TWI663781B - Multi-frequency antenna packaging structure - Google Patents
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Abstract
本發明係提供一種多頻天線封裝結構,該結構係包括一第一重佈線層、一積體電路層、第二重佈線層及一天線單元層,於該第一重佈線層、一積體電路層、第二重佈線層及一天線單元層上設置有複數可相互連通之開孔,且各該開孔內填充導電材料,藉以達到各層間電性相互連接,及縮小多頻天線封裝結構之目的。 The present invention provides a multi-frequency antenna packaging structure. The structure includes a first redistribution layer, an integrated circuit layer, a second redistribution layer, and an antenna unit layer. The circuit layer, the second redistribution layer and an antenna unit layer are provided with a plurality of openings that can communicate with each other, and each of the openings is filled with a conductive material to achieve electrical interconnection between the layers and reduce the multi-frequency antenna packaging structure Purpose.
Description
本發明係有關於一種天線封裝結構,更詳而言之,尤指一種多頻天線封裝結構。 The present invention relates to an antenna packaging structure, and more particularly to a multi-frequency antenna packaging structure.
天線是通信設備的重要組成部分,可以輻射射頻信號。用於將天線系統與晶片系統電連接的一種現有連接方式是引線接合,其中天線包括設置在基板上的天線和設置在晶片上的另一個天線。然而,引線接合不僅會顯著地導致射頻信號的功耗,而且由於用於獲得高品質之輸入/輸出的電極焊盤而佔用大的空間。 Antennas are an important part of communication equipment and can radiate radio frequency signals. One existing connection method for electrically connecting an antenna system to a chip system is wire bonding, where the antenna includes an antenna provided on a substrate and another antenna provided on a wafer. However, wire bonding not only causes significant power consumption of radio frequency signals, but also takes up a large space due to electrode pads used to obtain high-quality input / output.
為了減少引線接合的使用,在封裝結構中集成天線的設計已經由公開論文公開。然而,封裝結構不是將多頻天線與系統電連接的疊層封裝結構,與現有的先進製造工藝相比,封裝結構的製造工藝並不穩定,模具複合過孔不一致,並且由於翹曲的影響而發生非接觸接合。 In order to reduce the use of wire bonding, the design of an integrated antenna in a package structure has been disclosed by a public paper. However, the packaging structure is not a laminated packaging structure that electrically connects the multi-frequency antenna to the system. Compared with the existing advanced manufacturing process, the manufacturing process of the packaging structure is not stable, the mold compound vias are inconsistent, and due to the effect of warping Non-contact bonding occurred.
鑒於上述習知技術之缺點,本發明主要之目的在於提供一種縮小結構之多頻天線封裝結構。 In view of the shortcomings of the conventional techniques, the main object of the present invention is to provide a multi-frequency antenna package structure with a reduced structure.
本發明另一目的在於提供一種可同時使用不同 頻率之多頻天線封裝結構。 Another object of the present invention is to provide a method that can simultaneously use different Multi-frequency antenna package structure.
本發明再一目的在於提供一種製作多頻天線之製作方法。 Another object of the present invention is to provide a manufacturing method for manufacturing a multi-frequency antenna.
本發明又一目的在於提供一種使用多頻天線之通訊裝置。 Another object of the present invention is to provide a communication device using a multi-frequency antenna.
為達上述目的,本發明係提供一種多頻天線封裝結構,該結構係包括一第一重佈線層、一積體電路層、第二重佈線層及一天線單元層,該第一重佈線層係包括一具有複數開口的第一介電材料層,及設置於該第一介電材料層的複數開口中的複數金屬層,該積體電路層係設置於該第一重佈線層上,具有至少一金屬通孔(via)、至少一金屬柱(pillar)、一積體電路晶片和一模製(molding)層,該第二重佈線層係設置於該積體電路層上,包括一第二介電材料層和形成在該第二介電材料層的多個開口中的多個第二金屬層,該第一天線單元層係設置於該第二重佈線層上,包括一第一介電層和形成在該第一介電層的複數開口中的複數第三金屬層,其中,該金屬柱以及該積體電路晶片設置在該第一重佈線層上,該金屬柱電連接該積體電路晶片與該等第一金屬層的其中一者,該等第三金屬層中的至少一者電連接該等第二金屬層的其中一者,並且該等第三金屬層形成一第一天線單元,其中該第一天線單元為一多輸入多輸出相位天線,且該積體電路晶片層的高度相同於或小於該金屬通孔的高度,藉以達到縮小多頻天 線封裝結構之目的。 To achieve the above object, the present invention provides a multi-frequency antenna packaging structure, which includes a first redistribution layer, an integrated circuit layer, a second redistribution layer, and an antenna unit layer, the first redistribution layer The system includes a first dielectric material layer having a plurality of openings, and a plurality of metal layers disposed in the plurality of openings of the first dielectric material layer. The integrated circuit layer is disposed on the first redistribution layer and has At least one metal via, at least one metal pillar, an integrated circuit wafer, and a molding layer. The second redistribution layer is disposed on the integrated circuit layer and includes a first Two dielectric material layers and a plurality of second metal layers formed in the openings of the second dielectric material layer. The first antenna unit layer is disposed on the second redistribution layer and includes a first A dielectric layer and a plurality of third metal layers formed in the plurality of openings of the first dielectric layer, wherein the metal pillars and the integrated circuit wafer are disposed on the first redistribution layer, and the metal pillars are electrically connected to the One of the integrated circuit wafer and the first metal layer, the At least one of the third metal layers is electrically connected to one of the second metal layers, and the third metal layers form a first antenna unit, wherein the first antenna unit is a multiple input multiple Output phase antenna, and the height of the integrated circuit chip layer is the same as or less than the height of the metal through hole, so as to reduce the multi-frequency days Purpose of wire packaging structure.
100‧‧‧積體電路晶片 100‧‧‧Integrated Circuit Chip
101‧‧‧凸塊球 101‧‧‧ Bump Ball
102‧‧‧第一保護層 102‧‧‧first protective layer
103‧‧‧第一重佈線層 103‧‧‧First rewiring layer
104‧‧‧積體電路層 104‧‧‧Integrated Circuit Layer
105‧‧‧第二重佈線層 105‧‧‧ Second wiring layer
106‧‧‧第一屏蔽層 106‧‧‧First shielding layer
107‧‧‧第一天線層 107‧‧‧First antenna layer
108‧‧‧第二保護層 108‧‧‧Second protective layer
109‧‧‧第一介電材料層 109‧‧‧first dielectric material layer
110‧‧‧第一金屬層 110‧‧‧first metal layer
111‧‧‧金屬柱 111‧‧‧ metal pillar
112‧‧‧第二天線單元 112‧‧‧Second antenna unit
113‧‧‧導電墊 113‧‧‧Conductive pad
114‧‧‧積體電路 114‧‧‧Integrated Circuit
115‧‧‧半導體材料 115‧‧‧Semiconductor materials
116‧‧‧模製層 116‧‧‧moulding layer
117‧‧‧金屬通孔 117‧‧‧metal through hole
118‧‧‧第二介電材料層 118‧‧‧second dielectric material layer
119‧‧‧第二金屬層 119‧‧‧Second metal layer
120‧‧‧第二介電層 120‧‧‧Second dielectric layer
121‧‧‧第四金屬層 121‧‧‧ fourth metal layer
122‧‧‧第三金屬層 122‧‧‧ Third metal layer
123‧‧‧第一介電層 123‧‧‧first dielectric layer
第1圖係為本發明多頻天線封裝結構示意圖。 FIG. 1 is a schematic diagram of a multi-frequency antenna packaging structure of the present invention.
以下係藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容瞭解本發明之其他優點與功效。 The following is a description of specific embodiments of the present invention. Those skilled in the art can understand other advantages and effects of the present invention from the content disclosed in this specification.
請參閱第1圖,係為本發明多頻天線封裝結構示意圖,如圖所示,該結構係包括一第一重佈線(redistribution)層103、一積體電路層104、一第二重佈線層105、一第一屏蔽層106、一第一天線層107、一第一保護層102、一第二保護層108及多個凸塊球(bump balls)101,該第一重佈線層103包括一第一介電材料層109,和形成在該第一介電材料層109的複數開口中的複數第一金屬層110,該積體電路層104形成於該第一重佈線層上103,該積體電路層104包括至少一金屬通孔(via)117、至少一金屬柱(pillar)111、積體電路晶片100和模製(molding)層116,其中,該模製層116用以填充該金屬通孔117形成的複數開口,該金屬柱111以及該積體電路晶片100設置在該第一重佈線層上103,該金屬通孔117電連接各該第一金屬層110,該金屬柱111電連接該積體電路晶片100,及複數第一金屬層110, 該積體電路晶片100包括位於該積體電路晶片100之積體電路上114的第二天線單元112、及複數導電墊113。 Please refer to FIG. 1, which is a schematic diagram of a multi-frequency antenna package structure of the present invention. As shown in the figure, the structure includes a first redistribution layer 103, an integrated circuit layer 104, and a second redistribution layer. 105. A first shielding layer 106, a first antenna layer 107, a first protective layer 102, a second protective layer 108, and a plurality of bump balls 101. The first redistribution layer 103 includes A first dielectric material layer 109 and a plurality of first metal layers 110 formed in a plurality of openings of the first dielectric material layer 109. The integrated circuit layer 104 is formed on the first redistribution layer 103. The integrated circuit layer 104 includes at least one metal via 117, at least one metal pillar 111, an integrated circuit wafer 100, and a molding layer 116, wherein the molding layer 116 is used to fill the A plurality of openings formed by metal vias 117, the metal pillars 111 and the integrated circuit wafer 100 are disposed on the first redistribution layer 103, the metal vias 117 are electrically connected to the first metal layers 110, and the metal pillars 111 Electrically connect the integrated circuit chip 100 and the plurality of first metal layers 110, The integrated circuit chip 100 includes a second antenna unit 112 and a plurality of conductive pads 113 on the integrated circuit 114 of the integrated circuit chip 100.
該第二重佈線層105形成於該積體電路層104上,該第二重佈線層105包括一第二介電材料層118,及形成在該第二介電材料層118的各該開口中的第二金屬層119,其中,該金屬通孔117電性連接複數第二金屬層119,該第一屏蔽層106設置於該第一天線單元層107,及該第二重佈線層105之間,該第一屏蔽層106包括一第一介電層120,及形成於該第二介質層120的複數開口中的複數第四金屬層121,其中,各該第四金屬層121電連接該第一天線單元層107的複數第三金屬層122,及部分的第二金屬層119。 The second redistribution layer 105 is formed on the integrated circuit layer 104. The second redistribution layer 105 includes a second dielectric material layer 118 and is formed in each of the openings of the second dielectric material layer 118. The second metal layer 119 is electrically connected to the second metal layer 119. The first shielding layer 106 is disposed on the first antenna unit layer 107 and the second redistribution layer 105. Meanwhile, the first shielding layer 106 includes a first dielectric layer 120 and a plurality of fourth metal layers 121 formed in a plurality of openings of the second dielectric layer 120, wherein each of the fourth metal layers 121 is electrically connected to the The plurality of third metal layers 122 of the first antenna element layer 107 and a portion of the second metal layer 119.
上述之實施例僅為例示性說明本發明之特點及其功效,而非用於限制本發明之實質技術內容的範圍。任何熟習此技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修飾與變化。因此,本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above-mentioned embodiments are merely illustrative for describing the features and effects of the present invention, and are not intended to limit the scope of the essential technical content of the present invention. Anyone skilled in the art can modify and change the above embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be listed in the scope of patent application described later.
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CN113809511A (en) * | 2020-06-17 | 2021-12-17 | 深圳富泰宏精密工业有限公司 | Antenna structure and electronic equipment with same |
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TWI728742B (en) * | 2019-09-30 | 2021-05-21 | 台灣積體電路製造股份有限公司 | Antenna package, system of antenna package and method of manufacturing antenna package |
US11114745B2 (en) | 2019-09-30 | 2021-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Antenna package for signal transmission |
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TW201725693A (en) * | 2016-01-06 | 2017-07-16 | 聯發科技股份有限公司 | Semiconductor package and semiconductor package assembly |
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