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TW200717863A - Gallium nitride-based compound semiconductor light-emitting device - Google Patents

Gallium nitride-based compound semiconductor light-emitting device

Info

Publication number
TW200717863A
TW200717863A TW095124089A TW95124089A TW200717863A TW 200717863 A TW200717863 A TW 200717863A TW 095124089 A TW095124089 A TW 095124089A TW 95124089 A TW95124089 A TW 95124089A TW 200717863 A TW200717863 A TW 200717863A
Authority
TW
Taiwan
Prior art keywords
gallium nitride
based compound
compound semiconductor
emitting device
semiconductor light
Prior art date
Application number
TW095124089A
Other languages
Chinese (zh)
Other versions
TWI334650B (en
Inventor
Hisayuki Miki
Hironao Shinohara
Koji Kamei
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200717863A publication Critical patent/TW200717863A/en
Application granted granted Critical
Publication of TWI334650B publication Critical patent/TWI334650B/en

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  • Led Devices (AREA)

Abstract

An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency. The inventive gallium nitride-based compound semiconductor light-emitting device has a gallium nitride-based compound semiconductor layer structure comprising an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, on a substrate, wherein a positive electrode provided on the p-type semiconductor layer is a reflective positive electrode comprising a transparent material layer and a reflective metal layer formed on the transparent material layer.
TW95124089A 2005-07-04 2006-07-03 Gallium nitride-based compound semiconductor light-emitting device TWI334650B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005195095A JP5030398B2 (en) 2005-07-04 2005-07-04 Gallium nitride compound semiconductor light emitting device

Publications (2)

Publication Number Publication Date
TW200717863A true TW200717863A (en) 2007-05-01
TWI334650B TWI334650B (en) 2010-12-11

Family

ID=37751113

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95124089A TWI334650B (en) 2005-07-04 2006-07-03 Gallium nitride-based compound semiconductor light-emitting device

Country Status (4)

Country Link
JP (1) JP5030398B2 (en)
KR (2) KR20100020532A (en)
CN (1) CN100568561C (en)
TW (1) TWI334650B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI455359B (en) * 2010-06-21 2014-10-01 Panasonic Corp Ultraviolet semiconductor light-emitting element

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4867223B2 (en) * 2005-07-25 2012-02-01 パナソニック株式会社 Semiconductor light emitting device and lighting device using the same
US8026527B2 (en) * 2007-12-06 2011-09-27 Bridgelux, Inc. LED structure
KR100980649B1 (en) * 2008-05-20 2010-09-08 고려대학교 산학협력단 Light emitting device comprising a bent reflective layer and its manufacturing method
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
KR101039886B1 (en) * 2009-10-21 2011-06-09 엘지이노텍 주식회사 Light emitting device and manufacturing method
JP2011199119A (en) * 2010-03-23 2011-10-06 Panasonic Corp Light emitting element, and light emitting device
TWI466325B (en) 2010-06-25 2014-12-21 Toyoda Gosei Kk Semiconductor light emitting element
KR101145891B1 (en) * 2010-08-04 2012-05-15 한국광기술원 Led with retroreflector and the manufacturing method thereof
KR101138951B1 (en) * 2010-08-23 2012-04-25 서울옵토디바이스주식회사 Light emitting diode
JP5633057B2 (en) * 2011-02-09 2014-12-03 豊田合成株式会社 Semiconductor light emitting device and semiconductor light emitting device
JP5582054B2 (en) 2011-02-09 2014-09-03 豊田合成株式会社 Semiconductor light emitting device
JP5949294B2 (en) * 2011-08-31 2016-07-06 日亜化学工業株式会社 Semiconductor light emitting device
JP6063220B2 (en) * 2012-11-21 2017-01-18 スタンレー電気株式会社 Light emitting element
KR102185689B1 (en) 2014-06-12 2020-12-02 엘지이노텍 주식회사 Light emitting device and light emitting device package including the same
CN105118905B (en) * 2015-09-07 2017-10-10 湘能华磊光电股份有限公司 A kind of LED core plate electrode and preparation method thereof
KR102443694B1 (en) 2016-03-11 2022-09-15 삼성전자주식회사 Light emitting diode(LED) device for improving current spread characteristics and light extraction efficiency
CN107845711A (en) * 2017-11-03 2018-03-27 江苏新广联半导体有限公司 LED flip chip of motor current extension uniformity and preparation method thereof
CN116960253B (en) * 2023-09-19 2023-12-19 江西兆驰半导体有限公司 Flip light-emitting diode chip and preparation method thereof
CN116936711B (en) * 2023-09-19 2023-12-15 江西兆驰半导体有限公司 Vertical light emitting diode, preparation method thereof and LED lamp panel

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
JPH11220171A (en) * 1998-02-02 1999-08-10 Toyoda Gosei Co Ltd Gallium nitride compound semiconductor device
JP3736181B2 (en) * 1998-05-13 2006-01-18 豊田合成株式会社 Group III nitride compound semiconductor light emitting device
JP2003243705A (en) * 2002-02-07 2003-08-29 Lumileds Lighting Us Llc Light emitting semiconductor method and device
JP4123828B2 (en) * 2002-05-27 2008-07-23 豊田合成株式会社 Semiconductor light emitting device
JP3818297B2 (en) * 2003-05-27 2006-09-06 松下電工株式会社 Semiconductor light emitting device
JP2004356237A (en) * 2003-05-27 2004-12-16 Matsushita Electric Works Ltd Semiconductor light emitting element
JP4604488B2 (en) * 2003-12-26 2011-01-05 日亜化学工業株式会社 Nitride semiconductor light emitting device and manufacturing method thereof
KR100631840B1 (en) * 2004-06-03 2006-10-09 삼성전기주식회사 Nitride semiconductor light emitting device for flip chip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI455359B (en) * 2010-06-21 2014-10-01 Panasonic Corp Ultraviolet semiconductor light-emitting element

Also Published As

Publication number Publication date
KR20100020532A (en) 2010-02-22
JP5030398B2 (en) 2012-09-19
CN101213678A (en) 2008-07-02
JP2007013045A (en) 2007-01-18
KR20080015922A (en) 2008-02-20
TWI334650B (en) 2010-12-11
CN100568561C (en) 2009-12-09
KR100967841B1 (en) 2010-07-05

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