TW200612515A - Method of manufacturing a semiconductor device and such a semiconductor device - Google Patents
Method of manufacturing a semiconductor device and such a semiconductor deviceInfo
- Publication number
- TW200612515A TW200612515A TW094129685A TW94129685A TW200612515A TW 200612515 A TW200612515 A TW 200612515A TW 094129685 A TW094129685 A TW 094129685A TW 94129685 A TW94129685 A TW 94129685A TW 200612515 A TW200612515 A TW 200612515A
- Authority
- TW
- Taiwan
- Prior art keywords
- sub
- layer
- semiconductor
- region
- semiconductor device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04104204 | 2004-09-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200612515A true TW200612515A (en) | 2006-04-16 |
Family
ID=35385163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094129685A TW200612515A (en) | 2004-09-02 | 2005-08-30 | Method of manufacturing a semiconductor device and such a semiconductor device |
Country Status (7)
Country | Link |
---|---|
US (1) | US7772646B2 (zh) |
EP (1) | EP1790004B1 (zh) |
JP (1) | JP2008511977A (zh) |
KR (1) | KR20070050988A (zh) |
CN (1) | CN101019223A (zh) |
TW (1) | TW200612515A (zh) |
WO (1) | WO2006024978A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2600400A4 (en) * | 2010-07-30 | 2015-03-18 | Kyocera Corp | COMPOSITE SUBSTRATE, ELECTRONIC COMPONENT, METHOD FOR PRODUCING THE COMPOSITE COMPOSITE AND METHOD FOR PRODUCING THE ELECTRONIC COMPONENT |
EP2757580A1 (en) * | 2013-01-22 | 2014-07-23 | Nxp B.V. | Bipolar cmos dmos (bcd) processes |
US9570437B2 (en) | 2014-01-09 | 2017-02-14 | Nxp B.V. | Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same |
TWI588918B (zh) * | 2014-04-01 | 2017-06-21 | 亞太優勢微系統股份有限公司 | 具精確間隙機電晶圓結構與及其製作方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5238865A (en) * | 1990-09-21 | 1993-08-24 | Nippon Steel Corporation | Process for producing laminated semiconductor substrate |
US5895252A (en) * | 1994-05-06 | 1999-04-20 | United Microelectronics Corporation | Field oxidation by implanted oxygen (FIMOX) |
DE69513469T2 (de) * | 1994-06-16 | 2000-07-06 | Nec Corp., Tokio/Tokyo | Silizium-auf-Isolator-Substrat und dessen Herstellungsverfahren |
US6664146B1 (en) * | 2001-06-01 | 2003-12-16 | Advanced Micro Devices, Inc. | Integration of fully depleted and partially depleted field effect transistors formed in SOI technology |
FR2847077B1 (fr) * | 2002-11-12 | 2006-02-17 | Soitec Silicon On Insulator | Composants semi-conducteurs, et notamment de type soi mixtes, et procede de realisation |
US7510927B2 (en) * | 2002-12-26 | 2009-03-31 | Intel Corporation | LOCOS isolation for fully-depleted SOI devices |
-
2005
- 2005-08-10 KR KR1020077007537A patent/KR20070050988A/ko not_active Withdrawn
- 2005-08-10 WO PCT/IB2005/052653 patent/WO2006024978A1/en active Application Filing
- 2005-08-10 EP EP05774101A patent/EP1790004B1/en not_active Not-in-force
- 2005-08-10 US US11/574,338 patent/US7772646B2/en not_active Expired - Fee Related
- 2005-08-10 CN CNA2005800290732A patent/CN101019223A/zh active Pending
- 2005-08-10 JP JP2007529061A patent/JP2008511977A/ja not_active Withdrawn
- 2005-08-30 TW TW094129685A patent/TW200612515A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN101019223A (zh) | 2007-08-15 |
EP1790004A1 (en) | 2007-05-30 |
KR20070050988A (ko) | 2007-05-16 |
EP1790004B1 (en) | 2013-01-30 |
WO2006024978A1 (en) | 2006-03-09 |
US20090166799A1 (en) | 2009-07-02 |
JP2008511977A (ja) | 2008-04-17 |
US7772646B2 (en) | 2010-08-10 |
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