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TW200612515A - Method of manufacturing a semiconductor device and such a semiconductor device - Google Patents

Method of manufacturing a semiconductor device and such a semiconductor device

Info

Publication number
TW200612515A
TW200612515A TW094129685A TW94129685A TW200612515A TW 200612515 A TW200612515 A TW 200612515A TW 094129685 A TW094129685 A TW 094129685A TW 94129685 A TW94129685 A TW 94129685A TW 200612515 A TW200612515 A TW 200612515A
Authority
TW
Taiwan
Prior art keywords
sub
layer
semiconductor
region
semiconductor device
Prior art date
Application number
TW094129685A
Other languages
English (en)
Inventor
Josine Johanna Gerarda Petra Loo
Vincent Charles Venezia
Youri Ponomarev
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200612515A publication Critical patent/TW200612515A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76243Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/981Utilizing varying dielectric thickness

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
TW094129685A 2004-09-02 2005-08-30 Method of manufacturing a semiconductor device and such a semiconductor device TW200612515A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04104204 2004-09-02

Publications (1)

Publication Number Publication Date
TW200612515A true TW200612515A (en) 2006-04-16

Family

ID=35385163

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094129685A TW200612515A (en) 2004-09-02 2005-08-30 Method of manufacturing a semiconductor device and such a semiconductor device

Country Status (7)

Country Link
US (1) US7772646B2 (zh)
EP (1) EP1790004B1 (zh)
JP (1) JP2008511977A (zh)
KR (1) KR20070050988A (zh)
CN (1) CN101019223A (zh)
TW (1) TW200612515A (zh)
WO (1) WO2006024978A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2600400A4 (en) * 2010-07-30 2015-03-18 Kyocera Corp COMPOSITE SUBSTRATE, ELECTRONIC COMPONENT, METHOD FOR PRODUCING THE COMPOSITE COMPOSITE AND METHOD FOR PRODUCING THE ELECTRONIC COMPONENT
EP2757580A1 (en) * 2013-01-22 2014-07-23 Nxp B.V. Bipolar cmos dmos (bcd) processes
US9570437B2 (en) 2014-01-09 2017-02-14 Nxp B.V. Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same
TWI588918B (zh) * 2014-04-01 2017-06-21 亞太優勢微系統股份有限公司 具精確間隙機電晶圓結構與及其製作方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5238865A (en) * 1990-09-21 1993-08-24 Nippon Steel Corporation Process for producing laminated semiconductor substrate
US5895252A (en) * 1994-05-06 1999-04-20 United Microelectronics Corporation Field oxidation by implanted oxygen (FIMOX)
DE69513469T2 (de) * 1994-06-16 2000-07-06 Nec Corp., Tokio/Tokyo Silizium-auf-Isolator-Substrat und dessen Herstellungsverfahren
US6664146B1 (en) * 2001-06-01 2003-12-16 Advanced Micro Devices, Inc. Integration of fully depleted and partially depleted field effect transistors formed in SOI technology
FR2847077B1 (fr) * 2002-11-12 2006-02-17 Soitec Silicon On Insulator Composants semi-conducteurs, et notamment de type soi mixtes, et procede de realisation
US7510927B2 (en) * 2002-12-26 2009-03-31 Intel Corporation LOCOS isolation for fully-depleted SOI devices

Also Published As

Publication number Publication date
CN101019223A (zh) 2007-08-15
EP1790004A1 (en) 2007-05-30
KR20070050988A (ko) 2007-05-16
EP1790004B1 (en) 2013-01-30
WO2006024978A1 (en) 2006-03-09
US20090166799A1 (en) 2009-07-02
JP2008511977A (ja) 2008-04-17
US7772646B2 (en) 2010-08-10

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