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TW200845417A - Method for manufacturing light emitting diode package - Google Patents

Method for manufacturing light emitting diode package Download PDF

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Publication number
TW200845417A
TW200845417A TW96116857A TW96116857A TW200845417A TW 200845417 A TW200845417 A TW 200845417A TW 96116857 A TW96116857 A TW 96116857A TW 96116857 A TW96116857 A TW 96116857A TW 200845417 A TW200845417 A TW 200845417A
Authority
TW
Taiwan
Prior art keywords
light
emitting diode
groove
layer
phosphor
Prior art date
Application number
TW96116857A
Other languages
Chinese (zh)
Inventor
Hsien-Chin Kung
Hung-Tsung Hsu
Original Assignee
Billion Bright Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Billion Bright Optoelectronics Corp filed Critical Billion Bright Optoelectronics Corp
Priority to TW96116857A priority Critical patent/TW200845417A/en
Publication of TW200845417A publication Critical patent/TW200845417A/en

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Abstract

A method for manufacturing light emitting diode (LED) package first fabricates a silicon submount with at least one groove by wet etching, wherein a reflective layer, a transparent insulation layer and a metal bump are successively formed in the silicon submount. An LED die is mounted in the groove of the silicon submount. A protective glue is applied to fill the groove and provides a flat top face. A phosphor layer is formed on the flat top face by printing. The phosphor layer is formed with excellent uniformity due to the flat top face, and provides uniform wavelength conversion effect. Alternatively, a phosphor plate is manufactured in advance and selected with desired color temperature parameter. The phosphor plate with desired color temperature parameter is attached to the flat top face of the protective glue instead of printing.

Description

200845417 九、發明說明: 【發明所屬之技術領域】 本發明係提供一種發光二極體封裝製作方法,尤指一 種具有均勻螢光粉層之發光二極體封裝製作方法。 【先前技術】 發光二極體(Light emitting diode, LED)因為利用直接能隙 (direct bandgap)發光,且可以由半導體製程生產,所以具有 高效率及低成本之優點。隨著藍光二極體的研發成功及功 率提升,發光二極體在一般照明(general lighting)及背光(back light)應用也逐漸為人重視。 參見第一圖,為美國專利早期公開20050274959所揭露 之一種高功率發光二極體封裝,藉以封裝一高功率發光二 極體晶片401 。如該圖所示,該高功率發光二極體封裝主 要包含一石夕基座(silicone submount)402、一散熱座409及一聚 光杯413。該矽基座402具有一凹槽及位在凹槽中的電極 鲁(未標號)’發光一極體晶片401以覆晶方式安裝在石夕基 座402之凹槽中,且經由焊錫414a及414b電連接到凹槽中 的電極。凹槽中的電極藉由焊接線4l2a及41213而連接到位 在散熱座409上的外部電極406a及406b,以與外部電源連 接’错以k供遠發光"一極體晶片401電力。該聚光杯413 係安裝在散熱座409上,以使發光二杻體晶片4〇1所發出 的光線可以集中。 然而上述之習知南功率發光二極體封裝有下面缺點: 在此高功率發光二極體封裝’榮光粉(phosphor)通常係200845417 IX. Description of the Invention: [Technical Field] The present invention provides a method for fabricating a light-emitting diode package, and more particularly to a method for fabricating a light-emitting diode package having a uniform phosphor layer. [Prior Art] Since a light emitting diode (LED) emits light by direct bandgap and can be produced by a semiconductor process, it has advantages of high efficiency and low cost. With the successful development and power improvement of blue light diodes, light-emitting diodes have gradually gained attention in general lighting and backlight applications. Referring to the first figure, a high power light emitting diode package disclosed in U.S. Patent No. 2,050, 274, 959 is incorporated herein by reference. As shown in the figure, the high power LED package mainly comprises a silicon submount 402, a heat sink 409 and a condenser 413. The susceptor susceptor 402 has a recess and an electrode ruthenium (not labeled) in the recess. The illuminating one-pole wafer 401 is flip-chip mounted in the recess of the shixi base 402, and via solder 414a and 414b is electrically connected to the electrodes in the recess. The electrodes in the recesses are connected to the external electrodes 406a and 406b on the heat sink 409 by soldering wires 141a and 41213 to be connected to an external power source to provide power for the far-emission "one body wafer 401. The concentrating cup 413 is mounted on the heat sink 409 so that the light emitted from the illuminating diode wafer 4〇1 can be concentrated. However, the above-mentioned conventional power LED package has the following disadvantages: In this high-power light-emitting diode package, the phosphor is usually

i 200845417i 200845417

以點膠方式注入在凹揭φ I 才曰中由於蛍光粉在點膠製程中均句 度不易控制,造成光線的不均勻。 【發明内容】 因此本發明之目的即在於描 &曰HA & 之封裝製作方法。卩在於k供一種具有均勾營光粉層 為達成上述目的’本發㈣供—種封裝製作方法Injecting in the dispensing method in the concave φ I 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍 蛍SUMMARY OF THE INVENTION Therefore, the object of the present invention is to describe a method of fabricating a package of & HA &卩 卩 供 供 供 供 供 供 供 供 供 供 供 供 供 供 供 供 供 供 供 供 供 供 供 供 供 供 供

用 >絲I虫刻製作呈有凹择之功I ㈣ 1有^⑨基座;在凹槽内依序形成-反 射層、一透明絕緣層及一 藝/·兮人间 蜀凸塊,私一發光二極體安裝 在忒孟屬凸塊上;使用一保護^ ^ ^ ^ ^ ^ 又杉扣。亥凹槽填平,以提供一 千正之上表面;及使用印刷方式 層係印刷在-平整表面上,因h,尤~由於金先 果。 录面上目此可以提供均勾之光轉換效 再者依據本發明’亦可預先製成營光片,在 光片色溫參婁文後,將戶斤需色、、θ失 、 虫 的平拍上之勞光片貼覆在保護膠 k ^表面之上,以取代前述之印刷步驟。 ► 【實施方式】 率據本發明之—較佳具體實例之高功 : 縣製作方法之流程圖,該方法包含下列步 步驟200 (復參見第三A圖 等向性濕敍刻方式,製作出具有 _石夕晶圓上使用非 職(四甲基氯氧化曙進:式::用刪,或是 矽晶圓且非等向性濕 ^曰曰0可以選用蟲晶 1日冰疳A 100-300毫米,凹 6 200845417 槽角度β為15-140度。 步驟202 (復參見第三Β圖),在該凹槽陣列3〇〇上 鍍上一層光反射層302 ◦ 步‘ 204 (復參見第三c圖),在光反射層302上成 長一層透明絕緣層304。 步馬+ 206 (復參見第三d圖),在每一凹槽陣列3⑻ 的凹槽中,於透明絕緣層3〇4上形成一金屬凸塊3〇6 。該 _ 金屬凸塊3〇6可以用舉離法(Liftoff)或是電鍍方式,形成於 透明絕緣層304之上。 步208 (復參見第三e圖),將發光二極體31〇安 置在母至屬凸塊306之上,且發光二極體31〇之陰極及 陽極(未圖示)係在與金屬凸塊3〇6相反之一侧。該發光 一極肢310例如可以為一氮化鎵系(GaN_base(j)藍光發光二 極體,且陰極及陽極都位於藍光發光二極體之一侧。 步驟210,將凹槽中已經安裝好發光二極體31〇之凹 •槽陣列300切割成矽基座300a,其中每一矽基座3〇〇a可以 視發光需求而具有一個或多數之凹槽。 步騍212 (復苓見第三F圖),將每一矽基座300a安 I在一導熱板360上。該導熱板36〇可以為印刷電路板 (PCB)、銅板或是石墨金屬複合物,且具有對應於發光二 極體310陰極與陽極之外接電極364及多數之通孔。 步驟214 (同樣參見第三F圖),使用打線製程,焊 接二個金屬接線312 ,以導通發光二極體31〇之電極與導 熱板360上之外接電極364。 7 200845417 _步驟216 (復參見第4圖),在所得結構上加上保 °又月夕320 H疋供—平整之上表面。其中該保護膠320例 何以^乡層且分次塗佈之顿脂(silieQne )層,且石夕樹 脂可以藉由調配成份及製程條件而改變折射率㈣ index),因此可以達成折射率匹配吨)的效果。 々“218 (復茶見第三η圖),在所得結構上使用印 ,方式’塗佈一層螢光層322。依據本發明之一較佳具雕 實例,該螢光層322係在黃光室環境下,使用刮刀將= 粉溶液塗抹在平整的保護膠32〇上表面而成。該榮光粉溶 液例如可以為矽樹脂(silic〇ne)與YAG黃色螢光粉以1⑽’: 13之比例調配而成,且所形成之螢光層幻2厚度為邓—. 2〇〇微米,且與發光二極體之距離約為⑽又微来。 步驟220 (復參見第三w),在所得結構上 — 個聚光杯34G ’其中該聚光杯34Q為透明p = 塵克力料射出成型,且可以提供3—12Q度之發光=或 步驟222 (復參見第三j圖),利用導熱板細Z通 ^ 362抽氣,以在聚光杯34〇所包覆的空間内形成真空環 步驟224,將通孔362封閉。 芩見第四圖,為依據上述流程所製作的高功率笋 極體封裝。由於發光二極體310並非使用覆晶安裳:因Z 可在發光二極體310與透明絕緣層3〇4之間提供—個金^ 凸塊306,以增加散熱效果,有利於高功率發光二極二: 操作。使用保護膠320提供一平整之上表面後,再用=刷 200845417 方式形成一螢光層322 ,因此可以達到均勻的光轉換效 果。再者,於聚光杯340及導熱板36〇之間的内部空間係 為一真空環境,因此可以避免光損耗及元件内部的老化、 (aging) 〇Use > silk I insect to make a concave selection work I (four) 1 has ^ 9 pedestal; in the groove sequentially formed - reflective layer, a transparent insulating layer and an art / 兮 兮 蜀 , ,, private A light-emitting diode is mounted on the scorpion bump; a protection ^ ^ ^ ^ ^ ^ is used. The groove is filled in to provide a thousand upper surface; and the printing layer is printed on the flat surface, because h, especially due to gold. According to the invention, it can also be pre-made into a camping light sheet. After the color temperature of the light sheet is read, the color of the household is required to be colored, the θ is lost, and the insect is flat. The glazing sheet is applied over the surface of the protective adhesive k ^ to replace the aforementioned printing step. ► [Embodiment] Rate according to the present invention - a preferred embodiment of the high work: a flow chart of the county production method, the method comprises the following step 200 (refer to the third A picture isotropic wet sculpt, to produce Use _ Shi Xi wafer on the use of non-employed (tetramethyl oxychloride : :: formula:: use delete, or 矽 wafer and non-isotropic wet ^ 曰曰 0 can choose insect crystal 1 day hail A 100 -300 mm, concave 6 200845417 The groove angle β is 15-140 degrees. Step 202 (refer to the third figure), the groove array 3 is coated with a light reflecting layer 302 ◦ step '204 (see Third c)), a transparent insulating layer 304 is grown on the light reflecting layer 302. Step Horse + 206 (refer to the third d picture), in the groove of each groove array 3 (8), in the transparent insulating layer 3 A metal bump 3〇6 is formed on 4. The metal bump 3〇6 can be formed on the transparent insulating layer 304 by liftoff or electroplating. Step 208 (refer to the third e-picture) ), the light-emitting diode 31 is disposed on the mother-to-genus bump 306, and the cathode and anode (not shown) of the light-emitting diode 31 are attached One side of the metal bump 3〇6 is opposite. The light-emitting one-pole 310 can be, for example, a gallium nitride-based (GaN-based (j) blue light-emitting diode, and the cathode and the anode are located on one side of the blue light-emitting diode. Step 210, the recessed-slot array 300 in which the light-emitting diode 31 has been mounted in the recess is cut into the cymbal base 300a, wherein each of the cymbal bases 〇〇a may have one or more depending on the lighting demand. Grooves. Step 212 (see Figure 3F for retreading), each pedestal 300a is mounted on a heat conducting plate 360. The heat conducting plate 36 can be a printed circuit board (PCB), copper plate or graphite. a metal composite having a plurality of vias corresponding to the cathode and anode of the light-emitting diode 310 and a plurality of vias. Step 214 (also see FIG. 3F), using a wire bonding process, soldering two metal wires 312 to conduct The electrode of the light-emitting diode 31 is connected to the electrode 364 on the heat-conducting plate 360. 7 200845417 _Step 216 (refer to Figure 4), the structure is added with the protection and the moon is 320 H疋Surface. Among them, 320 cases of the protective rubber (silieQne) layer, and Shixi resin can change the refractive index (4) index by adjusting the composition and process conditions, so the effect of refractive index matching can be achieved. 々"218 (Fucha see third η map), in The resulting structure is printed using a pattern of 'coating a layer of phosphor layer 322. According to one embodiment of the invention, the phosphor layer 322 is placed in a yellow light chamber environment, and the powder solution is applied to the flat surface using a doctor blade. The protective glue 32 is formed on the upper surface. The glare powder solution can be prepared, for example, from silicin and YAG yellow phosphor in a ratio of 1 (10)': 13 and the phosphor layer is formed in a thickness of 2 It is Deng - 2 〇〇 micron, and the distance from the light-emitting diode is about (10) and slightly. Step 220 (refer to the third w), on the resulting structure - a collecting cup 34G 'where the collecting cup 34Q is transparent p = dusty material injection molding, and can provide 3-12Q illumination = or steps 222 (refer to the third j diagram), the heat conduction plate is used to pump the air to form a vacuum ring step 224 in the space covered by the concentrating cup 34 , to close the through hole 362. See the fourth picture, which is a high-power bamboo pole package made according to the above process. Since the light-emitting diode 310 does not use a flip-chip: a Z-bump 306 can be provided between the light-emitting diode 310 and the transparent insulating layer 3〇4 to increase the heat dissipation effect and facilitate high-power illumination. Two pole two: operation. After the protective adhesive 320 is used to provide a flat upper surface, a phosphor layer 322 is formed by the method of the brush 200845417, so that a uniform light conversion effect can be achieved. Furthermore, the internal space between the collecting cup 340 and the heat conducting plate 36A is a vacuum environment, thereby avoiding light loss and aging inside the component.

麥見第五圖,為依據本發明另一較佳具體實例之高功 率發光一極體封裝製作方法之流程圖,該流程大致盘第二 圖所示之流程類似。除了省略製作反射層、透明絕緣層及 金屬凸塊步驟外,在原本的步驟220 (參見第二圖)可以 用/^螢光片323取代。該螢光片可以先由鋼模或是玻璃 杈寻模具壓製並且固化後(步驟517A),再筛選適度色溫 之螢光片(步驟517B ),再將铲此鏠、阳极认丛, μ 保護膠32〇之平整上i面^ 好的#光片貼覆在 點膠方式將螢光粉、、主ί:。=)。習知技術係用 極體封裝完成後’才能進行色溫之筛選工作,會增二: 的不讀疋性。在本實施例之中,由於螢光片在製作好之後 已經固化,因此具有固定 夕铋,舻箱—* J j夂已μ係數,可以在篩選 寸員疋色溫參數之螢光片安置在保護膠之平整上 面上,這樣即可提升製程效率。" 呈右述,當知本發明之發光二極體封裝製作方法已 新與進步性’又本發明之構造亦未 : 直πσ及公開使用,完全符合發明專利申請要 件犮依專利法提出申請。 【圖式簡單說明】 第圖係習知技術發光二極體封裝侧視圖。 9 200845417 第二圖 係依據本發明之一較佳具體實例之發光二極 體封裝製作方法流程圖。 第三A圖至第三J圖 係對應第二圖步驟之侧視圖。 第四圖係依據第二圖流程所製成發光二極體封裝侧 視圖。 第五圖 係依據本發明之另一較佳具體實例之發光二 極體封裝製作方法流程圖。 【主要元件符號說明】 •【習知】 發光二極體晶片401 矽基座402 外部電極406a,406b 焊接線412a,412b 焊錫 414a,414b 聚光杯413 散熱座409 【本發明】 凹槽陣列300 基座300a 光反射層302 透明絕緣層304 金屬凸塊306 發光二極體310 保護膠320 螢光層322 聚光杯340 金屬接線312 導熱板360 通孔362 外接電極364 步驟 200-224 步驟 500-524 10Fig. 5 is a flow chart showing a method for fabricating a high power light-emitting diode package according to another preferred embodiment of the present invention, which is similar to the flow shown in the second figure. In addition to omitting the steps of making the reflective layer, the transparent insulating layer, and the metal bump, the original step 220 (see the second figure) can be replaced with the / luminescent sheet 323. The luminescent sheet can be first pressed by a steel mold or a glass stencil and cured (step 517A), and then filtered with a moderate color temperature luminescent sheet (step 517B), and then the shovel and the anode are plexiform, μ protection Glue 32 平 flat on the i side ^ good # light film is attached to the dispensing method will be fluorescent powder, the main ί:. =). The conventional technology is used to complete the screening of the color temperature after the completion of the polar package, which will increase the second: the non-reading. In the present embodiment, since the fluorescent sheet has been solidified after being fabricated, it has a fixed day, the box-*J j夂 has a μ coefficient, and can be placed in the fluorescent sheet of the screening color temperature parameter. The glue is flat on the top, which improves the process efficiency. " As far as the right is concerned, it is known that the manufacturing method of the light-emitting diode package of the present invention has been new and progressive' and the structure of the present invention is not: straight πσ and public use, fully comply with the invention patent application requirements and filed according to the patent law . BRIEF DESCRIPTION OF THE DRAWINGS The figure is a side view of a conventional light-emitting diode package. 9 200845417 The second figure is a flow chart of a method for fabricating a light emitting diode package according to a preferred embodiment of the present invention. The third to third J diagrams correspond to the side views of the second diagram. The fourth figure is a side view of the LED package made according to the flow of the second figure. Figure 5 is a flow chart showing a method of fabricating a light emitting diode package in accordance with another preferred embodiment of the present invention. [Main component symbol description] • [Practical] LED chip 401 矽 pedestal 402 External electrode 406a, 406b Welding line 412a, 412b Solder 414a, 414b Condenser 413 Heat sink 409 [Invention] Groove array 300 Substrate 300a Light reflecting layer 302 Transparent insulating layer 304 Metal bump 306 Light emitting diode 310 Protective adhesive 320 Fluorescent layer 322 Condenser 340 Metal wiring 312 Thermal conducting plate 360 Through hole 362 External electrode 364 Steps 200-224 Step 500- 524 10

Claims (1)

200845417 、申清專利範圍: 1 . 種發光二極體封裝萝作古、1 提供Μ 包含下列步驟: 1具有多數凹槽之矽凹槽陣列; 層 在凹槽内依序形成位於該㈣之 及位於該反射層上之一透明絕緣層 槽内的該透明絕緣層上形成-金屬凸塊; 、χ、一極體女裝在該金屬凸塊上 __ 之電極係在與金屬凸塊相反之—侧面^且4先一極月豆 切告1J該石夕凹槽陣列成多I 有至少-凹槽;域夕數之梦基座,且每-珍基座具 使用一保護膠將該石夕基 整之上表n 之相槽填平,以提供一平 使用印刷方式於該保護膠上形成一螢光層。 包含2:·如申請專利範圍第i項之發光二極體封裝製程,更 將該矽基座安裝在一導熱板上。 包含3:.如申請專利範圍第2項之發光二極體封裝製程,更 ,亥導熱板上安置一聚光杯,以包覆該矽基座。 •如申請專利範圍第2項之方法,苴中 刷電路板rprm 力』 八τ遠¥熱板為印 反(PCB)、銅板或是石墨金屬複合物材質。 所·如申请專利範圍第3項之方法,其中誃取 貝為p C塑膠或是壓克力。 Μ 4、先杯之材 6’如申請專利範圍第1項之方法,其中該使用印刷方 200845417 式形成螢光層步驟係在一黃光室中進行。 7. 如申請專利範圍第6項之方法, 用-刮刀塗佈一螢光粉溶液進行。 〆糸 8. 如申請專利範圍第7項之方法,1 "亥 (smcone) 〇〇 : 配而成。 ^之比例调 9·如申請專利範圍第〗項之方士 係由濕蝕刻一矽晶圓製 :“矽凹槽陣列 槽角度為⑸40度。 凹W度為100侧毫米,凹 10.如申請專利範圍第丨項之方 度為50 - 200微米,且盥 j其中該螢光層厚 米。 /、亥毛先—極體之距離為100微 種發光二極體封裝製作方法,包含 , 提供一矽基座,具有至少一個凹槽; ^發光二極體安裝在該凹槽内; 面;^用-保護膠將該凹槽填平,以提供—平整之上表 使用印刷方式在保護膠上形成1光層。 12:如申請專利範圍第11項之方法包含: 將该矽基座安裝在一導熱板上。 二=專利範圍第12項之方法,更包含: 在该V熱板上安置一聚光杯,勺舜 14·如申請專利範圍第12項之 k = 土座。 印刷電路板_、銅板或是 厂二中該導熱板為 之嚴屬禝合物材質。 200845417 15·如中請專利範圍第13項之方法, 材質為P C塑膠或是壓克力。 ,、w 先杯之 16.如申請專利範圍第u項之 方式形成螢Μ步驟係在—黃光室中進行:中“使用印刷 俜用一U t:專1扼圍弟16項之方法’ g中該印刷步驟 糸用一刮刀塗佈一螢光粉溶液進行。 18·如申請專利範圍第17 # ^ ^ 液為石夕樹月旨(础叫與彻*色螢其中该營光粉溶 調配而成。 ’、色忠先粉以HX) : U之比例 19.如申請專利範圍第丨 古 由濕㈣-彻製成,二: = 中姆座係 角度為15捕度。 凹^度為·3G〇毫米,凹槽 度J二?專利範圍第11項之方法,嫩營光層厚 一 一微米’且與發光二極體之距離為100微米。 1. -種發光二極體封裝製作方法,包含下列步驟: 提供-梦基座,具有至少—個凹槽; 將一發光二極體安裝在該凹槽内; 使用-保護膠將該凹槽填平,以提供—平整之上表 _,及 :置〃有預疋色溫麥數之螢光片於該保護膠上。 用〜古^請專利範圍第21項之方法,丨中該螢光片係 昼柄方式形成,且在固化後進行色溫參數筛選。 由υαΓ廿如申5月專利範圍第21項之方法,其中該榮光片係 由YAG頁色螢光粉製成。 13 200845417 24.如申請專利範圍第21項之方法,其中該保護膠係 為多層之矽樹脂層,且各層矽樹脂層具有不同之折射率以 達成折射率匹配(index matching)效果。200845417, Shen Qing patent scope: 1. Light-emitting diode package Luo Zuogu, 1 provides Μ Included in the following steps: 1 具有 groove array with many grooves; the layer is formed in the groove sequentially located in (4) and located a transparent bump on the transparent insulating layer in the reflective layer forms a metal bump; the χ, a pole body on the metal bump __ the electrode is opposite to the metal bump - Side ^ and 4 first one pole moon bean cut 1J the stone eve groove array into a multi I have at least - groove; the domain eve number of dream base, and each - Jane base with a protective glue to use the stone The phase grooves of the table n are filled in to provide a flat fluorescent layer on the protective adhesive. Including 2: · The light-emitting diode package process of claim i, and mounting the crucible base on a heat-conducting plate. Including: 3: According to the light-emitting diode packaging process of claim 2, a collecting cup is disposed on the heat conducting plate to cover the crucible base. • For example, in the method of applying for the second paragraph of the patent scope, the rprm force of the brush board is 八 远 ¥ ¥ 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热For example, the method of claim 3, wherein the shell is p C plastic or acrylic. Μ 4. First cup material 6' The method of claim 1, wherein the step of forming a phosphor layer using the printing method 200845417 is carried out in a yellow light chamber. 7. If the method of claim 6 is applied, a solution of a phosphor powder is applied by a doctor blade. 〆糸 8. If you apply for the method of item 7 of the patent scope, 1 " smcone 〇〇 : is made. ^ Proportional adjustment 9 · The square of the patent application scope is made by wet etching a wafer: "矽 groove array groove angle is (5) 40 degrees. Concave W degree is 100 mm side, concave 10. If applying for a patent The range of the third item is 50 - 200 μm, and 盥j is the thickness of the phosphor layer. /, Haimao-the distance between the polar bodies is 100 micro-light-emitting diode package manufacturing methods, including, providing one a susceptor base having at least one recess; a light-emitting diode mounted in the recess; a surface; a protective adhesive that fills the recess to provide a flattening surface on the protective adhesive Forming a light layer. 12: The method of claim 11, comprising: mounting the crucible base on a heat conducting plate. 2. The method of claim 12, further comprising: placing the V hot plate A concentrating cup, spoon 舜 14 · as claimed in the scope of the patent item 12 k = earth seat. Printed circuit board _, copper plate or factory two of the heat-conducting plate is strictly chelating material. 200845417 15 · as in Please refer to the method of item 13 of the patent, which is made of PC plastic or acrylic. , w first cup of 16. The method of forming the fluoranium in the way of applying the patent scope range u is carried out in the yellow light room: "using a printing method, using a U t: a method of using a 16-year-old brother" The printing step is carried out by coating a phosphor powder solution with a doctor blade. 18·If the scope of application for patents is 17# ^ ^ The liquid is for the purpose of Shi Xishu. (The basis is called the blending of the light and the color of the camp. The color is firstly powdered with HX): the ratio of U is 19. For example, if the scope of the patent application is the same as that of the wet (four)-cut, the second: = the angle of the middle seat is 15 degrees. The concave degree is · 3G〇 mm, and the groove degree is J? In the method of claim 11, the nun camping layer is one micron thick and the distance from the light emitting diode is 100 micrometers. 1. A method for fabricating a light-emitting diode package, comprising the steps of: providing a dream base having at least one groove; mounting a light-emitting diode in the groove; using the protective glue to the groove Fill in to provide - flatten the top sheet _, and: set the fluorescent sheet with the pre-tank temperature wheat number on the protective gel. Using the method of No. 21 of the ancient patent application range, the fluorescent film is formed by the shank method, and the color temperature parameter is screened after curing. The method of claim 21, wherein the glory film is made of YAG page color phosphor. The method of claim 21, wherein the protective adhesive is a multi-layered resin layer, and each layer of the resin layer has a different refractive index to achieve an index matching effect.
TW96116857A 2007-05-11 2007-05-11 Method for manufacturing light emitting diode package TW200845417A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102270735A (en) * 2010-06-01 2011-12-07 黄俊龙 Heat dissipation substrate and light emitting diode module using same
TWI400823B (en) * 2010-08-04 2013-07-01 Advanced Optoelectronic Tech Led package and method for manufacturing the same
CN103855268A (en) * 2012-11-30 2014-06-11 展晶科技(深圳)有限公司 Manufacturing method of light-emitting diode-based light-emitting device
TWI555237B (en) * 2009-11-16 2016-10-21 波音特工程股份有限公司 Optical element device and fabricating method thereof
CN103855268B (en) * 2012-11-30 2016-11-30 中山市云创知识产权服务有限公司 LED illuminating device manufacture method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI555237B (en) * 2009-11-16 2016-10-21 波音特工程股份有限公司 Optical element device and fabricating method thereof
CN102270735A (en) * 2010-06-01 2011-12-07 黄俊龙 Heat dissipation substrate and light emitting diode module using same
TWI400823B (en) * 2010-08-04 2013-07-01 Advanced Optoelectronic Tech Led package and method for manufacturing the same
CN103855268A (en) * 2012-11-30 2014-06-11 展晶科技(深圳)有限公司 Manufacturing method of light-emitting diode-based light-emitting device
CN103855268B (en) * 2012-11-30 2016-11-30 中山市云创知识产权服务有限公司 LED illuminating device manufacture method

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