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TW200605349A - Nitride-based transistors having laterally grown active region and methods of fabricating same - Google Patents

Nitride-based transistors having laterally grown active region and methods of fabricating same

Info

Publication number
TW200605349A
TW200605349A TW094112474A TW94112474A TW200605349A TW 200605349 A TW200605349 A TW 200605349A TW 094112474 A TW094112474 A TW 094112474A TW 94112474 A TW94112474 A TW 94112474A TW 200605349 A TW200605349 A TW 200605349A
Authority
TW
Taiwan
Prior art keywords
nitride
group iii
layer
methods
laterally grown
Prior art date
Application number
TW094112474A
Other languages
English (en)
Inventor
Scott Sheppard
Richard Peter Smith
Adam William Saxler
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of TW200605349A publication Critical patent/TW200605349A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
TW094112474A 2004-07-26 2005-04-19 Nitride-based transistors having laterally grown active region and methods of fabricating same TW200605349A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/899,215 US20060017064A1 (en) 2004-07-26 2004-07-26 Nitride-based transistors having laterally grown active region and methods of fabricating same

Publications (1)

Publication Number Publication Date
TW200605349A true TW200605349A (en) 2006-02-01

Family

ID=34964204

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094112474A TW200605349A (en) 2004-07-26 2005-04-19 Nitride-based transistors having laterally grown active region and methods of fabricating same

Country Status (6)

Country Link
US (2) US20060017064A1 (zh)
EP (1) EP1779437B1 (zh)
JP (1) JP2008507853A (zh)
AT (1) ATE531081T1 (zh)
TW (1) TW200605349A (zh)
WO (1) WO2006022872A1 (zh)

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Also Published As

Publication number Publication date
US8946777B2 (en) 2015-02-03
WO2006022872A1 (en) 2006-03-02
US20100012952A1 (en) 2010-01-21
US20060017064A1 (en) 2006-01-26
ATE531081T1 (de) 2011-11-15
EP1779437A1 (en) 2007-05-02
JP2008507853A (ja) 2008-03-13
EP1779437B1 (en) 2011-10-26

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