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TW202042368A - Carrying substrate, electronic package having the carrying substrate, and methods for manufacturing the same - Google Patents

Carrying substrate, electronic package having the carrying substrate, and methods for manufacturing the same Download PDF

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Publication number
TW202042368A
TW202042368A TW108126794A TW108126794A TW202042368A TW 202042368 A TW202042368 A TW 202042368A TW 108126794 A TW108126794 A TW 108126794A TW 108126794 A TW108126794 A TW 108126794A TW 202042368 A TW202042368 A TW 202042368A
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carrier substrate
circuit
circuit structure
patent application
scope
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TW108126794A
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Chinese (zh)
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TWI802726B (en
Inventor
何祈慶
馬伯豪
薛宇廷
曾景鴻
陸冠華
張宏達
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矽品精密工業股份有限公司
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Priority to CN201910728198.8A priority Critical patent/CN111883506B/en
Priority to US16/554,779 priority patent/US11923337B2/en
Publication of TW202042368A publication Critical patent/TW202042368A/en
Application granted granted Critical
Publication of TWI802726B publication Critical patent/TWI802726B/en
Priority to US18/464,855 priority patent/US12125828B2/en
Priority to US18/888,834 priority patent/US20250015054A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

This invention relates to an automatic labeling method for detecting moving objects, which is suitable for obtaining the object information in the multimedia image file to mark the range and position, and then storing the image, the object feature conversion string and the object tag coordinate in the feature object database in order to manage and use a huge amount of feature object data.

Description

電子封裝件及其承載基板與製法 Electronic package and its carrying substrate and manufacturing method

本發明係有關一種封裝結構,尤指一種電子封裝件及其承載基板與製法。 The invention relates to a packaging structure, in particular to an electronic packaging component and its supporting substrate and manufacturing method.

隨著電子產品在功能及處理速度之需求的提升,作為電子產品之核心組件的半導體晶片需具有更高密度之線路構件(Electronic Components)及電子電路(Electronic Circuits),故半導體晶片在運作時將隨之產生大量的熱能,此外,包覆該半導體晶片之封裝膠體係為一種導熱係數僅0.8Wm-1k-1之不良傳熱材質(即熱量之逸散效率不佳),因而若不能有效逸散所產生之熱量,將會造成半導體晶片之損害或造成產品信賴性問題。 With the increase in the function and processing speed of electronic products, semiconductor chips, which are the core components of electronic products, need to have higher-density circuit components (Electronic Components) and electronic circuits (Electronic Circuits), so semiconductor chips will A large amount of heat energy is generated accordingly. In addition, the encapsulant system covering the semiconductor chip is a poor heat transfer material with a thermal conductivity of only 0.8Wm-1k-1 (that is, the heat dissipation efficiency is not good), so if it cannot effectively escape The heat generated by the dissipation will cause damage to the semiconductor chip or cause product reliability problems.

為了能迅速將熱能散逸至大氣中,業界通常在半導體封裝結構中配置散熱片(Heat Sink或Heat Spreader),該散熱片藉由散熱膠,如導熱介面材(Thermal Interface Material,簡稱TIM),結合至半導體晶片背面,以藉散熱膠與散熱片逸散出半導體晶片所產生之熱量,再 者,通常令散熱片之頂面外露出封裝膠體或直接外露於大氣中為佳,俾取得較佳之散熱效果。 In order to quickly dissipate the heat energy into the atmosphere, the industry usually configures a heat sink (Heat Sink or Heat Spreader) in the semiconductor package structure. The heat sink is combined with a heat sink, such as a thermal interface material (TIM). To the back of the semiconductor chip to dissipate the heat generated by the semiconductor chip through the heat sink and heat sink, and then Furthermore, it is usually better to expose the encapsulant on the top surface of the heat sink or directly expose it to the atmosphere in order to obtain a better heat dissipation effect.

如第1圖所示,習知半導體封裝件1之製法係先將一半導體晶片11以其作用面11a利用覆晶接合方式(即透過導電凸塊110與底膠111)設於一封裝基板10上,再將一散熱件13以其頂片130藉由TIM層12(其包含銲錫層與助焊劑)回銲結合於該半導體晶片11之非作用面11b上,且該散熱件13之支撐腳131藉由黏著層14架設於該封裝基板10上。接著,進行封裝壓模作業,以供封裝膠體(圖略)包覆該半導體晶片11及散熱件13,並使該散熱件13之頂片130外露出封裝膠體而直接與大氣接觸。之後,將該半導體封裝件1以其封裝基板10藉由複數銲球15接置於一電路板8上。 As shown in Figure 1, the conventional method for manufacturing a semiconductor package 1 is to first place a semiconductor chip 11 with its active surface 11a on a package substrate 10 by flip chip bonding (ie through conductive bumps 110 and primer 111). Then, a heat sink 13 is reflow-bonded to the non-acting surface 11b of the semiconductor chip 11 with its top sheet 130 through the TIM layer 12 (which includes a solder layer and flux), and the supporting legs of the heat sink 13 131 is mounted on the packaging substrate 10 via the adhesive layer 14. Then, a packaging press molding operation is performed to provide a packaging compound (not shown in the figure) to cover the semiconductor chip 11 and the heat sink 13, and to expose the packaging compound to the top plate 130 of the heat sink 13 to directly contact the atmosphere. After that, the semiconductor package 1 and its package substrate 10 are connected to a circuit board 8 through a plurality of solder balls 15.

於運作時,該半導體晶片11所產生之熱能係經由該非作用面11b、TIM層12而傳導至該散熱件13之頂片130以散熱至該半導體封裝件1之外部。 During operation, the heat generated by the semiconductor chip 11 is conducted to the top sheet 130 of the heat sink 13 via the inactive surface 11b and the TIM layer 12 to dissipate heat to the outside of the semiconductor package 1.

然而,隨著產業應用的發展,近年來逐漸朝著大尺寸封裝規格之趨勢進行研發,以應用於高密度線路/高傳輸速度/高疊層數/大尺寸設計之高階產品。 However, with the development of industrial applications, in recent years, R&D has been gradually moving towards the trend of large-size packaging specifications for applications in high-end products with high-density circuits/high transmission speed/high stack count/large-size designs.

惟,習知半導體封裝件1中,對於大尺寸板面的封裝基板10之需求,如板體尺寸100*100mm2的需求,尚不具量產性,且單一板體之製作成本極高,因而不具市場競爭力。 However, in the conventional semiconductor package 1, the requirement for a large-scale package substrate 10, such as the requirement of a board size of 100*100mm 2 , is not yet mass-produced, and the production cost of a single board is extremely high. Not competitive in the market.

因此,如何克服上述習知技術之種種問題,實已成為目前業界亟待克服之難題。 Therefore, how to overcome the above-mentioned problems of the conventional technology has actually become a problem that the industry urgently needs to overcome.

鑑於上述習知技術之種種缺失,本發明提供一種承載基板,係包括:一第一線路結構,係具有相對之第一側與第二側;至少一線路構件,係設於該第一線路結構之第一側上;以及一包覆層,係形成於該第一線路結構之第一側上以包覆該線路構件。 In view of the various deficiencies of the above-mentioned conventional technologies, the present invention provides a carrier substrate, which includes: a first circuit structure having opposite first and second sides; at least one circuit member arranged on the first circuit structure And a coating layer formed on the first side of the first circuit structure to cover the circuit member.

本發明亦提供一種承載基板之製法,係包括:提供一具有相對之第一側與第二側的第一線路結構;設置至少一線路構件於該第一線路結構之第一側上;以及形成包覆層於該第一線路結構之第一側上,以令該包覆層包覆該線路構件。 The present invention also provides a method for manufacturing a carrier substrate, which includes: providing a first circuit structure having opposite first and second sides; arranging at least one circuit member on the first side of the first circuit structure; and forming The coating layer is on the first side of the first circuit structure so that the coating layer covers the circuit component.

前述之承載基板及其製法中,復包括形成第二線路結構於該包覆層上,且令該第二線路結構電性連接該線路構件。例如,該線路構件藉由複數導電體電性連接該第二線路結構。又包括形成導電柱於該第一線路結構之第一側上,以令該包覆層包覆該導電柱,且該導電柱電性連接該第一線路結構與第二線路結構。或者,可包括形成複數導電凸塊於該第二線路結構上。 In the aforementioned carrier substrate and its manufacturing method, it further includes forming a second circuit structure on the coating layer, and electrically connecting the second circuit structure to the circuit member. For example, the circuit member is electrically connected to the second circuit structure through a plurality of conductors. The method further includes forming a conductive pillar on the first side of the first circuit structure, so that the coating layer covers the conductive pillar, and the conductive pillar is electrically connected to the first circuit structure and the second circuit structure. Alternatively, it may include forming a plurality of conductive bumps on the second circuit structure.

前述之承載基板及其製法中,該包覆層係包覆至少四個該線路構件。 In the aforementioned carrier substrate and its manufacturing method, the coating layer covers at least four of the circuit components.

前述之承載基板及其製法中,該線路構件係為封裝基板。 In the aforementioned carrier substrate and its manufacturing method, the circuit member is a package substrate.

前述之承載基板及其製法中,該線路構件係為無核心層之線路結構。 In the aforementioned carrier substrate and its manufacturing method, the circuit component is a circuit structure without a core layer.

前述之承載基板及其製法中,該線路構件係具有矽穿孔結構。 In the aforementioned carrier substrate and its manufacturing method, the circuit member has a silicon via structure.

前述之承載基板及其製法中,該線路構件藉由複數導電體電性連接該第一線路結構。 In the aforementioned carrier substrate and its manufacturing method, the circuit member is electrically connected to the first circuit structure through a plurality of conductors.

本發明復一種電子封裝件,係包括:一前述之承載基板;以及至少一電子元件,係設於該承載基板之第一側與第二側之其中一者上。 Another electronic package of the present invention includes: a carrier substrate as described above; and at least one electronic component disposed on one of the first side and the second side of the carrier substrate.

本發明更提供一種電子封裝件之製法,係包括:提供一前述之承載基板;以及設置至少一電子元件於該承載基板之第一側與第二側之其中一者上。 The present invention further provides a method for manufacturing an electronic package, which includes: providing a carrier substrate as described above; and arranging at least one electronic component on one of the first side and the second side of the carrier substrate.

前述之電子封裝件及其製法中,該電子元件係為主動元件、被動元件或其二者組合。 In the aforementioned electronic package and its manufacturing method, the electronic component is an active component, a passive component or a combination of both.

前述之電子封裝件及其製法中,復包括形成複數導電元件於該承載基板之第一側與第二側中未設有該電子元件之者上。 The aforementioned electronic package and its manufacturing method further include forming a plurality of conductive elements on the first side and the second side of the carrier substrate where the electronic element is not provided.

前述之電子封裝件及其製法中,復包括配置散熱件於該承載基板上。例如,該散熱件係接觸該電子元件。 In the aforementioned electronic package and its manufacturing method, it further includes disposing a heat sink on the carrier substrate. For example, the heat sink is in contact with the electronic component.

由上可知,本發明之電子封裝件及其承載基板與製法中,主要藉由將線路構件設置於第一線路結構上並嵌埋於包覆層中,以增加佈線區,故相較於習知技術,對於大尺寸板面的封裝基板之需求,本發明不僅具有量產性,且單一承載基板之製作成本極低,因而極具市場競爭力。 It can be seen from the above that in the electronic package and its carrier substrate and manufacturing method of the present invention, the circuit components are mainly arranged on the first circuit structure and embedded in the cladding layer to increase the wiring area. According to the known technology, the present invention is not only mass-productive, but also extremely competitive in the market due to the requirement for packaging substrates with large-size boards.

再者,該線路結構係用於調配該線路構件之佈線層數,使該線路構件之佈線層數降低,以提高該線路構件之製作良率。 Furthermore, the circuit structure is used to adjust the number of wiring layers of the circuit member, so that the number of wiring layers of the circuit member is reduced, so as to improve the production yield of the circuit member.

1‧‧‧半導體封裝件 1‧‧‧Semiconductor package

10‧‧‧封裝基板 10‧‧‧Packaging substrate

11‧‧‧半導體晶片 11‧‧‧Semiconductor chip

11a,30a‧‧‧作用面 11a,30a‧‧‧working surface

11b,30b‧‧‧非作用面 11b,30b‧‧‧Non-acting surface

110,29‧‧‧導電凸塊 110,29‧‧‧Conductive bump

111,33‧‧‧底膠 111,33‧‧‧ Primer

12‧‧‧TIM層 12‧‧‧TIM layer

13,3a‧‧‧散熱件 13,3a‧‧‧Radiator

130‧‧‧頂片 130‧‧‧Top Film

131,31‧‧‧支撐腳 131,31‧‧‧Support foot

14,91,310‧‧‧黏著層 14,91,310‧‧‧Adhesive layer

15‧‧‧銲球 15‧‧‧Solder ball

2,2’,2”,3a‧‧‧承載基板 2,2’,2”,3a‧‧‧Carrier substrate

2a‧‧‧線路板塊 2a‧‧‧Circuit board

20‧‧‧第一線路結構 20‧‧‧The first line structure

20a‧‧‧第一側 20a‧‧‧First side

20b‧‧‧第二側 20b‧‧‧Second side

200‧‧‧第一絕緣層 200‧‧‧First insulation layer

201,201’‧‧‧第一線路重佈層 201,201’‧‧‧Relay layer of the first line

21‧‧‧線路構件 21‧‧‧Line components

21a‧‧‧頂面 21a‧‧‧Top surface

21b‧‧‧底面 21b‧‧‧Bottom

210‧‧‧線路層 210‧‧‧Line layer

211‧‧‧絕緣體 211‧‧‧Insulator

212‧‧‧保護膜 212‧‧‧Protective Film

213‧‧‧電性接觸墊 213‧‧‧Electrical contact pad

22,22’‧‧‧導電體 22,22’‧‧‧Conductor

22a,23a‧‧‧端面 22a,23a‧‧‧end face

23‧‧‧導電柱 23‧‧‧Conductive post

24‧‧‧結合層 24‧‧‧Combination layer

25‧‧‧包覆層 25‧‧‧Coating

26‧‧‧第二線路結構 26‧‧‧Second line structure

260‧‧‧第二絕緣層 260‧‧‧Second insulating layer

261‧‧‧第二線路重佈層 261‧‧‧Second line re-layout

27‧‧‧導電元件 27‧‧‧Conductive element

28‧‧‧絕緣保護層 28‧‧‧Insulation protection layer

290‧‧‧凸塊底下金屬層 290‧‧‧Metal layer under bump

3,3’‧‧‧電子封裝件 3,3’‧‧‧Electronic package

30‧‧‧電子元件 30‧‧‧Electronic components

300‧‧‧電極墊 300‧‧‧electrode pad

32‧‧‧散熱體 32‧‧‧Radiator

320‧‧‧導熱介面層 320‧‧‧ Thermal Interface Layer

4‧‧‧電子裝置 4‧‧‧Electronic device

8‧‧‧電路板 8‧‧‧Circuit board

9‧‧‧承載板 9‧‧‧Carrier plate

90‧‧‧離型層 90‧‧‧Release layer

S‧‧‧切割路徑 S‧‧‧cutting path

第1圖係為習知半導體封裝件之剖視示意圖。 Figure 1 is a schematic cross-sectional view of a conventional semiconductor package.

第2A至2E圖係為本發明之承載基板之製法之第一實施例的剖視示意圖。 2A to 2E are schematic cross-sectional views of the first embodiment of the manufacturing method of the carrier substrate of the present invention.

第2F至2G圖係為本發明之電子封裝件之製法之第一實施例的剖視示意圖。 2F to 2G are schematic cross-sectional views of the first embodiment of the manufacturing method of the electronic package of the present invention.

第2G’圖係為第2G圖之另一態樣之剖視示意圖。 Fig. 2G' is a schematic cross-sectional view of another aspect of Fig. 2G.

第2G”圖係為第2E圖之另一態樣之剖視示意圖。 Figure 2G" is a schematic cross-sectional view of another aspect of Figure 2E.

第3A至3B圖係為本發明之承載基板之製法之第二實施例的剖視示意圖。 3A to 3B are schematic cross-sectional views of the second embodiment of the manufacturing method of the carrier substrate of the present invention.

第3C至3D圖係為本發明之電子封裝件之製法之第二實施例的剖視示意圖。 3C to 3D are schematic cross-sectional views of the second embodiment of the manufacturing method of the electronic package of the present invention.

以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following specific examples illustrate the implementation of the present invention. Those familiar with the art can easily understand the other advantages and effects of the present invention from the contents disclosed in this specification.

須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」、「第一」、「第二」及「一」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可 實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structures, proportions, sizes, etc. shown in the drawings in this manual are only used to match the contents disclosed in the manual for the understanding and reading of those familiar with the art, and are not intended to limit the implementation of the present invention Therefore, it does not have any technical significance. Any structural modification, proportional relationship change, or size adjustment should still fall within the scope of the present invention without affecting the effects and objectives that can be achieved. The technical content disclosed by the invention can be covered. At the same time, the terms such as "on", "first", "second" and "one" cited in this manual are only for ease of description, not to limit the scope of the present invention. The scope of implementation, and the change or adjustment of the relative relationship, shall be regarded as the scope of the present invention which can be implemented without substantially changing the technical content.

第2A至2E圖係為本發明之承載基板2之製法之第一實施例的剖面示意圖。 2A to 2E are schematic cross-sectional views of the first embodiment of the manufacturing method of the carrier substrate 2 of the present invention.

如第2A圖所示,提供一線路板塊2a,其包含複數線路構件21。 As shown in FIG. 2A, a circuit board 2a is provided, which includes a plurality of circuit members 21.

於本實施例中,該線路構件21係為如具有核心層與線路結構之封裝基板(substrate)或無核心層(coreless)之線路結構(圖中係呈現coreless型),其具有絕緣體211及結合該絕緣體211之複數線路層210,如扇出(fan out)型重佈線路層(redistribution layer,簡稱RDL),且形成該絕緣體211之材質係為如聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)或其它等之介電材;或者,該線路構件21可具有矽穿孔(Through Silicon Via,簡稱TSV)結構。應可理解地,該線路構件21亦可為其它配置佈線之板體,如有機板材(organic material)、半導體板材(silicon)、陶瓷板材(ceramic)或其它具有金屬佈線(routing)之載板,並不限於上述。 In this embodiment, the circuit member 21 is a package substrate with a core layer and a circuit structure or a circuit structure without a core layer (coreless in the figure), which has an insulator 211 and a combination The plurality of circuit layers 210 of the insulator 211, such as a fan out (fan out) redistribution layer (RDL), and the material forming the insulator 211 is, for example, polybenzoxazole (PBO) , Polyimide (PI for short), Prepreg (PP for short) or other dielectric materials; alternatively, the circuit member 21 may have a Through Silicon Via (TSV for short) structure. It should be understood that the circuit member 21 can also be other boards configured with wiring, such as organic material, silicon, ceramic, or other carrier boards with metal routing. It is not limited to the above.

再者,該線路構件21上係結合並電性連接複數導電體22,且該導電體22係為如導電線路、銲球之圓球狀、或如銅柱、銲錫凸塊等金屬材之柱狀、或銲線機製作之釘狀(stud),但不限於此。另外,該線路構件21之頂面21a可形成有一如鈍化材之保護膜212,以令部分線路層210(如複數電性接觸墊213)外露出該保護膜212,且該導電體22形成於該電性接觸墊213上並凸出該保護膜212。 Furthermore, a plurality of conductors 22 are combined and electrically connected to the circuit member 21, and the conductor 22 is a column of metal materials such as a conductive circuit, a solder ball, or a metal material such as a copper column, a solder bump, etc. Shape, or stud made by wire bonding machine, but not limited to this. In addition, the top surface 21a of the circuit member 21 can be formed with a protective film 212 such as a passivation material, so that a part of the circuit layer 210 (such as a plurality of electrical contact pads 213) is exposed to the protective film 212, and the conductor 22 is formed on The protective film 212 protrudes on the electrical contact pad 213.

如第2B圖所示,切割該線路板塊2a以獲取複數線路構件21,再將一個或複數個(如圖所示之四個以上)線路構件21設於一第一線路結構20上,其中,該第一線路結構20係形成於承載板9上且具有相對之第一側20a與第二側20b,該第一線路結構20以其第二側20b結合至該承載板9上,而該線路構件21係設於該第一線路結構20之第一側20a上。另一方面,於該第一線路結構20之第一側20a上亦形成複數電性連接該第一線路結構20之導電柱23,其中,該線路構件21與該導電柱23之設置順序可依需求選擇先後順序。 As shown in Figure 2B, the circuit block 2a is cut to obtain a plurality of circuit members 21, and then one or more (more than four as shown in the figure) circuit members 21 are arranged on a first circuit structure 20, wherein, The first circuit structure 20 is formed on the supporting board 9 and has a first side 20a and a second side 20b opposite to each other. The first circuit structure 20 is connected to the supporting board 9 with its second side 20b, and the circuit The member 21 is arranged on the first side 20 a of the first circuit structure 20. On the other hand, a plurality of conductive pillars 23 electrically connected to the first circuit structure 20 are also formed on the first side 20a of the first circuit structure 20, wherein the arrangement order of the circuit member 21 and the conductive pillar 23 can be The order of demand selection.

於本實施例中,該第一線路結構20係包括至少一第一絕緣層200與設於該第一絕緣層200上之第一線路重佈層(RDL)201。例如,形成該第一線路重佈層201之材質係為銅,且形成該第一絕緣層200之材質係為如聚對二唑苯(PBO)、聚醯亞胺(PI)、預浸材(PP)或其它等之介電材。 In this embodiment, the first circuit structure 20 includes at least a first insulating layer 200 and a first redistributed circuit layer (RDL) 201 disposed on the first insulating layer 200. For example, the material for forming the first circuit redistribution layer 201 is copper, and the material for forming the first insulating layer 200 is such as polypara-diazole benzene (PBO), polyimide (PI), and prepreg. (PP) or other dielectric materials.

再者,該承載板9係例如為半導體材質(如矽或玻璃)之圓形板體,其上以塗佈方式依序形成有一離型層90與一黏著層91,以供該第一線路結構20設於該黏著層91上。 Furthermore, the carrier board 9 is, for example, a circular board made of semiconductor material (such as silicon or glass), on which a release layer 90 and an adhesive layer 91 are sequentially formed by coating for the first circuit The structure 20 is provided on the adhesive layer 91.

又,該導電柱23係設於該第一線路重佈層201上並電性連接該第一線路重佈層201,且形成該導電柱23之材質係為如銅之金屬材或銲錫材。 In addition, the conductive pillar 23 is disposed on the first circuit redistribution layer 201 and electrically connected to the first circuit redistribution layer 201, and the material for forming the conductive pillar 23 is a metal material such as copper or a solder material.

另外,該線路構件21係以其底面21b藉由一如膠材之結合層24黏固於該第一線路結構20之第一側20a上。 In addition, the circuit member 21 is fixed on the first side 20a of the first circuit structure 20 with its bottom surface 21b through a bonding layer 24 such as glue.

如第2C圖所示,形成一包覆層25於該第一線路結構20之第一側20a上,以令該包覆層25包覆該線路構件21、結合層24、該複數導電體22與該複數導電柱23,再藉由整平製程,令該導電柱23之端面23a與該 導電體22之端面22a外露於該包覆層25,使該包覆層25之外表面齊平該導電柱23之端面23a與該導電體22之端面22a。 As shown in FIG. 2C, a coating layer 25 is formed on the first side 20a of the first circuit structure 20, so that the coating layer 25 covers the circuit member 21, the bonding layer 24, and the plurality of conductors 22 And the plurality of conductive pillars 23, and then through the leveling process, the end surface 23a of the conductive pillar 23 and the The end surface 22 a of the conductor 22 is exposed to the coating layer 25, so that the outer surface of the coating layer 25 is flush with the end surface 23 a of the conductive pillar 23 and the end surface 22 a of the conductor 22.

於本實施例中,該包覆層25係為絕緣材,如環氧樹脂之封裝膠體,其可用壓合(lamination)或模壓(molding)之方式形成於該第一線路結構20之第一側20a上。 In this embodiment, the coating layer 25 is an insulating material, such as an epoxy resin encapsulant, which can be formed on the first side of the first circuit structure 20 by lamination or molding. On 20a.

再者,該整平製程係藉由研磨方式,移除該導電柱23之部分材質、該導電體22之部分材質與該包覆層25之部分材質。 Furthermore, the leveling process is to remove part of the material of the conductive pillar 23, part of the material of the conductor 22, and part of the material of the coating layer 25 by grinding.

如第2D圖所示,形成一第二線路結構26於該包覆層25上,且該第二線路結構26電性連接該導電柱23與該導電體22。 As shown in FIG. 2D, a second circuit structure 26 is formed on the cladding layer 25, and the second circuit structure 26 is electrically connected to the conductive pillar 23 and the conductor 22.

於本實施例中,該第二線路結構26係包括複數第二絕緣層260、及設於該第二絕緣層260上之複數第二線路重佈層(RDL)261,且最外層之第二絕緣層260可作為防銲層,以令最外層之第二線路重佈層261外露於該防銲層。或者,該第二線路結構26亦可僅包括單一第二絕緣層260及單一第二線路重佈層261。 In this embodiment, the second circuit structure 26 includes a plurality of second insulating layers 260, and a plurality of second circuit redistribution layers (RDL) 261 disposed on the second insulating layer 260, and the second outermost layer The insulating layer 260 can be used as a solder mask, so that the outermost second circuit redistribution layer 261 is exposed from the solder mask. Alternatively, the second circuit structure 26 can also only include a single second insulating layer 260 and a single second circuit redistribution layer 261.

再者,形成該第二線路重佈層261之材質係為銅,且形成該第二絕緣層260之材質係為如聚對二唑苯(PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)或其它等之介電材。 Furthermore, the material for forming the second circuit redistribution layer 261 is copper, and the material for forming the second insulating layer 260 is, for example, polyparabenzol (PBO) or polyimide (PI for short) , Prepreg (PP) or other dielectric materials.

如第2E圖所示,移除該承載板9及其上之離型層90與黏著層91,以外露該第一線路結構20,進而形成本發明之承載基板2。 As shown in FIG. 2E, the carrier board 9 and the release layer 90 and adhesive layer 91 thereon are removed to expose the first circuit structure 20, thereby forming the carrier substrate 2 of the present invention.

因此,本發明之承載基板2之製法中,主要藉由現有封裝製程將該線路構件21嵌埋於該包覆層25中,以增加佈線區,故相較於習知技術,對於大尺寸板面的封裝基板之需求,本發明之承載基板2之製法不 僅具有量產性,且單一承載基板2之製作成本極低,因而極具市場競爭力。 Therefore, in the manufacturing method of the carrier substrate 2 of the present invention, the circuit member 21 is embedded in the cladding layer 25 mainly by the existing packaging process to increase the wiring area. Therefore, compared with the conventional technology, it is suitable for large-size boards. The requirements of the packaging substrate of the present invention, the manufacturing method of the carrier substrate 2 of the present invention is not It only has mass production, and the manufacturing cost of a single carrier substrate 2 is extremely low, so it is extremely competitive in the market.

再者,該第一線路結構20(或該第二線路結構26)係用於調配該線路構件21之佈線層數,使該線路構件21之佈線層數降低,以提高該線路構件21之製作良率。 Furthermore, the first circuit structure 20 (or the second circuit structure 26) is used to adjust the number of wiring layers of the circuit member 21 to reduce the number of wiring layers of the circuit member 21 to improve the production of the circuit member 21 Yield rate.

如第2F圖所示,該承載基板2可於最外層之第二線路重佈層261上接置一個或複數電子元件30,以形成電子封裝件3,另該承載基板2可於該第一線路結構20之第二側20b上形成複數如銲球之導電元件27。 As shown in Figure 2F, the carrier substrate 2 can be connected to the outermost second circuit redistribution layer 261 with one or more electronic components 30 to form an electronic package 3, and the carrier substrate 2 can be placed on the first A plurality of conductive elements 27 such as solder balls are formed on the second side 20b of the circuit structure 20.

於本實施例中,可形成一如防銲層之絕緣保護層28於該第一線路結構20之第二側20b上,且形成複數開孔於該絕緣保護層28上,以令該第一線路重佈層201外露於該複數開孔,俾供結合複數該導電元件27。 In this embodiment, an insulating protective layer 28 such as a solder mask can be formed on the second side 20b of the first circuit structure 20, and a plurality of openings can be formed on the insulating protective layer 28 to make the first The circuit redistribution layer 201 is exposed to the plurality of openings for bonding the plurality of conductive elements 27.

再者,該電子元件30係為主動元件、被動元件或其二者組合等,其中,該主動元件係例如半導體晶片,且該被動元件係例如電阻、電容及電感。例如,該電子元件30係為半導體晶片,其具有相對之作用面30a與非作用面30b,且以其作用面30a之電極墊300藉由複數如銲錫材料之導電凸塊29採用覆晶方式設於該第二線路重佈層261上並電性連接該第二線路重佈層261,且以底膠33包覆該導電凸塊29;或者,該電子元件30以其非作用面30b設於該該第二線路結構26上,並可藉由複數銲線(圖略)以打線方式電性連接該第二線路重佈層261;亦或透過如導電膠或銲錫等導電材料(圖略)電性連接該第二線路重佈層261。然而,有關該電子元件30電性連接該第二線路重佈層261之方式不限於上述。 Furthermore, the electronic component 30 is an active component, a passive component, or a combination of the two, etc., wherein the active component is a semiconductor chip, and the passive component is a resistor, a capacitor, and an inductor. For example, the electronic component 30 is a semiconductor chip, which has an opposite active surface 30a and a non-active surface 30b, and the electrode pad 300 of its active surface 30a is arranged in a flip-chip manner by a plurality of conductive bumps 29 such as solder material. The second circuit redistribution layer 261 is electrically connected to the second circuit redistribution layer 261, and the conductive bump 29 is covered with a primer 33; or, the electronic component 30 is disposed on the non-active surface 30b On the second circuit structure 26, the second circuit redistribution layer 261 can be electrically connected by multiple bonding wires (the figure omitted); or through conductive materials such as conductive glue or solder (the figure omitted) The second line redistribution layer 261 is electrically connected. However, the manner in which the electronic component 30 is electrically connected to the second circuit redistribution layer 261 is not limited to the above.

又,可形成一凸塊底下金屬層(Under Bump Metallurgy,簡稱UBM)290於最外層之第二線路重佈層261上,以利於結合該導電凸塊29。 In addition, an under bump metallurgy (UBM) 290 can be formed on the outermost second circuit redistribution layer 261 to facilitate the bonding of the conductive bump 29.

如第2G圖所示,沿如第2F圖所示之切割路徑S進行切單製程,以令該承載基板2於後續製程中藉由該導電元件27接置於一如封裝結構或如電路板之電子裝置4上。 As shown in Fig. 2G, a singulation process is performed along the cutting path S shown in Fig. 2F, so that the carrier substrate 2 is connected to a package structure or a circuit board by the conductive element 27 in the subsequent process.的电子装置4上。 The electronic device 4 on.

於本實施例中,該電子封裝件3可依需求配置一散熱件3a,其包含有支撐腳31及散熱體32,且以其支撐腳31藉由黏著層310結合於該第二線路結構26上,並使該散熱件3a之散熱體32藉由導熱介面層320結合該電子元件30。例如,複數支撐腳31係一體成形於該散熱體32上;或者,複數支撐腳31亦可以接合方式設於該散熱體32上。 In this embodiment, the electronic package 3 can be configured with a heat sink 3a according to requirements, which includes a supporting leg 31 and a heat sink 32, and the supporting leg 31 is bonded to the second circuit structure 26 through an adhesive layer 310 And the heat sink 32 of the heat sink 3a is combined with the electronic component 30 through the thermal interface layer 320. For example, a plurality of supporting legs 31 are integrally formed on the heat sink 32; or, a plurality of supporting legs 31 may also be provided on the heat sink 32 in a joint manner.

再者,該導熱介面層320亦可先形成於該散熱體32上,再將該散熱體32以該導熱介面層320結合至該電子元件30之非作用面30b上。同理地,該黏著層310亦可先形成於該支撐腳31上,再將該支撐腳31藉由該黏著層310結合至該第二線路結構26上。 Furthermore, the thermally conductive interface layer 320 can also be formed on the heat sink 32 first, and then the radiator 32 is bonded to the non-active surface 30b of the electronic component 30 by the thermally conductive interface layer 320. Similarly, the adhesive layer 310 can also be formed on the supporting leg 31 first, and then the supporting leg 31 is bonded to the second circuit structure 26 through the adhesive layer 310.

又,為了提升該導熱介面層320與該電子元件30之間的接著強度,可於該電子元件30之表面上覆金(即所謂之Coating Gold On Chip Back)。具體地,於該電子元件30之非作用面30b與該散熱體32之表面上形成一金層,且進一步配合助焊劑(flux),以利於該導熱介面層320接著於該金層上。 In addition, in order to improve the bonding strength between the thermally conductive interface layer 320 and the electronic component 30, the surface of the electronic component 30 may be coated with gold (the so-called Coating Gold On Chip Back). Specifically, a gold layer is formed on the non-acting surface 30b of the electronic component 30 and the surface of the heat sink 32, and a flux is further added to facilitate the thermal interface layer 320 to adhere to the gold layer.

另外,於其它實施例中,該承載基板2’可省略該導電柱23之製作,如第2G’圖所示。或者,如第2G”圖所示之承載基板2”,該線路構件21於相對兩側上均結合並電性連接複數導電體22,22’,且其中一側之 導電體22係電性連接該第二線路結構26,而另一側之導電體22’係電性連接該第一線路結構20之第一線路重佈層201’。 In addition, in other embodiments, the carrier substrate 2'can omit the production of the conductive pillar 23, as shown in Figure 2G'. Or, as shown in the carrier substrate 2" shown in Figure 2G", the circuit member 21 is combined on opposite sides and electrically connected to a plurality of conductors 22, 22', and one of the two The conductor 22 is electrically connected to the second circuit structure 26, and the conductor 22' on the other side is electrically connected to the first circuit redistribution layer 201' of the first circuit structure 20.

第3A至3B圖係為本發明之承載基板3a之製法之第二實施例的剖面示意圖。本實施例與第一實施例之差異在於省略第二線路結構之製程,其它製程大致相同,故以下不再贅述相同處。 3A to 3B are schematic cross-sectional views of the second embodiment of the manufacturing method of the carrier substrate 3a of the present invention. The difference between this embodiment and the first embodiment is that the manufacturing process of the second circuit structure is omitted, and the other manufacturing processes are substantially the same, so the same points will not be repeated below.

如第3A圖所示,係採用第2G”圖所示之線路構件21進行第2A至2C圖所示之製程,包括:提供複數線路構件21,各該線路構件21於相對兩側上均結合並電性連接複數導電體22,22’,將複數線路構件21及複數導電柱23電性連接至位於承載板9上之第一線路結構20,接著形成包覆層25並進行整平製程。 As shown in Figure 3A, the circuit member 21 shown in Figure 2G" is used to perform the manufacturing process shown in Figures 2A to 2C, including: providing a plurality of circuit members 21, each of which is combined on opposite sides The plurality of conductors 22, 22' are electrically connected, the plurality of circuit members 21 and the plurality of conductive pillars 23 are electrically connected to the first circuit structure 20 on the carrier board 9, and then the coating layer 25 is formed and the leveling process is performed.

如第3B圖所示,移除該承載板9及其上之離型層90與黏著層91,以外露該第一線路結構20之第二側20b,進而形成本發明之承載基板3a。 As shown in FIG. 3B, the carrier board 9 and the release layer 90 and adhesive layer 91 thereon are removed to expose the second side 20b of the first circuit structure 20, thereby forming the carrier substrate 3a of the present invention.

因此,本發明之承載基板3a之製法中,主要藉由現有封裝製程將該線路構件21嵌埋於該包覆層25中,以增加佈線區,故相較於習知技術,對於大尺寸板面的封裝基板之需求,本發明之承載基板3a之製法不僅具有量產性,且單一承載基板3a之製作成本極低,因而極具市場競爭力。 Therefore, in the manufacturing method of the carrier substrate 3a of the present invention, the circuit member 21 is embedded in the cladding layer 25 mainly by the existing packaging process to increase the wiring area. Therefore, compared with the conventional technology, it is suitable for large-size boards. The manufacturing method of the carrier substrate 3a of the present invention is not only mass-productive, but also the manufacturing cost of a single carrier substrate 3a is extremely low, so it is extremely competitive in the market.

再者,該第一線路結構20係用於調配該線路構件21之佈線層數,使該線路構件21之佈線層數降低,以提高該線路構件21之製作良率。 Furthermore, the first circuit structure 20 is used to adjust the number of wiring layers of the circuit member 21 to reduce the number of wiring layers of the circuit member 21 so as to improve the manufacturing yield of the circuit member 21.

如第3C圖所示,該承載基板3a可於該第一線路結構20之第二側20b之第一線路重佈層201上接置一個或複數電子元件30,另該承載基板3a可於該線路構件21上藉由該些導電體22結合複數如銲球之導電元 件27,以令該承載基板3a於後續製程中藉由該些導電元件27接置於一如第2G圖所示之電子裝置4上。 As shown in Figure 3C, the carrier substrate 3a can be connected to the first circuit redistribution layer 201 of the second side 20b of the first circuit structure 20 with one or more electronic components 30, and the carrier substrate 3a can be mounted on the On the circuit member 21, a plurality of conductive elements such as solder balls are combined by the conductors 22 A member 27, so that the carrier substrate 3a is connected to the electronic device 4 as shown in FIG. 2G by the conductive elements 27 in the subsequent manufacturing process.

如第3D圖所示,沿如第3C圖所示之切割路徑S進行切單製程,以獲取電子封裝件3’。 As shown in Fig. 3D, the singulation process is performed along the cutting path S shown in Fig. 3C to obtain the electronic package 3'.

本發明亦提供一種電子封裝件3,3’,係包括一承載基板2,2’,2”,3a以及至少一設於該承載基板2,2’,2”,3a其中一側上之電子元件30,其中,該承載基板2,2’,2”,3a包括:一第一線路結構20、一線路構件21以及一包覆層25。 The present invention also provides an electronic package 3, 3', which includes a carrier substrate 2, 2', 2", 3a and at least one electronic device arranged on one side of the carrier substrate 2, 2', 2", 3a The component 30, wherein the carrier substrate 2, 2', 2", 3a includes: a first circuit structure 20, a circuit member 21 and a coating layer 25.

所述之第一線路結構20係具有相對之第一側20a與第二側20b,該第一側20a上可依需求形成有複數導電柱23,且該導電柱23電性連接該第一線路結構20。 The first circuit structure 20 has a first side 20a and a second side 20b opposite to each other. A plurality of conductive pillars 23 can be formed on the first side 20a as required, and the conductive pillars 23 are electrically connected to the first circuit Structure 20.

所述之線路構件21係設於該第一線路結構20之第一側20a上,且該線路構件21上係結合並電性連接複數導電體22,22’。 The circuit member 21 is arranged on the first side 20a of the first circuit structure 20, and the circuit member 21 is combined and electrically connected to a plurality of conductive bodies 22, 22'.

所述之包覆層25係形成於該第一線路結構20之第一側20a上,以令該包覆層25包覆該線路構件21、該導電體22,22’與該導電柱23,且令該導電柱23之端面23a與該導電體22之端面22a外露於該包覆層25。 The coating layer 25 is formed on the first side 20a of the first circuit structure 20, so that the coating layer 25 covers the circuit member 21, the conductors 22, 22' and the conductive pillar 23, And the end surface 23a of the conductive pillar 23 and the end surface 22a of the conductor 22 are exposed to the coating layer 25.

於一實施例中,該線路構件21係藉由複數導電體22’電性連接該第一線路結構20。 In one embodiment, the circuit member 21 is electrically connected to the first circuit structure 20 through a plurality of conductors 22'.

於一實施例中,所述之電子封裝件3,3’復包括複數導電元件27,係形成於該承載基板2,2’,2”,3a之另一側上。 In an embodiment, the electronic package 3, 3'includes a plurality of conductive elements 27 formed on the other side of the carrier substrate 2, 2', 2", 3a.

於一實施例中,所述之承載基板2,2’,2”復包括第二線路結構26,係形成於該包覆層25上,且該第二線路結構26電性連接該導電柱23,並藉由該導電體22電性連接該線路構件21。又包括形成於該第二線路結構26上之複數導電凸塊29。 In one embodiment, the carrier substrate 2, 2', 2" includes a second circuit structure 26 formed on the coating layer 25, and the second circuit structure 26 is electrically connected to the conductive pillar 23 , And electrically connected to the circuit member 21 by the conductor 22. It also includes a plurality of conductive bumps 29 formed on the second circuit structure 26.

於一實施例中,該電子元件30係為主動元件、被動元件或其二者組合。 In one embodiment, the electronic component 30 is an active component, a passive component or a combination of both.

於一實施例中,所述之電子封裝件3復包括一配置於該第二線路結構26上之散熱件3a。例如,該散熱件3a係接觸該電子元件30。 In one embodiment, the electronic package 3 further includes a heat sink 3 a disposed on the second circuit structure 26. For example, the heat sink 3a is in contact with the electronic component 30.

綜上所述,本發明之電子封裝件及其承載基板與製法中,係藉由現有封裝製程將線路構件設置於第一線路結構上並嵌埋於包覆層中,以增加佈線區,故對於大尺寸板面的封裝基板之需求,本發明之承載基板不僅具有量產性,且單一承載基板之製作成本極低,因而極具市場競爭力。 To sum up, in the electronic package and its carrier substrate and manufacturing method of the present invention, the circuit component is arranged on the first circuit structure and embedded in the cladding layer by the existing packaging process to increase the wiring area. In response to the demand for packaging substrates with large dimensions, the carrier substrate of the present invention not only has mass productivity, but also has extremely low manufacturing costs for a single carrier substrate, which makes it extremely competitive in the market.

再者,該線路結構係可用於調配該線路構件之佈線層數,使該線路構件之佈線層數降低,進而提升該線路構件之製作良率。 Furthermore, the circuit structure can be used to adjust the number of wiring layers of the circuit component, so that the number of wiring layers of the circuit component is reduced, thereby improving the production yield of the circuit component.

上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above-mentioned embodiments are used to exemplify the principles and effects of the present invention, but not to limit the present invention. Anyone who is familiar with the art can modify the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be listed in the scope of patent application described later.

2‧‧‧承載基板 2‧‧‧Carrier substrate

20‧‧‧第一線路結構 20‧‧‧The first line structure

20a‧‧‧第一側 20a‧‧‧First side

20b‧‧‧第二側 20b‧‧‧Second side

21‧‧‧線路構件 21‧‧‧Line components

22‧‧‧導電體 22‧‧‧Conductor

23‧‧‧導電柱 23‧‧‧Conductive post

25‧‧‧包覆層 25‧‧‧Coating

26‧‧‧第二線路結構 26‧‧‧Second line structure

Claims (30)

一種承載基板,係包括:一第一線路結構,係具有相對之第一側與第二側;至少一線路構件,係設於該第一線路結構之第一側上;以及一包覆層,係形成於該第一線路結構之第一側上以包覆該線路構件。 A carrier substrate includes: a first circuit structure having opposite first and second sides; at least one circuit member arranged on the first side of the first circuit structure; and a coating layer, Is formed on the first side of the first circuit structure to cover the circuit member. 如申請專利範圍第1項所述之承載基板,復包括一第二線路結構,係形成於該包覆層上且電性連接該線路構件。 The carrier substrate described in item 1 of the scope of the patent application further includes a second circuit structure formed on the coating layer and electrically connected to the circuit member. 如申請專利範圍第2項所述之承載基板,其中,該線路構件係藉由複數導電體電性連接該第二線路結構。 According to the carrier substrate described in item 2 of the scope of the patent application, the circuit member is electrically connected to the second circuit structure through a plurality of conductors. 如申請專利範圍第2項所述之承載基板,復包括形成於該包覆層中之導電柱,係用以電性連接該第一線路結構與第二線路結構。 The carrier substrate described in item 2 of the scope of the patent application includes conductive pillars formed in the coating layer to electrically connect the first circuit structure and the second circuit structure. 如申請專利範圍第2項所述之承載基板,復包括形成於該第二線路結構上之複數導電凸塊。 The carrier substrate described in item 2 of the scope of the patent application includes a plurality of conductive bumps formed on the second circuit structure. 如申請專利範圍第1項所述之承載基板,其中,該包覆層係包覆至少四個該線路構件。 According to the carrier substrate described in claim 1, wherein the coating layer covers at least four of the circuit members. 如申請專利範圍第1項所述之承載基板,其中,該線路構件係為封裝基板。 According to the carrier substrate described in item 1 of the scope of patent application, the circuit member is a package substrate. 如申請專利範圍第1項所述之承載基板,其中,該線路構件係為無核心層之線路結構。 According to the carrier substrate described in item 1 of the scope of patent application, the circuit member is a circuit structure without a core layer. 如申請專利範圍第1項所述之承載基板,其中,該線路構件係具有矽穿孔結構。 According to the carrier substrate described in item 1 of the scope of patent application, the circuit member has a silicon through hole structure. 如申請專利範圍第1項所述之承載基板,其中,該線路構件係藉由複數導電體電性連接該第一線路結構。 According to the carrier substrate described in claim 1, wherein the circuit member is electrically connected to the first circuit structure through a plurality of conductors. 一種電子封裝件,係包括: 一如申請專利範圍第1至10項之其中一者所述之承載基板;以及至少一電子元件,係設於該承載基板之第一側與第二側之其中一者上。 An electronic package including: A carrier substrate as described in one of items 1 to 10 in the scope of the patent application; and at least one electronic component is disposed on one of the first side and the second side of the carrier substrate. 如申請專利範圍第11項所述之電子封裝件,其中,該電子元件係為主動元件、被動元件或其二者組合。 The electronic package described in item 11 of the scope of patent application, wherein the electronic component is an active component, a passive component or a combination of both. 如申請專利範圍第11項所述之電子封裝件,復包括複數導電元件,係設於該承載基板之第一側與第二側中未設有該電子元件之者上。 For example, the electronic package described in item 11 of the scope of patent application includes a plurality of conductive elements, which are arranged on the first side and the second side of the carrier substrate on which the electronic element is not provided. 如申請專利範圍第11項所述之電子封裝件,復包括配置於該承載基板上之散熱件。 The electronic package described in item 11 of the scope of the patent application includes a heat sink arranged on the carrier substrate. 如申請專利範圍第14項所述之電子封裝件,其中,該散熱件係接觸該電子元件。 The electronic package described in item 14 of the scope of patent application, wherein the heat sink is in contact with the electronic component. 一種承載基板之製法,係包括:提供一具有相對之第一側與第二側的第一線路結構;設置至少一線路構件於該第一線路結構之第一側上;以及形成包覆層於該第一線路結構之第一側上,以令該包覆層包覆該線路構件。 A method for manufacturing a carrier substrate includes: providing a first circuit structure having opposite first and second sides; arranging at least one circuit member on the first side of the first circuit structure; and forming a coating layer on the On the first side of the first circuit structure, the coating layer covers the circuit member. 如申請專利範圍第16項所述之承載基板之製法,復包括形成第二線路結構於該包覆層上,且令該第二線路結構電性連接該線路構件。 The manufacturing method of the carrier substrate as described in item 16 of the scope of patent application includes forming a second circuit structure on the coating layer, and electrically connecting the second circuit structure to the circuit member. 如申請專利範圍第17項所述之承載基板之製法,其中,該線路構件藉由複數導電體電性連接該第二線路結構。 According to the manufacturing method of the carrier substrate described in claim 17, wherein the circuit member is electrically connected to the second circuit structure through a plurality of conductors. 如申請專利範圍第17項所述之承載基板之製法,復包括形成導電柱於該第一線路結構之第一側上,並令該包覆層包覆該導電柱,以透過該導電柱電性連接該第一線路結構與第二線路結構。 For example, the manufacturing method of the carrier substrate described in the scope of the patent application includes forming a conductive pillar on the first side of the first circuit structure, and making the coating layer cover the conductive pillar to pass electricity through the conductive pillar. The first circuit structure and the second circuit structure are sexually connected. 如申請專利範圍第17項所述之承載基板之製法,復包括形成複數導電凸塊於該第二線路結構上。 The manufacturing method of the carrier substrate as described in item 17 of the scope of patent application includes forming a plurality of conductive bumps on the second circuit structure. 如申請專利範圍第16項所述之承載基板之製法,其中,該包覆層係包覆至少四個該線路構件。 According to the manufacturing method of the carrier substrate described in item 16 of the scope of patent application, the coating layer covers at least four of the circuit members. 如申請專利範圍第16項所述之承載基板之製法,其中,該線路構件係為封裝基板。 According to the manufacturing method of the carrier substrate described in item 16 of the scope of patent application, the circuit member is a package substrate. 如申請專利範圍第16項所述之承載基板之製法,其中,該線路構件係為無核心層之線路結構。 The manufacturing method of the carrier substrate as described in item 16 of the scope of patent application, wherein the circuit member is a circuit structure without a core layer. 如申請專利範圍第16項所述之承載基板之製法,其中,該線路構件係具有矽穿孔結構。 According to the manufacturing method of the carrier substrate described in item 16 of the scope of patent application, the circuit member has a silicon through hole structure. 如申請專利範圍第16項所述之承載基板之製法,其中,該線路構件藉由複數導電體電性連接該第一線路結構。 According to the manufacturing method of the carrier substrate described in claim 16, wherein the circuit member is electrically connected to the first circuit structure through a plurality of conductors. 一種電子封裝件之製法,係包括:提供一如申請專利範圍第1至10項之其中一者所述之承載基板;以及設置至少一電子元件於該承載基板之第一側與第二側之其中一者上。 A method for manufacturing an electronic package includes: providing a carrier substrate as described in one of items 1 to 10 of the scope of the patent application; and disposing at least one electronic component on the first side and the second side of the carrier substrate One of them. 如申請專利範圍第26項所述之電子封裝件之製法,其中,該電子元件係為主動元件、被動元件或其二者組合。 The method for manufacturing an electronic package as described in item 26 of the scope of patent application, wherein the electronic component is an active component, a passive component or a combination of both. 如申請專利範圍第26項所述之電子封裝件之製法,復包括形成複數導電元件於該承載基板之第一側與第二側中未設有該電子元件之者上。 The manufacturing method of the electronic package described in item 26 of the scope of the patent application includes forming a plurality of conductive elements on the first side and the second side of the carrier substrate where the electronic element is not provided. 如申請專利範圍第26項所述之電子封裝件之製法,復包括配置散熱件於該承載基板上。 The manufacturing method of the electronic package as described in item 26 of the scope of patent application includes disposing a heat sink on the carrier substrate. 如申請專利範圍第29項所述之電子封裝件之製法,其中,該散熱件係接觸該電子元件。 The method for manufacturing an electronic package described in item 29 of the scope of patent application, wherein the heat sink is in contact with the electronic component.
TW108126794A 2019-05-03 2019-07-29 Carrying substrate, electronic package having the carrying substrate, and methods for manufacturing the same TWI802726B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201910728198.8A CN111883506B (en) 2019-05-03 2019-08-08 Electronic package, bearing substrate thereof and manufacturing method
US16/554,779 US11923337B2 (en) 2019-05-03 2019-08-29 Carrying substrate, electronic package having the carrying substrate, and methods for manufacturing the same
US18/464,855 US12125828B2 (en) 2019-05-03 2023-09-11 Carrying substrate, electronic package having the carrying substrate, and methods for manufacturing the same
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI788230B (en) * 2022-02-23 2022-12-21 矽品精密工業股份有限公司 Electronic package and manufacturing method thereof
TWI853442B (en) * 2022-06-06 2024-08-21 台灣積體電路製造股份有限公司 Semiconductor package and method of manufacturing semiconductor package
TWI855382B (en) * 2022-09-19 2024-09-11 大陸商芯愛科技(南京)有限公司 Packaging substrate and fabrication method thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI778654B (en) * 2021-06-09 2022-09-21 矽品精密工業股份有限公司 Electronic package and manufacturing method thereof
CN115472574A (en) * 2021-06-10 2022-12-13 矽品精密工业股份有限公司 Electronic package and manufacturing method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7339278B2 (en) * 2005-09-29 2008-03-04 United Test And Assembly Center Ltd. Cavity chip package
KR20100037300A (en) * 2008-10-01 2010-04-09 삼성전자주식회사 Method of forming semiconductor device having embedded interposer
TWI495051B (en) * 2011-07-08 2015-08-01 Unimicron Technology Corp Coreless package substrate and fabrication method thereof
JP2017123459A (en) * 2016-01-08 2017-07-13 サムソン エレクトロ−メカニックス カンパニーリミテッド. Printed circuit board
EP3437129A4 (en) * 2016-03-30 2019-09-25 INTEL Corporation Hybrid microelectronic substrates
US10833052B2 (en) * 2016-10-06 2020-11-10 Micron Technology, Inc. Microelectronic package utilizing embedded bridge through-silicon-via interconnect component and related methods
US10727198B2 (en) * 2017-06-30 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor package and method manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI788230B (en) * 2022-02-23 2022-12-21 矽品精密工業股份有限公司 Electronic package and manufacturing method thereof
TWI853442B (en) * 2022-06-06 2024-08-21 台灣積體電路製造股份有限公司 Semiconductor package and method of manufacturing semiconductor package
TWI855382B (en) * 2022-09-19 2024-09-11 大陸商芯愛科技(南京)有限公司 Packaging substrate and fabrication method thereof

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