TW353218B - Process of performing nondestructive DRAM component doping - Google Patents
Process of performing nondestructive DRAM component dopingInfo
- Publication number
- TW353218B TW353218B TW086103095A TW86103095A TW353218B TW 353218 B TW353218 B TW 353218B TW 086103095 A TW086103095 A TW 086103095A TW 86103095 A TW86103095 A TW 86103095A TW 353218 B TW353218 B TW 353218B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- gate
- oxide layer
- substrate silicon
- silicon
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 5
- 239000010703 silicon Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- 238000005530 etching Methods 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- XLUBVTJUEUUZMR-UHFFFAOYSA-B silicon(4+);tetraphosphate Chemical compound [Si+4].[Si+4].[Si+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O XLUBVTJUEUUZMR-UHFFFAOYSA-B 0.000 abstract 2
- 229910019142 PO4 Inorganic materials 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 abstract 1
- 239000010452 phosphate Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 125000006850 spacer group Chemical group 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
Landscapes
- Semiconductor Memories (AREA)
Abstract
A method of producing a semiconductor DRAM, the method at least comprising the following steps: performing a field oxide layer isolation process thereby defining an active region; forming a gate oxide layer on a substrate silicon; forming a polysilicon layer on the gate oxide layer; etching a portion of the gate oxide layer and the polysilicon layer using a photoresist as a mask thereby defining a gate; forming a dielectric layer on the gate and the substrate silicon; anisotropically etching the dielectric layer thereby forming a spacer wall; forming a phosphate silicon glass on the gate and the substrate silicon; performing an annealing thermal treatment thereby forming a drain and a source, which comprises using a high temperature to diffuse phosphate doping ions in the phosphate silicon glass into the substrate silicon; and performing a thermal oxidation thereby forming an oxide layer on the substrate silicon and the gate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW086103095A TW353218B (en) | 1997-03-13 | 1997-03-13 | Process of performing nondestructive DRAM component doping |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW086103095A TW353218B (en) | 1997-03-13 | 1997-03-13 | Process of performing nondestructive DRAM component doping |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW353218B true TW353218B (en) | 1999-02-21 |
Family
ID=57940118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086103095A TW353218B (en) | 1997-03-13 | 1997-03-13 | Process of performing nondestructive DRAM component doping |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW353218B (en) |
-
1997
- 1997-03-13 TW TW086103095A patent/TW353218B/en not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3007437B2 (en) | Method for manufacturing CMOS device | |
| TW346652B (en) | Semiconductor production process | |
| WO2002063668A1 (en) | Method of forming insulating film and method of producing semiconductor device | |
| US5972761A (en) | Method of making MOS transistors with a gate-side air-gap structure and an extension ultra-shallow S/D junction | |
| US6294432B1 (en) | Super halo implant combined with offset spacer process | |
| US6022785A (en) | Method of fabricating a metal-oxide-semiconductor transistor | |
| US6159812A (en) | Reduced boron diffusion by use of a pre-anneal | |
| US5926715A (en) | Method of forming lightly-doped drain by automatic PSG doping | |
| CN101740389A (en) | MOS (Metal Oxide Semiconductor) transistor and forming method thereof | |
| JPH08204021A (en) | Semiconductor device and its production | |
| TW353218B (en) | Process of performing nondestructive DRAM component doping | |
| US5747378A (en) | Method of damage free doping for forming a dram memory cell | |
| JPH08186082A (en) | Manufacture of semiconductor device | |
| CN101740391B (en) | Fabricating method of NMOS (N-channel Metal Oxide Semiconductor) | |
| KR100289394B1 (en) | Method for producing a self aligned type epitaxial co silicide in semiconductor device | |
| KR100307559B1 (en) | Transistor Formation Method of Semiconductor Device | |
| KR940007663B1 (en) | Manufacturing method of MOS transistor | |
| KR100265050B1 (en) | Metal oxide semiconductor field effect transistor | |
| KR970003835B1 (en) | Manufacture of mos transistor of semiconductor device | |
| CN102054676B (en) | Forming methods of offset side wall and metal oxide semiconductor (MOS) transistor | |
| CN101630642A (en) | Method for manufacturing NMOS transistor | |
| CN101740390A (en) | Fabricating method of NMOS (N-channel Metal Oxide Semiconductor) transistor | |
| JPH04139834A (en) | Manufacture of semiconductor device | |
| JPS6367778A (en) | Manufacture of semiconductor device | |
| TW355841B (en) | Manufacturing method for semiconductor formed of titanium/tangsten silicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |