JPS5513964A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor deviceInfo
- Publication number
- JPS5513964A JPS5513964A JP8738178A JP8738178A JPS5513964A JP S5513964 A JPS5513964 A JP S5513964A JP 8738178 A JP8738178 A JP 8738178A JP 8738178 A JP8738178 A JP 8738178A JP S5513964 A JPS5513964 A JP S5513964A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- sio
- etching
- under
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000007792 gaseous phase Substances 0.000 abstract 1
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To make it easy to form very fine patterns, by burying under-cuts produced by shallowly etching a polycrystalline layer and further etching it, when a polycrytalline Si layer which has been formed on a semiconductor base Via an insulating film is selectively etched.
CONSTITUTION: Si base 101 is coated with SiO2 film 102, and Si layer 103 is grown in gaseous phase. This is covered with SiO2 film, and thereby, a resist film of a fixed shape is provided. Next, with this set as mask, etching is done and all of film 104 and half the thickness of layer 103 are removed. On both ends below the remaining film 104, under-cut regions 105 and 106 are produced. After this, the mask is removed, and positive type resists 107 and 108 are provided in regions 105 and 106. By this, the further advance of the under-cuts are prevented, and at the same time, layer 103 is etched. Next, film 104 is removed, and SiO2 film 109 is grown over the entire surface. On top of this, Al wire 110 is fitted.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8738178A JPS5513964A (en) | 1978-07-17 | 1978-07-17 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8738178A JPS5513964A (en) | 1978-07-17 | 1978-07-17 | Method of manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5513964A true JPS5513964A (en) | 1980-01-31 |
Family
ID=13913311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8738178A Pending JPS5513964A (en) | 1978-07-17 | 1978-07-17 | Method of manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5513964A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101001875B1 (en) * | 2006-09-30 | 2010-12-17 | 엘지이노텍 주식회사 | Fine pattern formation method using isotropic etching and a semiconductor substrate surface member having a fine pattern manufactured using the same |
| KR20120109059A (en) * | 2011-03-24 | 2012-10-08 | 삼성테크윈 주식회사 | Method of forming metal pattern |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50103282A (en) * | 1974-01-11 | 1975-08-15 | ||
| JPS51136289A (en) * | 1975-05-21 | 1976-11-25 | Toshiba Corp | Semi-conductor producing |
| JPS5263676A (en) * | 1975-11-20 | 1977-05-26 | Toshiba Corp | Production of semiconductor device |
-
1978
- 1978-07-17 JP JP8738178A patent/JPS5513964A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50103282A (en) * | 1974-01-11 | 1975-08-15 | ||
| JPS51136289A (en) * | 1975-05-21 | 1976-11-25 | Toshiba Corp | Semi-conductor producing |
| JPS5263676A (en) * | 1975-11-20 | 1977-05-26 | Toshiba Corp | Production of semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101001875B1 (en) * | 2006-09-30 | 2010-12-17 | 엘지이노텍 주식회사 | Fine pattern formation method using isotropic etching and a semiconductor substrate surface member having a fine pattern manufactured using the same |
| US8486838B2 (en) | 2006-09-30 | 2013-07-16 | Lg Innotek Co., Ltd. | Method for forming a fine pattern using isotropic etching |
| US9209108B2 (en) | 2006-09-30 | 2015-12-08 | Lg Innotek Co., Ltd. | Method for forming a fine pattern using isotropic etching |
| KR20120109059A (en) * | 2011-03-24 | 2012-10-08 | 삼성테크윈 주식회사 | Method of forming metal pattern |
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