TW283807B - A manufacture method for tungsten-polycide-polysilicon capacitor - Google Patents
A manufacture method for tungsten-polycide-polysilicon capacitorInfo
- Publication number
- TW283807B TW283807B TW85100529A TW85100529A TW283807B TW 283807 B TW283807 B TW 283807B TW 85100529 A TW85100529 A TW 85100529A TW 85100529 A TW85100529 A TW 85100529A TW 283807 B TW283807 B TW 283807B
- Authority
- TW
- Taiwan
- Prior art keywords
- tungsten
- polycide
- forming
- polysilicon
- polysicilicon
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 4
- 229920005591 polysilicon Polymers 0.000 title abstract 4
- 239000003990 capacitor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 238000000151 deposition Methods 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 abstract 1
- 229910021342 tungsten silicide Inorganic materials 0.000 abstract 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A manufacture method for Tungsten-Polycide-Polysilicon Capacitor comprising the following steps: forming an active area on silicon Semiconductor substrate; forming a gate oxide for metal oxide semiconductor field effect transistor; depositing a layer of tungsten silicide and first polysilicon; etching tungsten-polycide by the RIE and forming a gate electrode and a bottom electrode; depositing a layer of inter polysilicon oxide and densify with 5%-10% O2 about 800 deg.C to 900 deg.C; depositing a layer of second polysicilicon and etching the second polysicilicon in order to form a upper electrode; removing the second polysicilicon; annealing the tungsten-polycide in high temperature; and forming the N+ electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW85100529A TW283807B (en) | 1996-01-17 | 1996-01-17 | A manufacture method for tungsten-polycide-polysilicon capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW85100529A TW283807B (en) | 1996-01-17 | 1996-01-17 | A manufacture method for tungsten-polycide-polysilicon capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW283807B true TW283807B (en) | 1996-08-21 |
Family
ID=51397828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW85100529A TW283807B (en) | 1996-01-17 | 1996-01-17 | A manufacture method for tungsten-polycide-polysilicon capacitor |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW283807B (en) |
-
1996
- 1996-01-17 TW TW85100529A patent/TW283807B/en not_active IP Right Cessation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |