TW202126848A - Metal organic chemical vapor deposition reactor reducing the complexity of the reactor and increasing the luminous intensity of light-emitting diodes - Google Patents

Abstract

The present invention is a metal-organic chemical vapor deposition reactor, comprising: a reaction chamber, the top includes a gas shower head, the gas shower head includes a first input port, a second input port, and a third input port; a precursor transport pipeline group , Connected to a variety of precursor sources; precursor confluence input pipeline, connected to the precursor transport pipeline group, used to converge multiple precursors, and connected to the first input port; magnesium precursor input pipeline, connected to and connected to the magnesium precursor source The second input port; the nitrogen precursor conveying pipeline, which is connected with the nitrogen precursor source, and is connected to the third input port of the gas shower head. The use of the metal organic chemical vapor deposition reactor can reduce the complexity of the reactor and increase the luminous intensity of the light-emitting diode.

Description

Metal organic chemical vapor deposition reactor

The invention relates to the field of semiconductors, in particular to a metal organic chemical vapor deposition reactor.

At present, LED (Light Emitting Diode, light-emitting diode) is a kind of solid-state lighting. Its advantages such as small size, low power consumption, long service life, high brightness, environmental protection, and durability are recognized by consumers. The scale of LED production at home and abroad Keep expanding.

In recent years, the semiconductor material gallium nitride (GaN) has been widely used in light-emitting diodes, and gallium nitride (GaN) is carried out in a metal organic chemical vapor deposition reactor (metal organic chemical vapor deposition reactor). Magnesium ions are usually doped in gallium nitride (GaN) as the positive electrode of the light emitting diode. However, the conventional metal-organic chemical vapor deposition reactor usually combines the magnesium source and the gallium source into the reaction chamber, so that Magnesium source is easy to remain in the merged pipe. Then, the remaining magnesium source affects the subsequent epitaxial structure layer, which reduces the luminous intensity of the diode.

The technical problem solved by the present invention is to provide a metal organic chemical vapor deposition reactor to reduce the influence of magnesium ions on subsequent coatings and improve the luminous intensity.

In order to solve the above technical problems, the present invention provides a metal-organic chemical vapor deposition reactor, comprising: a reaction chamber, the top of which includes a gas shower head, the gas shower head includes a first input port, a second input port, and a second input port. Three input ports; precursor delivery pipeline group, connected with multiple precursor sources; precursor confluence input pipeline, connected with the precursor delivery pipeline group, used to converge multiple precursors, and connected to the first input port of the gas shower head The magnesium precursor input pipeline is connected to the magnesium precursor source and connected to the second input port of the gas shower head; the nitrogen precursor delivery pipeline is connected to the nitrogen precursor source and communicates with the gas shower head The third input port.

Optionally, the gas shower head includes a first diffusion space, a first delivery pipe connected to the first diffusion space, a second diffusion space, and a second delivery pipe connected to the second diffusion space. The space has a first input port and a second input port, and the second diffusion space has a third input port.

Optionally, a first injection valve guide is further provided between the precursor transport pipeline group and the precursor merged input pipeline, and the first injection valve guide includes a first channel and a second channel, the first channel and the second channel The channels are all connected with the precursor conveying pipeline group, and when the second channel is opened, the second channel is connected with the precursor confluence pipeline.

Optionally, it further includes: a magnesium precursor transmission pipeline, and a second injection valve guide located between the magnesium precursor transmission pipeline and the magnesium precursor input pipeline, and the second injection valve guide includes a third channel and a second injection valve guide. Four channels, the third channel and the fourth channel are all connected with the magnesium precursor transmission pipeline, and when the fourth channel is opened, the fourth channel is connected with the magnesium precursor input pipeline.

Optionally, the precursor delivery pipeline group includes a gallium precursor delivery pipeline, an indium precursor delivery pipeline, and a silicon precursor delivery pipeline, and the multiple precursor sources include a gallium precursor source, an indium precursor source, and a silicon precursor. Source, the gallium precursor delivery pipeline is connected to the gallium precursor source, the indium precursor delivery pipeline is connected to the indium precursor source, and the silicon precursor delivery pipeline is connected to the silicon precursor source.

Optionally, it further includes: a first row of tail gas pipes connected to the first injection valve, when the first passage is opened, the first passage is connected with the first row of tail gas pipes for discharging a variety of precursor sources.

Optionally, it further includes: a second row of tail gas pipes connected to the second injection valve, when the third passage is opened, the third passage is connected with the second row of tail gas pipes for discharging the magnesium precursor source.

Compared with the conventional technology, the technical means of the embodiments of the present invention have the following beneficial effects:

In the metal-organic chemical vapor deposition reactor provided by the technical means of the present invention, the precursor delivery pipeline group is used to transport multiple precursor sources. In order to reduce the complexity of the metal-organic chemical vapor deposition reactor, the multiple precursor sources After the merging is carried out, it is transported to the first input port of the gas shower head through the precursor merging input pipeline. The magnesium precursor source is connected to the second input port of the gas shower head through a magnesium precursor input pipeline, that is, a variety of precursor sources and magnesium precursor sources are not mixed before entering the reaction chamber, but are passed through different pipelines. Transported to different ports of the gas shower head, so that magnesium ions will not remain in the converging pipeline. Then, when a variety of substrates to be processed are epitaxially formed to form an epitaxial structure layer that does not need to be doped with magnesium, it will not be caused by confluence. Magnesium pollution caused by residual magnesium in the pipeline, therefore, is beneficial to reduce the influence of magnesium and increase the luminous intensity of the light-emitting diode. In summary, the use of the metal organic chemical vapor deposition reactor can reduce the complexity of the metal organic chemical vapor deposition reactor and increase the luminous intensity of the light-emitting diode.

As mentioned in the background art, the luminous intensity of the photodiode formed by the conventional metal organic chemical vapor deposition reactor is relatively weak.

In order to solve the above technical problems, the technical means of the present invention provides a metal organic chemical vapor deposition reactor, including: a reaction chamber, the top of which includes a gas shower head, the gas shower head includes a first input port, a second input port And the third input port; the precursor conveying pipeline group, connected with a variety of precursor sources; the precursor confluence input pipeline, connected with the precursor conveying pipeline group, used to converge a variety of precursors, connected to the first gas shower head Input port; a magnesium precursor input pipeline connected to the magnesium precursor source and connected to the second input port of the gas shower head; a nitrogen precursor delivery pipeline connected to the nitrogen precursor source and connected to the gas spray The third input port of the head. The use of the metal organic chemical vapor deposition reactor can reduce the complexity of the metal organic chemical vapor deposition reactor and increase the luminous intensity of the light-emitting diode.

In order to make the above objectives, features and beneficial effects of the present invention more obvious and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

Figure 1 is a schematic diagram of the structure of a metal organic chemical vapor deposition reactor of the present invention.

Please refer to Figure 1, the top of the reaction chamber 100 includes a gas shower head 101, the first gas shower head 101 includes a first input port A, a second input port B and a third input port C; precursors The conveying pipe group 102 is connected to a variety of precursor sources 109; the precursor confluence input pipe 103 is connected to the precursor conveying pipe group 102, used to converge multiple precursor sources, and is connected to the first input port of the gas shower head 101 A; magnesium precursor input pipeline 105, connected to the magnesium precursor source 110, and connected to the second input port B of the gas shower head 101; nitrogen precursor delivery pipeline 113, connected to the nitrogen precursor source 114, and connected The third input port C of the gas shower head 101; the rotating base 106, which is located at the bottom of the reaction chamber 100, is opposite to the gas shower head 101, and is used to support and drive the rotating base 106 The substrate tray rotates, and the substrate tray is used to fix one or more substrates to be processed.

The reaction chamber 100 is used to form an epitaxial structure layer required for a photodiode on a substrate to be processed. The epitaxial structure layer includes a transition layer and a negative electrode located on the transition layer in order from the surface of the substrate to be processed upwards. Layer, a light-emitting layer on the negative electrode layer, and a positive electrode layer on the light-emitting layer, wherein the positive electrode layer is used to form the positive electrode of the photodiode, and the negative electrode layer is used to form the negative electrode of the photodiode.

In this embodiment, the material of the transition layer is gallium nitride that is not doped with ions; the material of the negative electrode layer is gallium nitride that is doped with silicon ions; the material of the light-emitting layer is indium gallium nitride; The material of the positive electrode layer is P-type gallium nitride doped with magnesium ions.

The precursor delivery pipeline group 102 includes a gallium precursor delivery pipeline 102a, an indium precursor delivery pipeline 102b, and a silicon precursor delivery pipeline 102c. The multiple precursor sources 109 include a gallium precursor source 109a, an indium precursor source 109b, and The silicon precursor source 109c, the gallium precursor delivery pipeline 102a is connected to the gallium precursor source 109a, the indium precursor delivery pipeline 102b is connected to the indium precursor source 109b, and the silicon precursor delivery pipeline 102c is connected to the silicon precursor Source 109c is connected.

The gas shower head 101 includes a first diffusion space 101a, a first delivery pipe 101b connected to the first diffusion space 101a, a second diffusion space 101c, and a second delivery pipe 101d connected to the second diffusion space 101c. The first diffusion space 101a has a first input port A and a second input port B, and the second diffusion space 101c has a third input port C.

In order to reduce the complexity of the metal organic chemical vapor deposition reactor, the multiple precursor sources 109 are usually combined before entering the reaction chamber 100, that is, the first input of the gas shower 101 is input through the precursor combined input pipeline 103 Port A.

A first injection valve guide 104 is also provided between the precursor conveying pipeline group 102 and the precursor merged input pipeline 103. The first injection valve guide 104 includes a first channel (not shown in the figure) and a second channel. (Not shown in the figure), both the first channel and the second channel are in communication with the precursor conveying pipeline group 102. When the second channel is opened, the second channel is in communication with the precursor confluence pipeline 103, so that the various precursors are Transported to the reaction chamber 100.

Before delivering the various precursors to the reaction chamber 100, it is usually necessary to adjust the flow characteristics of the various precursor sources 109 smoothly. Therefore, a first exhaust gas pipeline 111 connected to the first injection valve guide 104 is also provided. The first row of tail gas pipelines 111 is used to discharge multiple precursor sources, and when the flow rate of the multiple precursor sources meets a predetermined requirement, the multiple precursor sources are transported into the reaction chamber 100.

The magnesium precursor input pipeline 105 is connected to the second input port B of the gas shower head 101, that is, a variety of precursor sources and magnesium precursor sources are not mixed before entering the reaction chamber 100, but are passed through different pipelines. Transported to different ports of the gas shower head, so that magnesium ions will not remain in the converging pipeline. Then, when a variety of substrates to be processed are epitaxially formed to form an epitaxial structure layer that does not need to be doped with magnesium, it will not be caused by confluence. Magnesium pollution caused by residual magnesium in the pipeline, therefore, is beneficial to reduce the influence of magnesium and increase the luminous intensity of the light-emitting diode. In summary, the use of the metal organic chemical vapor deposition reactor can reduce the complexity of the metal organic chemical vapor deposition reactor and increase the luminous intensity of the light-emitting diode.

The metal organic chemical vapor deposition reactor further includes: a magnesium precursor transmission pipeline 108, and a second injection valve guide 107 located between the magnesium precursor transmission pipeline 108 and the magnesium precursor input pipeline 105, and the second injection The valve guide 107 includes a third channel (not shown in the figure) and a fourth channel (not shown in the figure). Both the third channel and the fourth channel are in communication with the magnesium precursor transmission pipeline 108. When the fourth channel is opened, The fourth channel is in communication with the magnesium precursor input pipeline 105.

The metal-organic chemical vapor deposition reactor also includes a second exhaust gas pipe 112 connected to the second injection valve guide 107. When the third passage is opened, the third passage is connected to the second exhaust gas pipe 112. To discharge the magnesium precursor source to stabilize the flow rate of the magnesium precursor source.

In addition, even if a portion of the magnesium precursor remains in the first gas diffusion space 101a, since the volume of the first gas diffusion space 101a is relatively large, the rate at which a new magnesium precursor source is subsequently delivered to the first gas diffusion space 101a It is slow, making it difficult for the new magnesium precursor source to take away the remaining magnesium precursor source, so that the amount of the magnesium precursor source entering the reaction chamber 100 has a small difference from the predetermined value, which is beneficial to improve the controllability of the photodiode sex.

In this embodiment, the metal organic chemical vapor deposition reactor further includes: a tray 106 located in the reaction chamber 100 and opposite to the gas shower head 101, and a plurality of substrate grooves are provided in the tray 106 (Not shown in the figure), each of the substrate slots is used to accommodate the substrate to be processed; the rotating device 150 is used to drive the tray 106 to rotate; the heating device (not shown in the figure) is used to The tray 106 is heated.

Although the present invention is disclosed as above, the present invention is not limited to this. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope defined by the patent application.

100: reaction chamber 101: Gas sprinkler 101a: The first diffusion space 101b: The first delivery pipeline 101c: second diffusion space 101d: The second conveying pipeline 102: Precursor transport pipeline group 102a: Gallium precursor delivery pipeline 102b: Indium precursor delivery pipeline 102c: Silicon precursor transportation pipeline 103: Precursor confluence input pipeline 104: The first injection valve guide 105: Magnesium precursor input pipeline 106: Rotating base 107: Second injection valve guide 108: Magnesium precursor transmission pipeline 109: Multiple precursor sources 109a: Gallium precursor source 109b: Indium precursor source 109c: silicon precursor source 110: Magnesium precursor source 111: First row of exhaust pipes 112: The second row of exhaust pipes 113: Nitrogen precursor delivery pipeline 114: Nitrogen precursor source 150: Rotating device A: The first input port B: Second input port C: Third input port

Figure 1 is a schematic diagram of the structure of a metal organic chemical vapor deposition reactor of the present invention.

100: reaction chamber

101: Gas sprinkler

101a: The first diffusion space

101b: The first delivery pipeline

101c: second diffusion space

101d: The second conveying pipeline

102: Precursor transport pipeline group

102a: Gallium precursor delivery pipeline

102b: Indium precursor delivery pipeline

102c: Silicon precursor transportation pipeline

103: Precursor confluence input pipeline

104: The first injection valve guide

105: Magnesium precursor input pipeline

106: Rotating base

107: Second injection valve guide

108: Magnesium precursor transmission pipeline

109: Multiple precursor sources

109a: Gallium precursor source

109b: Indium precursor source

109c: silicon precursor source

110: Magnesium precursor source

111: First row of exhaust pipes

112: The second row of exhaust pipes

113: Nitrogen precursor delivery pipeline

114: Nitrogen precursor source

150: Rotating device

A: The first input port

B: Second input port

C: Third input port

Claims (10)

A metal organic chemical vapor deposition reactor, which includes: A reaction chamber, the top of which includes a gas shower head, the gas shower head includes a first input port, a second input port, and a third input port; A precursor transport pipeline group, connected with a variety of precursor sources; A precursor confluence input pipeline, connected with the precursor delivery pipe group, used to converge a variety of precursors, and connected to the first input port of the gas shower head; A magnesium precursor input pipeline connected with a magnesium precursor source and connected with the second input port of the gas shower head; A nitrogen precursor conveying pipeline is connected with a nitrogen precursor source and communicates with the third input port of the gas shower head. The metal organic chemical vapor deposition reactor according to claim 1, wherein the gas shower head includes a first diffusion space, a first delivery pipe connected to the first diffusion space, a second diffusion space, and A second delivery pipe connected to the second diffusion space, the first diffusion space has a first input port and a second input port, and the second diffusion space has a third input port. The metal-organic chemical vapor deposition reactor according to claim 1, wherein a first injection valve guide is further provided between the precursor transport pipeline group and the precursor merged input pipeline, and the first injection valve guide includes a A first channel and a second channel, both of the first channel and the second channel are in communication with the precursor conveying pipeline group, and when the second channel is opened, the second channel is in communication with the precursor confluence pipeline. The metal organic chemical vapor deposition reactor according to claim 1, further comprising: a magnesium precursor transmission pipeline, and a second injection between the magnesium precursor transmission pipeline and the magnesium precursor input pipeline The second injection valve guide includes a third channel and a fourth channel. The third channel and the fourth channel are both in communication with the magnesium precursor transmission pipeline. When the fourth channel is opened, the fourth channel The channel communicates with the magnesium precursor input pipeline. The metal organic chemical vapor deposition reactor according to claim 1, wherein the precursor delivery pipeline group includes a gallium precursor delivery pipeline, an indium precursor delivery pipeline, and a silicon precursor delivery pipeline, and the multiple precursors The source includes a gallium precursor source, an indium precursor source, and a silicon precursor source. The gallium precursor delivery pipeline is connected to the gallium precursor source, and the indium precursor delivery pipeline is connected to the indium precursor source. The precursor transportation pipeline is connected with the silicon precursor source. The metal-organic chemical vapor deposition reactor according to claim 3, further comprising: a first row of tail gas pipes connected with the first injection valve, when the first passage is opened, the first passage Connected with the first row of tail gas pipelines for exhausting the various precursor sources. The metal-organic chemical vapor deposition reactor according to claim 4, further comprising: a second row of tail gas pipes connected with the second injection valve, when the third passage is opened, the third passage It is connected with the second row of tail gas pipelines and is used to discharge the magnesium precursor source. The metal-organic chemical vapor deposition reactor according to claim 1, further comprising: a tray located in the reaction chamber and arranged opposite to the gas shower head, and a plurality of substrate tanks are arranged in the tray, each The substrate slot is used for accommodating the substrate to be processed. The metal organic chemical vapor deposition reactor according to claim 8, further comprising: a rotating device for driving the tray to rotate. The metal organic chemical vapor deposition reactor according to claim 9, which further includes: a heating device for heating the tray.

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