TWI802726B - Carrying substrate, electronic package having the carrying substrate, and methods for manufacturing the same - Google Patents
Carrying substrate, electronic package having the carrying substrate, and methods for manufacturing the same Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
本發明係有關一種封裝結構,尤指一種電子封裝件及其承載基板與製法。 The invention relates to a packaging structure, especially to an electronic package, its carrying substrate and its manufacturing method.
隨著電子產品在功能及處理速度之需求的提升,作為電子產品之核心組件的半導體晶片需具有更高密度之線路構件(Electronic Components)及電子電路(Electronic Circuits),故半導體晶片在運作時將隨之產生大量的熱能,此外,包覆該半導體晶片之封裝膠體係為一種導熱係數僅0.8Wm-1k-1之不良傳熱材質(即熱量之逸散效率不佳),因而若不能有效逸散所產生之熱量,將會造成半導體晶片之損害或造成產品信賴性問題。 With the improvement of the function and processing speed of electronic products, semiconductor chips, which are the core components of electronic products, need to have higher density circuit components (Electronic Components) and electronic circuits (Electronic Circuits), so semiconductor chips will A large amount of heat energy is generated accordingly. In addition, the encapsulant system covering the semiconductor chip is a poor heat transfer material with a thermal conductivity of only 0.8Wm-1k-1 (that is, the heat dissipation efficiency is not good), so if it cannot be effectively released The heat generated by dissipating will cause damage to the semiconductor chip or cause product reliability problems.
為了能迅速將熱能散逸至大氣中,業界通常在半導體封裝結構中配置散熱片(Heat Sink或Heat Spreader),該散熱片藉由散熱膠,如導熱介面材(Thermal Interface Material,簡稱TIM),結合至半導體晶片背面,以藉散熱膠與散熱片逸散出半導體晶片所產生之熱量,再 者,通常令散熱片之頂面外露出封裝膠體或直接外露於大氣中為佳,俾取得較佳之散熱效果。 In order to quickly dissipate heat energy into the atmosphere, the industry usually configures a heat sink (Heat Sink or Heat Spreader) in the semiconductor package structure. To the back of the semiconductor chip to dissipate the heat generated by the semiconductor chip through the heat dissipation glue and the heat sink, and then Or, it is usually better to expose the top surface of the heat sink to the encapsulant or directly to the atmosphere, so as to obtain a better heat dissipation effect.
如第1圖所示,習知半導體封裝件1之製法係先將一半導體晶片11以其作用面11a利用覆晶接合方式(即透過導電凸塊110與底膠111)設於一封裝基板10上,再將一散熱件13以其頂片130藉由TIM層12(其包含銲錫層與助焊劑)回銲結合於該半導體晶片11之非作用面11b上,且該散熱件13之支撐腳131藉由黏著層14架設於該封裝基板10上。接著,進行封裝壓模作業,以供封裝膠體(圖略)包覆該半導體晶片11及散熱件13,並使該散熱件13之頂片130外露出封裝膠體而直接與大氣接觸。之後,將該半導體封裝件1以其封裝基板10藉由複數銲球15接置於一電路板8上。
As shown in FIG. 1 , the conventional manufacturing method of semiconductor package 1 is to first place a
於運作時,該半導體晶片11所產生之熱能係經由該非作用面11b、TIM層12而傳導至該散熱件13之頂片130以散熱至該半導體封裝件1之外部。
During operation, the heat energy generated by the
然而,隨著產業應用的發展,近年來逐漸朝著大尺寸封裝規格之趨勢進行研發,以應用於高密度線路/高傳輸速度/高疊層數/大尺寸設計之高階產品。 However, with the development of industrial applications, in recent years, research and development has gradually moved towards the trend of large-size packaging specifications, so as to be applied to high-end products with high-density lines/high transmission speed/high stacking number/large-size design.
惟,習知半導體封裝件1中,對於大尺寸板面的封裝基板10之需求,如板體尺寸100*100mm2的需求,尚不具量產性,且單一板體之製作成本極高,因而不具市場競爭力。
However, in the conventional semiconductor package 1, the requirement for a
因此,如何克服上述習知技術之種種問題,實已成為目前業界亟待克服之難題。 Therefore, how to overcome the various problems of the above-mentioned conventional technologies has become a difficult problem to be overcome urgently in the industry at present.
鑑於上述習知技術之種種缺失,本發明提供一種承載基板,係包括:一第一線路結構,係具有相對之第一側與第二側;至少一線路構件,係設於該第一線路結構之第一側上;以及一包覆層,係形成於該第一線路結構之第一側上以包覆該線路構件。 In view of the various deficiencies of the above-mentioned conventional technologies, the present invention provides a carrier substrate, which includes: a first circuit structure having opposite first and second sides; at least one circuit component is arranged on the first circuit structure on the first side of the first wiring structure; and a covering layer is formed on the first side of the first wiring structure to cover the wiring member.
本發明亦提供一種承載基板之製法,係包括:提供一具有相對之第一側與第二側的第一線路結構;設置至少一線路構件於該第一線路結構之第一側上;以及形成包覆層於該第一線路結構之第一側上,以令該包覆層包覆該線路構件。 The present invention also provides a method for manufacturing a carrier substrate, which includes: providing a first wiring structure with opposite first and second sides; disposing at least one wiring member on the first side of the first wiring structure; and forming The cladding layer is on the first side of the first circuit structure, so that the cladding layer covers the circuit component.
前述之承載基板及其製法中,復包括形成第二線路結構於該包覆層上,且令該第二線路結構電性連接該線路構件。例如,該線路構件藉由複數導電體電性連接該第二線路結構。又包括形成導電柱於該第一線路結構之第一側上,以令該包覆層包覆該導電柱,且該導電柱電性連接該第一線路結構與第二線路結構。或者,可包括形成複數導電凸塊於該第二線路結構上。 In the aforementioned carrying substrate and its manufacturing method, further comprising forming a second circuit structure on the cladding layer, and electrically connecting the second circuit structure to the circuit member. For example, the circuit component is electrically connected to the second circuit structure through a plurality of conductors. It also includes forming a conductive post on the first side of the first circuit structure, so that the cladding layer covers the conductive post, and the conductive post is electrically connected to the first circuit structure and the second circuit structure. Alternatively, it may include forming a plurality of conductive bumps on the second circuit structure.
前述之承載基板及其製法中,該包覆層係包覆至少四個該線路構件。 In the aforementioned carrier substrate and its manufacturing method, the cladding layer covers at least four of the circuit components.
前述之承載基板及其製法中,該線路構件係為封裝基板。 In the aforementioned carrier substrate and its manufacturing method, the circuit component is a packaging substrate.
前述之承載基板及其製法中,該線路構件係為無核心層之線路結構。 In the aforementioned carrier substrate and its manufacturing method, the circuit component is a circuit structure without a core layer.
前述之承載基板及其製法中,該線路構件係具有矽穿孔結構。 In the aforementioned carrier substrate and its manufacturing method, the circuit component has a TSV structure.
前述之承載基板及其製法中,該線路構件藉由複數導電體電性連接該第一線路結構。 In the aforementioned carrier substrate and its manufacturing method, the circuit component is electrically connected to the first circuit structure through a plurality of conductors.
本發明復一種電子封裝件,係包括:一前述之承載基板;以及至少一電子元件,係設於該承載基板之第一側與第二側之其中一者上。 Another electronic package of the present invention includes: the aforementioned carrier substrate; and at least one electronic component disposed on one of the first side and the second side of the carrier substrate.
本發明更提供一種電子封裝件之製法,係包括:提供一前述之承載基板;以及設置至少一電子元件於該承載基板之第一側與第二側之其中一者上。 The present invention further provides a method for manufacturing an electronic package, which includes: providing the aforementioned carrier substrate; and disposing at least one electronic component on one of the first side and the second side of the carrier substrate.
前述之電子封裝件及其製法中,該電子元件係為主動元件、被動元件或其二者組合。 In the aforementioned electronic package and its manufacturing method, the electronic element is an active element, a passive element or a combination thereof.
前述之電子封裝件及其製法中,復包括形成複數導電元件於該承載基板之第一側與第二側中未設有該電子元件之者上。 In the aforementioned electronic package and its manufacturing method, it further includes forming a plurality of conductive elements on the first side and the second side of the carrier substrate that are not provided with the electronic element.
前述之電子封裝件及其製法中,復包括配置散熱件於該承載基板上。例如,該散熱件係接觸該電子元件。 In the aforementioned electronic package and its manufacturing method, it further includes disposing a heat dissipation element on the carrier substrate. For example, the heat sink is in contact with the electronic component.
由上可知,本發明之電子封裝件及其承載基板與製法中,主要藉由將線路構件設置於第一線路結構上並嵌埋於包覆層中,以增加佈線區,故相較於習知技術,對於大尺寸板面的封裝基板之需求,本發明不僅具有量產性,且單一承載基板之製作成本極低,因而極具市場競爭力。 It can be seen from the above that in the electronic package and its carrier substrate and manufacturing method of the present invention, the wiring components are mainly arranged on the first wiring structure and embedded in the cladding layer to increase the wiring area, so compared with the conventional According to the known technology, the present invention is not only capable of mass production, but also has a very low manufacturing cost for a single carrier substrate, so it is very competitive in the market.
再者,該線路結構係用於調配該線路構件之佈線層數,使該線路構件之佈線層數降低,以提高該線路構件之製作良率。 Furthermore, the circuit structure is used to adjust the number of wiring layers of the circuit component, so as to reduce the number of wiring layers of the circuit component, so as to improve the production yield of the circuit component.
1‧‧‧半導體封裝件 1‧‧‧Semiconductor package
10‧‧‧封裝基板 10‧‧‧Package Substrate
11‧‧‧半導體晶片 11‧‧‧semiconductor chip
11a,30a‧‧‧作用面 11a, 30a‧‧‧Action surface
11b,30b‧‧‧非作用面 11b, 30b‧‧‧non-action surface
110,29‧‧‧導電凸塊 110,29‧‧‧Conductive bump
111,33‧‧‧底膠 111,33‧‧‧Primer
12‧‧‧TIM層 12‧‧‧TIM layer
13,3a‧‧‧散熱件 13,3a‧‧‧Heat sink
130‧‧‧頂片 130‧‧‧top sheet
131,31:支撐腳 131,31: Supporting feet
14,91,310:黏著層 14,91,310: Adhesive layer
15:銲球 15: solder ball
2,2’,2”,3b:承載基板 2, 2’, 2”, 3b: carrier substrate
2a:線路板塊 2a: Circuit board
20:第一線路結構 20: The first line structure
20a:第一側 20a: First side
20b:第二側 20b: Second side
200:第一絕緣層 200: first insulating layer
201,201’:第一線路重佈層 201,201': the first line redistribution layer
21:線路構件 21: Line components
21a:頂面 21a: top surface
21b:底面 21b: bottom surface
210:線路層 210: line layer
211:絕緣體 211: insulator
212:保護膜 212: Protective film
213:電性接觸墊 213: Electrical contact pad
22,22’:導電體 22,22': Conductor
22a,23a:端面 22a, 23a: end face
23:導電柱 23: Conductive column
24:結合層 24: Bonding layer
25:包覆層 25: cladding layer
26:第二線路結構 26: Second line structure
260:第二絕緣層 260: second insulating layer
261:第二線路重佈層 261: Second line redistribution layer
27:導電元件 27: Conductive element
28:絕緣保護層 28: Insulation protective layer
290:凸塊底下金屬層 290: metal layer under the bump
3,3’:電子封裝件 3,3': electronic package
30:電子元件 30: Electronic components
300:電極墊 300: electrode pad
32:散熱體 32: radiator
320:導熱介面層 320: thermal interface layer
4:電子裝置 4: Electronic device
8:電路板 8: Circuit board
9:承載板 9: Loading board
90:離型層 90: release layer
S:切割路徑 S: cutting path
第1圖係為習知半導體封裝件之剖視示意圖。 FIG. 1 is a schematic cross-sectional view of a conventional semiconductor package.
第2A至2E圖係為本發明之承載基板之製法之第一實施例的剖視示意圖。 2A to 2E are schematic cross-sectional views of the first embodiment of the manufacturing method of the carrier substrate of the present invention.
第2F至2G圖係為本發明之電子封裝件之製法之第一實施例的剖視示意圖。 2F to 2G are schematic cross-sectional views of the first embodiment of the manufacturing method of the electronic package of the present invention.
第2G’圖係為第2G圖之另一態樣之剖視示意圖。 Fig. 2G' is a schematic cross-sectional view of another aspect of Fig. 2G.
第2G”圖係為第2E圖之另一態樣之剖視示意圖。 Figure 2G" is a schematic cross-sectional view of another aspect of Figure 2E.
第3A至3B圖係為本發明之承載基板之製法之第二實施例的剖視示意圖。 3A to 3B are schematic cross-sectional views of the second embodiment of the manufacturing method of the carrier substrate of the present invention.
第3C至3D圖係為本發明之電子封裝件之製法之第二實施例的剖視示意圖。 Figures 3C to 3D are schematic cross-sectional views of the second embodiment of the manufacturing method of the electronic package of the present invention.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The implementation of the present invention is described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」、「第一」、「第二」及「一」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可 實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for the understanding and reading of those familiar with this technology, and are not used to limit the implementation of the present invention Therefore, it has no technical substantive meaning. Any modification of structure, change of proportional relationship or adjustment of size shall still fall within the scope of this invention without affecting the effect and purpose of the present invention. The technical content disclosed by the invention must be within the scope covered. At the same time, terms such as "above", "first", "second" and "one" quoted in this specification are only for the convenience of description, and are not used to limit the scope of the present invention. The scope of implementation and the change or adjustment of its relative relationship shall also be regarded as the scope of implementation of the present invention without substantive changes in the technical content.
第2A至2E圖係為本發明之承載基板2之製法之第一實施例的剖面示意圖。
2A to 2E are schematic cross-sectional views of the first embodiment of the manufacturing method of the
如第2A圖所示,提供一線路板塊2a,其包含複數線路構件21。
As shown in FIG. 2A , a
於本實施例中,該線路構件21係為如具有核心層與線路結構之封裝基板(substrate)或無核心層(coreless)之線路結構(圖中係呈現coreless型),其具有絕緣體211及結合該絕緣體211之複數線路層210,如扇出(fan out)型重佈線路層(redistribution layer,簡稱RDL),且形成該絕緣體211之材質係為如聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)或其它等之介電材;或者,該線路構件21可具有矽穿孔(Through Silicon Via,簡稱TSV)結構。應可理解地,該線路構件21亦可為其它配置佈線之板體,如有機板材(organic material)、半導體板材(silicon)、陶瓷板材(ceramic)或其它具有金屬佈線(routing)之載板,並不限於上述。
In this embodiment, the
再者,該線路構件21上係結合並電性連接複數導電體22,且該導電體22係為如導電線路、銲球之圓球狀、或如銅柱、銲錫凸塊等金屬材之柱狀、或銲線機製作之釘狀(stud),但不限於此。另外,該線路構件21之頂面21a可形成有一如鈍化材之保護膜212,以令部分線路層210(如複數電性接觸墊213)外露出該保護膜212,且該導電體22形成於該電性接觸墊213上並凸出該保護膜212。
Furthermore, the
如第2B圖所示,切割該線路板塊2a以獲取複數線路構件21,再將一個或複數個(如圖所示之四個以上)線路構件21設於一第一線路結構20上,其中,該第一線路結構20係形成於承載板9上且具有相對之第一側20a與第二側20b,該第一線路結構20以其第二側20b結合至該承載板9上,而該線路構件21係設於該第一線路結構20之第一側20a上。另一方面,於該第一線路結構20之第一側20a上亦形成複數電性連接該第一線路結構20之導電柱23,其中,該線路構件21與該導電柱23之設置順序可依需求選擇先後順序。
As shown in Figure 2B, the
於本實施例中,該第一線路結構20係包括至少一第一絕緣層200與設於該第一絕緣層200上之第一線路重佈層(RDL)201。例如,形成該第一線路重佈層201之材質係為銅,且形成該第一絕緣層200之材質係為如聚對二唑苯(PBO)、聚醯亞胺(PI)、預浸材(PP)或其它等之介電材。
In this embodiment, the
再者,該承載板9係例如為半導體材質(如矽或玻璃)之圓形板體,其上以塗佈方式依序形成有一離型層90與一黏著層91,以供該第一線路結構20設於該黏著層91上。
Moreover, the
又,該導電柱23係設於該第一線路重佈層201上並電性連接該第一線路重佈層201,且形成該導電柱23之材質係為如銅之金屬材或銲錫材。
Moreover, the
另外,該線路構件21係以其底面21b藉由一如膠材之結合層24黏固於該第一線路結構20之第一側20a上。
In addition, the
如第2C圖所示,形成一包覆層25於該第一線路結構20之第一側20a上,以令該包覆層25包覆該線路構件21、結合層24、該複數導電體22與該複數導電柱23,再藉由整平製程,令該導電柱23之端面23a與該
導電體22之端面22a外露於該包覆層25,使該包覆層25之外表面齊平該導電柱23之端面23a與該導電體22之端面22a。
As shown in FIG. 2C, a
於本實施例中,該包覆層25係為絕緣材,如環氧樹脂之封裝膠體,其可用壓合(lamination)或模壓(molding)之方式形成於該第一線路結構20之第一側20a上。
In this embodiment, the
再者,該整平製程係藉由研磨方式,移除該導電柱23之部分材質、該導電體22之部分材質與該包覆層25之部分材質。
Moreover, the flattening process removes part of the material of the
如第2D圖所示,形成一第二線路結構26於該包覆層25上,且該第二線路結構26電性連接該導電柱23與該導電體22。
As shown in FIG. 2D , a
於本實施例中,該第二線路結構26係包括複數第二絕緣層260、及設於該第二絕緣層260上之複數第二線路重佈層(RDL)261,且最外層之第二絕緣層260可作為防銲層,以令最外層之第二線路重佈層261外露於該防銲層。或者,該第二線路結構26亦可僅包括單一第二絕緣層260及單一第二線路重佈層261。
In this embodiment, the
再者,形成該第二線路重佈層261之材質係為銅,且形成該第二絕緣層260之材質係為如聚對二唑苯(PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)或其它等之介電材。
Moreover, the material forming the
如第2E圖所示,移除該承載板9及其上之離型層90與黏著層91,以外露該第一線路結構20,進而形成本發明之承載基板2。
As shown in FIG. 2E , the
因此,本發明之承載基板2之製法中,主要藉由現有封裝製程將該線路構件21嵌埋於該包覆層25中,以增加佈線區,故相較於習知技術,對於大尺寸板面的封裝基板之需求,本發明之承載基板2之製法不
僅具有量產性,且單一承載基板2之製作成本極低,因而極具市場競爭力。
Therefore, in the manufacturing method of the
再者,該第一線路結構20(或該第二線路結構26)係用於調配該線路構件21之佈線層數,使該線路構件21之佈線層數降低,以提高該線路構件21之製作良率。
Furthermore, the first circuit structure 20 (or the second circuit structure 26) is used to adjust the number of wiring layers of the
如第2F圖所示,該承載基板2可於最外層之第二線路重佈層261上接置一個或複數電子元件30,以形成電子封裝件3,另該承載基板2可於該第一線路結構20之第二側20b上形成複數如銲球之導電元件27。
As shown in Figure 2F, the
於本實施例中,可形成一如防銲層之絕緣保護層28於該第一線路結構20之第二側20b上,且形成複數開孔於該絕緣保護層28上,以令該第一線路重佈層201外露於該複數開孔,俾供結合複數該導電元件27。
In this embodiment, an insulating
再者,該電子元件30係為主動元件、被動元件或其二者組合等,其中,該主動元件係例如半導體晶片,且該被動元件係例如電阻、電容及電感。例如,該電子元件30係為半導體晶片,其具有相對之作用面30a與非作用面30b,且以其作用面30a之電極墊300藉由複數如銲錫材料之導電凸塊29採用覆晶方式設於該第二線路重佈層261上並電性連接該第二線路重佈層261,且以底膠33包覆該導電凸塊29;或者,該電子元件30以其非作用面30b設於該該第二線路結構26上,並可藉由複數銲線(圖略)以打線方式電性連接該第二線路重佈層261;亦或透過如導電膠或銲錫等導電材料(圖略)電性連接該第二線路重佈層261。然而,有關該電子元件30電性連接該第二線路重佈層261之方式不限於上述。
Furthermore, the
又,可形成一凸塊底下金屬層(Under Bump Metallurgy,簡稱UBM)290於最外層之第二線路重佈層261上,以利於結合該導電凸塊29。
In addition, an under bump metallurgy (UBM) 290 may be formed on the outermost
如第2G圖所示,沿如第2F圖所示之切割路徑S進行切單製程,以令該承載基板2於後續製程中藉由該導電元件27接置於一如封裝結構或如電路板之電子裝置4上。
As shown in FIG. 2G, the singulation process is performed along the cutting path S shown in FIG. 2F, so that the
於本實施例中,該電子封裝件3可依需求配置一散熱件3a,其包含有支撐腳31及散熱體32,且以其支撐腳31藉由黏著層310結合於該第二線路結構26上,並使該散熱件3a之散熱體32藉由導熱介面層320結合該電子元件30。例如,複數支撐腳31係一體成形於該散熱體32上;或者,複數支撐腳31亦可以接合方式設於該散熱體32上。
In this embodiment, the
再者,該導熱介面層320亦可先形成於該散熱體32上,再將該散熱體32以該導熱介面層320結合至該電子元件30之非作用面30b上。同理地,該黏著層310亦可先形成於該支撐腳31上,再將該支撐腳31藉由該黏著層310結合至該第二線路結構26上。
Moreover, the heat
又,為了提升該導熱介面層320與該電子元件30之間的接著強度,可於該電子元件30之表面上覆金(即所謂之Coating Gold On Chip Back)。具體地,於該電子元件30之非作用面30b與該散熱體32之表面上形成一金層,且進一步配合助焊劑(flux),以利於該導熱介面層320接著於該金層上。
Moreover, in order to enhance the bonding strength between the
另外,於其它實施例中,該承載基板2’可省略該導電柱23之製作,如第2G’圖所示。或者,如第2G”圖所示之承載基板2”,該線路構件21於相對兩側上均結合並電性連接複數導電體22,22’,且其中一側之
導電體22係電性連接該第二線路結構26,而另一側之導電體22’係電性連接該第一線路結構20之第一線路重佈層201’。
In addition, in other embodiments, the carrier substrate 2' can omit the fabrication of the
第3A至3B圖係為本發明之承載基板3b之製法之第二實施例的剖面示意圖。本實施例與第一實施例之差異在於省略第二線路結構之製程,其它製程大致相同,故以下不再贅述相同處。
3A to 3B are schematic cross-sectional views of the second embodiment of the manufacturing method of the
如第3A圖所示,係採用第2G’,圖所示之線路構件21進行第2A至2C圖所示之製程,包括:提供複數線路構件21,各該線路構件21於相對兩側上均結合並電性連接複數導電體22,22’,將複數線路構件21及複數導電柱23電性連接至位於承載板9上之第一線路結構20,接著形成包覆層25並進行整平製程。
As shown in Figure 3A, the process shown in Figures 2A to 2C is carried out using the
如第3B圖所示,移除該承載板9及其上之離型層90與黏著層91,以外露該第一線路結構20之第二側20b,進而形成本發明之承載基板3b。
As shown in FIG. 3B , the
因此,本發明之承載基板3b之製法中,主要藉由現有封裝製程將該線路構件21嵌埋於該包覆層25中,以增加佈線區,故相較於習知技術,對於大尺寸板面的封裝基板之需求,本發明之承載基板3b之製法不僅具有量產性,且單一承載基板3b之製作成本極低,因而極具市場競爭力。
Therefore, in the manufacturing method of the
再者,該第一線路結構20係用於調配該線路構件21之佈線層數,使該線路構件21之佈線層數降低,以提高該線路構件21之製作良率。
Furthermore, the
如第3C圖所示,該承載基板3b可於該第一線路結構20之第二側20b之第一線路重佈層201上接置一個或複數電子元件30,另該承載基板3b可於該線路構件21上藉由該些導電體22結合複數如銲球之導電元
件27,以令該承載基板3b於後續製程中藉由該些導電元件27接置於一如第2G圖所示之電子裝置4上。
As shown in FIG. 3C, the
如第3D圖所示,沿如第3C圖所示之切割路徑S進行切單製程,以獲取電子封裝件3’。 As shown in FIG. 3D, a singulation process is performed along the cutting path S shown in FIG. 3C to obtain an electronic package 3'.
本發明亦提供一種電子封裝件3,3’,係包括一承載基板2,2’,2”,3b以及至少一設於該承載基板2,2’,2”,3b其中一側上之電子元件30,其中,該承載基板2,2’,2”,3b包括:一第一線路結構20、一線路構件21以及一包覆層25。
The present invention also provides an
所述之第一線路結構20係具有相對之第一側20a與第二側20b,該第一側20a上可依需求形成有複數導電柱23,且該導電柱23電性連接該第一線路結構20。
The
所述之線路構件21係設於該第一線路結構20之第一側20a上,且該線路構件21上係結合並電性連接複數導電體22,22’。
The
所述之包覆層25係形成於該第一線路結構20之第一側20a上,以令該包覆層25包覆該線路構件21、該導電體22,22’與該導電柱23,且令該導電柱23之端面23a與該導電體22之端面22a外露於該包覆層25。
The
於一實施例中,該線路構件21係藉由複數導電體22’電性連接該第一線路結構20。
In one embodiment, the
於一實施例中,所述之電子封裝件3,3’復包括複數導電元件27,係形成於該承載基板2,2’,2”,3b之另一側上。
In one embodiment, the
於一實施例中,所述之承載基板2,2’,2”復包括第二線路結構26,係形成於該包覆層25上,且該第二線路結構26電性連接該導電柱23,並藉由該導電體22電性連接該線路構件21。又包括形成於該第二線路結構26上之複數導電凸塊29。
In one embodiment, the
於一實施例中,該電子元件30係為主動元件、被動元件或其二者組合。
In one embodiment, the
於一實施例中,所述之電子封裝件3復包括一配置於該第二線路結構26上之散熱件3a。例如,該散熱件3a係接觸該電子元件30。
In one embodiment, the
綜上所述,本發明之電子封裝件及其承載基板與製法中,係藉由現有封裝製程將線路構件設置於第一線路結構上並嵌埋於包覆層中,以增加佈線區,故對於大尺寸板面的封裝基板之需求,本發明之承載基板不僅具有量產性,且單一承載基板之製作成本極低,因而極具市場競爭力。 To sum up, in the electronic package and its carrier substrate and its manufacturing method of the present invention, the circuit components are arranged on the first circuit structure and embedded in the cladding layer through the existing packaging process to increase the wiring area, so To meet the demand for packaging substrates with large-size boards, the carrier substrate of the present invention not only has the capability of mass production, but also the manufacturing cost of a single carrier substrate is extremely low, so it is very competitive in the market.
再者,該線路結構係可用於調配該線路構件之佈線層數,使該線路構件之佈線層數降低,進而提升該線路構件之製作良率。 Furthermore, the circuit structure can be used to adjust the number of wiring layers of the circuit component, so as to reduce the number of wiring layers of the circuit component, thereby improving the production yield of the circuit component.
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above-mentioned embodiments are used to illustrate the principles and effects of the present invention, but not to limit the present invention. Any person skilled in the art can modify the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be listed in the scope of the patent application described later.
2:承載基板 2: Carrier substrate
20:第一線路結構 20: The first line structure
20a:第一側 20a: First side
20b:第二側 20b: Second side
21:線路構件 21: Line components
22:導電體 22: Conductor
23:導電柱 23: Conductive column
25:包覆層 25: cladding layer
26:第二線路結構 26: Second line structure
Claims (24)
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US16/554,779 US11923337B2 (en) | 2019-05-03 | 2019-08-29 | Carrying substrate, electronic package having the carrying substrate, and methods for manufacturing the same |
US18/464,855 US12125828B2 (en) | 2019-05-03 | 2023-09-11 | Carrying substrate, electronic package having the carrying substrate, and methods for manufacturing the same |
US18/888,834 US20250015054A1 (en) | 2019-05-03 | 2024-09-18 | Carrying substrate, electronic package having the carrying substrate, and methods for manufacturing the same |
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US20070069371A1 (en) * | 2005-09-29 | 2007-03-29 | United Test And Assembly Center Ltd. | Cavity chip package |
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