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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW88110178ApriorityCriticalpatent/TW428227B/en
Application grantedgrantedCritical
Publication of TW428227BpublicationCriticalpatent/TW428227B/en
Exposure And Positioning Against Photoresist Photosensitive Materials
(AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure
(AREA)
Abstract
There is provided a multi-exposure process, which comprises: providing a chip having semiconductor devices formed thereon; forming a photoresist layer on the chip; providing a mask on the photoresist layer having a first pattern and a second pattern formed thereon; performing a first exposure process to form a first exposure pattern and a second exposure pattern on the photoresist layer corresponding to the first pattern and the second pattern; producing a relative shift between the chip and the mask until the second pattern of the mask is positioned on the first exposure pattern of the photoresist layer; performing a second exposure process to transfer the first exposure pattern of the photoresist layer into a third exposure pattern which is integrated with the first and the second exposure patterns, wherein the pattern density of the third exposure pattern is larger than those of the first and the second exposure patterns.
TW88110178A1999-06-171999-06-17Multi-exposure process
TW428227B
(en)
Resist pattern thickening material, process for forming resist pattern using the same, and process for manufacturing semiconductor device using the same