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TW372982B - New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive material - Google Patents

New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive material

Info

Publication number
TW372982B
TW372982B TW086112934A TW86112934A TW372982B TW 372982 B TW372982 B TW 372982B TW 086112934 A TW086112934 A TW 086112934A TW 86112934 A TW86112934 A TW 86112934A TW 372982 B TW372982 B TW 372982B
Authority
TW
Taiwan
Prior art keywords
labile group
acid
copolymers
application
group protected
Prior art date
Application number
TW086112934A
Other languages
English (en)
Inventor
Munirathna Padmanaban
Georg Pawlowski
Yoshiaki Kinoshita
Hiroshi Okazaki
Seiya Masuda
Satoshi Yamamoto
Original Assignee
Az Electronic Materials Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Japan filed Critical Az Electronic Materials Japan
Application granted granted Critical
Publication of TW372982B publication Critical patent/TW372982B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/22—Oxygen
    • C08F12/24—Phenols or alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/30—Introducing nitrogen atoms or nitrogen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/34—Introducing sulfur atoms or sulfur-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Emergency Medicine (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW086112934A 1996-09-10 1997-09-08 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive material TW372982B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23914196A JP3808140B2 (ja) 1996-09-10 1996-09-10 新規酸感応性基で保護されたヒドロキシスチレン重合体およびこれらを含む放射線感応性材料

Publications (1)

Publication Number Publication Date
TW372982B true TW372982B (en) 1999-11-01

Family

ID=17040382

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086112934A TW372982B (en) 1996-09-10 1997-09-08 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive material

Country Status (6)

Country Link
US (1) US5852128A (zh)
EP (1) EP0827970B1 (zh)
JP (1) JP3808140B2 (zh)
KR (1) KR100464473B1 (zh)
DE (1) DE69706930T2 (zh)
TW (1) TW372982B (zh)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3802179B2 (ja) * 1997-02-07 2006-07-26 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
EP0887707B1 (en) * 1997-06-24 2003-09-03 Fuji Photo Film Co., Ltd. Positive photoresist composition
US6040119A (en) * 1998-03-27 2000-03-21 Industrial Technology Research Institute Elimination of proximity effect in photoresist
US6159653A (en) * 1998-04-14 2000-12-12 Arch Specialty Chemicals, Inc. Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations
JP3761322B2 (ja) * 1998-04-23 2006-03-29 東京応化工業株式会社 化学増幅型ポジ型ホトレジスト
US6815144B2 (en) * 1998-04-23 2004-11-09 Tokyo Ohka Kogyo Co., Ltd. Positive-working chemical-amplification photoresist composition
KR100287175B1 (ko) * 1998-05-20 2001-09-22 윤종용 화학 증폭형 포토레지스트의 용해 억제제 및 이를 포함하는 화학증폭형 포토레지스트 조성물
US7704668B1 (en) * 1998-08-04 2010-04-27 Rohm And Haas Electronic Materials Llc Photoresist compositions and methods and articles of manufacture comprising same
JP3638086B2 (ja) * 1998-08-21 2005-04-13 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
US6770413B1 (en) * 1999-01-12 2004-08-03 Shipley Company, L.L.C. Hydroxyphenyl copolymers and photoresists comprising same
TWI277830B (en) * 1999-01-28 2007-04-01 Sumitomo Chemical Co Resist composition
JP4019403B2 (ja) * 1999-03-08 2007-12-12 Ｊｓｒ株式会社 レジストパターンの形成方法
JP4602496B2 (ja) * 1999-05-24 2010-12-22 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ポリビニルフェノール類のアセタール化物及び／又はカーボネート化物の製造方法及び感放射線性樹脂組成物
KR100320773B1 (ko) * 1999-05-31 2002-01-17 윤종용 포토레지스트 조성물
US6365322B1 (en) * 1999-12-07 2002-04-02 Clariant Finance (Bvi) Limited Photoresist composition for deep UV radiation
KR100550936B1 (ko) * 1999-12-08 2006-02-13 제일모직주식회사 히드록시스티렌계 포토레지스트 조성물의 제조방법 및그에 의해 수득된 포토레지스트 조성물
JP4562240B2 (ja) * 2000-05-10 2010-10-13 富士フイルム株式会社 ポジ型感放射線性組成物及びそれを用いたパターン形成方法
JP3771815B2 (ja) * 2001-05-31 2006-04-26 東京応化工業株式会社 感光性積層体、それに用いるポジ型レジスト組成物及びそれらを用いるレジストパターン形成方法
JP4080784B2 (ja) * 2002-04-26 2008-04-23 東京応化工業株式会社 レジスト用現像液及びそれを用いたレジストパターン形成方法、並びにレジスト用現像原液
US7067227B2 (en) * 2002-05-23 2006-06-27 Applied Materials, Inc. Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing
DE10243742B4 (de) * 2002-09-20 2007-11-08 Qimonda Ag Verfahren zur Strukturierung von Halbleitersubstraten unter Verwendung eines Fotoresists
KR100506096B1 (ko) 2003-10-27 2005-08-03 삼성에스디아이 주식회사 말단 술폰산기를 포함하는 고분자 및 이를 채용한 고분자전해질과 연료 전지
JP5723829B2 (ja) * 2011-11-10 2015-05-27 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、マスクブランクス及びパターン形成方法
JP6910108B2 (ja) * 2015-03-31 2021-07-28 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3846511A (en) * 1972-09-19 1974-11-05 Phillips Petroleum Co Resinous adhesives and production thereof
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4603101A (en) * 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
DE3817012A1 (de) * 1988-05-19 1989-11-30 Basf Ag Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern
DE68926019T2 (de) * 1988-10-28 1996-10-02 Ibm Positiv arbeitende hochempfindliche Photolack-Zusammensetzung
DE4025959A1 (de) * 1990-08-16 1992-02-20 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
JP3030672B2 (ja) * 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
DE69511141T2 (de) * 1994-03-28 2000-04-20 Matsushita Electric Industrial Co., Ltd. Resistzusammensetzung für tiefe Ultraviolettbelichtung
US5736296A (en) * 1994-04-25 1998-04-07 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition comprising a mixture of two polyhydroxystyrenes having different acid cleavable groups and an acid generating compound
DE69513929T2 (de) * 1994-10-13 2000-07-20 Arch Speciality Chemicals, Inc. Polymere
DE69516101T2 (de) * 1994-12-20 2001-01-11 Arch Speciality Chemicals, Inc. Vernetzte Polymere
EP0723201A1 (en) * 1995-01-20 1996-07-24 Ocg Microelectronic Materials, Inc. Phenolic-resins with acid-labile protecting groups
KR0164981B1 (ko) * 1995-11-28 1999-03-20 김흥기 아세탈기를 함유하는 알콕시-스틸렌 중합체와 그의 제조방법 및 알콕시-스틸렌 중합체를 주요 구성성분으로 하는 화학증폭형 포토레지스트 재료

Also Published As

Publication number Publication date
JP3808140B2 (ja) 2006-08-09
KR19980024434A (ko) 1998-07-06
DE69706930T2 (de) 2002-04-04
EP0827970B1 (en) 2001-09-26
KR100464473B1 (ko) 2005-06-16
US5852128A (en) 1998-12-22
EP0827970A3 (en) 1998-12-30
DE69706930D1 (de) 2001-10-31
EP0827970A2 (en) 1998-03-11
JPH1087724A (ja) 1998-04-07

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