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TW200644281A - Light-emitting device - Google Patents

Light-emitting device

Info

Publication number
TW200644281A
TW200644281A TW094141771A TW94141771A TW200644281A TW 200644281 A TW200644281 A TW 200644281A TW 094141771 A TW094141771 A TW 094141771A TW 94141771 A TW94141771 A TW 94141771A TW 200644281 A TW200644281 A TW 200644281A
Authority
TW
Taiwan
Prior art keywords
layer
main surface
light
gan substrate
emitting device
Prior art date
Application number
TW094141771A
Other languages
English (en)
Inventor
Youichi Nagai
Koji Katayama
Hiroyuki Kitabayashi
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW200644281A publication Critical patent/TW200644281A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02B—HYDRAULIC ENGINEERING
    • E02B7/00—Barrages or weirs; Layout, construction, methods of, or devices for, making same
    • E02B7/20—Movable barrages; Lock or dry-dock gates
    • E02B7/40—Swinging or turning gates
    • E02B7/48—Roof or double shutter gates
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02B—HYDRAULIC ENGINEERING
    • E02B8/00—Details of barrages or weirs ; Energy dissipating devices carried by lock or dry-dock gates
    • E02B8/04—Valves, slides, or the like; Arrangements therefor; Submerged sluice gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02B—HYDRAULIC ENGINEERING
    • E02B7/00—Barrages or weirs; Layout, construction, methods of, or devices for, making same
    • E02B7/20—Movable barrages; Lock or dry-dock gates
    • E02B7/40—Swinging or turning gates
    • E02B7/44—Hinged-leaf gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Civil Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW094141771A 2005-06-13 2005-11-28 Light-emitting device TW200644281A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005172364A JP4297084B2 (ja) 2005-06-13 2005-06-13 発光装置の製造方法および発光装置

Publications (1)

Publication Number Publication Date
TW200644281A true TW200644281A (en) 2006-12-16

Family

ID=36933575

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094141771A TW200644281A (en) 2005-06-13 2005-11-28 Light-emitting device

Country Status (8)

Country Link
US (1) US7491974B2 (zh)
EP (1) EP1734590A3 (zh)
JP (1) JP4297084B2 (zh)
KR (1) KR101200595B1 (zh)
CN (1) CN100552989C (zh)
CA (1) CA2528736A1 (zh)
SG (1) SG128595A1 (zh)
TW (1) TW200644281A (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100735496B1 (ko) * 2006-05-10 2007-07-04 삼성전기주식회사 수직구조 질화갈륨계 ｌｅｄ 소자의 제조방법
JP5037980B2 (ja) * 2007-03-22 2012-10-03 京セラ株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
DE102007057756B4 (de) * 2007-11-30 2022-03-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
TW200945631A (en) 2007-12-28 2009-11-01 Nichia Corp Semiconductor light emitting element and method for manufacturing the same
JP5146817B2 (ja) * 2008-03-24 2013-02-20 スタンレー電気株式会社 半導体発光素子の製造方法
JP5169959B2 (ja) * 2009-04-08 2013-03-27 信越半導体株式会社 発光素子の製造方法
TWI466323B (zh) 2011-11-07 2014-12-21 Ind Tech Res Inst 發光二極體
CN103094428A (zh) * 2013-01-30 2013-05-08 合肥彩虹蓝光科技有限公司 Led自对准粗化制程方法
KR101504331B1 (ko) * 2013-03-04 2015-03-19 삼성전자주식회사 발광소자 패키지
KR101967837B1 (ko) 2013-03-11 2019-04-10 삼성전자주식회사 반도체 발광 소자
JP6268724B2 (ja) * 2013-03-18 2018-01-31 沖電気工業株式会社 窒化物半導体のテクスチャ構造、窒化物半導体発光素子、及びテクスチャ構造形成方法
KR102415075B1 (ko) * 2015-09-30 2022-06-30 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
JP6668863B2 (ja) * 2016-03-22 2020-03-18 日亜化学工業株式会社 発光素子

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0783141B2 (ja) * 1986-08-22 1995-09-06 株式会社東芝 ガラス封止型発光半導体装置
JPH05102524A (ja) * 1991-10-11 1993-04-23 Oki Electric Ind Co Ltd 半導体素子
JP3232152B2 (ja) * 1992-05-14 2001-11-26 株式会社リコー 発光ダイオードアレイ
JPH11251629A (ja) * 1998-02-27 1999-09-17 Daido Steel Co Ltd 半導体発光素子の製造方法
JP3625377B2 (ja) 1998-05-25 2005-03-02 ローム株式会社 半導体発光素子
JP3665243B2 (ja) * 1999-11-19 2005-06-29 日亜化学工業株式会社 窒化物半導体素子及びその製造方法
US20020136932A1 (en) * 2001-03-21 2002-09-26 Seikoh Yoshida GaN-based light emitting device
JP4244542B2 (ja) 2001-08-28 2009-03-25 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP3802424B2 (ja) * 2002-01-15 2006-07-26 株式会社東芝 半導体発光素子及びその製造方法
WO2003100873A1 (en) 2002-05-28 2003-12-04 Matsushita Electric Works, Ltd. Light emitting element, light emitting device and surface emission illuminating device using it
JP3841092B2 (ja) * 2003-08-26 2006-11-01 住友電気工業株式会社 発光装置
JP2005116615A (ja) * 2003-10-03 2005-04-28 Dowa Mining Co Ltd 半導体発光素子及びその製造方法
JP4474892B2 (ja) 2003-10-14 2010-06-09 日亜化学工業株式会社 フリップチップ型ｌｅｄ
JP2005191530A (ja) * 2003-12-03 2005-07-14 Sumitomo Electric Ind Ltd 発光装置
US7385226B2 (en) * 2004-03-24 2008-06-10 Epistar Corporation Light-emitting device

Also Published As

Publication number Publication date
JP2006351596A (ja) 2006-12-28
US7491974B2 (en) 2009-02-17
CN1881628A (zh) 2006-12-20
CA2528736A1 (en) 2006-12-13
SG128595A1 (en) 2007-01-30
EP1734590A3 (en) 2013-10-09
EP1734590A2 (en) 2006-12-20
KR20060129937A (ko) 2006-12-18
KR101200595B1 (ko) 2012-11-12
US20060278864A1 (en) 2006-12-14
CN100552989C (zh) 2009-10-21
JP4297084B2 (ja) 2009-07-15

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