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TW363147B - Phase shifting mask - Google Patents

Phase shifting mask

Info

Publication number
TW363147B
TW363147B TW086117510A TW86117510A TW363147B TW 363147 B TW363147 B TW 363147B TW 086117510 A TW086117510 A TW 086117510A TW 86117510 A TW86117510 A TW 86117510A TW 363147 B TW363147 B TW 363147B
Authority
TW
Taiwan
Prior art keywords
phase shifting
layer
homology
shifting mask
mask
Prior art date
Application number
TW086117510A
Other languages
English (en)
Inventor
Szu-Min Lin
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW086117510A priority Critical patent/TW363147B/zh
Priority to US09/056,453 priority patent/US6010807A/en
Application granted granted Critical
Publication of TW363147B publication Critical patent/TW363147B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW086117510A 1997-11-22 1997-11-22 Phase shifting mask TW363147B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW086117510A TW363147B (en) 1997-11-22 1997-11-22 Phase shifting mask
US09/056,453 US6010807A (en) 1997-11-22 1998-04-07 Phase-shifting mask for photolithography in semiconductor fabrications

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086117510A TW363147B (en) 1997-11-22 1997-11-22 Phase shifting mask

Publications (1)

Publication Number Publication Date
TW363147B true TW363147B (en) 1999-07-01

Family

ID=21627274

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086117510A TW363147B (en) 1997-11-22 1997-11-22 Phase shifting mask

Country Status (2)

Country Link
US (1) US6010807A (zh)
TW (1) TW363147B (zh)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6228539B1 (en) 1996-09-18 2001-05-08 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
JP2000181048A (ja) * 1998-12-16 2000-06-30 Sharp Corp フォトマスクおよびその製造方法、並びにそれを用いた露光方法
US6376130B1 (en) 2000-02-22 2002-04-23 Micron Technology, Inc. Chromeless alternating reticle for producing semiconductor device features
US6524751B1 (en) * 2000-03-06 2003-02-25 Micron Technology, Inc. Reticle design for alternating phase shift mask
US6395435B1 (en) 2000-06-27 2002-05-28 The United States Of America As Represented By The Secretary Of The Navy Photo-lithographic mask having total internal reflective surfaces
US7083879B2 (en) * 2001-06-08 2006-08-01 Synopsys, Inc. Phase conflict resolution for photolithographic masks
US6681379B2 (en) 2000-07-05 2004-01-20 Numerical Technologies, Inc. Phase shifting design and layout for static random access memory
US6524752B1 (en) 2000-07-05 2003-02-25 Numerical Technologies, Inc. Phase shift masking for intersecting lines
US6787271B2 (en) * 2000-07-05 2004-09-07 Numerical Technologies, Inc. Design and layout of phase shifting photolithographic masks
US6541165B1 (en) 2000-07-05 2003-04-01 Numerical Technologies, Inc. Phase shift mask sub-resolution assist features
US6777141B2 (en) 2000-07-05 2004-08-17 Numerical Technologies, Inc. Phase shift mask including sub-resolution assist features for isolated spaces
US6503666B1 (en) 2000-07-05 2003-01-07 Numerical Technologies, Inc. Phase shift masking for complex patterns
US6539521B1 (en) 2000-09-29 2003-03-25 Numerical Technologies, Inc. Dissection of corners in a fabrication layout for correcting proximity effects
US6584610B1 (en) 2000-10-25 2003-06-24 Numerical Technologies, Inc. Incrementally resolved phase-shift conflicts in layouts for phase-shifted features
US6622288B1 (en) 2000-10-25 2003-09-16 Numerical Technologies, Inc. Conflict sensitive compaction for resolving phase-shift conflicts in layouts for phase-shifted features
US6653026B2 (en) 2000-12-20 2003-11-25 Numerical Technologies, Inc. Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
US6551750B2 (en) 2001-03-16 2003-04-22 Numerical Technologies, Inc. Self-aligned fabrication technique for tri-tone attenuated phase-shifting masks
US6635393B2 (en) 2001-03-23 2003-10-21 Numerical Technologies, Inc. Blank for alternating PSM photomask with charge dissipation layer
US6566019B2 (en) 2001-04-03 2003-05-20 Numerical Technologies, Inc. Using double exposure effects during phase shifting to control line end shortening
US6553560B2 (en) 2001-04-03 2003-04-22 Numerical Technologies, Inc. Alleviating line end shortening in transistor endcaps by extending phase shifters
US6569583B2 (en) 2001-05-04 2003-05-27 Numerical Technologies, Inc. Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts
US6593038B2 (en) 2001-05-04 2003-07-15 Numerical Technologies, Inc. Method and apparatus for reducing color conflicts during trim generation for phase shifters
US6852471B2 (en) 2001-06-08 2005-02-08 Numerical Technologies, Inc. Exposure control for phase shifting photolithographic masks
US6523165B2 (en) 2001-07-13 2003-02-18 Numerical Technologies, Inc. Alternating phase shift mask design conflict resolution
US6664009B2 (en) 2001-07-27 2003-12-16 Numerical Technologies, Inc. Method and apparatus for allowing phase conflicts in phase shifting mask and chromeless phase edges
US6684382B2 (en) 2001-08-31 2004-01-27 Numerical Technologies, Inc. Microloading effect correction
US6738958B2 (en) 2001-09-10 2004-05-18 Numerical Technologies, Inc. Modifying a hierarchical representation of a circuit to process composite gates
US6735752B2 (en) 2001-09-10 2004-05-11 Numerical Technologies, Inc. Modifying a hierarchical representation of a circuit to process features created by interactions between cells
US6698007B2 (en) 2001-10-09 2004-02-24 Numerical Technologies, Inc. Method and apparatus for resolving coloring conflicts between phase shifters
US7498104B2 (en) * 2004-08-28 2009-03-03 United Microelectronics Corp. Phase shift photomask
JP5319193B2 (ja) * 2008-07-28 2013-10-16 Ｈｏｙａ株式会社 液晶表示装置製造用多階調フォトマスク、液晶表示装置製造用多階調フォトマスクの製造方法及びパターン転写方法
JP2010276724A (ja) * 2009-05-26 2010-12-09 Hoya Corp 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0135729B1 (en) * 1993-02-12 1998-04-24 Mitsubishi Electric Corp Attenuating type phase shifting mask and method of manufacturing thereof

Also Published As

Publication number Publication date
US6010807A (en) 2000-01-04

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