectively include a plurality of air injection holes, and the annular air extraction part includes a plurality of air extraction holes.

Accordingly, the epitaxial growth equipment of the present invention utilizes the central gas jet to supply the process gas, and supplies the annular gas curtain through the annular gas jet to increase the time and concentration of the process gas staying in the epitaxial growth zone, thereby increasing the The quality of the epitaxial is finally extracted from the epitaxial growth area by the by-products generated after the process gas is chemically reacted by the annular pumping part. The annular evacuation portion itself is disposed between the central ejection portion and the annular ejection portion, and corresponds to the epitaxial growth region, which can greatly increase the evacuation efficiency. Therefore, the epitaxial growth apparatus of the present invention can effectively extract by-products out of the cavity before the by-products are scattered to the non-epitaxial growth region, thereby providing a cleaner deposition environment for the substrate.

Description of drawings

FIG. 1 is a schematic structural diagram of an embodiment of the present utility model;

2 is a schematic bottom view of a gas shower head according to an embodiment of the present invention;

3A to 3C are schematic diagrams of gas flow of a gas shower head according to an embodiment of the present invention.

【Symbol Description】

10: Cavity

11: Epitaxial growth area

12: Non-epitaxy growth area

20: Gas nozzle

21: Central jet department

211: Blowhole

22: Annular suction part

221: exhaust hole

23: Ring jet

231: Blowhole

21a: Process gases

22a: Extraction airflow

23a: Ring Air Curtain

30: Carrier plate

40: Heater

50: Vacuum extraction device

51: Exhaust pipeline

60: Substrate

Detailed ways

The terminology used herein is for the purpose of illustrating particular embodiments only and not for the purpose of limiting the present invention. As used herein, the singular forms "a" and "the" may also include the plural forms unless the context dictates otherwise.

Directional terms used herein, such as up, down, left, right, front, back, and derivatives or synonyms thereof, refer to the orientation of elements in the drawings and do not limit the invention unless the context clearly dictates otherwise. The detailed description and technical content of the present utility model are described as follows in conjunction with the drawings:

Referring to FIG. 1 , the present invention discloses an epitaxial growth apparatus including a cavity 10 , a gas shower head 20 , a carrier plate 30 , a heater 40 and a vacuum evacuation device 50 . The gas shower head 20 is disposed in the cavity 10 and is located at a top of the cavity 10 . The gas shower head 20 includes a central air injection part 21 , an annular air extraction part 22 and an annular air injection part 23 . The central air injection part 21 Located in the annular air ejection portion 23 , the annular air extraction portion 22 is located between the annular air ejected portion 23 and the central air ejected portion 21 .

As shown in FIG. 2 , which is a schematic bottom view of a gas shower head according to an embodiment of the present invention, from a center of the gas shower head 20 outwards are the central air ejecting portion 21 , the annular air extraction portion 22 and the annular air ejecting portion in sequence. twenty three. The central air injection part 21 and the annular air injection part 23 have a plurality of air injection holes 211 and 231 respectively, and the annular air extraction part 22 has a plurality of air extraction holes 221 . The air injection holes 211 of the central air injection part 21 are arranged in a circular pattern, the air extraction holes 221 of the annular air extraction part 22 are arranged in a first annular pattern, and the air injection holes 231 of the annular air injection part 23 are arranged in a circular pattern. The arrangement distribution is a second annular pattern. In some embodiments, the air injection holes 211 of the central air injection part 21 can also be arranged in a circular array, a rectangular array or arranged in other patterns. The air extraction holes 221 of the annular air extraction portion 22 and the air injection holes 231 of the annular air injection portion 23 may be arranged at equal or unequal intervals.

Returning to FIG. 1 , the carrier plate 30 is disposed in the cavity 10 and below the gas showerhead 20 , and the carrier plate 30 carries a substrate 60 to be epitaxially grown. The heater 40 is disposed in the cavity 10 and below the carrier plate 30 for heating the substrate 60 . The vacuum evacuation device 50 is disposed outside the cavity 10 and is connected to the cavity 10 through an evacuation pipeline 51 . The vacuum evacuation device 50 evacuates the cavity 10 to make the inside of the cavity 10 before the process starts. form a vacuum state.

An epitaxial growth region 11 is correspondingly defined below the central gas jet portion 21 , and an a-epitaxial growth region 12 is located outside the epitaxial growth region 11 . The central gas jet portion 21 provides a downward blowing process gas 21 a (as shown in FIG. 3A), the process gas 21a is configured to cover the substrate 60 or a central area of the substrate 60 according to different processes. The annular air jet 23 provides a downward blowing annular air curtain 23 a (as shown in FIG. 3B ). The annular air curtain 23 a is configured to cover an outer ring area of the substrate 60 or outside the substrate 60 according to different processes an outer ring area. The annular gas curtain 23a can be used as an annular barrier to prevent the process gas 21a from escaping outward, and can also prevent external contaminants or impurities from entering the epitaxial growth region 11 .

In the present invention, the annular air ejecting portion 22, the annular air ejecting portion 23 and the central air ejecting portion 21 are jointly disposed on the gas shower head 20 and located above the base plate 60, thereby providing an upward air air 22a ( as shown in Figure 3C). And from the perspective of the plane configuration, the annular air extraction part 22 is located between the annular air injection part 23 and the central air injection part 21, so that the annular air extraction part 22 is directly adjacent to the central air injection part 21, rather than located in the central air injection part 21. out of the annular gas jet portion 23 , so as to more efficiently extract by-products or exhaust gas produced by the chemical reaction of the process gas 21 a . On the other hand, the present invention adopts the top suction method to use the suction airflow 22a to extract by-products or waste gas; unlike the side suction method, the by-products or waste gas generated by the epitaxial growth zone 11 need to pass through Only the annular air curtain 23a can be pulled away, the efficiency is poor, and the airflow structure of the annular air curtain 23a will be damaged. In addition, since the annular air extraction portion 22, the annular air ejected portion 23 and the central air ejected portion 21 are commonly located above the substrate 60, the air extraction airflow 22a and the annular air curtain 23a and the process gas 21a are opposite to each other, The exhaust gas flow 22a has little effect on the annular air curtain 23a and the gas flow of the process gas 21a, which can ensure that each gas flow performs its own function in the epitaxial process.

Further, the central air jet 21 blows the process gas 21a downward toward the substrate 60, and the process gas 21a may be silane vapor (SiH ₄ ), a mixture of silane vapor (SiH ₄ ) and oxygen (O ₂ ), silane Mixtures of vapor ( _SiH4 ) and ammonia ( _NH3 ), metal halides (eg _WF6 ) or mixtures of metal halides and hydrogen. At the same time, the annular air jet portion 23 provides the annular air curtain 23a blown downward, and generates a boundary layer to prevent the process gas 21a from escaping outward. The annular air curtain 23a may be an inert gas. Inert gases include, but are not limited to, nitrogen, helium, or argon, and the like.

In detail, the cavity 10 defines the epitaxial growth region 11 corresponding to the process gas 21a, the cavity 10 defines the non-epitaxial growth region 12 corresponding to the annular gas curtain 23a, and the process gas 21a is in the The epitaxial growth region 11 produces chemical reaction and is deposited on the substrate 60, and the annular gas curtain 23a can prevent the process gas 21a from flowing out of the epitaxial growth region 11 to the non-epitaxial growth region 12, so as to improve the process gas 21a The time and concentration of staying in the epitaxial growth region 11 enable the process gas 21a to sufficiently generate chemical reaction and deposit on the surface of the substrate 60, which can effectively improve the quality and uniformity of epitaxial growth.

During the chemical reaction of the process gas 21a in the epitaxial growth zone 11, a by-product after the chemical reaction (eg waste gas, the process gas 21a that has not been fully reacted) will be generated. The epitaxial growth region 11 will affect the uniformity and effectiveness of the deposition of the process gas 21 a on the substrate 60 . Therefore, while the central gas jet 21 provides the process gas 21a blown downward and the annular gas jet 23 provides the annular gas curtain 23a blown downward, the annular gas extraction portion 22 performs the process gas flow on the epitaxial growth zone 11. The by-products generated during the epitaxial growth of the substrate 60 are extracted from the epitaxial growth region 11 by gas extraction, so as to prevent the by-products from affecting the uniformity and effectiveness of the deposition of the process gas 21 a on the substrate 60 . On the other hand, the annular evacuation portion 22 is located in the non-epitaxy growth region 12 and is disposed between the central air ejection portion 21 and the annular air ejection portion 23 , so the by-products are diffused outward to the non-epitaxy portion 23 . Before the epitaxial growth region 12 , the epitaxial growth region 11 can be effectively evacuated from the epitaxial growth region 11 by the annular evacuation portion 22 . In other words, the by-products can be effectively prevented from flowing back to the epitaxial growth region 11 or being scattered to other regions of the cavity 10 through the arrangement of the annular air extraction portion 22 .

To sum up, the epitaxial growth equipment of the present invention is arranged above the carrier plate and the substrate through the annular air extraction part, which provides the air extraction airflow in the vertical direction. Between the sections, the pumping gas flow can thus contact the epitaxial growth region to pump by-products or exhaust gases directly upwards from the epitaxial growth region. Compared with this, the conventional technology is to extract from the outside of the air curtain, and by-products or exhaust gas need to pass through the air curtain. In addition to destroying the airflow structure of the air curtain, the by-products or exhaust gas may also be blocked and cannot be effective. taken away. Therefore, the annular air extraction part of the present invention can more efficiently and quickly extract the by-products or waste gas produced by the chemical reaction of the process gas from the epitaxial growth area without any arbitrary diffusion with the gas flow in the epitaxial growth area. , and will not drift out of the non-epitaxy growth area and pollute the environment in the cavity.

Claims (4)

1. an epitaxial growth equipment, is characterized in that, comprises: a cavity; A gas nozzle is arranged on a top of the cavity, and the gas nozzle includes an annular air injection part, a central air injection part located in the annular air injection part, and an annular suction part located between the annular air injection part and the central air injection part Department; and a carrying tray, disposed in the cavity and under the gas shower head, the carrying tray is configured to carry a substrate to be grown epitaxially; Wherein, the annular air jet portion provides a downward annular gas curtain, the central jet portion provides a downward process gas, and the cavity defines an epitaxial growth region and an epitaxial growth region corresponding to the annular gas curtain and the process gas a growth region, and the annular evacuation part evacuates the epitaxial growth region between the annular ejection part and the central ejection part, so as to evacuate the exhaust gas during epitaxial growth of the substrate from the epitaxial growth region. 2 . The epitaxial growth apparatus according to claim 1 , further comprising a heater, and the heater is disposed in the cavity and under the carrier plate. 3 . 3 . The epitaxial growth apparatus according to claim 1 , further comprising a vacuum evacuation device, and the vacuum evacuation device is connected to the cavity. 4 . 4 . The epitaxial growth apparatus according to claim 1 , wherein the central air injection part and the annular air injection part respectively comprise a plurality of air injection holes, and the annular air extraction part comprises a plurality of air extraction holes. 5 .

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