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TW201200628A - Coating apparatus - Google Patents

Coating apparatus Download PDF

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Publication number
TW201200628A
TW201200628A TW099121339A TW99121339A TW201200628A TW 201200628 A TW201200628 A TW 201200628A TW 099121339 A TW099121339 A TW 099121339A TW 99121339 A TW99121339 A TW 99121339A TW 201200628 A TW201200628 A TW 201200628A
Authority
TW
Taiwan
Prior art keywords
roller
heating coil
cavity
coating apparatus
base
Prior art date
Application number
TW099121339A
Other languages
English (en)
Inventor
Chia-Ling Hsu
Original Assignee
Hon Hai Prec Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hon Hai Prec Ind Co Ltd filed Critical Hon Hai Prec Ind Co Ltd
Priority to TW099121339A priority Critical patent/TW201200628A/zh
Priority to US12/894,121 priority patent/US8784564B2/en
Publication of TW201200628A publication Critical patent/TW201200628A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Coating Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Description

201200628 六、發明說明： • 【發明所屬之技術領域】 [0001]本發明係關於一種鍍膜裝置。 【先前技術] [0002] 目前光學膜片係利用具有微結構雕刻之銅滾輪，將樹脂 载體壓印後照光固化完成’而在製程上，難以避免有塵 ， 粒掉落於滾輪表面。因電锻之硬質銅硬度較小，所以當 •滾輪繼續運轉時，塵粒便在樹脂載體與輪面間隨之帶動 ’最後造成到傷而導致膜片成品光學品質不良。另一方 0 面因輪面為銅材，故暴露轸大氣環境容易形成氧化銅， 當氧化層面積增大時將造成微結構破壞，最後滚輪報廢 而須重新進行雕刻。 [0003] 於滾輪直接鍍上鎳層再行雕刻，雖增加了輪面硬度但勢 必縮短鑽石刀具使用壽命，因此最佳方式仍是在銅滚輪 上雕刻微結構，再設法製作保護層以達到輪面之耐磨耗 或者抗氧化效果。 〇 [00〇4]由於滾輪體積較大，倘箬以一般PVD方式進行鍍膜，因膜 層均勻性的考量’除了注意載體氣體流場外，可能由於 靶材置放、電漿源以及滾輪轉動等等疑慮，必須重新製 作一套較為複雜的系統。 [0005] 099121339 件下方， 輪加熱造 習知鍍膜設備中，加熱裝置一般設置在鍍犋工 從下方對工件進行加熱，惟，採用此方式對滾 成滾輪加熱不均勻。 【發明内容】 表單編號A0101 第3頁/共10頁 °"2〇37591.〇 201200628 [0006] 有鑑於此，有必要提供一種可均勻加熱滾輪的鍍膜裝置 〇 [0007] 一種鍍膜裝置，其採用原子層沈積製程進行鍍膜，所述 鍍膜裝置包括一腔體，所述腔體内壁設置有加熱單元， 所述加熱單元具有一個收容空間用以收容一滾輪以對所 述滾輪進行鍍膜。 [0008] 相較於先前技術，本發明實施例的鍍膜裝置的加熱單元 圍繞著滾輪，將滾輪圍在t間，從而使得滾輪各個位置 受熱均勻，進而可均勻加熱滚輪。 【實施方式】 [0009] 下面將結合附圖對本發明實施例作進一步詳細說明。 [0010] 請參閱圖1及圖2所示，本發明實施例提供了一種鍍膜裝 置1，其在原子層沈積（atomic layer deposition， ALD)製程對滚輪20進行鍍膜。 [0011] 鍍膜裝置1包括腔體10，腔體10包括蓋體11、底座12、 加熱單元13和用來支撐滚輪20之支撐架14，支撐架14設 置在底座12上，蓋體11蓋合在底座12上從而限定一個第 一收容空間30，第一收容空間30可以為方形、圓筒形等 〇 [0012] 滚輪20設置在支撐架14上，支撐架14將滾輪20支撐一定 高度使得滾輪20與腔體10之間具有一定空隙，即滾輪20 大致位於腔體10中部。 [0013] 加熱單元1 3包括設置在蓋體11内的第一加熱線圈1 31和設 置在底座12内的第二加熱線圈132，第一加熱線圈131和 099121339 表單編號A0101 第4頁/共10頁 0992037591-0 201200628 [0014] [0015] G [0016] [0017] 〇 [0018] [0019] 第二加熱線圈132在第一收容空間30内限定一個第二收.容 空間40，滾輪20設置在第二收容空間40内且與第一加熱 線圈131、第二加熱線圈132隔開一定距離，換言之，第 一加熱線圈131和第二加熱線圈132圍繞在滾輪2〇的外圍 且不接觸滾輪20。 優選地’第一加熱線圈131貼合在蓋體11的内壁11()上， 第二加熱線圈132貼合在底座12的内壁120上。 優選地，第二收容空間40為圓筒形，即形狀與滾輪2〇的 形狀相同。 第一加熱線圈131和第二加熱線圈132均勻纏繞滾輪20， 以利均勻加熱滚轮2 〇。 蓋體11上設置有進氣口 111 ’底座12上設置有出氣口 121 ’鍍膜時，氣體可經過進氣口 111進入腔體10内，多馀的 氣體或者鍍膜過程中產生的副產物可經過出氣口 121排出 腔體10以淨化腔體10 ’另外，也可以通過出氣口 121實現 腔體10的真空度。 當然’進氣口 111的數量可以根據需要引入腔體10内的氣 體種類設定’一個進氣口 111允許一種氣體進入腔體10。 在對滚輪20進行鍍膜時，打開蓋體11，將滾輪2〇放置在 支撐架14上，然後將蓋體11蓋合在底座12上，藉助真空 裝置通過出氣口 121實現腔體1〇内的真空度，施加電流予 第一加熱線圈131和第二加熱線圈132使其對滾輪20加熱 達到預定溫度’然後將反應氣體通過進氣口 111引入腔體 10内，反應氣體在腔體10内發生反應從而在滾輪2〇表面 099121339 表單編號Α0101 第5頁/共10頁 0992037591-0 201200628 形成鍍膜。 [0020] 由於加熱單元均勻纏繞滚輪，使得滚輪各個位置受熱均 勻，從而使得滾輪表面形成的薄膜厚度均勻。 [0021] 綜上所述，本發明確已符合發明專利之要件，遂依法提 出專利申請。惟，以上所述者僅為本發明之較佳實施方 式，自不能以此限制本案之申請專利範圍。舉凡熟悉本 案技藝之人士援依本發明之精神所作之等效修飾或變化 ，皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 [0022] 圖1係本發明實施例鍍膜裝置之軸向剖面圖。 [0023] 圖2係本發明實施例鍍膜裝置之徑向剖面圖。 【主要元件符號說明】 [0024] 鍍膜裝置：1 [0025] 腔體：10 [0026] 蓋體：11 [0027] 底座：12 [0028] 加熱單元：13 [0029] 支撐架：14 [0030] 第一加熱線圈：131 [0031] 第二加熱線圈·· 132 [0032] 滾輪：20 099121339 表單編號A0101 第6頁/共10頁 0992037591-0 201200628 [0033] 第一收容空間：30 [0034] 第二收容空間：40 [0035] 内壁：110，120 [0036] 進氣口 ： 111 [0037] 出氣口 ： 1 21 ❹ 099121339 表單編號A0101 第7頁/共10頁 0992037591-0

Claims (1)

  1. 201200628 七、申請專利範圍： 1 . 一種鍍膜裝置，其採用原子層沈積製程進行鍍膜，其改良 在於，所述鍍膜裝置包括一腔體，所述腔體内壁設置有加 熱單元，所述加熱單元具有一個收容空間用以收容一滾輪 以對所述滚輪進行鍍膜。 2 .如申請專利範圍第1項所述之鍍膜裝置，其中，所述加熱 單元包括第一加熱線圈和第二加熱線圈，所述第一加熱線 圈和第二加熱線圈共同限定所述收容空間以用來容納所述 滚輪。 3 .如申請專利範圍第2項所述之鍍膜裝置，其中，所述腔體 包括蓋體和底座，所述第一加熱線圈貼合在所述蓋體内壁 上，所述底第二加熱線圈貼合在所述底座上。 4 .如申請專利範圍第1至3任一項所述之鍍膜裝置，其中，所 述腔體内具有支撐架以支持所述滚輪。 5 .如申請專利範圍第4項所述之鍍膜裝置，其中，所述支撐 架位於所述底座内。 6 .如申請專利範圍第5項所述之鍍膜裝置，其中，所述蓋體 上具有進氣口。 7 .如申請專利範圍第6項所述之鍍膜裝置，其中，所述底座 上具有出氣口。 099121339 表單編號A0101 第8頁/共10頁 0992037591-0
TW099121339A 2010-06-29 2010-06-29 Coating apparatus TW201200628A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW099121339A TW201200628A (en) 2010-06-29 2010-06-29 Coating apparatus
US12/894,121 US8784564B2 (en) 2010-06-29 2010-09-29 Film coating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW099121339A TW201200628A (en) 2010-06-29 2010-06-29 Coating apparatus

Publications (1)

Publication Number Publication Date
TW201200628A true TW201200628A (en) 2012-01-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW099121339A TW201200628A (en) 2010-06-29 2010-06-29 Coating apparatus

Country Status (2)

Country Link
US (1) US8784564B2 (zh)
TW (1) TW201200628A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI470098B (zh) * 2013-02-01 2015-01-21 Adpv Technology Ltd Gas release device for coating process
TWI500798B (zh) * 2012-02-13 2015-09-21 Fhr Anlagenbau Gmbh 在真空塗層裝置中接收及引導條型基材之處理滾輪

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TW201200628A (en) * 2010-06-29 2012-01-01 Hon Hai Prec Ind Co Ltd Coating apparatus

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Publication number Priority date Publication date Assignee Title
TWI500798B (zh) * 2012-02-13 2015-09-21 Fhr Anlagenbau Gmbh 在真空塗層裝置中接收及引導條型基材之處理滾輪
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TWI470098B (zh) * 2013-02-01 2015-01-21 Adpv Technology Ltd Gas release device for coating process

Also Published As

Publication number Publication date
US20110315082A1 (en) 2011-12-29
US8784564B2 (en) 2014-07-22

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