CN105118905B - A kind of LED core plate electrode and preparation method thereof - Google Patents

Abstract

The application discloses a method for manufacturing an electrode of an LED chip, comprising the steps of: dry etching the epitaxial layer to expose an N-type GaN layer; making an indium tin oxide thin film conductive layer; vapor-depositing a chromium layer; vapor-depositing a nickel layer; The nickel layer is annealed, so that the nickel layer forms uniformly distributed spherical nickel particles on the surface of the chromium layer; the chromium layer is etched using the spherical nickel particles as a mask, and etched on the surface of the chromium layer to form nano-scale concave rectangular pits; Spherical nickel particles; sequentially vapor-depositing an aluminum layer, a titanium layer, a platinum layer and a gold layer; peeling off the adhesive to obtain the LED chip electrode. The invention also discloses an electrode of an LED chip, which comprises from bottom to top: a chromium layer, an aluminum layer, an evaporated aluminum layer, a titanium layer, a platinum layer and a gold layer, and a nanoscale concave rectangular shape is etched on the surface of the chromium layer. pit. The invention makes the surface of the chromium layer form nano-scale concavo-convex shapes, increases the light emission rate on the surface of the chromium layer, and increases the light reflected back into the chip by the aluminum layer and re-reflected again, and the luminous efficiency of the LED is obviously improved.

Description

A kind of LED chip electrode and manufacturing method thereof

technical field

The invention relates to the field of optoelectronic devices, in particular to an LED chip electrode and a manufacturing method thereof.

Background technique

LED is a solid light source, which is a light-emitting device made of semiconductor P-N junction. During forward conduction, the minority carriers in the semiconductor recombine with the majority carriers, and the released energy is emitted in the form of photons or partly in the form of photons. Semiconductor LED lighting has significant advantages such as high efficiency, energy saving, environmental protection, long service life, etc., and has been widely used in various fields such as street lamps, display screens, indoor lighting, and automobile lights. How to improve luminous efficiency is the main problem that LED needs to solve.

At present, most LED electrodes use a reflective electrode structure containing an aluminum layer. The aluminum layer in the electrode can reflect the light transmitted to the P and N electrodes back to the inside of the chip, and the reflected light is emitted from the inside of the chip, thereby improving the LED display efficiency. External quantum efficiency of LED chips. The Al layer is directly in contact with the surface of the GaN epitaxial layer. Although the luminous efficiency of the LED can be guaranteed, there are two problems: one is that the adhesion between the entire electrode and GaN will be poor, and the electrode will be damaged during the subsequent wire bonding and bonding process. It is easy to fall off; the second is that the voltage will increase. In the existing electrode structure, a metal thin film, such as a chromium layer, is designed between the aluminum layer and the surface of the GaN epitaxial layer, which can not only ensure the adhesion of the electrode, but also reduce the voltage, but this thin film will generate light. Absorption, thus affecting the luminous efficiency of the LED.

Contents of the invention

In order to solve the above technical problems, the present invention provides a method for manufacturing LED chip electrodes, comprising steps:

The dry etching equipment ICP etches the epitaxial layer including the N-type GaN layer, the quantum well and the P-type GaN layer from bottom to top, forming steps to expose the N-type GaN layer. The etching depth is 1-2 μm, and the width of the cutting line is in Between 10-25μm;

Electron beam vacuum evaporation method is used to make the conductive layer of indium tin oxide film, and the film thickness is , chamber temperature 150-350℃, oxygen flow rate 5-15sccm, vacuum degree 3×10 ^-5 -3×10 ^-7 Torr; coating negative photoresist with a thickness of 2.5-3.0μm, exposing and developing, exposing electrodes Area;

Electron beam vacuum evaporation method evaporates a chromium layer of 10-12nm, and the coating rate is , the coating power is 0.35-0.45 times the output power of the electron gun, and the cavity pressure is 1.0×10 ^-6 Torr;

The nickel layer of 5-10nm is vapor-deposited by the electron beam vacuum evaporation method, and the coating rate is set to , the coating power is 0.16-0.19 times the output power of the electron gun, and the cavity pressure is 1.0×10 ^-6 Torr;

The nickel layer is annealed in a nitrogen atmosphere, so that the nickel layer forms evenly distributed spherical nickel particles on the surface of the chromium layer, the distance between the spherical nickel particles is 2.5-4nm, and the nitrogen flow rate is 5-7L/ min, the temperature is 500-540°C, and the time is 60-120s;

Utilize spherical nickel particles as a mask to etch the chromium layer to form nanoscale concave rectangular pits on the surface of the chromium layer. The length, width and height of the concave rectangular pits are 3-8nm, and the distance between adjacent concave rectangular pits 2.5-4nm, dry etching using reactive ion etching machine or inductively coupled plasma etching machine, the etching gas used is BCl3, Cl2 or Ar, and the concentration of BCl3 is 15-22ml/ min, the concentration of Cl2 is 20-30ml/min, and the concentration of Ar is 24-33ml/min;

Using a solution containing ferric chloride, hydrochloric acid and water to corrode and remove spherical nickel particles;

Electron beam vacuum evaporation method sequentially evaporates aluminum layer, titanium layer, platinum layer and gold layer;

Peel off the adhesive to obtain the LED chip electrodes.

Preferably, the step uses a solution containing ferric chloride, hydrochloric acid and water to corrode and remove the spherical nickel particles, further, using ferric chloride with a mass fraction of 8-15%, hydrochloric acid with a mass fraction of 10-18%, and the rest being The water solution corrodes and removes the spherical nickel particles, the solution temperature is 50-65° C., and the reaction time is 5-10 minutes.

Preferably, the electron beam vacuum evaporation method in the step evaporates an aluminum layer, a titanium layer, a platinum layer and a gold layer in sequence, further, the evaporation conditions are: the coating rate is , the power is 0.30-0.45 times of its output power, and the cavity pressure is 1.0×10 ^-6 Torr.

Preferably, the step of peeling and removing the glue is further, using the blue film to peel off the metal, and after the metal is peeled off, put the chip into the glue remover for ultrasonic immersion, wherein the glue remover contains a mass fraction of 99.5 -99.8% of N-methylpyrrolidone and 0.2-0.5% of water by mass fraction.

The present invention also discloses an LED chip electrode manufactured by using the method for manufacturing the LED chip electrode. The LED chip electrode sequentially includes: a chromium layer, an aluminum layer, an evaporated aluminum layer, a titanium layer, a platinum layer and The gold layer, wherein nanoscale concave rectangular pits are etched on the surface of the chromium layer, the length, width and height of the concave rectangular pits are 3-8nm, and the distance between adjacent concave rectangular pits is 2.5-4nm.

Compared with the prior art, the LED chip electrode and its manufacturing method described in the present invention have achieved the following effects:

The present invention makes the surface of the chromium layer under the aluminum layer form nanoscale concavo-convex shapes. Compared with the flat surface, the light can go out in the form of diffuse reflection and scattering on the concavo-convex surface, increasing the light on the surface of the chromium layer. The output rate of the LED increases, and then increases the amount of light reaching the aluminum layer. In this way, the light reflected back into the chip by the aluminum layer and reflected again will also increase, and the luminous efficiency of the LED is significantly improved. The electrode structure of the present invention is 5 times brighter than the traditional method. %-6%.

Description of drawings

The accompanying drawings described here are used to provide a further understanding of the present invention, and constitute a part of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention, and do not constitute improper limitations to the present invention. In the attached picture:

Fig. 1 is the LED chip electrode structure of prior art;

Fig. 2 is LED chip electrode structure of the present invention;

Fig. 3 is the nanoscale concave rectangular pit on the surface of the chromium layer of the present invention;

Figure 4 is the photoresist coated on the surface of the chip, exposing the electrode area;

Fig. 5 is evaporated chromium layer;

Fig. 6 is evaporated nickel layer;

Fig. 7 forms nickel ball after the nickel layer is annealed;

Fig. 8 is a nanometer-scale concave rectangular pit formed on the surface of the chromium layer by etching with a nickel ball as a mask;

Figure 9 shows the removal of nickel balls by chemical solution.

detailed description

Certain terms are used, for example, in the description and claims to refer to particular components. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The specification and claims do not use the difference in name as a way to distinguish components, but use the difference in function of components as a criterion for distinguishing. As mentioned throughout the specification and claims, "comprising" is an open term, so it should be interpreted as "including but not limited to". "Approximately" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and basically achieve the technical effect. In addition, the term "coupled" herein includes any direct and indirect electrical coupling means. Therefore, if it is described that a first device is coupled to a second device, it means that the first device may be directly electrically coupled to the second device, or indirectly electrically coupled through other devices or coupling means. connected to the second device. The following descriptions in the specification are preferred implementation modes for implementing the present invention, but the descriptions are for the purpose of illustrating the general principles of the present invention, and are not intended to limit the scope of the present invention. The scope of protection of the present invention should be defined by the appended claims.

The present invention will be described in further detail below in conjunction with the accompanying drawings, but it is not intended to limit the present invention.

Example 1:

With reference to Fig. 2-Fig. 9, this embodiment provides a method for manufacturing LED chip electrodes, including steps:

Step 101: The dry etching equipment ICP etches the epitaxial layer 1 including the N-type GaN layer, the quantum well and the P-type GaN layer from bottom to top, forming steps to expose the N-type GaN layer, with an etching depth of 1 μm, and cutting lines The width is between 10 μm, the P electrode is made on the P-type GaN layer, and the N electrode is made on the N-type GaN layer;

Step 102: Electron beam vacuum evaporation method is used to make the conductive layer of indium tin oxide film, and the film thickness is , the cavity temperature is 150°C, the oxygen flow rate is 5 sccm, and the vacuum degree is 3×10 ^-5 Torr;

Step 103: As shown in FIG. 4, apply a negative photoresist 5 with a thickness of 2.5 μm, expose and develop to expose the electrode area;

Step 104: as shown in Figure 5, the chromium layer 2 of 10nm is vapor-deposited by the electron beam vacuum evaporation method, and the coating rate is , the coating power is 0.35 times the output power of the electron gun, and the cavity pressure is 1.0×10 ^-6 Torr;

Step 105: In combination with FIG. 6, the nickel layer 6 of 5-10nm is evaporated by the electron beam vacuum evaporation method, and the coating rate is set to , the coating power is 0.16 times the output power of the electron gun, and the cavity pressure is 1.0×10 ^-6 Torr;

Step 106: In conjunction with FIG. 7, the nickel layer 6 is annealed in a nitrogen atmosphere, so that the nickel layer 6 forms uniformly distributed spherical nickel particles 61 on the surface of the chromium layer 2, and the distance between the spherical nickel particles 61 is The temperature is 2.5nm, the nitrogen flow rate is 5L/min, the temperature is 500°C, and the time is 60s;

Step 107: As shown in FIG. 8, use the spherical nickel particles 61 as a mask to etch the chromium layer 2, etch on the surface of the chromium layer 2 to form a nanoscale concave rectangular pit. The length a, width b, and The height h is 3nm, and the distance between adjacent concave rectangular pits is 2.5nm. The etching is performed by dry etching using a reactive ion etching machine or an inductively coupled plasma etching machine. The etching gas used is BCl3, Cl2 or The concentration of Ar and BCl3 is 15ml/min, the concentration of Cl2 is 20ml/min, and the concentration of Ar is 24ml/min;

Step 108: use a solution containing ferric chloride, hydrochloric acid and water to corrode and remove the spherical nickel particles 61; as shown in Figure 9, use a solution in which the mass fraction is 8% ferric chloride, 10% hydrochloric acid, and the rest is water The spherical nickel particles 61 are removed by etching, the solution temperature is 50° C., and the reaction time is 5 minutes.

Step 109: The electron beam vacuum evaporation method sequentially evaporates the aluminum layer 3, the titanium layer, the platinum layer, and the gold layer. 4 in FIG. 2 represents the titanium layer, the platinum layer, and the gold layer; the evaporation conditions are: the coating rate is , the coating power is 0.30 times the output power of the electron gun, and the cavity pressure is 1.0×10 ^-6 Torr.

Step 110: Peel off the adhesive to obtain the LED chip electrodes. Use the blue film to peel off the metal, and after the metal is peeled off, put the chip into the glue remover for ultrasonic soaking, wherein the glue remover includes N-methylpyrrolidone with a mass fraction of 99.5% and a mass fraction of 0.2% of water.

The LED chip electrode manufactured according to the above method, as shown in Figure 2, the LED chip electrode includes: a chromium layer 2, an aluminum layer 3, a titanium layer, a platinum layer and a gold layer from bottom to top, as shown in Figure 3, Nano-scale concave rectangular pits are etched on the surface of the chromium layer 2, the length, width and height of the concave rectangular pits are 3nm, and the distance between adjacent concave rectangular pits is 2.5nm.

Example 2:

With reference to Fig. 2-Fig. 9, this embodiment provides a method for manufacturing LED chip electrodes, including steps:

Step 201: The dry etching equipment ICP etches the epitaxial layer 1 including the N-type GaN layer, the quantum well and the P-type GaN layer from bottom to top, forming steps to expose the N-type GaN layer, with an etching depth of 2 μm, and cutting lines The width is between 25 μm, the P electrode is made on the P-type GaN layer, and the N electrode is made on the N-type GaN layer;

Step 202: Electron beam vacuum evaporation method is used to make the conductive layer of indium tin oxide film, and the film thickness is , the cavity temperature is 350°C, the oxygen flow rate is 15 sccm, and the vacuum degree is 3×10 ^-7 Torr;

Step 203: As shown in FIG. 4 , coating a negative photoresist 5 with a thickness of 3.0 μm, exposing and developing to expose the electrode area;

Step 204: As shown in Figure 5, the chromium layer 2 of 12nm is evaporated by the electron beam vacuum evaporation method, and the coating rate is , the coating power is 0.45 times the output power of the electron gun, and the cavity pressure is 1.0×10 ^-6 Torr;

Step 205: in conjunction with FIG. 6, the nickel layer 6 of 10nm is evaporated by the electron beam vacuum evaporation method, and the coating rate is set to , the coating power is 0.19 times the output power of the electron gun, and the cavity pressure is 1.0×10 ^-6 Torr;

Step 206: In conjunction with FIG. 7, the nickel layer 6 is annealed in a nitrogen atmosphere, so that the nickel layer 6 forms uniformly distributed spherical nickel particles 61 on the surface of the chromium layer 2, and the distance between the spherical nickel particles 61 is The temperature is 4nm, the nitrogen flow rate is 7L/min, the temperature is 540°C, and the time is 120s;

Step 207: As shown in FIG. 8, use the spherical nickel particles 61 as a mask to etch the chromium layer 2, and etch the surface of the chromium layer 2 to form a nanoscale concave rectangular pit. The length a, width b, and The height h is 8nm, and the distance between adjacent concave rectangular pits is 4nm. The etching is performed by reactive ion etching machine or inductively coupled plasma etching machine for dry etching, and the etching gas used is BCl3, Cl2 or Ar , the concentration of BCl3 is 22ml/min, the concentration of Cl2 is 30ml/min, and the concentration of Ar is 33ml/min;

Step 208: use a solution containing ferric chloride, hydrochloric acid and water to corrode and remove the spherical nickel particles 61; as shown in Figure 9, use a solution with a mass fraction of 15% ferric chloride, 18% hydrochloric acid, and the rest as water The spherical nickel particles 61 are removed by etching, the solution temperature is 65° C., and the reaction time is 10 minutes.

Step 209: The electron beam vacuum evaporation method sequentially evaporates the aluminum layer 3, the titanium layer, the platinum layer, and the gold layer. 4 in FIG. 2 represents the titanium layer, the platinum layer, and the gold layer; the evaporation conditions are: the coating rate is , the coating power is 0.45 times the output power of the electron gun, and the cavity pressure is 1.0×10 ^-6 Torr.

Step 210: Peel off the adhesive to obtain the LED chip electrodes. Use the blue film to peel off the metal, and after the metal is peeled off, put the chip into the glue remover for ultrasonic soaking, wherein the glue remover includes N-methylpyrrolidone with a mass fraction of 99.8% and a mass fraction of 0.5% of water.

The LED chip electrode manufactured according to the above method, as shown in Figure 2, the LED chip electrode includes: a chromium layer 2, an aluminum layer 3, a titanium layer, a platinum layer and a gold layer from bottom to top, as shown in Figure 3, Nanoscale concave rectangular pits are etched on the surface of the chromium layer 2. The length, width and height of the concave rectangular pits are 8nm, and the distance between adjacent concave rectangular pits is 4nm.

Example 3:

With reference to Fig. 2-Fig. 9, this embodiment provides a method for manufacturing LED chip electrodes, including steps:

Step 301: The dry etching equipment ICP etches the epitaxial layer 1 including the N-type GaN layer, the quantum well and the P-type GaN layer from bottom to top in order to form steps to expose the N-type GaN layer, the etching depth is 1.5 μm, and the cutting line The width is between 17 μm, the P electrode is made on the P-type GaN layer, and the N electrode is made on the N-type GaN layer;

Step 302: making an indium tin oxide thin film conductive layer by electron beam vacuum evaporation method, the film thickness is The chamber temperature is 250°C, the oxygen flow rate is 10sccm, and the vacuum degree is 5.05×10 ^-6 Torr;

Step 303: As shown in FIG. 4 , coat a negative photoresist 5 with a thickness of 2.7 μm, expose and develop to expose the electrode area;

Step 304: As shown in Figure 5, the chromium layer 2 of 11nm is evaporated by the electron beam vacuum evaporation method, and the coating rate is , the coating power is 0.4 times the output power of the electron gun, and the cavity pressure is 1.0×10 ^-6 Torr;

Step 305: In conjunction with FIG. 6, the nickel layer 6 of 7nm is evaporated by the electron beam vacuum evaporation method, and the coating rate is set to , the coating power is 0.17 times the output power of the electron gun, and the cavity pressure is 1.0×10 ^-6 Torr;

Step 306: In conjunction with FIG. 7, the nickel layer 6 is annealed in a nitrogen atmosphere, so that the nickel layer 6 forms uniformly distributed spherical nickel particles 61 on the surface of the chromium layer 2, and the distance between the spherical nickel particles 61 is The temperature is 3.2nm, the nitrogen flow rate is 6L/min, the temperature is 520°C, and the time is 90s;

Step 307: As shown in FIG. 8, use the spherical nickel particles 61 as a mask to etch the chromium layer 2, and etch the surface of the chromium layer 2 to form a nanoscale concave rectangular pit. The length a, width b, and The height h is 5nm, and the distance between adjacent concave rectangular pits is 3.2nm. The etching is performed by dry etching using a reactive ion etching machine or an inductively coupled plasma etching machine. The etching gas used is BCl3, Cl2 or The concentration of Ar and BCl3 is 18ml/min, the concentration of Cl2 is 25ml/min, and the concentration of Ar is 28ml/min;

Step 308: use a solution containing ferric chloride, hydrochloric acid and water to corrode and remove the spherical nickel particles 61; as shown in Figure 9, use a solution in which the mass fraction is 11% ferric chloride, 14% hydrochloric acid, and the rest is water The spherical nickel particles 61 are removed by etching, the solution temperature is 60° C., and the reaction time is 7 minutes.

Step 309: The electron beam vacuum evaporation method sequentially evaporates the aluminum layer 3, the titanium layer, the platinum layer and the gold layer, and 4 in FIG. 2 represents the titanium layer, the platinum layer and the gold layer; the evaporation conditions are: the coating rate is , the coating power is 0.35 times the output power of the electron gun, and the cavity pressure is 1.0×10 ^-6 Torr.

Step 310: Peel off the adhesive to obtain the LED chip electrodes. Use the blue film to peel off the metal, and after the metal is peeled off, put the chip into the glue remover for ultrasonic soaking, wherein the glue remover includes N-methylpyrrolidone with a mass fraction of 99.6% and a mass fraction of 0.35% of water.

The LED chip electrode made according to the above method, as shown in Figure 2, the LED chip electrode includes: chromium layer 2, aluminum layer 3 and titanium layer, platinum layer and gold layer from bottom to top, as shown in Figure 3 , the surface of the chromium layer 2 is etched with nanoscale concave rectangular pits, the length, width and height of the concave rectangular pits are 5nm, and the distance between adjacent concave rectangular pits is 3.2nm.

Comparative Experiment:

1) The N and P mesas are etched by conventional methods; the dry etching equipment ICP etches the epitaxial layer 1 including the N-type GaN layer, the quantum well and the P-type GaN layer from bottom to top to form steps and expose the N-type GaN layer, The etching depth is 1-2 μm, and the width of the cutting line is between 10-25 μm.

2) The conventional method makes the transparent conductive layer; the electron beam vacuum evaporation method makes the indium tin oxide thin film conductive layer; the film thickness , the cavity temperature is 150-350°C, the oxygen flow rate is 5-15 sccm, and the vacuum degree is 10 ^-5 -10 ^-7 Torr.

3) Do photolithography by conventional methods to expose the electrode area; apply 2.5-3.0 micron negative photoresist, expose and develop, and expose the electrode area

4) The electron beam vacuum evaporation method sequentially evaporates a chromium layer, an aluminum layer and other metal layers. The chamber pressure during evaporation is 1.0×10 ^-6 Torr, the deposition rate is 4.5-10 angstroms/second when evaporating chromium layer, aluminum layer, titanium layer, platinum layer and gold layer, and the coating power is 0.30-0.45 of the output power of the electron gun times,

5) Peel off the glue. Use the blue film to peel off the metal, and after the metal is peeled off, put the chip into the glue remover for ultrasonic soaking, wherein the glue remover includes N-methylpyrrolidone with a mass fraction of 99.5-99.8% and a mass fraction of 0.2-0.5% water. The LED and its electrodes shown in Figure 1 are obtained.

Compared with the prior art, the LED chip electrode and its manufacturing method described in the present invention have achieved the following effects:

The present invention makes the surface of the chromium layer under the aluminum layer form nanoscale concavo-convex shapes. Compared with the flat surface, the light can go out in the form of diffuse reflection and scattering on the concavo-convex surface, increasing the light on the surface of the chromium layer. The output rate of the LED increases, and then increases the amount of light reaching the aluminum layer. In this way, the light reflected back into the chip by the aluminum layer and reflected again will also increase, and the luminous efficiency of the LED is significantly improved. The electrode structure of the present invention is 5 times brighter than the traditional method. %-6%.

The above description shows and describes several preferred embodiments of the present invention, but as mentioned above, it should be understood that the present invention is not limited to the forms disclosed herein, and should not be regarded as excluding other embodiments, but can be used in various Various other combinations, modifications, and environments can be made within the scope of the inventive concept described herein, by the above teachings or by skill or knowledge in the relevant field. However, changes and changes made by those skilled in the art do not depart from the spirit and scope of the present invention, and should all be within the protection scope of the appended claims of the present invention.

Claims (5)

1. a kind of preparation method of LED core plate electrode, it is characterised in that including step：

The epitaxial layer for including N-type GaN layer, SQW and p-type GaN layer successively from bottom to top is etched using dry etching equipment ICP, Step is formed, exposes N-type GaN layer, 1-2 μm of etching depth, the width of Cutting Road is between 10-25 μm；

Indium tin oxide films conductive layer is made using electron beam vacuum deposition method, film thickness isCavity temperature 150-350 DEG C of degree, oxygen flow 5-15sccm, vacuum 3 × 10^-5-3×10^-7Torr；The negativity of 2.5-3.0 μm of coating thickness Photoresist, exposure, development, exposes electrode district；

10-12nm layers of chrome is deposited using electron beam vacuum deposition method, plated film speed isPlated film power is electricity 0.35-0.45 times of sub- rifle power output, chamber pressure is 1.0 × 10^-6Torr；

5-10nm nickel dam is deposited using electron beam vacuum deposition method, plated film speed is set toPlated film power is 0.16-0.19 times of electron gun power output, chamber pressure is 1.0 × 10^-6Torr；

The nickel dam is made annealing treatment in nitrogen atmosphere, nickel dam is formed equally distributed ball on the surface of the layers of chrome Shape nickel particle, the distance between spherical nickel particle is 2.5-4nm, and nitrogen flow is 5-7L/min, and temperature is 500-540 DEG C, when Between be 60-120s；

By the use of spherical nickel particle as mask, the layers of chrome is etched, is cheated in layers of chrome surface etch formation nanoscale concavity rectangle, it is recessed The length in shape rectangle hole is 3-8nm, and reactive ion etching is used at a distance of 2.5-4nm, etching between adjacent concavity rectangle hole The dry etching that machine or sense coupling machine are carried out, used etching gas are BCl₃、Cl₂Or Ar, BCl₃It is logical The concentration entered is 15-22ml/min, Cl₂The concentration being passed through is 20-30ml/min, and the concentration that Ar is passed through is 24-33ml/min；

Spherical nickel particle is removed using the solution corrosion comprising iron chloride, hydrochloric acid and water；

Aluminium lamination, titanium layer, platinum layer and layer gold are deposited using electron beam vacuum deposition method successively；

Stripping is removed photoresist, and obtains LED core plate electrode.

2. the preparation method of LED core plate electrode according to claim 1, it is characterised in that the step uses and includes chlorine Change iron, the solution corrosion of hydrochloric acid and water removes spherical nickel particle, further to use mass fraction for 8-15% chlorination Iron, mass fraction 10-18% hydrochloric acid, remaining remove spherical nickel particle for the solution corrosion of water, 50-65 DEG C of solution temperature, instead 5-10min between seasonable.

3. the preparation method of LED core plate electrode according to claim 1, it is characterised in that the step uses electron beam Aluminium lamination, titanium layer, platinum layer and layer gold is deposited in vacuum deposition method successively, further for evaporation condition is：Plated film speed isPower is 0.30-0.45 times of its power output, and chamber pressure is 1.0 × 10^-6Torr。

4. the preparation method of LED core plate electrode according to claim 1, it is characterised in that the step is peeled off and removed photoresist, and is entered One step is that metal is peeled off using blue film, and chip is put into glue-dispenser again after metal-stripping is clean and carries out ultrasonic leaching Bubble, wherein it is 0.2- that the glue-dispenser, which includes the 1-METHYLPYRROLIDONE and mass fraction that mass fraction is 99.5-99.8%, 0.5% water.

5. the LED core plate electrode made according to the preparation method of any described LED core plate electrode in Claims 1-4, it is special Levy and be, the LED core plate electrode sequentially includes from bottom to top：Layers of chrome, aluminium lamination and evaporation aluminium lamination, titanium layer, platinum layer and layer gold, its In, there is nanoscale concavity rectangle hole in the layers of chrome surface etch, the length in concavity rectangle hole is 3-8nm, adjacent concavity At a distance of 2.5-4nm between rectangle hole.