TWI652372B - Semiconductor light-emitting device and the method thereof - Google Patents

Abstract

The present invention provides a method of forming a semiconductor light emitting device comprising providing a substrate, forming an epitaxial layer on the substrate, forming a metal layer on the epitaxial layer in a first deposition mode, and a second deposition The pattern forms a transparent conductive layer on the metal layer, wherein the first deposition mode and the second deposition mode are performed in the same cavity.

Description

Semiconductor light emitting device and method of forming same

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a showerhead for film deposition and a film deposition apparatus including a showerhead, and more particularly to a multi-mode showerhead and a multi-mode thin film deposition apparatus.

In the conventional fabrication of thin film light-emitting diodes, Molecular Beam Epitaxy (MBE), Chemical Vapor Deposition (CVD), and Plasma Enhanced Chemical Vapor Deposition (Plasma Enhanced Chemical) can be used. Vapor Deposition; PECVD), Atomic Layer Epitaxy (ALE) or Atomic Layer Deposition (ALD) to grow various films required to form a light-emitting diode. Among them, the use of an atomic layer deposition process and a plasma-assisted chemical vapor deposition process to grow various films required to form a light-emitting diode has gradually become a trend.

For the current process technology, the atomic layer deposition process and the plasma-assisted chemical vapor deposition process belong to two different process chambers, which not only has high equipment cost, but also does not complete the packaged light during the component transfer process. The polar components are exposed to the environment, resulting in a reduction in film quality.

A method of forming a semiconductor light emitting device, comprising: providing a substrate, forming an epitaxial layer on the substrate, forming a metal layer on the epitaxial layer in a first deposition mode, and forming a second deposition mode A transparent conductive layer is on the metal layer, wherein the first deposition mode and the second deposition mode are completed in the same cavity.

The manner of making and using the embodiments of the present invention will be described in detail below. It is to be noted that the present invention provides many inventive concepts that can be applied in various specific forms. The specific embodiments discussed herein are merely illustrative of specific ways of making and using the invention, and are not intended to limit the scope of the invention. Example:

First, referring to Fig. 1, there is shown a schematic cross-sectional view of a thin film deposition apparatus according to the present invention. As shown in FIG. 1, a thin film deposition apparatus according to the present invention includes a cavity 900 which is formed by a lower cavity 120, an upper cavity 110 above the upper cavity 110, and a fixing device 130 located in the lower cavity. Between 120 and the upper cavity 110, the lower cavity 120 and the upper cavity 110 are connected and fixed. The upper cavity 110 comprises an upper cavity upper part 110A and an upper cavity lower part 110B. The cavity 900 includes a carrier 140 disposed in the lower cavity 120 for carrying a substrate 200, a plasma generating system disposed above the carrier 140 and located in the upper cavity upper component 110A, including An inlet chamber 180 and a plasma gas dispersion tray 170. Furthermore, the thin film deposition apparatus according to the present invention further includes a first intake system 300 adapted to provide a first process gas required for a first thin film deposition mode; and a second intake system 400 coupled to the plasma A generating system adapted to provide a second process gas required for a second thin film deposition mode. The cavity 900 further includes a vapor deposition shower head 150, which includes a first-order air disk 150A and a second-order air disk 150B disposed under the upper cavity between the carrier 140 and the plasma generating system. Inside component 110B.

Next, referring to FIG. 2A, there is shown a plan view of the first-order air disc 150A and the second-stage air disc 150B of the sprinkler head 150 for vapor deposition as shown in FIG. 1. As shown in FIG. 2A, the first-order air disk 150A has a first first upper surface 150A1 and a first lower surface 150A2, and includes a plurality of first concaves having a first aperture r1 (between 3 mm and 9 mm). The holes 151 are formed on the first upper surface 150A1 at a distance from each other by a first distance d1, and each of the first recesses 151 includes a first exhaust hole 153 extending through the first air plate 150A to the first lower surface 150A2. a second aperture r2 (between 0.5 mm and 2.5 mm); and a plurality of second pockets 152 having a third aperture r3 (between 5 mm and 15 mm) spaced apart from each other by a second distance d2 Formed on the first upper surface 150A1, and each of the second recesses 152 includes a second exhaust hole 154 extending through the first air plate 150A to the first lower surface 150A2 and having a fourth aperture r4 (between 0.5 mm and 2.5) Between mm). Wherein, the first recess 151 and the second recess 152 are staggered with each other.

Similarly, as shown in FIG. 2A, the second-order air disk 150B has a second upper surface 150B1 and a second lower surface 150B2, and the second-stage air disk 150B includes a first process gas inlet 165. Connected to a first air intake system 300 (as shown in FIG. 1) to introduce a first process gas when the first thin film deposition mode is activated. The second-stage air disk 150B further includes a main gas supply pipe 160, and is connected to the first process gas inlet 165 and disposed on the second-order gas disk 150B, and a plurality of branch gas supply pipes 162 spaced apart from each other, respectively The gas supply pipe 160 is connected to and disposed on the second-stage gas disk 150B, and a plurality of manifolds 164 are formed on the main gas supply pipe 160 and the branch gas supply pipe 162. The manifolds 164 are spaced apart from each other by a first distance d1 and penetrate through each other. The second order air plate 150B to the second lower surface 150B2, and each manifold 164 corresponds to each of the first pockets 151 on the first order air plate 150A. When the first thin mode deposition mode is activated, in the atomic layer deposition mode in this embodiment, the first process gas enters the main gas supply pipe 160 and the branch gas supply pipe 162 through the first process gas inlet 165, and then is connected. The manifold 164 of the main gas supply pipe 160 and the branch gas supply pipe 162 is introduced into the first pocket 151, and then uniformly sprayed onto the surface of the substrate 200 through the first exhaust hole 153 in each of the first pockets 151.

In addition, the second-order air disc second-stage air disc 150B further includes a plurality of first openings 166 formed in a region other than the main gas supply pipe 160 and the branch gas supply pipe 162, and the first openings 166 are mutually mutually connected by the second distance d2. The first array of openings 164 extends through the second upper surface 150B1 and the second lower surface 150B2, and each of the first openings 166 corresponds to each of the second recesses 152 on the first stepped disk 150A, and the plurality of first openings 166 correspond to The plurality of second recesses 152 form a plurality of matrix-arrayed plasma generating portions. When the second thin film deposition mode is activated, the plasma may be generated in the plurality of plasma generating portions and passed through each of the second recesses 152. The second exhaust hole 154 uniformly sprays the plasma onto the surface of the substrate 200.

Next, please refer to FIG. 2B, which shows that the first-order air disc 150A and the second-order air disc 150B as shown in FIG. 2A are combined into a vapor deposition head 150, and along the section line B-B. 'The schematic diagram of the profile presented. As shown in FIG. 2B, the respective manifolds 164 of the main gas supply pipe 160 or the branch gas supply pipe 162 connected to the second-stage gas disk 150B are aligned to extend into the first-order gas disk 150A. In each of the first recesses 151, when the first thin film deposition mode is activated, the first process gas is uniformly sprayed on the substrate surface via the first exhaust hole 153; the first opening 166 located on the second-order air disk 150B is Aligned with the second pocket 152 located on the first-order disc 150A, and when the second thin film deposition mode is activated, the second process gas contained in the inlet chamber 180 (as shown in FIG. 1) is 190 (as shown in FIG. 5), through the plasma gas dispersing disc 170 as shown in FIG. 1, entering a plurality of first openings 166 and corresponding plurality of second recesses 152 to form a plurality of matrix-arranged plasmas a generating portion that generates a plasma required for the second thin film deposition mode in the plasma generating portion of the plurality of matrix arrays, and then uniformly sprays the plasma onto the substrate through the second exhaust hole 154 in each of the second recesses 152 200 surface.

As shown in FIG. 2C, there is shown a cross-sectional enlarged view of the plasma gas dispersion disk 170 as shown in FIG. 1, which includes a first plasma gas dispersion disk 170A, a second plasma gas dispersion disk 170B, and A third plasma gas dispersion disk 170C is sandwiched and fixed by a quartz fixing ring 178, wherein the first plasma gas dispersion disk 170A and the third plasma gas dispersion disk 170C are each made of an insulating material such as quartz. The first plasma gas dispersion disk 170A includes a plurality of third rows arranged at a second distance d2 and spaced apart from each other and having a fifth aperture r5 (between 0.5 mm and 2.5 mm) and penetrating through the first plasma gas dispersion disk 170A. The air hole 172; the second plasma gas dispersing disc 170B is disposed under the first plasma gas dispersing disc 170A, and the second plasma gas dispersing disc 170B includes a plurality of second holes d2 spaced apart from each other and having a sixth aperture R6 (between 0.5 mm and 5 mm) and penetrating through the fourth exhaust hole 174 of the second plasma gas dispersing disc 170B, each fourth exhaust hole 174 corresponding to each of the third exhaust holes 172; The plasma gas dispersion disk 170C is disposed between the second plasma gas dispersion disk 170B and the second-order gas disk 150B of the vapor deposition head 150, and the third plasma gas dispersion disk 170C includes a plurality of The distance d2 is spaced apart from each other and penetrates the bias electrode 177 of the plasma gas dispersion disk, and is internally provided with a fifth vent hole 176 having a seventh aperture r7. Further, the diameter of the third exhaust hole 172 is smaller than the diameter of the fourth exhaust hole 174.

Next, please refer to the 2D and 2D' drawings. 2D is a detailed cross-sectional view of the bias electrode 177 and the plasma generating portion, wherein the bias electrode 177 includes a metal electrode 177B and an electrically insulating dielectric layer 177A for sandwiching the metal electrode 177B. 177C. As shown in FIG. 2D, the metal electrode 177B is externally connected to a voltage source (not shown). The first-order air disk 150A and the second-order air disk 150B are made of a metal material and grounded, and the electrically insulating dielectric layer 177C is used. Electrically insulated from the metal electrode 177B, when the second process gas enters the first opening 166 and the plasma generating portion corresponding to the second recess 152 through the fifth exhaust hole 176, the metal electrode 177B of the external voltage source is grounded A bias voltage provided by the first-order air disk 150A and the second-order air disk 150B forms a plasma for the second process gas, and then uniformly sprays the plasma through the second exhaust hole 154 in each of the second recesses 152. come out. Fig. 2D shows a cylindrical plasma generating portion whose electrode 177B is a planar electrode. In other embodiments according to the present invention, the cylindrical plasma generating portion of the planar electrode may be modified to be a concentric spherical upper and lower electrode, as shown in FIG. 2D', and the bowl-shaped plasma generating portion is formed at the same potential. The distance D from each point on the surface to the electrode 177B is equal, and has a relatively uniform potential distribution compared with the cylindrical plasma generating portion, and the plasma density is relatively uniform, and the heat generated by the plasma reaction can be uniformly dispersed, and it is difficult to concentrate on a specific point. It can eliminate the dead angle around the bottom of the cylinder and reduce the generation of particles during process application.

As shown in FIG. 1, the first air intake system 300 disclosed in this embodiment includes a first precursor gas supply source 310, a second precursor gas supply source 320, and a clean gas supply required for the atomic layer deposition mode. The source 330 and the first process gas conduit 125 are connected at one end to the first process gas inlet 165 of the second-stage gas disk 150B, and the other phase is connected to a high-pressure control valve 350 and a first high-pressure pipe 315. Between the first precursor gas supply source 310 and the high pressure control valve 350, a second high pressure pipe 325, connected between the second precursor gas supply source 320 and the high pressure control valve 350, and a third high pressure pipe 335, It is connected between the clean gas supply source 330 and the high pressure control valve 350. Wherein, the first intake system 300 switches the first precursor gas, the second precursor gas or the clean gas supply into the first process gas inlet 165 by controlling the high pressure control valve 350. The clean gas may be selected from inert gases that do not chemically react with the first precursor gas and the second precursor gas, such as nitrogen or blunt gas.

Next, please refer to FIG. 3, which is a schematic view showing the flow of the first process gas in the thin film deposition apparatus when the first thin film deposition mode is performed according to the present invention. As described above, the first thin film deposition mode disclosed by the present invention is an atomic layer deposition process, and when the first thin film deposition mode is activated, the first precursor gas supply source 310 in the first intake system 300 is turned on, so that A precursor gas enters the first process gas conduit 125 from the first high pressure pipe 315 via the high pressure control valve 350, and then enters the gas inlet 165 of the second stage gas disk 150B in the vapor deposition head 150, and then passes through The main gas supply pipe 160 and the branch gas supply pipe 162, and introduce the first precursor gas into the first pocket 151 by the manifold 164 connected to the main gas supply pipe 160 and the branch gas supply pipe 162, and then pass each The first exhaust hole 153 in the first recess 151 causes the first precursor gas to be uniformly sprayed on the surface of the substrate 200. Thereafter, the first precursor gas supply source 310 is turned off, and then the clean gas supply source 330 is turned on, and the clean gas is introduced into the vapor deposition head 150 along the third high pressure pipe 335 in the manner described above, by pumping The air pump 500 causes the residual first precursor gas and the clean gas to be drawn out of the cavity 900 via the exhaust pipe 550. Next, the clean gas supply source 330 is turned off, then the second precursor gas supply source 320 is turned on, and the second precursor gas supply source 320 is introduced into the gas along the second high pressure pipe 325 in the manner described above. The shower head 150 for phase deposition is sprayed on the surface of the substrate 200 to which the first precursor is attached, and the second precursor is reacted with the first precursor on the surface of the substrate 200 to form a desired film. Finally, the second precursor gas supply source 320 is turned off, and then the clean gas supply source 330 is turned on, and the clean gas is introduced into the vapor deposition head 150 for vapor deposition along the third high pressure pipe 335 in the manner as described above. The air pump 500 causes the residual second precursor gas and the clean gas to be drawn out of the cavity 900 via the exhaust pipe 550, and an atomic layer deposition process cycle can be completed. The number of atomic layer deposition process cycles described above can be repeated multiple times depending on the desired film thickness.

As shown in FIG. 1 , the second intake system 400 disclosed in this embodiment includes a second process gas supply source 410 , a fourth high pressure pipe 415 , and a high pressure control valve 450 . By controlling the high pressure control valve 450 , The second process gas is delivered to the second process gas conduit 115 of the inlet chamber 180 via the fourth high pressure pipe 415 when the second thin film deposition mode is activated, and then enters the intake chamber 180.

Next, please refer to Fig. 4, which is a schematic view showing the flow of process gas in the thin film deposition apparatus in the second thin film deposition mode according to the present invention. As described above, the second thin film deposition mode disclosed by the present invention is a plasma assisted chemical vapor deposition process, and when the second thin film deposition mode is activated, the second process gas supply source of the second intake system 400 is turned on, And the second process gas enters the second process gas conduit 115 via the fourth high pressure pipe 415 under the control of the high pressure control valve 450, and is input into the intake chamber 180. The second process gas 190 entering the intake chamber 180 passes through the first plasma gas dispersion disk 170A through the third exhaust hole 172, and then passes through the second plasma gas dispersion disk 170B through the fourth exhaust hole 174, and then passes through the first The fifth venting opening 176 of the three-plasma gas dispersing disc 170C enters the plurality of first openings 166 and the corresponding plurality of second recesses 152 to form a plurality of matrix-arranged plasma generating portions, and the plasma is arranged in a plurality of matrices. The plasma required for the second thin film deposition mode is generated in the generating portion, and then the plasma is evenly sprayed on the surface of the substrate 200 through the second exhaust hole 154 in each of the second recesses 152 to form a desired plasma assisting. Chemical vapor deposited film. The second process gas of the present embodiment includes, for example, one of silane, argon, hydrogen, oxygen, or a combination thereof.

5A and 5B are views showing the structure of each step of forming a semiconductor element by using the thin film deposition apparatus of one embodiment of the present invention.

Referring to FIG. 5A, a method of forming a semiconductor device includes providing a semiconductor substrate 10, and forming an epitaxial layer 1000 on the semiconductor substrate 10, including a semiconductor substrate 10, a buffer layer 20, and a first semiconductor layer. 30. An active layer 40 and a second semiconductor layer 600. In this embodiment, the first semiconductor layer 30 includes an n-type gallium nitride layer (n-GaN), the active layer 40 includes a stack of materials of a gallium nitride series, and the active layer 40 comprises a material of a gallium nitride series. A multiple quantum well structure (MQW) is used to emit light, and a second semiconductor layer 600 includes a p-type gallium nitride layer (p-GaN). Then, using the thin film deposition apparatus 100 of the present invention, a metal layer 620 having a thickness of 1 to 10 nm is deposited on the surface of the second semiconductor layer 600 in a first thin film deposition mode, for example, the aforementioned atomic layer deposition method (ALD), wherein the metal Layer 620 is in ohmic contact with second semiconductor layer 600. The material of the metal layer 620 can be selected from copper, foil or nickel. Then, using the thin film deposition apparatus of the present invention in a second thin film deposition mode, for example, the aforementioned plasma assisted chemical vapor deposition (PECVD), at a temperature of less than 350 ° C, on the surface of the metal layer 620 described above. A graphene layer 640 having a thickness of 1 to 5 nm is deposited to form a composite current diffusion layer comprising a metal layer 620 and a graphene layer 640, wherein the metal layer 620 is in ohmic contact with the graphene layer 640 for improving lateral current dispersion. Ability.

Next, referring to FIG. 5B, the thin film deposition removes a portion of the metal layer 620, the graphene layer 640, the second semiconductor layer 600, and the active layer 40 by using a conventional lithography and etching process to expose the first semiconductor layer 30, and then A first electrode 61 and a second electrode 62 are respectively formed on the graphene layer 640 and the exposed first semiconductor layer 30 to introduce an external current.

6A to 6C are views showing the structure of each step of forming a semiconductor element by using the thin film deposition apparatus of another embodiment of the present invention.

Referring to FIG. 6A, the method for forming a semiconductor device includes providing a semiconductor substrate 10, and forming an epitaxial layer 1000 on the semiconductor substrate 10, sequentially including a buffer layer 20, a first semiconductor layer 30, and an active layer. 40 and a second semiconductor layer 600. In this embodiment, the first semiconductor layer 30 includes an n-type gallium nitride layer (n-GaN), and the active layer 40 includes a multiple quantum well structure (MQW) formed by a material of a gallium nitride series. The light is emitted, and the second semiconductor layer 600 includes a p-type gallium nitride layer (p-GaN). Then, a metal layer 620 having a thickness of 1 to 10 nm is deposited on the surface of the second semiconductor layer 600 by a thin film deposition apparatus 100 of the present invention in a first thin film deposition mode, for example, the aforementioned atomic layer deposition (ALD). The material of the metal layer 620 can be selected from copper, foil or nickel.

Next, please refer to FIG. 6B, and then use the thin film deposition apparatus of the present invention in a second thin film deposition mode, such as the aforementioned plasma assisted chemical vapor deposition (PECVD), at a temperature of about 700 to 1000 degrees C. Under the condition, the carbon atoms are passed through the metal layer 620 to reach the surface of the second semiconductor layer 600, and a graphene layer 650 having a thickness of 1 to 5 nm is formed between the second semiconductor layer 600 and the metal layer 620, wherein the graphite The olefin layer 650 forms an ohmic contact with the second semiconductor layer 600.

Finally, referring to FIG. 6C, the metal layer 620 is removed by an etching process to expose the graphene layer 650 to form a transparent current diffusion layer for improving the lateral current spreading capability. Then, a portion of the graphene layer 650, the second semiconductor layer 600, and the active layer 40 are removed by a conventional lithography and etching process to expose the first semiconductor layer 30, followed by the graphene layer 650 and the exposed first A first electrode 61 and a second electrode 62 are formed on the semiconductor layer 30 to introduce an external current, respectively.

In summary, the embodiments of the present invention have provided a shower head suitable for atomic layer deposition and plasma assisted chemical vapor deposition, and a thin film deposition apparatus including a shower head, which can switch between different deposition modes in the same cavity as needed. The thin film deposition process solves the shortcomings of existing thin film deposition processes that cannot be in different modes in the same cavity.

While the invention has been described above in terms of the preferred embodiments thereof, which are not intended to limit the invention, the invention may be modified and combined with the various embodiments described above without departing from the spirit and scope of the invention. example.

10‧‧‧Semiconductor substrate

20‧‧‧buffer layer

30‧‧‧First semiconductor layer

40‧‧‧ active layer

600‧‧‧Second semiconductor layer

61‧‧‧First electrode

62‧‧‧second electrode

620‧‧‧metal layer

640‧‧‧graphene layer

650‧‧‧graphene layer

100‧‧‧film deposition apparatus

900‧‧‧ cavity

110‧‧‧Upper cavity

110A‧‧‧Upper upper body parts

110B‧‧‧Upper upper part

115‧‧‧Second process gas conduit

120‧‧‧ lower cavity

125‧‧‧First Process Gas Pipeline

130‧‧‧Fixed devices

140‧‧‧Hosting

150‧‧‧spray head for vapor deposition

150A‧‧‧first air disc

150B‧‧‧second order air disc

150A1‧‧‧ first upper surface

150A2‧‧‧ first lower surface

150B1‧‧‧Second upper surface

150B2‧‧‧Second lower surface

151‧‧‧ first recess

152‧‧‧Second pocket

153‧‧‧First vent

154‧‧‧Second vent

160‧‧‧Main gas supply pipe

162‧‧‧Branch gas supply pipe

164‧‧‧Management

165‧‧‧First process gas inlet

166‧‧‧ first opening

170‧‧‧ Plasma gas dispersion plate

170A‧‧‧First plasma gas dispersion plate

170B‧‧‧Second plasma gas dispersion plate

170C‧‧‧The third plasma gas dispersion plate

172‧‧‧ third vent

174‧‧‧fourth vent

176‧‧‧ fifth vent

177‧‧‧ bias electrode

177A‧‧‧ dielectric layer

177B‧‧‧Metal electrode

177C‧‧‧ dielectric layer

178‧‧‧Quartz retaining ring

180‧‧‧Intake room

190‧‧‧Second process gas

200‧‧‧Substrate

300‧‧‧First gas supply system

310‧‧‧ First source of precursor gas

315‧‧‧First high pressure pipe

320‧‧‧Second precursor gas supply

325‧‧‧Second high pressure tube

330‧‧‧Clean gas supply

335‧‧‧ third high pressure pipe

350‧‧‧High pressure control valve

400‧‧‧Second gas supply system

410‧‧‧Second process gas supply

415‧‧‧ fourth high pressure pipe

450‧‧‧High pressure control valve

500‧‧‧Air pump

550‧‧‧Exhaust pipe

Figure 1 is a schematic cross-sectional view showing a thin film deposition apparatus according to the present invention.

Fig. 2A is a plan view showing the first-stage air disk 150A and the second-stage air disk 150B of the shower head 150 for vapor deposition shown in Fig. 1.

Fig. 2B is a schematic cross-sectional view showing the first-stage air disk 150A and the second-order air disk 150B shown in Fig. 2A combined into a vapor deposition head 150 and taken along a section line B-B'.

Fig. 2C is an enlarged cross-sectional view showing the plasma gas dispersion disk 170 shown in Fig. 1.

2D and 2D' are schematic cross-sectional views showing the bias electrode 177 and the plasma generating portion in Fig. 2C.

Figure 3 is a schematic illustration of process gas flow in a thin film deposition apparatus in accordance with the present invention for performing a first thin film deposition mode.

Figure 4 is a schematic illustration of process gas flow in a thin film deposition apparatus in accordance with the present invention for performing a second thin film deposition mode.

5A and 5B are cross-sectional processes for forming a composite current diffusion layer containing a graphene layer and a metal layer on a semiconductor by using the thin film deposition apparatus according to the present invention.

6A to 6C are views showing the structure of each step of forming a semiconductor element by using the thin film deposition apparatus of the present invention.

Claims (10)

A method of forming a semiconductor light emitting device, comprising: providing a substrate; forming an epitaxial layer on the substrate; forming a metal layer on the epitaxial layer in a first deposition mode; and forming a second deposition mode A transparent conductive layer is on the metal layer, wherein the first deposition mode and the second deposition mode are completed in the same cavity. A method of forming a semiconductor light emitting device according to claim 1, wherein the first deposition mode comprises plasma assisted chemical vapor deposition (PECVD). A method of forming a semiconductor light-emitting device according to claim 1, wherein the second deposition mode comprises atomic layer deposition (ALD). The method of forming a semiconductor light-emitting device according to claim 1, wherein the transparent conductive layer does not comprise a non-metal material. The method of forming a semiconductor light emitting device according to claim 1, wherein the transparent conductive layer forms an ohmic contact with the metal layer. The method of forming a semiconductor light-emitting device according to claim 1, wherein the transparent conductive layer is formed at a temperature of less than 350 ° C. A method of forming a semiconductor light-emitting device according to claim 1, wherein the metal layer has a thickness of less than 10 nm. The method of forming a semiconductor light emitting device according to claim 1, wherein the transparent conductive layer has a thickness of less than 5 nm. The method of forming a semiconductor light-emitting device according to claim 1, wherein the transparent conductive layer is formed at a temperature between 700 and 1000 degrees C. The method of forming a semiconductor light emitting device according to claim 1, wherein the transparent conductive layer is located between the metal layer and the epitaxial layer.