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TW355841B - Manufacturing method for semiconductor formed of titanium/tangsten silicon - Google Patents

Manufacturing method for semiconductor formed of titanium/tangsten silicon

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Publication number
TW355841B
TW355841B TW084113971A TW84113971A TW355841B TW 355841 B TW355841 B TW 355841B TW 084113971 A TW084113971 A TW 084113971A TW 84113971 A TW84113971 A TW 84113971A TW 355841 B TW355841 B TW 355841B
Authority
TW
Taiwan
Prior art keywords
gate
silicon
tangsten
manufacturing
titanium
Prior art date
Application number
TW084113971A
Other languages
Chinese (zh)
Inventor
qiu-shan You
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW084113971A priority Critical patent/TW355841B/en
Application granted granted Critical
Publication of TW355841B publication Critical patent/TW355841B/en

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Abstract

A manufacturing method for MOSFET with titanium silicon source/collector and with tangsten silicon gate, comprising: forming field oxide on substrate to isolate electronic elements; forming silicon dioxide as the gate oxide of said MOSFET; depositing a polysilicon and tungsten and used microlithography and etching technology to form patterned gate electrode; performing N-impurity implantation to form the N-impurity source/collector; deposit a dielectric layer to anisotropically etchback to form spacer in the gate; heat oxidation to form thermal silicon dioxide in the gate and the substrate.
TW084113971A 1995-12-27 1995-12-27 Manufacturing method for semiconductor formed of titanium/tangsten silicon TW355841B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW084113971A TW355841B (en) 1995-12-27 1995-12-27 Manufacturing method for semiconductor formed of titanium/tangsten silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW084113971A TW355841B (en) 1995-12-27 1995-12-27 Manufacturing method for semiconductor formed of titanium/tangsten silicon

Publications (1)

Publication Number Publication Date
TW355841B true TW355841B (en) 1999-04-11

Family

ID=57940306

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084113971A TW355841B (en) 1995-12-27 1995-12-27 Manufacturing method for semiconductor formed of titanium/tangsten silicon

Country Status (1)

Country Link
TW (1) TW355841B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202017100571U1 (en) 2017-02-02 2017-02-17 E-Lead Electronic Co., Ltd. Anti-ghost reflector or display system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202017100571U1 (en) 2017-02-02 2017-02-17 E-Lead Electronic Co., Ltd. Anti-ghost reflector or display system

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