JPS5541727A - Production of impatt diode - Google Patents

Abstract

PURPOSE: To provide an IMPATT diode by a simple and convenient method comprising forming metal layers on a semiconductor wafer, followed by only chemical etching to form the desired element, thus the troublesome and difficult mask-locating operation being dispensed with.

CONSTITUTION: A wafer 4 is prepared by arranging an n-type semiconductor layer 2 and a p⁺-type semiconductor layer 3 on an n⁺-type semiconductor substrate 1. On the layer 3 are placed metal layers 5 and 6 successively. The substrate 1 is etched to form a new substrate 7. At the predetermined place on the substrate 7 are successively placed metal layers 13 and 14 of the same materials as the metal layers 5 and 6, respectively. Further, metal layers 41 and 42 of predetermined sizes and of the same materials as the metal layers 5 and 6, respectively, are laid thereover. Thereupon, the substrate 7 and the layers 2, 3 and 5 are subjected to chemical etching using the layer 42 as mask, to form a substrate 15 and layers 16, 17 and 19. The layer 42 is then removed off the layer 41 while a metal layer 20 consisting of a region below the layer 6 and the layer 41 is formed. The layer 41 is then removed off the element proper 18 and the layer 13, to finally produce the desired IMPATT diode 23 including an electrode 21 formed of the layers 14 and 13 and another electrode 22 formed of the layers 19 and 20.

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