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JPS5483783A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5483783A
JPS5483783A JP15189177A JP15189177A JPS5483783A JP S5483783 A JPS5483783 A JP S5483783A JP 15189177 A JP15189177 A JP 15189177A JP 15189177 A JP15189177 A JP 15189177A JP S5483783 A JPS5483783 A JP S5483783A
Authority
JP
Japan
Prior art keywords
film
approximate
concave part
flank
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15189177A
Other languages
Japanese (ja)
Other versions
JPS5940291B2 (en
Inventor
Tatsunori Nakajima
Kosei Kajiwara
Kazutoshi Nagano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP52151891A priority Critical patent/JPS5940291B2/en
Publication of JPS5483783A publication Critical patent/JPS5483783A/en
Publication of JPS5940291B2 publication Critical patent/JPS5940291B2/en
Expired legal-status Critical Current

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  • Element Separation (AREA)

Abstract

PURPOSE: To form flat surface by covering a Si substrate surface and concave part flank with a Si3N4 this film and by coverting all Si3N4 into SiO2 through oxidization.
CONSTITUTION: The Si substrate 11 is etched by CF4 gas via SiO212 of 1μm to form concave part 13 of approximate 4500Å. After film 2 is removed, Si3N4 14 of less than 300Å is formed and film 14 is removed by resist mask 15. Next, mask 15 is removed and a treatment is carried out at 1100°C for 150 minutes to produce separate oxidized film 16 of approximate 1μm in thickness. Since the flank of the concave part is covered with Si3N4 14', no over-head occurs. In addition, films 14 and 14' are converted gradually into oxdized film to a thickness of approximate 700Å during a treatment, so that a completely-flat Si substrate surface can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP52151891A 1977-12-16 1977-12-16 Manufacturing method of semiconductor device Expired JPS5940291B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52151891A JPS5940291B2 (en) 1977-12-16 1977-12-16 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52151891A JPS5940291B2 (en) 1977-12-16 1977-12-16 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5483783A true JPS5483783A (en) 1979-07-04
JPS5940291B2 JPS5940291B2 (en) 1984-09-29

Family

ID=15528452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52151891A Expired JPS5940291B2 (en) 1977-12-16 1977-12-16 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5940291B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1027894A (en) * 1995-12-30 1998-01-27 Hyundai Electron Ind Co Ltd SOI substrate and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120289A (en) * 1977-03-30 1978-10-20 Toshiba Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120289A (en) * 1977-03-30 1978-10-20 Toshiba Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1027894A (en) * 1995-12-30 1998-01-27 Hyundai Electron Ind Co Ltd SOI substrate and manufacturing method thereof
US5907783A (en) * 1995-12-30 1999-05-25 Hyundai Electronics Industries Co., Ltd. Method of fabricating silicon-on-insulator substrate

Also Published As

Publication number Publication date
JPS5940291B2 (en) 1984-09-29

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