TW330304B - Patterned porous silicon forming method - Google Patents
Patterned porous silicon forming methodInfo
- Publication number
- TW330304B TW330304B TW086106690A TW86106690A TW330304B TW 330304 B TW330304 B TW 330304B TW 086106690 A TW086106690 A TW 086106690A TW 86106690 A TW86106690 A TW 86106690A TW 330304 B TW330304 B TW 330304B
- Authority
- TW
- Taiwan
- Prior art keywords
- porous silicon
- forming method
- patterned porous
- silicon forming
- layer
- Prior art date
Links
- 229910021426 porous silicon Inorganic materials 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
Landscapes
- Recrystallisation Techniques (AREA)
- Formation Of Insulating Films (AREA)
- Element Separation (AREA)
Abstract
A patterned porous silicon forming method includes the following steps: a) provide a silicon substrate; b) grow a GaAs layer on the silicon substrate; c) proceed with a photolithography etching on the GaAs layer to define a pattern and obtain a masking layer; and d) form a porous silicon layer by anodic oxidation etching the silicon substrate surface that is not covered by the masking layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW086106690A TW330304B (en) | 1997-05-19 | 1997-05-19 | Patterned porous silicon forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW086106690A TW330304B (en) | 1997-05-19 | 1997-05-19 | Patterned porous silicon forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW330304B true TW330304B (en) | 1998-04-21 |
Family
ID=58262593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086106690A TW330304B (en) | 1997-05-19 | 1997-05-19 | Patterned porous silicon forming method |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW330304B (en) |
-
1997
- 1997-05-19 TW TW086106690A patent/TW330304B/en not_active IP Right Cessation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |