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Priority to TW84113918ApriorityCriticalpatent/TW278217B/en
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Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Drying Of Semiconductors
(AREA)
Abstract
A semiconductor metallization layer forming pattern method, which includes: Form cover-screen and cover conductor metallization layers on the surface of the semiconductor; Form a 1st mask layer on the surface upper layer; Form a 2nd mask layer on the surface of 1st mask layer; Serial etching the uncovered 1st mask layer and upper metallization layer to form pattern of the 1st mask and upper metallization layers; Take off the 2nd mask layer ; Etching the uncovered lower metallization layer to form pattern of the lower layer.